AMIC A43E06321G-95UF 512k x 32 bit x 2 banks low power synchronous dram Datasheet

A43E06321
Preliminary
512K X 32 Bit X 2 Banks Low Power Synchronous DRAM
Document Title
512K X 32 Bit X 2 Banks Low Power Synchronous DRAM
Revision History
Rev. No.
0.0
PRELIMINARY
History
Issue Date
Remark
Initial issue
July 21, 2005
Preliminary
(July, 2005, Version 0.0)
AMIC Technology, Corp.
A43E06321
Preliminary
512K X 32 Bit X 2 Banks Low Power Synchronous DRAM
Features
64ms refresh period (4K cycle)
Self refresh with programmable refresh period through
EMRS cycle
Programmable Power Reduction Feature by partial
array activation during Self-refresh through EMRS
cycle
Auto TCSR
Industrial operating temperature range: -40ºC to +85ºC
for -U series.
Available in 90 Balls CSP (8mm X 13mm)
Package is available to lead free (-F series)
Low power supply
- VDD: 1.8V VDDQ : 1.8V
LVCMOS compatible with multiplexed address
Two banks / Pulse RAS
MRS cycle with address key programs
- CAS Latency (2 & 3)
- Burst Length (1,2,4,8 & full page)
- Burst Type (Sequential & Interleave)
All inputs are sampled at the positive going edge of the
system clock
Deep Power Down Mode
DQM for masking
Auto & self refresh
Clock Frequency (max) : 105MHz @ CL=3 (-95)
133MHz @ CL=3 (-75)
General Description
The A43E06321 is 33,554,432 bits Low Power
synchronous high data rate Dynamic RAM organized as 2
X 524,288 words by 32 bits, fabricated with AMIC’s high
performance CMOS technology. Synchronous design
allows precise cycle control with the use of system clock.
I/O transactions are possible on every clock cycle. Range
of operating frequencies, programmable latencies allows
the same device to be useful for a variety of high
bandwidth,
high
performance
memory
system
applications.
Pin Configuration
90 Balls CSP (8 mm x 13 mm)
Top View
PRELIMINARY
90 Ball (8X13) CSP
2
3
7
DQ24
VSS
VDD
VDDQ
VSSQ
VDDQ
DQ27
DQ25
DQ22
DQ29
DQ30
DQ17
DQ31
NC
NC
A2
DQM3
A3
A5
A6
A10
A8
NC
NC
CKE
A9
BA
A
B
C
D
E
F
G
H
J
1
DQ26
DQ28
VSSQ
VSSQ
VDDQ
VSS
A4
A7
CLK
K
DQM1
NC
NC
CAS
WE
DQM0
L
M
N
P
R
VDDQ
VSSQ
VSSQ
DQ11
DQ13
DQ8
DQ10
DQ12
VDDQ
DQ15
VSS
DQ9
DQ14
VSSQ
VSS
VDD
DQ6
DQ1
VDDQ
VDD
DQ7
DQ5
DQ3
VSSQ
DQ0
VSSQ
VDDQ
VDDQ
DQ4
DQ2
(July, 2005, Version 0.0)
1
8
DQ23
VSSQ
DQ20
DQ18
DQ16
DQM2
A0
NC
9
DQ21
DQ19
VDDQ
VDDQ
VSSQ
CS
RAS
VDD
A1
NC
AMIC Technology, Corp.
A43E06321
Block Diagram
LWE
Output Buffer
512K X 32
Sense AMP
512K X 32
DQM
DQi
Column Buffer
LCBR
LRAS
ADD
Row Decoder
Row Buffer
Refresh Counter
Address Register
CLK
I/O Control
Data Input Register
Bank Select
Column Decoder
Latency & Burst Length
LRAS
Programming Register
LCAS
LRAS
LCBR
DQM
LWE
LWCBR
Timing Register
CLK
PRELIMINARY
CKE
(July, 2005, Version 0.0)
CS
RAS
CAS
2
WE
DQM
AMIC Technology, Corp.
A43E06321
Pin Descriptions
Symbol
Name
Description
CLK
System Clock
Active on the positive going edge to sample all inputs.
CS
Chip Select
Disables or Enables device operation by masking or enabling all inputs except
CLK, CKE and DQM
Masks system clock to freeze operation from the next clock cycle.
CKE
Clock Enable
CKE should be enabled at least one clock + tss prior to new command.
Disable input buffers for power down in standby.
Row / Column addresses are multiplexed on the same pins.
A0~A10
Address
Row address : RA0~RA10, Column address: CA0~CA7
Selects bank to be activated during row address latch time.
BA
Bank Select Address
Selects band for read/write during column address latch time.
RAS
Row Address Strobe
Latches row addresses on the positive going edge of the CLK with RAS low.
Enables row access & precharge.
Column Address
Strobe
Latches column addresses on the positive going edge of the CLK with CAS low.
WE
Write Enable
Enables write operation and Row precharge.
Data Input/Output
Mask
Makes data output Hi-Z, t SHZ after the clock and masks the output.
DQMi
Blocks data input when DQM active.
DQ0-31
Data Input/Output
Data inputs/outputs are multiplexed on the same pins.
VDD/VSS
Power
Supply/Ground
Power Supply: +1.7V ~ 1.95V/Ground
VDDQ/VSSQ
Data Output
Power/Ground
Provide isolated Power/Ground to DQs for improved noise immunity.
NC/RFU
No Connection
CAS
PRELIMINARY
Enables column access.
(July, 2005, Version 0.0)
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AMIC Technology, Corp.
A43E06321
Absolute Maximum Ratings*
*Comments
Voltage on any pin relative to VSS (Vin, Vout ) . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -1.0V to +2.6V
Voltage on VDD supply relative to VSS (VDD, VDDQ )
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-1.0V to + 2.6V
Storage Temperature (TSTG) . . . . . . . . . . -55°C to +150°C
Soldering Temperature X Time (TSLODER) . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C X 10sec
Power Dissipation (PD) . . . . . . . . . . . . . . . . . . . . . . . . 0.8W
Short Circuit Current (Ios) . . . . . . . . . . . . . . . . . . . . 50mA
Permanent device damage may occur if “Absolute
Maximum Ratings” are exceeded.
Functional operation should be restricted to recommended
operating condition.
Exposure to higher than recommended voltage for
extended periods of time could affect device reliability.
Capacitance (TA=25°C, f=1MHz)
Parameter
Input Capacitance
Data Input/Output Capacitance
Symbol
Condition
Min
Max
Unit
CI1
A0 to A10, BA
2.0
4.0
pF
CI2
CLK, CKE, CS , RAS , CAS , WE , DQM
2.0
4.0
pF
CI/O
DQ0 to DQ31
3.5
6.0
pF
DC Electrical Characteristics
Recommend operating conditions
(Voltage referenced to VSS=0V, TA = 0ºC to +70ºC for commercial or TA =-40ºC to +85ºC for extended)
Parameter
Symbol
Min
Typ
Max
Unit
VDD
1.7
1.8
1.95
V
DQ Supply Voltage
VDDQ
1.7
1.8
1.95
V
Input High Voltage
VIH
0.8*VDDQ
-
VDDQ+0.3
V
Input Low Voltage
VIL
-0.3
-
0.3
V
Note 1
Output High Voltage
VOH
VDDQ - 0.2
-
-
V
IOH = -0.1mA
Output Low Voltage
VOL
-
-
0.2
V
IOL = 0.1mA
Input Leakage Current
IIL
-1
-
1
µA
Note 2
Output Leakage Current
IOL
-1.5
-
1.5
µA
Note 3
Supply Voltage
Output Loading Condition
Note
See Fig. 1 (Page 6)
Note: 1. VIL (min) = -1.5V AC (pulse width ≤ 5ns).
2. Any input 0V ≤ VIN ≤ VDD + 0.3V, all other pins are not under test = 0V
3. Dout is disabled, 0V ≤ Vout ≤ VDD
PRELIMINARY
(July, 2005, Version 0.0)
4
AMIC Technology, Corp.
A43E06321
Decoupling Capacitance Guide Line
Recommended decoupling capacitance added to power line at board
Parameter
Symbol
Value
Unit
Decoupling Capacitance between VDD and VSS
CDC1
0.1 + 0.01
µF
Decoupling Capacitance between VDDQ and VSSQ
CDC2
0.1 + 0.01
µF
Note: 1. VDD and VDDQ pins are separated each other.
