Spec. No. : C080I3 Issued Date : 2016.07.19 Revised Date : Page No. : 1/10 CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTN4N65CI3 BVDSS ID @VGS=10V, TC=25°C ID @VGS=10V, TC=100°C RDS(ON)@VGS=10V, ID=2A 650V 4A 2.4A 1.8Ω(typ) Features • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • Pb-free Lead Plating and Halogen-free Package Applications • Open Framed Power Supply • Adapter • STB Symbol Outline MTN4N65CI3 G：Gate D：Drain TO-251 S：Source G D S Ordering Information Device MTN4N65CI3-0-UA-G Package TO-251 (RoHS compliant and halogen-free package) Shipping 80 pcs/tube, 50 tubes/box Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UA : 80 pcs / tube, 50 tubes/box Product rank, zero for no rank products Product name MTN4N65CI3 CYStek Product Specification Spec. No. : C080I3 Issued Date : 2016.07.19 Revised Date : Page No. : 2/10 CYStech Electronics Corp. Absolute Maximum Ratings (TC=25°C) Parameter Symbol Limits Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ VGS=10V, TC=25°C Continuous Drain Current @ VGS=10V, TC=100°C Pulsed Drain Current @ VGS=10V (Note 1) Avalanche Current (Note 1) Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Maximum Temperature for Soldering @ Lead at 0.125 in(0.318mm) from case for 10 seconds Total Power Dissipation (TC=25℃) Linear Derating Factor Operating Junction and Storage Temperature VDS VGS IDM IAS EAS EAR 650 ±30 4* 2.4* 16* 2 16 4.8 TL 300 °C PD 48 0.38 -55~+150 W W/°C °C ID Tj, Tstg *Drain current limited by maximum junction temperature *100% UIS testing in condition of VDD=50V, L=8mH, VG=10V, IL=2A, Rated VDS=650V Unit V A mJ Note : 1.Repetitive rating; pulse width limited by maximum junction temperature. 2. IAS=2A, VDD=50V, L=8mH, VG=10V, starting TJ=+25℃. Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Thermal Resistance, Junction-to-ambient, max Symbol RθJC (Note 1) (Note 2) RθJA Value 2.6 50 110 Unit °C/W 1. When the device is mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment with TA=25°C. 2. When the device is mounted on the minimum pad size recommended (PCB mount) with TA=25°C. MTN4N65CI3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C080I3 Issued Date : 2016.07.19 Revised Date : Page No. : 3/10 Characteristics (TC=25°C, unless otherwise specified) Symbol Static BVDSS ∆BVDSS/∆Tj VGS(th) *GFS IGSS IDSS Min. Typ. Max. Unit Test Conditions 650 2.0 - 0.6 5 1.8 4.0 ±100 1 10 2.6 V V/°C V S nA Ω VGS=0V, ID=250μA, Tj=25℃ Reference to 25°C, ID=250μA VDS = VGS, ID=250μA VDS =15V, ID=2A VGS=±30V VDS =650V, VGS =0V VDS =520V, VGS =0V, Tj=125°C VGS =10V, ID=2A 16 3.1 5.5 11 8.6 35.4 31.6 621 61 39 - nC ID=4A, VDD=520V, VGS=10V ns VDD=325V, ID=4A, VGS=10V, RG=25Ω pF VGS=0V, VDS=25V, f=1MHz 343 1.59 4 16 1.5 - *RDS(ON) Dynamic *Qg *Qgs *Qgd *td(ON) *tr *td(OFF) *tf Ciss Coss Crss Source-Drain Diode *IS *ISM *VSD *trr *Qrr - μA A V ns μC IS=2A, VGS=0V VGS=0V, IF=4A, dIF/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% MTN4N65CI3 CYStek Product Specification Spec. No. : C080I3 Issued Date : 2016.07.19 Revised Date : Page No. : 4/10 CYStech Electronics Corp. Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.2 BVDSS, Normalized Drain-Source Breakdown Voltage 10 10V,9V,8V,7V,6V ID, Drain Current(A) 8 6 VGS=5V 4 VGS=4.5V 2 1.1 1 0.9 0.8 ID=250μA, VGS=0V 0.7 VGS=4V 0.6 0 0 5 10 15 20 25 30 35 40 VDS, Drain-Source Voltage(V) 45 -75 50 0 25 50 75 100 125 150 175 TA, Ambient Temperature(°C) 10 5 TC=25°C VGS=10V 8 4 ID, Drain Current(A) RDS(on), Static Drain-Source On-State Resistance(Ω) -25 Drain Current vs Gate-Source Voltage Static Drain-Source On-State resistance vs Drain Current 3 2 VDS=30V 6 4 VDS=10V 2 1 0 0 0.001 0.01 0.1 ID, Drain Current(A) 1 0 10 Ta=25°C 10 8 IF, Forward Current(A) VGS=0V 6 5 4 3 2 4 6 VGS , Gate-Source Voltage(V) 10 8 7 2 Forward Drain Current vs Source-Drain Voltage Static Drain-Source On-State Resistance vs Gate-Source Voltage RDS(on), Static Drain-Source On-State Resistance(Ω) -50 ID=2A 1 Tj=150°C Tj=25°C 0.1 0.01 1 0.001 0 0 MTN4N65CI3 2 4 6 VGS , Gate-Source Voltage(V) 8 10 0 0.2 0.4 0.6 0.8 1 1.2 VSD, Source Drain Voltage(V) CYStek Product