ETC BCW66HTA Sot23 npn silicon planar medium power transistor Datasheet

BCW65
BCW66
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
Collector-Emitter
Breakdown Voltage
SYMBOL MIN.
TYP.
MAX. UNIT CONDITIONS.
BCW65
BCW66
V(BR)CEO 32
45
V
ICEO=10mA
ICEO=10mA
BCW65
BCW66
V(BR)CES 60
75
V
IC=10µA
IC=10µA
5
V
IEBO =10µA
20
20
nA
µA
VCES = 32V
VCES = 32V ,Tamb=150oC
20
20
µA
nA
VCES = 45V
VCES = 45V ,Tamb=150oC
20
nA
VEBO =4V
Emitter-Base Breakdown Voltage
V(BR)EBO
Collector-Emitter
Cut-off Current
ICES
BCW65
BCW66
Emitter-Base Cut-Off Current
IEBO
Collector-Emitter Saturation Voltage
VCE(sat)
Base-Emitter Saturation Voltage
Static
Forward
Current
Transfer
BCW65
BCW66
SOT23 NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS
VBE(SAT)
BCW65A hFE
BCW66F
35
75
100
35
BCW65B hFE
BCW66G
50
110
160
60
BCW65C hFE
BCW66H
80
180
250
100
Transition Frequency
fT
Collector-Base Capacitance
Ccbo
Emitter-Base Capacitance
Cebo
Noise Figure
N
Switching times:
Turn-On Time
Turn-Off Time
ton
toff
160
250
350
0.3 V
0.7 V
IC=100mA, IB =10mA
IC= 500mA, IB =50mA*
2
IC=500mA, IB=50mA*
V
ISSUE 3 - AUGUST 1995
PARTMARKING DETAILS –
BCW65A – EA
BCW65B – EB
BCW65C – EC
BCW66F – EF
BCW66G – EG
BCW66H – EH
BCW65AR –
BCW65BR –
BCW65CR –
BCW66FR –
BCW66GR –
BCW66HR –
4V
5V
6V
7P
5T
7M
COMPLEMENTARY TYPES –
BCW65 – BCW67
BCW66 – BCW68
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
BCW65
BCW66
UNIT
Collector-Base Voltage
VCBO
60
75
V
Collector-Emitter Voltage
VCEO
32
45
V
Emitter-Base Voltage
VEBO
5
V
Continuous Collector Current
IC
800
mA
250
VCE =10V
VCE = 1V
VCE = 1V*
VCE = 2V*
Peak Collector Current(10ms)
ICM
1000
mA
Base Current
IB
100
mA
VCE =10V
VCE = 1V
VCE = 1V*
VCE = 2V*
Power Dissipation at Tamb=25°C
Ptot
330
mW
400
IC=100µA,
IC= 10mA,
IC=100mA,
IC=500mA,
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
630
IC=100µA,
IC= 10mA,
IC=100mA,
IC=500mA,
VCE =10V
VCE = 1V
VCE = 1V*
VCE = 2V*
MHz IC =20mA, VCE =10V
f = 100MHz
2
12
pF
VCBO=10V, f =1MHz
80
pF
VEBO=0.5V, f =1MHz
10
dB
IC= 0.2mA, VCE = 5V
RG =1kΩ
100
400
ns
ns
IC=150mA
IB1=- IB2 =15mA
RL=150Ω
Spice parameter data is available upon request for this device
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
3 - 28
B
IC=100µA,
IC= 10mA,
IC=100mA,
IC=500mA,
100
8
E
C
3 - 27
BCW65
BCW66
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
Collector-Emitter
Breakdown Voltage
SYMBOL MIN.
TYP.
MAX. UNIT CONDITIONS.
BCW65
BCW66
V(BR)CEO 32
45
V
ICEO=10mA
ICEO=10mA
BCW65
BCW66
V(BR)CES 60
75
V
IC=10µA
IC=10µA
5
V
IEBO =10µA
20
20
nA
µA
VCES = 32V
VCES = 32V ,Tamb=150oC
20
20
µA
nA
VCES = 45V
VCES = 45V ,Tamb=150oC
20
nA
VEBO =4V
Emitter-Base Breakdown Voltage
V(BR)EBO
Collector-Emitter
Cut-off Current
ICES
BCW65
BCW66
Emitter-Base Cut-Off Current
IEBO
Collector-Emitter Saturation Voltage
VCE(sat)
Base-Emitter Saturation Voltage
Static
Forward
Current
Transfer
BCW65
BCW66
SOT23 NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS
VBE(SAT)
BCW65A hFE
BCW66F
35
75
100
35
BCW65B hFE
BCW66G
50
110
160
60
BCW65C hFE
BCW66H
80
180
250
100
Transition Frequency
fT
Collector-Base Capacitance
Ccbo
Emitter-Base Capacitance
Cebo
Noise Figure
N
Switching times:
Turn-On Time
Turn-Off Time
ton
toff
160
250
350
0.3 V
0.7 V
IC=100mA, IB =10mA
IC= 500mA, IB =50mA*
2
IC=500mA, IB=50mA*
V
ISSUE 3 - AUGUST 1995
PARTMARKING DETAILS –
BCW65A – EA
BCW65B – EB
BCW65C – EC
BCW66F – EF
BCW66G – EG
BCW66H – EH
BCW65AR –
BCW65BR –
BCW65CR –
BCW66FR –
BCW66GR –
BCW66HR –
4V
5V
6V
7P
5T
7M
COMPLEMENTARY TYPES –
BCW65 – BCW67
BCW66 – BCW68
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
BCW65
BCW66
UNIT
Collector-Base Voltage
VCBO
60
75
V
Collector-Emitter Voltage
VCEO
32
45
V
Emitter-Base Voltage
VEBO
5
V
Continuous Collector Current
IC
800
mA
250
VCE =10V
VCE = 1V
VCE = 1V*
VCE = 2V*
Peak Collector Current(10ms)
ICM
1000
mA
Base Current
IB
100
mA
VCE =10V
VCE = 1V
VCE = 1V*
VCE = 2V*
Power Dissipation at Tamb=25°C
Ptot
330
mW
400
IC=100µA,
IC= 10mA,
IC=100mA,
IC=500mA,
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
630
IC=100µA,
IC= 10mA,
IC=100mA,
IC=500mA,
VCE =10V
VCE = 1V
VCE = 1V*
VCE = 2V*
MHz IC =20mA, VCE =10V
f = 100MHz
2
12
pF
VCBO=10V, f =1MHz
80
pF
VEBO=0.5V, f =1MHz
10
dB
IC= 0.2mA, VCE = 5V
RG =1kΩ
100
400
ns
ns
IC=150mA
IB1=- IB2 =15mA
RL=150Ω
Spice parameter data is available upon request for this device
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
3 - 28
B
IC=100µA,
IC= 10mA,
IC=100mA,
IC=500mA,
100
8
E
C
3 - 27
Similar pages