All VDD pins are connected in chip. All VDDQ pins are connected in chip.
2. VSS and VSSQ pins are separated each other
All VSS pins are connected in chip. All VSSQ pins are connected in chip.
DC Electrical Characteristics
(Recommended operating condition unless otherwise noted, TA = 0ºC to +70ºC for commercial or TA = -40ºC to +85ºC for extended)
Symbol
Parameter
Speed
Test Conditions
-75
Icc1
Icc2 P
Icc2 PS
ICC2N
Operating Current
(One Bank Active)
Precharge Standby Current
in power-down mode
Precharge Standby Current
in non power-down mode
ICC2NS
ICC3P
ICC3N
Active Standby current in
non power-down mode
(One Bank Active)
Units
Note
1
-95
Burst Length = 1
tRC ≥ tRC(min), tCC ≥ tCC(min), IOL = 0mA
40
mA
CKE ≤ VIL(max), tCC = 15ns
0.3
mA
CKE ≤ VIL(max), tCC = ∞
0.5
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 15ns
Input signals are changed one time during 30ns
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
Input signals are stable.
5.5
mA
2
CKE ≤ VIL(max), tCC = 15ns
1.5
mA
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 15ns
Input signals are changed one time during 30ns
12
ICC4
Operating Current
(Burst Mode)
IOL = 0mA, Page Burst
All bank Activated, tCCD = tCCD (min)
45
mA
1
ICC5
Refresh Current
tRC ≥ tRC (min)
60
mA
2
ICC6
Self Refresh Current
CKE ≤ 0.2V
ICC7
Deep Power Down Current
2 Banks
100
1 Banks
80
uA
CKE ≤ 0.2V
10
uA
Note: 1. Measured with outputs open. Addresses are changed only one time during tCC(min).
2. Refresh period is 64ms. Addresses are changed only one time during tCC(min).
PRELIMINARY
(July, 2005, Version 0.0)
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AMIC Technology, Corp.
A43E06321
AC Operating Test Conditions
(VDD = 1.7V~1.95V, TA = 0ºC to +70ºC for commercial or TA =-40ºC to +85ºC for extended)
Parameter
Value
Unit
AC input levels
0.9 x VDDQ/0.2
V
Input timing measurement reference level
0.5 x VDDQ
V
Input rise and all time (See note3)
tr/tf = 1/1
ns
Output timing measurement reference level
0.5 x VDDQ
V
Output load condition
See Fig.2
1.8V
13.9KΩ
VOH(DC) = VDDQ-0.2V, IOH = -0.1mA
VOL(DC) = 0.2V, IOL = 0.1mA
VTT =0.5V x VDDQ
50Ω
Output
ZO=50Ω
OUTPUT
10.6KΩ
30pF
30pF
(Fig. 2) AC Output Load Circuit
(Fig. 1) DC Output Load Circuit
AC Characteristics
(AC operating conditions unless otherwise noted)
Symbol
-75
Parameter
Min
tCC
CLK cycle time
tSAC
CLK to valid
Output delay
tOH
Output data hold time
-95
Max
Min
CL=3
7.5
CL=2
12
CL=3
-
6
-
7
CL=2
-
8
-
9
2
-
2
-
CL=3
2.5
-
3
-
CL=2
2.5
-
3
-
CL=3
2.5
-
3
-
CL=2
2.5
-
3
-
CL=3
2
-
2
-
CL=2
2
-
2
-
1000
9.5
15
Unit
Note
ns
1
ns
1,2
ns
2
ns
3
ns
3
ns
3
Max
1000
tCH
CLK high pulse width
tCL
CLK low pulse width
tSS
Input setup time
tSH
Input hold time
1
-
1
-
ns
3
tSLZ
CLK to output in Low-Z
1
-
1
-
ns
2
tSHZ
CLK to output in Hi-Z
CL=3
-
6
-
7
CL=2
-
8
-
8
CL=CAS Latency.
ns
*All AC parameters are measured from half to half.
Note : 1. Parameters depend on programmed CAS latency.
2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter.
3. Assumed input rise and fall time (tr & tf) = 1ns.
If tr & tf is longer than 1ns, transient time compensation should be considered,
i.e., [(tr + tf)/2-1]ns should be added to the parameter.
PRELIMINARY
(July, 2005, Version 0.0)
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AMIC Technology, Corp.
A43E06321
Operating AC Parameter
(AC operating conditions unless otherwise noted)
Version
Symbol
Parameter
-75
-95
Unit
Note
tRRD(min)
Row active to row active delay
15
19
ns
1
tRCD(min)
RAS to CAS delay
20
24
ns
1
tRP(min)
Row precharge time
20
24
ns
1
50
50
ns
1
100
100
µs
tRAS(min)
Row active time
tRAS(max)
tRC(min)
Row cycle time
72.5
74
ns
1
tCDL(min)
Last data in new col. Address delay
7.5
9.5
ns
2
tRDL(min)
Last data in row precharge
15
15
ns
2
tBDL(min)
Last data in to burst stop
7.5
9.5
ns
2
tCCD(min)
Col. Address to col. Address delay
7.5
9.5
ns
Note: 1. The minimum number of clock cycles is determined by dividing the minimum time required with clock cycle time and
then rounding off to the next higher integer.
2. Minimum delay is required to complete write.
PRELIMINARY
(July, 2005, Version 0.0)
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AMIC Technology, Corp.
A43E06321
Simplified Truth Table
Command
CKEn-1 CKEn
CS RAS
CAS
WE DQM BA A10
A9~A0
Notes
/AP
Register
Mode Register Set
Extended Mode Register Set
Refresh
H
X
L
L
L
L
X
OP CODE
1,2
H
X
L
L
L
L
L
OP CODE
1,2
L
L
L
H
X
X
L
H
H
H
X
X
Auto Refresh
Self
Refresh
3
H
Entry
Exit
H
L
L
H
Bank Active & Row Addr.
H
Read &
Auto Precharge Disable
Column Addr. Auto Precharge Enable
3
H
X
X
X
X
L
L
H
H
X
V
H
X
L
H
L
H
X
V
Write &
Auto Precharge Disable
Column Addr. Auto Precharge Enable
H
X
L
H
L
L
X
V
Burst Stop
H
X
L
H
H
L
X
Precharge
Clock Suspend or
Active Power Down
X
H
L
Exit
L
H
Entry
H
L
Exit
L
H
Entry
H
L
H
Precharge Power Down Mode
DQM
H
No Operation Command
H
X
Deep Power Down Entry
H
Deep Power Down Exit
L
L
L
H
L
L
H
H
H
H
X
X
X
X
X
X
X
L
H
H
H
H
X
X
X
L
V
V
V
X
X
X
H
X
X
3
Row Addr.
L
Bank Selection
Both Banks
3
H
Column
Addr.
4,5
Column
Addr.
4,5
X
V
L
X
H
4
4
4
6
X
X
X
X
X
X
X
V
X
X
X
L
H
H
H
H
X
X
X
L
L
H
H
L
X
X
H
X
X
X
X
X
X
7
8
(V = Valid, X = Don’t Care, H = Logic High, L = Logic Low)
Note : 1. OP Code: Operand Code
A0~A10, BA: Program keys. (@MRS, EMRS)
2. MRS can be issued only when all banks are at precharge state.
A new command can be issued after 2 clock cycle of MRS, EMRS.
3. Auto refresh functions is same as CBR refresh of DRAM.
The automatical precharge without Row precharge command is meant by “Auto”.
Auto/Self refresh can be issued only when all banks are at precharge state.
4. BA: Bank select address.
5. During burst read or write with auto precharge, new read/write command cannot be issued.
Another bank read/write command can be issued at every burst length.
6. Bust stop command is valid at every burst length.
7. DQM sampled at positive going edge of a CLK masks the data-in at the very CLK (Write DQM latency is 0)
but masks the data-out Hi-Z state after 2 CLK cycles. (Read DQM latency is 2)
8. After Deep Power Down mode exit, a full new initialization of the memory device is mandatory.
PRELIMINARY
(July, 2005, Version 0.0)
8
AMIC Technology, Corp.
