JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L-C Plastic-Encapsulate MOSFETS CJP50N06 N-Channel Power MOSFET V(BR)DSS RDS(on)MAX ID 60V 20mΩ@10V 50A TO-220-3L-C GENERAL DESCRIPTION The CJP50N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FEATURE z High density cell design for ultra low Rdson z Fully characterized avalanche voltage and current z Good stability and uniformity with high EAS z Excellent package for good heat dissipation z Special process technology for high ESD capability 1. GATE 2. DRAIN 3. SOURCE 1 2 3 APPLICATION z Power switching application z Hard switched and high frequency circuits z Uninterruptible power supply MARKING CJP50N06 XXX G D EQUIVALENT CIRCUIT CJP50N06= Device code Solid dot = Green molding compound device, if none, the normal device XXX=Date Code S Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ±20 Continuous Drain Current ID 50 Pulsed Drain Current IDM 220 Single Pulsed Avalanche Energy* EAS 115 mJ Power Dissipation PD 2 W RθJA 62.5 ℃/W Junction Temperature TJ 150 Storage Temperature Tstg -50 ~+150 Thermal Resistance from Junction to Ambient V A ℃ *EAS condition: Tj=25℃,VDD=50V,L=0.5mH, RG=25Ω, Starting TJ = 25°C www.cj-elec.com 1 A-3,Apr,2016 MOSFET ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Typ Max Unit Off characteristics Drain-source breakdown voltage V(BR) DSS VGS = 0V, ID =250µA Zero gate voltage drain current IDSS VDS =60V, VGS =0V 1 µA Gate-body leakage current IGSS VDS =0V, VGS =±20V ±100 nA Gate-threshold voltage VGS(th) VDS =VGS, ID =250µA 1.8 2.5 V Static drain-source on-resistance RDS(on) VGS =10V, ID =20A 17 20 mΩ gFS VDS =25V, ID =20A 60 V On characteristics (note1) Forward transconductance 1.5 24 S Dynamic characteristics (note 2) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss VDS =25V,VGS =0V, f =1MHz 900 pF 104 33 Switching characteristics (note 2) Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Turn-on delay time td(on) Turn-on rise time Turn-off delay time Turn-off fall time tr td(off) tf VDS=30V, VGS=10V, ID=50A VDD=30V,ID=2A, VGS=10V,RG=2.5Ω, RL=15Ω 30 nC 10 5 25 5 ns 50 6 Drain-Source Diode Characteristics Drain-source diode forward voltage(note1) Continuous drain-source diode forward current Pulsed drain-source diode forward current VSD VGS =0V, IS=40A 1.2 V IS 50 A ISM 220 A Notes: 1. Pulse Test : Pulse Width≤300µs, duty cycle ≤2%. 2. Guaranteed by design, not subject to production. www.cj-elec.com 2 A-3,Apr,2016 7\SLFDO&KDUDFWHULVWLFV Output Characteristics 1000 Transfer Characteristics 1000 VDS=25.0V Ta=25℃ (A) VGS= 7V ID VGS= 6V VGS= 5.5V DRAIN CURRENT (A) VGS= 8V 100 ID DRAIN CURRENT Pulsed Pulsed VGS= 15,10V VGS= 5V 10 VGS= 4.5V 100 Ta=25℃ 10 1 0.1 0.1 1 10 DRAIN TO SOURCE VOLTAGE RDS(ON) —— 1 100 VDS (m) VGS=4.5V RDS(ON) 24 ON-RESISTANCE (m) 9 VGS 10 (V) 20 18 16 VGS=10V 14 48 44 40 36 32 28 20 16 10 12 10 30 20 40 DRAIN CURRENT 50 ID 60 70 8 80 Ta=100℃ 24 12 0 Pulsed ID=20A 52 28 RDS(ON) 8 56 Pulsed 30 ON-RESISTANCE 7 RDS(ON)—— VGS ID Ta=25℃ 32 8 6 60 34 22 5 GATE TO SOURCE VOLTAGE 36 26 4 (V) Ta=25℃ 3 (A) 4 5 7 8 VGS 9 10 (V) Threshold Voltage IS —— VSD 100 6 GATE TO SOURCE VOLTAGE 2.50 Pulsed 2.25 2.00 VTH Ta=100℃ Ta=25℃ 1 THRESHOLD VOLTAGE SOURCE CURRENT IS (A) (V) 10 0.1 0.01 1.75 1.50 ID=250uA 1.25 1.00 0.75 1E-3 0 200 400 600 800 1000 SOURCE TO DRAIN VOLTAGE www.cj-elec.com 1200 1400 1600 VSD (mV) 0.50 25 50 75 JUNCTION TEMPERATURE 3 100 TJ 125 (℃ ) A-3,Apr,2016 TO-220-3L-C Package Outline Dimensions Symbol A A1 b b1 c c1 D E E1 e e1 F H h L L1 V Φ www.cj-elec.com Dimensions In Millimeters Min. Max. 4.400 4.600 2.250 2.550 0.710 0.910 1.170 1.370 0.330 0.650 1.200 1.400 9.910 10.250 8.950 9.750 12.650 12.950 2.540 TYP. 4.980 5.180 2.650 2.950 7.900 8.100 0.000 0.300 12.900 13.400 2.850 3.250 7.500 REF. 3.400 3.800 4 Dimensions In Inches Min. Max. 0.173 0.181 0.089 0.100 0.028 0.036 0.046 0.054 0.013 0.026 0.047 0.055 0.390 0.404 0.352 0.384 0.498 0.510 0.100 TYP. 0.196 0.204 0.104 0.116 0.311 0.319 0.000 0.012 0.508 0.528 0.112 0.128 0.295 REF. 0.134 0.150 A-3,Apr,2016