Specification Spec. No. : C080I3 Issued Date : 2016.07.19 Revised Date : Page No. : 5/10 CYStech Electronics Corp. Typical Characteristics(Cont.) Capacitance vs Reverse Voltage Static Drain-Source On-resistance vs Ambient Temperature 1000 RDS(on) , Normalized Static Drain-Source On-state Resistance 2.8 Capacitance-(pF) Ciss Coss 100 f=1MHz Crss 10 ID=2A, VGS=10V 2.4 2.0 1.6 1.2 0.8 0.4 RDSON@Tj=25°C : 2Ω typ. 0.0 0 5 10 15 20 25 VDS , Drain-to-Source Voltage(V) 30 -75 -50 -25 0 25 50 75 100 125 150 175 TA, Ambient Temperature(°C) Gate Charge Characteristics Maximum Safe Operating Area 10 100 RDS(ON) Limited 10 VGS, Gate-Source Voltage(V) ID, Drain Current(A) VDS=130V 10μs 100μs 1ms 1 10ms 100ms 0.1 DC TC=25°C, Tj=150°C, VGS=10V, RθJC=2.6°C/W, single pulse 8 VDS=325V 6 2 ID=4A 0 0.01 1 10 100 VDS, Drain-Source Voltage(V) 0 1000 4 8 12 16 20 Qg, Total Gate Charge(nC) Maximum Drain Current vs Case Temperature Threshold Voltage vs Junction Tempearture 5.0 VGS(th), Normalized Threshold Voltage 1.4 4.5 ID, Maximum Drain Current(A) VDS=520V 4 4.0 3.5 3.0 2.5 2.0 1.5 1.0 VGS=10V, RθJC=2.6°C/W 0.5 0.0 1.2 ID=1mA 1 0.8 0.6 ID=250μA 0.4 0.2 25 50 75 100 125 TC, Case Temperature(°C) MTN4N65CI3 150 175 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) CYStek Product Specification Spec. No. : C080I3 Issued Date : 2016.07.19 Revised Date : Page No. : 6/10 CYStech Electronics Corp. Typical Characteristics(Cont.) Forward Transfer Admittance vs Drain Current Single Pulse Power Rating, Junction to Case 3500 GFS , Forward Transfer Admittance(S) 10 3000 TJ(MAX) =150°C TC=25°C RθJC=2.6°C/W Power (W) 2500 2000 1500 1000 500 0 0.00001 0.0001 0.001 0.01 0.1 1 10 1 0.1 VDS=15V Ta=25°C Pulsed 0.01 0.001 Pulse Width(s) 0.01 0.1 1 ID, Drain Current(A) 10 Transient Thermal Response Curves 1 r(t), Normalized Effective Transient Thermal Resistance D=0.5 0.2 0.1 1.RθJC(t)=r(t)*RθJC 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*RθJC(t) 4.RθJC=2.6°C/W 0.1 0.05 0.02 0.01 0.01 Single Pulse 0.001 1.E-05 MTN4N65CI3 1.E-04 1.E-03 1.E-02 1.E-01 t1, Square Wave Pulse Duration(s) 1.E+00 1.E+01 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C080I3 Issued Date : 2016.07.19 Revised Date : Page No. : 7/10 Test Circuits and Waveforms MTN4N65CI3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C080I3 Issued Date : 2016.07.19 Revised Date : Page No. : 8/10 Test Circuits and Waveforms(Cont.) MTN4N65CI3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C080I3 Issued Date : 2016.07.19 Revised Date : Page No. : 9/10 Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Pb-free Assembly Profile feature Sn-Pb eutectic Assembly Average ramp-up rate 3°C/second max. 3°C/second max. (Tsmax to Tp) Preheat 100°C 150°C −Temperature Min(TS min) −Temperature Max(TS max) 150°C 200°C −Time(ts min to ts max) 60-120 seconds 60-180 seconds Time maintained above: −Temperature (TL) 183°C 217°C − Time (tL) 60-150 seconds 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak 10-30 seconds 20-40 seconds temperature(tp) Ramp down rate 6°C/second max. 6°C/second max. 6 minutes max. 8 minutes max. Time 25 °C to peak temperature Note : All temperatures refer to topside of the package, measured on the package body surface. MTN4N65CI3 CYStek Product Specification Spec. No. : C080I3 Issued Date : 2016.07.19 Revised Date : Page No. : 10/10 CYStech Electronics Corp. TO-251 Dimension Marking: 4 Product Name CYS 4N65C □□□□ Date Code 1 2 3 Style: Pin 1.Gate 2.Drain 3.Source 4 Drain 3-Lead TO-251 Plastic Package CYStek Package Code: I3 Inches Min. Max. 0.2500 0.2618 0.2047 0.2126 0.5709 0.5866 0.0276 0.0354 0.0199 0.0276 0.0886 0.0925 0.0886 0.0925 0.0169 0.0228 DIM A B C D E F G H Millimeters Min. Max. 6.35 6.65 5.20 5.40 14.50 14.90 0.70 0.90 0.50 0.70 2.25 2.35 2.25 2.35 0.43 0.58 DIM I J K L M N S T Inches Min. Max. 0.0866 0.0945 0.2126 0.2244 0.2992 0.3071 0.0453 0.0492 0.0169 0.0228 0.1181 REF 0.1969 REF 0.1496 REF Millimeters Min. Max. 2.20 2.40 5.40 5.70 7.60 7.80 1.15 1.25 0.43 0.58 3.00 REF 5.00 REF 3.80 REF Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTN4N65CI3 CYStek Product Specification