A43E06321
Mode Register Filed Table to Program Modes
Register Programmed with MRS
Address
Function
BA
A10
A9
0
RFU
W.B.L
(Note 3)
(Note 1)
A7
A6
TM
A5
A4
A3
CAS Latency
A2
BT
A1
A0
Burst Length
(Note 2)
Test Mode
A8
A8
CAS Latency
Burst Type
Burst Length
A7
Type
A6
A5
A4
Latency
A3
Type
A2
A1
A0
BT=0
BT=1
0
0
Mode Register Set
0
0
0
Reserved
0
Sequential
0
0
0
1
1
0
1
Vendor
0
0
1
-
1
Interleave
0
0
1
2
2
1
0
Use
0
1
0
2
0
1
0
4
4
1
1
Only
0
1
1
3
0
1
1
8
8
1
0
0
Reserved
1
0
0
Reserved
Reserved
Write Burst Length
A9
Length
1
0
1
Reserved
1
0
1
Reserved
Reserved
0
Burst
1
1
0
Reserved
1
1
0
Reserved
Reserved
1
Single Bit
1
1
1
Reserved
1
1
1
256(Full)
Reserved
Note : 1. RFU(Reserved for Future Use) should stay “0” during MRS cycle.
2. If A9 is high during MRS cycle, “Burst Read Single Bit Write” function will be enabled.
3. BA must be 0,0 to select the Mode Register (vs. the Extended Mode Register).
Extended Mode Register Table
BA
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
↓
↓
↓
↓
↓
↓
↓
↓
↓
↓
↓
↓
1
All have to be set to “0”
Bank
Up/Down
DS
0
Address Bus (Ax)
PASR
(Note)
Driver Strength
Partial-Array Self Refresh:
Driver Strength
A6
0
0
1
1
A5
0
1
0
1
Driver Strength
Full
3/4
1/2
1/4
A7
A2
A1
A0
Banks to be Self-Refreshed
0
0
0
0
0
0
0
0
0
0
1
1
0
1
0
1
All banks (Bank 0, 1)
Reserved
Bank 0
Reserved
0
1
1
1
1
1
1
0
0
0
0
1
X
0
0
1
1
X
X
0
1
0
1
X
Reserved
All banks (Bank 0, 1)
Reserved
One bank (Bank 1)
Reserved
Reserved
Note: BA must be 1 to select the Extended Mode Register (vs. the Mode Register)
PRELIMINARY
(July, 2005, Version 0.0)
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AMIC Technology, Corp.
A43E06321
Power Up Sequence
1. Apply power and start clock, Attempt to maintain CKE = “H”, DQM = “H” and the other pins are NOP condition at inputs.
2. Maintain stable power, stable clock and NOP input condition for a minimum of 200µs.
3. Issue precharge commands for all banks of the devices.
4. Issue 2 or more auto-refresh commands.
5. Issue a mode register set command to initialize the mode register. The device is now ready for normal operation.
6. Issue a extended mode register set command to define DS or PASR operating type of the device after normal MRS.
cf.) Sequence of 4 & 5 may be changed.
EMRS cycle is not mandatory and the EMRS command needs to be issued only when DS or PASR is used.
The default state without EMRS command issued is the half driver strength and full array refreshed.
The device is now ready for the operation selected by EMRS.
For operating with DS or PASR, set DS or PASR mode in EMRS setting stage.
In order to adjust another mode in the state of DS or PASR mode, additional EMRS set is required but power up sequence is not
needed again at this time. In that case, all banks have to be in idle state prior to adjusting EMRS set.
Burst Sequence (Burst Length = 4)
Initial address
Sequential
Interleave
A1
A0
0
0
0
1
2
3
0
1
2
3
0
1
1
2
3
0
1
0
3
2
1
0
2
3
0
1
2
3
0
1
1
1
3
0
1
2
3
2
1
0
Burst Sequence (Burst Length = 8)
Initial address
Sequential
Interleave
A2
A1
A0
0
0
0
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
0
0
1
1
2
3
4
5
6
7
0
1
0
3
2
5
4
7
6
0
1
0
2
3
4
5
6
7
0
1
2
3
0
1
6
7
4
5
0
1
1
3
4
5
6
7
0
1
2
3
2
1
0
7
6
5
4
1
0
0
4
5
6
7
0
1
2
3
4
5
6
7
0
1
2
3
1
0
1
5
6
7
0
1
2
3
4
5
4
7
6
1
0
3
2
1
1
0
6
7
0
1
2
3
4
5
6
7
4
5
2
3
0
1
1
1
1
7
0
1
2
3
4
5
6
7
6
5
4
3
2
1
0
PRELIMINARY
(July, 2005, Version 0.0)
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AMIC Technology, Corp.
A43E06321
The clock signal must also be asserted at the same time.
2. After VDD reaches the desired voltage, a minimum pause
of 200 microseconds is required with inputs in NOP
condition.
3. All banks must be precharged now.
4. Perform a minimum of 2 Auto refresh cycles to stabilize
the internal circuitry.
5. Perform a MODE REGISTER SET cycle to program the
CAS latency, burst length and burst type as the default
value of mode register is undefined.
At the end of one clock cycle from the mode register set
cycle, the device is ready for operation.
When the above sequence is used for Power-up, all the
out-puts will be in high impedance state. The high
impedance of outputs is not guaranteed in any other
power-up sequence.
cf.) Sequence of 4 & 5 may be changed.
Device Operations
Clock (CLK)
The clock input is used as the reference for all SDRAM
operations. All operations are synchronized to the positive
going edge of the clock. The clock transitions must be
monotonic between VIL and VIH. During operation with CKE
high all inputs are assumed to be in valid state (low or high)
for the duration of set up and hold time around positive edge
of the clock for proper functionality and ICC specifications.
Clock Enable (CKE)
The clock enable (CKE) gates the clock onto SDRAM. If
CKE goes low synchronously with clock (set-up and hold
time same as other inputs), the internal clock is suspended
from the next clock cycle and the state of output and burst
address is frozen as long as the CKE remains low. All other
inputs are ignored from the next clock cycle after CKE goes
low. When all banks are in the idle state and CKE goes low
synchronously with clock, the SDRAM enters the power
down mode from the next clock cycle. The SDRAM remains
in the power down mode ignoring the other inputs as long as
CKE remains low. The power down exit is synchronous as
the internal clock is suspended. When CKE goes high at
least “tSS + 1 CLOCK” before the high going edge of the
clock, then the SDRAM becomes active from the same clock
edge accepting all the input commands.
Mode Register Set (MRS)
The mode register stores the data for controlling the various
operation modes of SDRAM. It programs the CAS latency,
addressing mode, burst length, test mode and various
vendor specific options to make SDRAM useful for variety of
different applications. The default value of the mode register
is not defined, therefore the mode register must be written
after power up to operate the SDRAM. The mode register is
written by asserting low on CS , RAS , CAS , WE (The
SDRAM should be in active mode with CKE already high
prior to writing the mode register). The state of address pins
A0~A10/AP,
BA
in
the
same
cycle
as
CS , RAS , CAS , WE going low is the data written in the
mode register. One clock cycle is required to complete the
write in the mode register. The mode register contents can
be changed using the same command and clock cycle
requirements during operation as long as all banks are in the
idle state. The mode register is divided into various fields
depending on functionality. The burst length field uses
A0~A2, burst type uses A3, addressing mode uses A4~A6,
A7~A8, A10/AP, BA are used for vendor specific options or
test mode. And the write burst length is programmed using
A7~A9, A10/AP, BA must be set to low for normal SDRAM
operation.
Refer to table for specific codes for various burst length,
addressing modes and CAS latencies. BA have to be set to
“0” to enter the Mode Register.
Bank Select (BA)
This SDRAM is organized as 2 independent banks of
524,288 words X 32 bits memory arrays. The BA inputs is
latched at the time of assertion of RAS and CAS to select
the bank to be used for the operation. The bank select BA is
latched at bank activate, read, write mode register set and
precharge operations.
Address Input (A0 ~ A10/AP)
The 19 address bits required to decode the 524,288 word
locations are multiplexed into 11 address input pins
(A0~A10/AP). The 11 bit row address is latched along with
RAS , BA during bank activate command. The 8 bit column
address is latched along with CAS , WE , BA during read
or write command.
