Zowie MMBT5550GH High voltage transistors lead free product halogen-free type Datasheet

Zowie Technology Corporation
High Voltage Transistors
Lead free product
Halogen-free type
FEATURE
ƽ
We declare that the material of product
compliance with RoHS requirements.
3
COLLECTOR
3
MMBT5550GH
MMBT5551GH
1
1
BASE
2
2
SOT-23
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
V CEO
140
Vdc
Collector–Base Voltage
V CBO
160
Vdc
Emitter–Base Voltage
V
6.0
Vdc
600
mAdc
Collector Current — Continuous
EBO
IC
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
Max
Unit
PD
225
mW
RθJA
1.8
556
mW/°C
°C/W
PD
300
mW
RθJA
TJ , Tstg
2.4
417
–55 to +150
mW/°C
°C/W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
140
160
—
—
Vdc
MMBT5550GH
160
—
Vdc
MMBT5551GH
180
—
6.0
—
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(3)
(I C = 1.0 mAdc, I B = 0)
V (BR)CEO
MMBT5550GH
MMBT5551GH
V (BR)CBO
Collector–Base Breakdown Voltage
(I C = 100 µAdc, I E = 0)
Emitter–Base Breakdown Voltage
V
(I E = 10 µAdc, I C = 0)
Collector Cutoff Current
( V CB = 100Vdc, I E = 0)
( V CB = 120Vdc, I E = 0)
( V CB = 100Vdc, I E = 0, T A=100 °C)
( V CB = 120Vdc, I E = 0, T A=100 °C)
I CBO
Vdc
—
100
nAdc
MMBT5550GH
—
—
50
100
µAdc
MMBT5551GH
—
50
—
50
MMBT5550GH
MMBT5551GH
Emitter Cutoff Current
( V BE = 4.0Vdc, I C= 0)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2.0%.
REV. 0
(BR)EBO
I EBO
nAdc
Zowie Technology Corporation
Zowie Technology Corporation
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
60
80
60
80
20
30
—
—
250
250
—
—
Unit
ON CHARACTERISTICS
DC Current Gain
(I C = 1.0 mAdc, V CE = 5.0 Vdc)
(I C = 10 mAdc, V CE = 5.0 Vdc)
MMBT5550GH
MMBT5551GH
MMBT5550GH
MMBT5551GH
(I C = 50 mAdc, V CE = 5.0Vdc)
Collector–Emitter Saturation Voltage
(I C = 10 mAdc, I B = 1.0 mAdc)
(I C = 50 mAdc, I B = 5.0 mAdc )
Base–Emitter Saturation Voltage
(I C = 10 mAdc, I B = 1.0 mAdc)
(I C = 50 mAdc, I B = 5.0 mAdc)
REV. 0
hFE
MMBT5550GH
MMBT5551GH
––
VCE(sat)
Vdc
Both Types
—
0.15
MMBT5550GH
MMBT5551GH
—
—
0.25
0.20
Both Types
—
1.0
MMBT5550GH
MMBT5551GH
—
1.2
—
1.0
V
Vdc
BE(sat)
Zowie Technology Corporation
Zowie Technology Corporation
h FE, DC CURRENT GAIN (NORMALIZED)
MMBT5550GH
MMBT5551GH
500
300
V CE = 1.0 V
T J = +125°C
200
V CE = 5.0 V
+25°C
100
–55°C
50
30
20
10
7.0
5.0
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
V CE, COLLECTOR EMITTER VOLTAGE (VOLTS)
I C , COLLECTOR CURRENT (mA)
Figure 15. DC Current Gain
1.0
T J = 25°C
0.8
I C = 1.0 mA
10 mA
0.6
30 mA
100 mA
0.4
0.2
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
I B , BASE CURRENT (mA)
Figure 16. Collector Saturation Region
10 1
1.0
T J = 25°C
V CE = 30 V
0.8
10
–1
T J = 125°C
I C= I
10 –2
10 –3
CES
75°C
REVERSE
FORWARD
25°C
10 –4
V BE(sat) @ I C /I B = 10
0.6
0.4
0.2
V CE(sat) @ I C /I B = 10
10
–5
0
–0.4 –0.3
REV. 0
V, VOLTAGE (VOLTS)
I C, COLLECTOR CURRENT (µA)
10 0
–0.2
–0.1
0
0.1
0.2
0.3
0.4
0.5
0.6
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
20 30
50
V BE , BASE–EMITTER VOLTAGE (VOLTS)
I C , COLLECTOR CURRENT (mA)
Figure 3. Collector Cut–Off Region
Figure 4. “On” Voltages
100
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Zowie Technology Corporation
2.5
T J = –55°C to +135°C
2
1.5
1.0
10.2 V
V BB
θ VC for V CE(sat)
0.5
V in
100
0
–0.5
1.0
2.0 3.0 5.0
10
20 30
50
100
V in
t r , t f <10 ns
DUTY CYCLE = 1.0%
–2.0
0.5
V out
5.1 k
–1.5
0.2 0.3
RC
INPUT PULSE
θ VB for V BE(sat)
–2.5
0.1
3.0 k
30 V
RB
0.25 mF
10 ms
–1.0
V CC
–8.8 V
1N914
100
θ
V
, TEMPERATURE COEFFICIENT (mV/°C)
MMBT5550GH
MMBT5551GH
Values Shown are for I C @ 10 mA
I C , COLLECTOR CURRENT (mA)
Figure 6. Switching Time Test Circuit
Figure 5. Temperature Coefficients
100
1000
70
50
I C /I B = 10
T J = 25°C
T J = 25°C
30
300
20
200
10
7.0
t, TIME (ns)
C, CAPACITANCE (pF)
500
C ibo
5.0
C obo
3.0
t r @ V CC = 30 V
100
2.0
1.0
0.2
t r @ V CC = 120 V
50
t d @ V EB(off) = 1.0 V
30
V CC = 120 V
20
10
0.3
0.7 0.5 1.0
2.0
3.0
5.0 7.0
10
0.2 0.3 0.5
20
1.0
2.0 3.0
5.0
10
20 30
50
V R , REVERSE VOLTAGE (VOLTS)
I C , COLLECTOR CURRENT (mA)
Figure 7. Capacitances Figure
8. Turn–On Time
100
200
5000
I C /I B = 10
T J = 25°C
t f @ V CC = 120 V
3000
2000
t f @ V CC = 30 V
t, TIME (ns)
1000
500
300
t s @ V CC = 120 V
200
100
50
0.2 0.3 0.5
1.0
2.0 3.0
5.0
10
20 30
50
100
200
I C , COLLECTOR CURRENT (mA)
Figure 9. Turn–Off Time
REV. 0
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