Infineon IGC168T170S8RM Low switching loss Datasheet

IGC168T170S8RM
IGBT3 Power Chip
Features:
 1700V Trench + Field stop technology
 low switching losses
 soft turn off
 positive temperature coefficient
 easy paralleling
Chip Type
VCE
IC
IGC168T170S8RM 1700V 150A
This chip is used for:
 power modules
C
Applications:
 drives
G
Die Size
Package
13.38 x 12.58 mm2
sawn on foil
E
Mechanical Parameters
Raster size
Emitter pad size (incl. gate pad)
13.38 x 12.58
11.159 x 10.353
mm
Gate pad size
2
1.674 x 0.899
Area total
168.3
Thickness
190
µm
Wafer size
200
mm
Max.possible chips per wafer
Passivation frontside
Pad metal
Backside metal
150
Photoimide
3200 nm AlSiCu
Ni Ag –system
suitable for epoxy and soft solder die bonding
Die bond
Electrically conductive glue or solder
Wire bond
Al, <500µm
Reject ink dot size
Recommended storage environment
 0.65mm ; max 1.2mm
Store in original container, in dry nitrogen, in dark
environment, < 6 month at an ambient temperature of 23°C
Edited by INFINEON Technologies, IFAG IPC TD VLS, L7793O, L7793T, L7793E, Edition 0.9, 27.06.2014
IGC168T170S8RM
Maximum Ratings
Parameter
Symbol
Value
Unit
1700
V
1)
A
Collector-Emitter voltage, Tvj =25 C
VCE
DC collector current, limited by Tvj max
IC
Pulsed collector current, tp limited by Tvj max
Ic, puls
450
A
Gate emitter voltage
VGE
20
V
Junction temperature range
Tvj
-40 ... +175
°C
Operating junction temperature
Tvj
-40...+150
C
tSC
10
µs
Short circuit data
2)
VGE = 15V, VCC = 1000V, Tvj = 150°C
I C , m a x = 300A, V C E , m a x = 1700V
Reverse bias safe operating area 2 ) (RBSOA)
Tvj  150 °C
1)
depending on thermal properties of assembly
2)
not subject to production test - verified by design/characterization
Static Characteristic (tested on wafer), Tvj =25 C
Value
Parameter
Symbol
Conditions
Unit
min.
Collector-Emitter breakdown voltage
V(BR)CES
Collector-Emitter saturation voltage
typ.
max.
VGE=0V , IC= 2 mA
1700
VCEsat
VGE=15V, IC=150A
1.6
1.9
2.2
Gate-Emitter threshold voltage
VGE(th)
IC=6mA , VGE=VCE
5.2
5.8
6.4
Zero gate voltage collector current
ICES
VCE=1700V , VGE=0V
8
µA
Gate-Emitter leakage current
IGES
VCE=0V , VGE=20V
300
nA
Integrated gate resistor
rG
3)
3)
V

5
Vcesat tested at lower current
Dynamic Characteristic (not subject to production test - verified by design / characterization), Tvj =25 C
Parameter
Input capacitance
Symbol
Cies
Conditions
V C E = 25 V ,
Value
min.
typ.
Cres
f= 1 MH z
Unit
13500
V G E = 0V ,
Reverse transfer capacitance
max.
pF
430
Edited by INFINEON Technologies, IFAG IPC TD VLS, L7793O, L7793T, L7793E, Edition 0.9, 27.06.2014
IGC168T170S8RM
Further Electrical Characteristic
Switching characteristics and thermal properties are depending strongly on module design and mounting
technology and can therefore not be specified for a bare die.
Edited by INFINEON Technologies, IFAG IPC TD VLS, L7793O, L7793T, L7793E, Edition 0.9, 27.06.2014
IGC168T170S8RM
Chip Drawing
G
E
E
E
E
E
T
E
E
E
E
E = Emitter
G = Gate
T = Test pad do not contact
Edited by INFINEON Technologies, IFAG IPC TD VLS, L7793O, L7793T, L7793E, Edition 0.9, 27.06.2014
IGC168T170S8RM
Description
AQL 0,65 for visual inspection according to failure catalogue
Electrostatic Discharge Sensitive Device according to MIL-STD 883
Revision History
Version
Subjects (major changes since last revision)
Date
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2014 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or
any information regarding the application of the device, Infineon Technologies hereby disclaims any and all
warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual
property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the
types in question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or
systems and/or automotive, aviation and aerospace applications or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the
failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted in the
human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable
to assume that the health of the user or other persons may be endangered.
Edited by INFINEON Technologies, IFAG IPC TD VLS, L7793O, L7793T, L7793E, Edition 0.9, 27.06.2014
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