NOP and Device Deselect
Extended Mode Register (EMRS)
When RAS , CAS and WE are high, the SDRAM
performs no operation (NOP). NOP does not initiate any new
operation, but is needed to complete operations which
require more than single clock like bank activate, burst read,
auto refresh, etc. The device deselect is also a NOP and is
entered by asserting CS high. CS high disables the
The Extended Mode Register controls functions beyond
those controlled by the Mode Register. These additional
functions are unique to AMIC’s Low Power SDRAM and
includes a Partial-Array Self Refresh field (PASR) and
Output Drive Strength. The Extended Mode Register is
programmed via the Mode Register Set command (BA=1)
and retains the stored information until it is programmed
again or the device loses power. The Extended Mode
Register must be programmed with A8 through A10 set to
“0”. The Extended Mode Register must be loaded when all
banks are idle and no bursts are in progress, and the
controller must wait the specified time initiating any
subsequent operation. Violating either of these requirements
results in unspecified operation.
command decoder so that RAS , CAS and WE , and all
the address inputs are ignored.
Power-Up
The following sequence is recommended for POWER UP
1. Power must be applied to either CKE and DQM inputs to
pull them high and other pins are NOP condition at the
inputs before or along with VDD (and VDDQ) supply.
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Auto Temperature Compensated Self Refresh
CS and CAS with WE being high on the positive edge of
the clock. The bank must be active for at least tRCD(min)
before the burst read command is issued. The first output
appears CAS latency number of clock cycles after the issue
of burst read command. The burst length, burst sequence
and latency from the burst read command is determined by
the mode register which is already programmed. The burst
read can be initiated on any column address of the active
row. The address wraps around if the initial address does not
start from a boundary such that number of outputs from each
I/O are equal to the burst length programmed in the mode
register. The output goes into high-impedance at the end of
the burst, unless a new burst read was initiated to keep the
data output gapless. The burst read can be terminated by
issuing another burst read or burst write in the same bank or
the other active bank or a precharge command to the same
bank. The burst stop command is valid at every page burst
length.
Every cell in the DRAM requires refreshing due to the
capacitor losing its charge over time. The refresh rate is
dependent on temperature. At higher temperatures a
capacitor loses charge quicker than at lower temperature,
requiring the cells to be refreshed more often. In order to
save power consumption, according to the temperature,
Mobile-SDRAM includes the internal temperature sensor and
control units to control the self refresh cycle automatically.
Partial Array Self Refresh
The Partial Array Self Refresh (PASR) feature allows the
controller to select the amount of memory that will be
refreshed during SELF REFRESH. The refresh options are
all banks (banks 0, 1); one bank (bank 0 or 1 by A7). WRITE
and READ commands occur to any bank selected during
standard operation, but only the selected banks in PASR will
be refreshed during SELF REFRESH. The data in banks 1
will be lost when the one bank option with A7=0 is used.
Similarly the data will be lost in bank 0 when the one bank
option with A7=1 is used down.
Burst Write
The burst write command is similar to burst read command,
and is used to write data into the SDRAM consecutive clock
cycles in adjacent addresses depending on burst length and
burst sequence. By asserting low on CS , CAS and WE
with valid column address, a write burst is initiated. The data
inputs are provided for the initial address in the same clock
cycle as the burst write command. The input buffer is
deselected at the end of the burst length, even though the
internal writing may not have been completed yet. The burst
write can be terminated by issuing a burst read and DQM for
blocking data inputs or burst write in the same or the other
active bank. The burst stop command is valid only at full
page burst length where the writing continues at the end of
burst and the burst is wrap around. The write burst can also
be terminated by using DQM for blocking data and
precharging the bank “tRDL” after the last data input to be
written into the active row. See DQM OPERATION also.
Driver Strength Control
The driver strength feature allows one to reduce the drive
strength of the I/O’s on the device during low frequency
operation. This allows systems to reduce the noise
associated with the I/O’s switching.
Bank Activate
The bank activate command is used to select a random row
in an idle bank. By asserting low on RAS and CS with
desired row and bank addresses, a row access is initiated.
The read or write operation can occur after a time delay of
tRCD(min) from the time of bank activation. tRCD(min) is an
internal timing parameter of SDRAM, therefore it is
dependent on operating clock frequency. The minimum
number of clock cycles required between bank activate and
read or write command should be calculated by dividing
tRCD(min) with cycle time of the clock and then rounding off
the result to the next higher integer. The SDRAM has 2
internal banks on the same chip and shares part of the
internal circuitry to reduce chip area, therefore it restricts the
activation of both banks simultaneously. Also the noise
generated during sensing of each bank of SDRAM is high
requiring some time for power supplies to recover before the
other bank can be sensed reliably. tRRD(min) specifies the
minimum time required between activating different banks.
The number of clock cycles required between different bank
activation must be calculated similar to tRCD specification.
The minimum time required for the bank to be active to
initiate sensing and restoring the complete row of dynamic
cells is determined by tRAS(min) specification before a
precharge command to that active bank can be asserted.
The maximum time any bank can be in the active state is
determined by tRAS(max). The number of cycles for both
tRAS(min) and tRAS(max) can be calculated similar to tRCD
specification.
DQM Operation
The DQM is used to mask input and output operation. It
works similar to OE during read operation and inhibits
writing during write operation. The read latency is two cycles
from DQM and zero cycle for write, which means DQM
masking occurs two cycles later in the read cycle and occurs
in the same cycle during write cycle. DQM operation is
synchronous with the clock, therefore the masking occurs for
a complete cycle. The DQM signal is important during burst
interrupts of write with read or precharge in the SDRAM. Due
to asynchronous nature of the internal write, the DQM
operation is critical to avoid unwanted or incomplete writes
when the complete burst write is not required.
Precharge
The precharge operation is performed on an active bank by
asserting low on CS , RAS , WE and A10/AP with valid BA
of the bank to be precharged. The precharge command can
be asserted anytime after tRAS(min) is satisfied from the bank
activate command in the desired bank. “tRP” is defined as the
minimum time required to precharge a bank.
The minimum number of clock cycles required to complete
row precharge is calculated by dividing “tRP” with clock cycle
time and rounding up to the next higher integer. Care should
Burst Read
The burst read command is used to access burst of data on
consecutive clock cycles from an active row in an active
bank. The burst read command is issued by asserting low on
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be taken to make sure that burst write is completed or DQM
is used to inhibit writing before precharge command is
asserted. The maximum time any bank can be active is
specified by tRAS(max). Therefore, each bank has to be
precharged within tRAS(max) from the bank activate
command. At the end of precharge, the bank enters the idle
state and is ready to be activated again.
Entry to Power Down, Auto refresh, Self refresh and Mode
register Set etc, is possible only when all banks are in idle
state.
time required to complete the auto refresh operation is
specified by “tRC(min)”. The minimum number of clock cycles
required can be calculated by dividing “tRC” with clock cycle
time and then rounding up to the next higher integer. The
auto refresh command must be followed by NOP’s until the
auto refresh operation is completed. All banks will be in the
idle state at the end of auto refresh operation. The auto
refresh is the preferred refresh mode when the SDRAM is
being used for normal data transactions. The auto refresh
cycle can be performed once in 15.6us or a burst of 4096
auto refresh cycles once in 64ms.
Auto Precharge
Self Refresh
The precharge operation can also be performed by using
auto precharge. The SDRAM internally generates the timing
to satisfy tRAS(min) and “tRP” for the programmed burst length
and CAS latency. The auto precharge command is issued at
the same time as burst read or burst write by asserting high
on A10/AP. If burst read or burst write command is issued
with low on A10/AP, the bank is left active until a new
command is asserted. Once auto precharge command is
given, no new commands are possible to that particular bank
until the bank achieves idle state.
The self refresh is another refresh mode available in the
SDRAM. The self refresh is the preferred refresh mode for
data retention and low power operation of SDRAM. In self
refresh mode, the SDRAM disables the internal clock and all
the input buffers except CKE. The refresh addressing and
timing is internally generated to reduce power consumption.
The self refresh mode is entered from all banks idle state by
asserting low on CS , RAS , CAS and CKE with high on
WE . Once the self refresh mode is entered, only CKE state
being low matters, all the other inputs including clock are
ignored to remain in the self refresh.
The self refresh is exited by restarting the external clock and
then asserting high on CKE. This must be followed by NOP’s
for a minimum time of “tRC” before the SDRAM reaches idle
state to begin normal operation. Upon exiting the self refresh
mode, AUTO REFRESH commands must be issued every
15.6 μ s or less as both SELF REFRESH and AUTO
REFRESH utilize the row refresh counter.
