JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors A42 TRANSISTOR（ NPN ） TO—92 FEATURES Power dissipation PCM : 0.625 W（Tamb=25℃） Collector current ICM : 0.5 A Collector-base voltage V(BR)CBO : 300 V Operating and storage junction temperature range T J ，T stg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS（Tamb=25℃ Parameter Symbol 1.EMITTER 2.BASE 3.COLLECTOR 1 2 3 unless Test otherwise conditions specified） MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 100μA， IE=0 300 V Collector-emitter breakdown voltage V(BR)CEO Ic= 1 mA， IB=0 300 V Emitter-base breakdown voltage V(BR)EBO IE= 100μA， IC=0 5 V Collector cut-off current ICBO VCB= 200 V Emitter cut-off current IEBO VEB= 5 IE=0 0.25 μA V， IC=0 0.1 μA hFE（1） VCE= 10 V, IC= 1 mA 60 hFE（2） VCE= 10V, IC = 10 mA 80 HFE（3） VCE= 10 V, IC=30 mA 75 Collector-emitter saturation voltage VCE(sat) IC= 20 mA, IB= 2 mA 0.2 V Base-emitter saturation voltage VBE(sat) IC= 20m A, IB= 2 mA 0.9 V VCE=20 V, f =30MHz IC= 10 mA DC current gain Transition frequency fT 250 50 MHz CLASSIFICATION OF h FE(2) Rank A B1 B2 C Range 80-100 100-150 150-200 200-250 TO-92 PACKAGE OUTLINE DIMENSIONS D1 E C A A1 D b L φ e e1 Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 3.300 3.700 0.130 0.146 A1 1.100 1.400 0.043 0.055 b 0.380 0.550 0.015 0.022 c 0.360 0.510 0.014 0.020 D 4.400 4.700 0.173 0.185 D1 3.430 E 4.300 0.135 4.700 0.169 1.270TYP e 0.185 0.050TYP e1 2.440 2.640 0.096 0.104 L 14.100 14.500 0.555 0.571 1.600 Ö 0.000 0.380 0.063 0.000 0.015