All Banks Precharge
All banks can be precharged at the same time by using
Precharge all command. Asserting low on CS , RAS and
WE with high on A10/AP after both banks have satisfied
tRAS(min) requirement, performs precharge on all banks. At
the end of tRP after performing precharge all, all banks are
in idle state.
Auto Refresh
Deep Power Down Mode
The storage cells of SDRAM need to be refreshed every
64ms to maintain data. An auto refresh cycle accomplishes
refresh of a single row of storage cells. The internal counter
increments automatically on every auto refresh cycle to
refresh all the rows. An auto refresh command is issued by
asserting low on CS , RAS and CAS with high on CKE
The Deep Power Down Mode is an unique function on Low
Power SDRAMs with very low standby currents. All internal
voltage generators inside the Low Power SDRAMs are
stopped and all memory data will be lost in this mode. To
enter the Deep Power Down Mode all banks must be
precharged and the necessary Precharged Delay tRP must
occur.
and WE . The auto refresh command can only be asserted
with all banks being in idle state and the device is not in
power down mode (CKE is high in the previous cycle). The
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Basic feature And Function Descriptions
1. CLOCK Suspend
1) Click Suspended During Write (BL=4)
2) Clock Suspended During Read (BL=4)
CLK
CMD
WR
RD
CKE
Masked by CKE
Masked by CKE
Internal
CLK
DQ(CL2)
D0
D1
DQ(CL3)
D0
D1
D2
D3
D2
D3
Q0
Q1
Q2
Q0
Q1
Not Written
Q3
Q2
Q3
Suspended Dout
Note: CLK to CLK disable/enable=1 clock
2. DQM Operation
2) Read Mask (BL=4)
1) Write Mask (BL=4)
CLK
CMD
WR
RD
DQM
Masked by CKE
D0
DQ(CL2)
DQ(CL3)
D0
D1
D1
Masked by CKE
D3
Q0
Hi-Z
Hi-Z
D3
DQM to Data-in Mask = 0CLK
Q1
Q3
Q1
Q2
Q3
DQM to Data-out Mask = 2
2) Read Mask (BL=4)
CLK
CMD
RD
CKE
DQM
Q0
DQ(CL2)
Hi-Z
Hi-Z
DQ(CL3)
Q2
Q1
Hi-Z
Hi-Z
Q4
Q3
Hi-Z
Hi-Z
Q6
Q7
Q8
Q5
Q6
Q7
* Note : 1. DQM makes data out Hi-Z after 2 clocks which should masked by CKE “L”.
2. DQM masks both data-in and data-out.
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3. CAS Interrupt (I)
1) Read interrupted by Read (BL=4)Note 1
CLK
CMD
RD
ADD
A
RD
B
QA0
DQ(CL2)
DQ(CL3)
QB0
QB1 QB2
QB3
QA0
QB0
QB2
QB1
QB3
tCCD
Note2
2) Write interrupted by Write (BL =2)
3) Write interrupted by Read (BL =2)
CLK
CMD
WR
ADD
A
DQ
DA0
WR
tCCD
WR
tCCD
Note2
B
DB0
RD
A
DB1
tCDL
Note3
Note2
B
DQ(CL2)
DA0
DQ(CL3)
DA0
QB0
QB1
QB0
QB1
tCDL
Note3
Note : 1. By “Interrupt”, It is possible to stop burst read/write by external command before the end of burst.
By “ CAS Interrupt”, to stop burst read/write by CAS access; read, write and block write.
2. tCCD : CAS to CAS delay. (=1CLK)
3. tCDL : Last data in to new column address delay. (= 1CLK).
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4. CAS Interrupt (II) : Read Interrupted Write & DQM
(1) CL=2, BL=4
CLK
i) CMD
RD
WR
DQM
D0
DQ
ii) CMD
Hi-Z
DQ
D0
RD
iii) CMD
D2
D3
D1
D2
D3
D1
D2
D3
D1
D2
WR
RD
DQM
D1
WR
DQM
Hi-Z
D0
DQ
iv) CMD
RD
WR
DQM
Q0
DQ
Hi-Z
Note 1
D0
D3
(2) CL=3, BL=4
CLK
i) CMD
RD
WR
DQM
D0
DQ
ii) CMD
RD
D1
D2
D3
D1
D2
D3
D1
D2
D3
D1
D2
D3
D1
D2
WR
DQM
DQ
iii) CMD
D0
RD
WR
DQM
D0
WR
DQ
iv) CMD
RD
WR
DQM
Hi-Z
DQ
v) CMD
D0
RD
WR
DQM
Q0
DQ
Hi-Z
Note 2
D0
D3
* Note : 1. To prevent bus contention, there should be at least one gap between data in and data out.
2. To prevent bus contention, DQM should be issued which makes a least one gap between data in and data out.
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5. Write Interrupted by Precharge & DQM
CLK
CMD
Note 2
WR
PRE
Note 1
DQM
DQ
D0
D1
D2
D3
Masked by DQM
Note : 1. To inhibit invalid write, DQM should be issued.
2. This precharge command and burst write command should be of the same bank, otherwise it is not precharge
interrupt but only another bank precharge of dual banks operation.
6. Precharge
1) Normal Write (BL=4)
CLK
CMD
WR
DQ
D0
PRE
D1
D2
D3
tRDL
2) Read (BL=4)
CLK
CMD
RD
PRE
DQ(CL2)
Q0
DQ(CL3)
Q1
Q2
Q3
Q0
Q1
Q2
Q3
7. Auto Precharge
1) Normal Write (BL=4)
CLK
CMD
WR
DQ
D0
D1
D2
D3
Note 1
Auto Precharge Starts
2) Read (BL=4)
CLK
CMD
DQ(CL2)
RD
Q0
DQ(CL3)
Q1
Q2
Q3
Q0
Q1
Q2
Q3
Note 1
Auto Precharge Starts
* Note : 1. The row active command of the precharge bank can be issued after tRP from this point.
The new read/write command of other active bank can be issued from this point.
At burst read/write with auto precharge, CAS interrupt of the same/another bank is illegal.
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8. Burst Stop & Precharge Interrupt
2) Write Burst Stop (BL=8)
1) Write Interrupted by Precharge (BL=4)
CLK
CLK
CMD
WR
PRE
CMD
WR
D3
DQ
D0
STOP
DQM
DQ
D0
D1
D2
tRDL
D2
Note 1
tBDL (note 2)
3) Read Interrupted by Precharge (BL=4)
4) Read Burst Stop (BL=4)
CLK
CMD
D1
CLK
RD
PRE
Q0
DQ(CL2)
DQ(CL3)
CMD
Note 3
Q1
1
DQ(CL2)
Q0
Q1
MRS
ACT
2
DQ(CL3)
RD
STOP
Q0
Note 3
Q1
Q0
1
Q1
2
9. MRS
Mode Register Set
CLK
Note 4
CMD
PRE
tRP
1CLK
Note : 1. tRDL : 2CLK, Last Data in to Row Precharge.
2. tBDL : 1CLK, Last Data in to Burst Stop Delay.
3. Number of valid output data after Row precharge or burst stop : 1,2 for CAS latency=2,3 respectively.
4. PRE : Both banks precharge if necessary.
MRS can be issued only at all bank precharge state.
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10. Clock Suspend Exit & Power Down Exit
1) Clock Suspend (=Active Power Down) Exit
2) Power Down (=Precharge Power Down) Exit
CLK
CLK
CKE
Internal
CLK
CKE
tSS
tSS
Internal
CLK
Note 1
RD
CMD
Note 2
NOP
CMD
ACT
11. Auto Refresh & Self Refresh
Note 3
1) Auto Refresh
CKE
~
CLK
Note 4
Note 5
PRE
AR
CMD
~ ~
~
Internal
CLK
CMD
tRP
tRC
Note 6
~
2) Self Refresh
~
CLK
Note 4
PRE
SR
CMD
~
CMD
~
~
CKE
tRP
tRC
* Note : 1. Active power down : one or more bank active state.
2. Precharge power down : both bank precharge state.
3. The auto refresh is the same as CBR refresh of conventional DRAM.
No precharge commands are required after Auto Refresh command.
During tRC from auto refresh command, any other command can not be accepted.
4. Before executing auto/self refresh command, both banks must be idle state.
5. MRS, Bank Active, Auto/Self Refresh, Power Down Mode Entry.
6. During self refresh mode, refresh interval and refresh operation are performed internally.
After self refresh entry, self refresh mode is kept while CKE is LOW.
During self refresh mode, all inputs expect CKE will be don’t cared, and outputs will be in Hi-Z state.
During tRC from self refresh exit command, any other command can not be accepted.
Before/After self refresh mode, AUTO REFRESH commands must be issued every 15.6 μ s or less as both SELF
REFRESH and AUTO REFRESH utilize the row refresh counter.
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12. About Burst Type Control
Basic
MODE
Sequential counting
Random
MODE
Random column Access
tCCD = 1 CLK
Interleave counting
At MRS A3=”0”. See the BURST SEQUENCE TABE.(BL=4,8)
BL=1,2,4,8 and full page wrap around.
At MRS A3=” 1”. See the BURST SEQUENCE TABE.(BL=4,8)
BL=4,8 At BL=1,2 Interleave Counting = Sequential Counting
Every cycle Read/Write Command with random column address can realize
Random Column Access.
That is similar to Extended Data Out (EDO) Operation of convention DRAM.
13. About Burst Length Control
4
At MRS A2,1,0 = “000”.
At auto precharge, tRAS should not be violated.
At MRS A2,1,0 = “001”.
At auto precharge, tRAS should not be violated.
At MRS A2,1,0 = “010”
8
At MRS A2,1,0 = “011”.
1
Basic
MODE
Special
MODE
Interrupt
MODE
PRELIMINARY
2
At MRS A9=”1”.
Read burst = 1,2,4,8, full page/write Burst =1
At auto precharge of write, tRAS should not be violated.
Before the end of burst, Row precharge command of the same bank
RAS Interrupt
Stops read/write burst with Row precharge.
(Interrupted by Precharge) tRDL= 2 with DQM, valid DQ after burst stop is 1,2 for CL=2,3 respectively
During read/write burst with auto precharge, RAS interrupt cannot be issued.
Before the end of burst, new read/write stops read/write burst and starts new
read/write burst or block write.
CAS Interrupt
During read/write burst with auto precharge, CAS interrupt can not be issued.
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Power On Sequence & Auto Refresh
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
~
~
~ ~
1
~ ~
~
0
CLOCK
Ra
Ra
~
~
~
~
~
~
~
~
~
~
~
~
DQM
KEY
~
~
~
~
WE
KEY
~
~
~
~
~
~
~
~
~
~
~
~
~
~
~
~
~
~
~
~
~
~
~
~
~
~
~
~
A10/AP
~
~
BA
~
~
ADDR
~
~
CAS
~
~
RAS
~
~
CS
~
~
CKE
~
~
High-Z
DQ
tPR
Precharge
(All Banks)
~
~
High level is necessary
tRC
Auto Refresh
tRC
Auto Refresh
Normal
MRS
Extended
MRS
Row Active
(A-Bank)
: Don't care
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Single Bit Read-Write-Read Cycles (Same Page) @CAS Latency=3, Burst Length=1
tCH
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
CLOCK
tCL
tCC
High
CKE
tRAS
tRC
tSH
*Note 1
CS
tSS
tRCD
tRP
tSH
RAS
tSS
tCCD
tSH
CAS
tSS
tSH
ADDR
tSS
Ra
Ca
Cb
tSS
Cc
Rb
tSH
*Note 2,3
*Note 2
BA
BS
A10/AP
Ra
*Note 2,3
*Note 2,3
BS
BS
BS
*Note 3
*Note 3
*Note 3
*Note 4
*Note 2
BS
BS
*Note 4
Rb
tSH
WE
tSS
tSS
tSH
DQM
tRAC
tSH
tSAC
Qa
DQ
tSLZ
tOH
Row Active
Read
Db
Qc
tSS
tSHZ
Write
Read
Row Active
Precharge
: Don't care
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A43E06321
* Note : 1. All inputs can be don’t care when CS is high at the CLK high going edge.
2. Bank active & read/write are controlled by BA.
BA
Active & Read/Write
0
Bank A
1
Bank B
3. Enable and disable auto precharge function are controlled by A10/AP in read/write command.
A10/AP
0
1
BA
Operation
0
Disable auto precharge, leave bank A active at end of burst.
1
Disable auto precharge, leave bank B active at end of burst.
0
Enable auto precharge, precharge bank A at end of burst.
1
Enable auto precharge, precharge bank B at end of burst.
4. A10/AP and BA control bank precharge when precharge command is asserted.
PRELIMINARY
A10/AP
BA
Precharge
0
0
Bank A
0
1
Bank B
1
X
Both Bank
(July, 2005, Version 0.0)
23
AMIC Technology, Corp.
A43E06321
Read & Write Cycle at Same Bank @Burst Length=4
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
CLOCK
High
CKE
tRC
*Note 1
CS
tRCD
RAS
*Note 2
CAS
ADDR
Ra
Ca0
Rb
Cb0
BA
A10/AP
Ra
Rb
WE
DQM
tOH
DQ
(CL = 2)
Qa0
tRAC
*Note 3
Qa1
Qa2
tSAC
Qa3
Db0
Db1
*Note 4
tSHZ
Db2
Db3
tRDL
tOH
DQ
(CL = 3)
Qa0
tRAC
*Note 3
Row Active
(A-Bank)
Qa1
Qa3
tSHZ
tSAC
Read
(A-Bank)
Qa2
Precharge
(A-Bank)
Db0
Db1
*Note 4
Row Active
(A-Bank)
Db2
Db3
tRDL
Write
(A-Bank)
Precharge
(A-Bank)
: Don't care
*Note : 1. Minimum row cycle times is required to complete internal DRAM operation.
2. Row precharge can interrupt burst on any cycle. [CAS latency-1] valid output data available after Row
enters precharge. Last valid output will be Hi-Z after tSHZ from the clock.
3. Access time from Row address. tCC*(tRCD + CAS latency-1) + tSAC
4. Output will be Hi-Z after the end of burst. (1,2,4 & 8)
At Full page bit burst, burst is wrap-around.
PRELIMINARY
(July, 2005, Version 0.0)
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AMIC Technology, Corp.
A43E06321
Page Read & Write Cycle at Same Bank @Burst Length=4
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
CLOCK
High
CKE
CS
tRCD
RAS
*Note 2
CAS
ADDR
Ra
Ca0
Cb0
Cc0
Cd0
BA
A10/AP
Ra
tRDL
tCDL
WE
*Note 2
*Note1
*Note3
DQM
DQ
(CL=2)
Qa0
DQ
(CL=3)
Row Active
(A-Bank)
Read
(A-Bank)
Qa1
Qb0
Qb1
Dc0
Dc1
Dd0
Dd1
Qa0
Qa1
Qb0
Dc0
Dc1
Dd0
Dd1
Write
(A-Bank)
Read
(A-Bank)
Write
(A-Bank)
Precharge
(A-Bank)
: Don't care
*Note : 1. To write data before burst read ends, DQM should be asserted three cycle prior to write command to avoid bus
contention.
2. Row precharge will interrupt writing. Last data input, tRDL before Row precharge, will be written.
3. DQM should mask invalid input data on precharge command cycle when asserting precharge before end of burst. Input
data after Row precharge cycle will be masked internally.
PRELIMINARY
(July, 2005, Version 0.0)
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AMIC Technology, Corp.
A43E06321
Page Read Cycle at Different Bank @Burst Length = 4
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
CLOCK
CKE
High
*Note 1
CS
RAS
*Note 2
CAS
ADDR
RAa
CAa
RBb
CBb
CAc
CBd
CAe
BA
A10/AP
RAa
RBb
WE
DQM
DQ
(CL=2)
QAa0 QAa1 QAa2 QAa3 QBb0 QBb1 QBb2 QBb3 QAc0 QAc1 QBd0 QBd1 QAe0 QAe1
DQ
(CL=3)
QAa0 QAa1 QAa2 QAa3 QBb0 QBb1 QBb2 QBb3 QAc0 QAc1 QBd0 QBd1 QAe0 QAe1
Row Active
(A-Bank)
Row Active
(B-Bank)
Read
(A-Bank)
Read
(B-Bank)
Read
(B-Bank)
Read
(A-Bank)
Precharge
(A-Bank)
Read
(A-Bank)
: Don't care
* Note : 1. CS can be don’t care when RAS, CAS and
WE
are high at the clock high going edge.
2. To interrupt a burst read by row precharge, both the read ad the precharge banks must be the same.
PRELIMINARY
(July, 2005, Version 0.0)
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AMIC Technology, Corp.
A43E06321
Page Write Cycle at Different Bank @Burst Length=4
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
CLOCK
CKE
High
CS
RAS
*Note 2
CAS
ADDR
RAa
CAa
RBb
CBb
CAc
DBb0 DBb1 DBb2 DBb3
DAc0
CBd
BA
A10/AP
RAa
RBb
DAa0 DAa1
DQ
DAa2
DAa3
DAc1
DBd0 DBd1
tRDL
tCDL
WE
*Note 1
DQM
Row Active
(B-Bank)
Row Active with
(A-Bank)
Write
(B-Bank)
Precharge
(Both Banks)
Write
(A-Bank)
Write
(A-Bank)
Write
(B-Bank)
: Don't care
* Note:
1. To interrupt burst write by Row precharge, DQM should be asserted to mask invalid input data.
2. To interrupt burst write by Row precharge, both the write and precharge banks must be the same.
PRELIMINARY
(July, 2005, Version 0.0)
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AMIC Technology, Corp.
A43E06321
Read & Write Cycle at Different Bank @Burst Length=4
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
CLOCK
CKE
High
CS
RAS
CAS
ADDR
RAa
CAa
RBb
CBb
RAc
CAc
BA
A10/AP
RAa
RBb
RAc
tCDL
*Note 1
WE
DQM
DQ
(CL=2)
QAa0
DQ
(CL=3)
Row Active
(A-Bank)
QAa1 QAa2 QAa3
DBb0 DBb1 DBb2 DBb3
QAc0 QAc1 QAc2
QAa0 QAa1 QAa2 QAa3
DBb0 DBb1 DBb2 DBb3
QAc0 QAc1
Read
(A-Bank)
Precharge
(A-Bank)
Write
(B-Bank)
Row Active
(B-Bank)
Read
(A-Bank)
Row Active
(A-Bank)
: Don't care
* Note : tCDL should be met to complete write.
PRELIMINARY
(July, 2005, Version 0.0)
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AMIC Technology, Corp.
A43E06321
Read & Write Cycle with Auto Precharge I @Burst Length=4
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
CLOCK
CKE
High
CS
RAS
CAS
ADDR
RAa
RBb
RAa
RBb
CAa
CBb
BA
A10/AP
WE
DQM
DQ
(CL=2)
QAa0
DQ
(CL=3)
Row Active
(A-Bank)
Read with
Auto Precharge
(A-Bank)
QAa1
QAa2 QAa3
QAa0
QAa1 QAa2
Auto Precharge
Start Point
(A-Bank)
QAa3
DBb0
DBb1
DBb2
DBb3
DBb0
DBb1
DBb2
DBb3
Write with
Auto Precharge
(B-Bank)
Auto Precharge
Start Point
(B-Bank)
Row Active
(B-Bank)
: Don't care
*Note : tRCD should be controlled to meet minimum tRAS before internal precharge start.
(In the case of Burst Length=1 & 2, BRSW mode)
PRELIMINARY
(July, 2005, Version 0.0)
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AMIC Technology, Corp.
A43E06321
Read & Write Cycle with Auto Precharge II @Burst Length=4
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
CLOCK
CKE
High
CS
RAS
CAS
ADDR
Ra
Rb
Ra
Rb
Ca
Cb
Ra
Ca
BA
A10/AP
Ra
WE
DQM
Qa0
DQ
(CL=2)
DQ
(CL=3)
Row Active
(A-Bank)
Read with
Auto Pre
Charge
(A-Bank)
Qa1
Qb0
Qb1
Qb2
Qb3
Qa0
Qa1
Qb0
Qb1
Qb2
Read without
Auto Precharge
(B-Bank)
Auto Precharge
Strart Point
(A-Bank) *Note 1
Precharge
(B-Bank)
Qb3
Row Active
(A-Bank)
Da0
Da1
Da0
Da1
Write with
Auto Precharge
(A-Bank)
Row Active
(B-Bank)
: Don't care
* Note :
When Read(Write) command with auto precharge is issued at A-Bank after A and B Bank activation.
- if read(Write) command without auto precharge is issued at B-Bank before A Bank auto precharge starts, A Bank auto
precharge will start at B Bank read command input point.
- Any command can not be issued at A Bank during tRP after A Bank auto precharge starts.
PRELIMINARY
(July, 2005, Version 0.0)
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AMIC Technology, Corp.
A43E06321
Read & Write Cycle with Auto Precharge III @Burst Length=4
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
CLOCK
CKE
High
CS
RAS
CAS
ADDR
Ra
Ca
Rb
Cb
BA
A10/AP
Ra
Rb
WE
DQM
DQ
(CL=2)
Qa0
DQ
(CL=3)
Qa1
Qa2
Qa3
Qa0
Qa1
Qa2
Qb0
Qa3
Qb1
Qb2
Qb3
Qb0
Qb1
Db2
Db3
* Note 1
Row Active
(A-Bank)
Read with
Auto Preharge
(A-Bank)
Auto Precharge Read with
Start Point Auto Precharge
(B-Bank)
(A-Bank)
Row Active
(B-Bank)
Auto Precharge
Start Point
(B-Bank)
: Don't care
* Note : Any command to A-bank is not allowed in this period.
tRP is determined from at auto precharge start point
PRELIMINARY
(July, 2005, Version 0.0)
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AMIC Technology, Corp.
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Read Interrupted by Precharge Command & Read Burst Stop Cycle (@Burst Length = Full Page)
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
CLOCK
CKE
High
CS
RAS
CAS
ADDR
RAa
CAa
CAb
BA
* Note 1
A10/AP
* Note 1
RAa
WE
DQM
* Note 2
DQ
(CL=2)
QAa0 QAa1
DQ
(CL=3)
QAa0
1
1
QAa2 QAa3 QAa4
QAb0 QAb1 QAb2 QAb3 QAb4 QAb5
2
Row Active
(A-Bank)
Read
(A-Bank)
QAa1 QAa2 QAa3 QAa4
Burst Stop
2
QAb0 QAb1 QAb2 QAb3
Read
(A-Bank)
QAb4 QAb5
Precharge
(A-Bank)
: Don't care
* Note : 1. At full page mode, burst is wrap-around at the end of burst. So auto precharge is impossible.
2. About the valid DQ’s after burst stop, it is same as the case of RAS interrupt.
Both cases are illustrated above timing diagram. See the label 1,2 on them.
But at burst write, burst stop and RAS interrupt should be compared carefully.
Refer the timing diagram of “Full page write burst stop cycle”.
3. Burst stop is valid at every burst length.
PRELIMINARY
(July, 2005, Version 0.0)
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AMIC Technology, Corp.
A43E06321
Write Interrupted by Precharge Command & Write Burst Stop Cycle (@ Burst Length = Full Page)
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
CLOCK
CKE
High
CS
RAS
CAS
ADDR
RAa
CAa
CAb
BA
* Note 1
A10/AP
* Note 1
RAa
tRDL
tBDL
WE
* Note 3
DQM
* Note 2
DAa0
DQ
Row Active
(A-Bank)
DAa1
DAa2
Write
(A-Bank)
DAa3 DAa4
DAb0
Burst Stop
DAb1
DAb2
DAb3
DAb4
DAb5
Write
(A-Bank)
Precharge
(A-Bank)
: Don't care
* Note : 1. At full page mode, burst is wrap-around at the end of burst. So auto precharge is impossible.
2. Data-in at the cycle of burst stop command cannot be written into corresponding memory cell.
It is defined by AC parameter of tBDL(=1CLK).
3. Data-in at the cycle of interrupted by precharge cannot be written into the corresponding memory cell.
It is defined by AC parameter of tRDL(=2CLK).
DQM at write interrupted by precharge command is needed to ensure tRDL of 2CLK.
DQM should mask invalid input data on precharge command cycle when asserting precharge before end of burst.
Input data after Row precharge cycle will be masked internally.
4. Burst stop is valid only at every burst length.
PRELIMINARY
(July, 2005, Version 0.0)
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AMIC Technology, Corp.
A43E06321
Burst Read Single Bit Write Cycle @Burst Length=2, BRSW
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
CLOCK
CKE
High
CS
RAS
* Note 2
CAS
ADDR
RAa
CAa
RBb
RAc
CAb
CBc
CAd
BA
A10/AP
RBb
RAa
RAc
WE
DQM
DQ
(CL=2)
DAa0
DQ
(CL=3)
DAa0
Row Active
(A-Bank)
QAb0
QAb1
DBc0
QAb0 QAb1
DBc0
Row Active
(A-Bank)
Row Active
(B-Bank)
Write
(A-Bank)
QAd0
QAd1
QAd0
Read
(A-Bank)
QAd1
Precharge
(A-Bank)
Write with
Auto Precharge
(B-Bank)
Read with
Auto Precharge
(A-Bank)
: Don't care
* Note : 1. BRSW mode is enabled by setting A9 “High” at MRS (Mode Register Set).
At the BRSW Mode, the burst length at write is fixed to “1” regardless of programed burst length.
2. When BRSW write command with auto precharge is executed, keep it in mind that tRAS should not be violated.
Auto precharge is executed at the burst-end cycle, so in the case of BRSW write command,
The next cycle starts the precharge.
PRELIMINARY
(July, 2005, Version 0.0)
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AMIC Technology, Corp.
A43E06321
Clock Suspension & DQM Operation Cycle @CAS Latency = 2, Burst Length=4
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
CLOCK
CKE
CS
RAS
CAS
ADDR
Ra
Ca
Cc
Cb
BA
A10/AP
Ra
WE
* Note 1
DQM
Qa0
DQ
Qa1
Qa2
Qa3
tSHZ
Row Active
Read
Clock
Suspension
Qb0
Qb1
Dc0
Dc2
tSHZ
Read
Write
DQM
Read DQM
Write
Clock
Suspension
: Don't care
* Note : DQM needed to prevent bus contention.
PRELIMINARY
(July, 2005, Version 0.0)
35
AMIC Technology, Corp.
A43E06321
Active/Precharge Power Down Mode @CAS Lantency=2, Burst Length=4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
~
~
~
~
tSS
~
~
0
CLOCK
* Note 2
tSS
tSS
tSS
CKE
~
~
* Note 1
*Note 3
~
~
~
~
~
~
CS
~
~
~
~
~
~
~
~
~
~
~
~
~
~
~
~
~
~
~
~
Ra
~
~
ADDR
~
~
~
~
~
~
~
~
BA
~
~
~
~
Ra
~
~
A10/AP
Precharge
Power-down
Entry
~
~
~
~
~
~
~
~
~
~
~
~
~
~
DQ
~
~
DQM
~
~
~
~
WE
Ca
~
~
CAS
~
~
RAS
Precharge
Power-down
Exit
Row Active
Qa0
Read
Qa1
Qa2
Precharge
Active
Power-down
Exit
Active
Power-down
Entry
: Don't care
* Note : 1. All banks should be in idle state prior to entering precharge power down mode.
2. CKE should be set high at least “1CLK + tSS” prior to Row active command.
3. Cannot violate minimum refresh specification. (32ms)
PRELIMINARY
(July, 2005, Version 0.0)
36
AMIC Technology, Corp.
A43E06321
Self Refresh Entry & Exit Cycle
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
~
~
* Note 4
tSS
CKE
* Note 1
tRC min.
~
~
* Note 2
~
~
~
~
CLOCK
* Note 6
~
~
* Note 3
~
~
~
~
tSS
* Note 5
~
~
~
~
* Note 7
~
~
RAS
~
~
~
~
CS
~
~
~
~
~
~
~
~
CAS
~
~
~
~
~
~
~
~
ADDR
~
~
~
~
~
~
~
~
BA
~
~
~
~
~
~
~
~
A10/AP
~
~
~
~
~
~
~
~
WE
Hi-Z
~
~
~
~
DQ
~
~
~
~
~
~
~
~
DQM
* Note 7
Hi-Z
Self Refresh Exit
Self Refresh Entry
Auto Refresh
: Don't care
* Note : TO ENTER SELF REFRESH MODE
1. CS , RAS & CAS with CKE should be low at the same clock cycle.
2. After 1 clock cycle, all the inputs including the system clock can be don’t care except for CKE.
3. The device remains in self refresh mode as long as CKE stays “Low”.
(cf.) Once the device enters self refresh mode, minimum tRAS is required before exit from self refresh.
TO EXIT SELF REFRESH MODE
4. System clock restart and be stable before returning CKE high.
5. CS starts from high.
6. Minimum tRC is required after CKE going high to complete self refresh exit.
7. Before/After self refresh mode, AUTO REFRESH commands must be issued every 15.6μs or less as both SELF
REFRESH and AUTO REFRESH utilize the row refresh counter.
PRELIMINARY
(July, 2005, Version 0.0)
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AMIC Technology, Corp.
A43E06321
Mode Register Set Cycle
0
1
2
3
Auto Refresh Cycle
4
5
6
0
1
2
3
4
5
6
7
8
9
10
CKE
High
~
~
~
~
CLOCK
High
~
~
*Note 2
tRC
~
~
CS
~
~
~
~
RAS
~
~
* Note 1
~
~
CAS
~
~
* Note 3
Ra
~
~
Key
ADDR
~
~
~
~
WE
~
~
DQ
Hi-Z
Hi-Z
MRS
~
~
~
~
DQM
Auto Refresh
New Command
New
Command
: Don't care
* Both banks precharge should be completed before Mode Register Set cycle and auto refresh cycle.
MODE REGISTER SET CYCLE
* Note : 1. CS , RAS , CAS &
WE
activation at the same clock cycle with address key will set internal mode register.
2. Minimum 2 clock cycles should be met before new RAS activation.
3. Please refer to Mode Register Set table.
PRELIMINARY
(July, 2005, Version 0.0)
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AMIC Technology, Corp.
A43E06321
Deep Power Down Mode Entry
CLK
CKE
CS
WE
CAS
RAS
ADDR
DQM
DQ
input
DQ
output
High-Z
tRP
Precharge Command
Normal Mode
PRELIMINARY
(July, 2005, Version 0.0)
Deep Power Down Entry
Deep Power Down Mode
39
AMIC Technology, Corp.
A43E06321
CLK
CKE
~
~ ~
~~
~
~
~ ~
~~
~
Deep Power Down Mode Exit
RAS
CAS
WE
200 us
Deep Power
Down Exit
~
~ ~
~ ~
~ ~
~ ~
~ ~
~
~
~ ~
~ ~
~ ~
~ ~
~ ~
~
CS
tRP
All Banks
Precharge
tRC
Auto
Refresh
Auto
Refresh
Mode
Register
Set
Extended
Mode
Register Set
New
Command
Accepted
Here
The deep power down mode is exited by asserting CKE high. After the exit, the following sequence is needed to enter a new
command:
1. Maintain NOP input conditions for a minimum of 200µs
2. Issue precharge commands for all banks of the device
3. Issue eight or more auto-refresh commands
4. Issue a mode register set command to initialize the mode register
5. Issue an extended mode register set command to initialize the extended mode register
PRELIMINARY
(July, 2005, Version 0.0)
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AMIC Technology, Corp.
A43E06321
Function Truth Table (Table 1)
Current
State
IDLE
CS
RAS CAS
WE
BA
Address
Action
H
X
X
X
X
X
NOP
L
H
H
H
X
X
NOP
L
H
H
L
X
X
ILLEGAL
2
L
H
L
X
BA
CA, A10/AP ILLEGAL
2
L
L
H
H
BA
RA
Row Active; Latch Row Address
L
L
H
L
BA
PA
NOP
4
X
Auto Refresh or Self Refresh
5
Mode Register Access
5
L
L
L
H
L
L
L
L
X
H
X
X
X
X
X
NOP
OP Code
L
H
H
H
X
X
NOP
Row
L
H
H
L
X
X
ILLEGAL
Active
L
H
L
H
BA
CA,A10/AP Begin Read; Latch CA; Determine AP
L
H
L
L
BA
CA,A10/AP Begin Write; Latch CA; Determine AP
L
L
H
H
BA
RA
ILLEGAL
L
L
H
L
BA
PA
Precharge
Read
Write
Read with
Auto
Precharge
PRELIMINARY
Note
2
2
L
L
L
X
X
X
ILLEGAL
H
X
X
X
X
X
NOP(Continue Burst to End →Row Active)
L
H
H
H
X
X
NOP(Continue Burst to End →Row Active)
L
H
H
L
X
X
Term burst →Row Active
L
H
L
H
BA
L
H
L
L
BA
CA,AP
L
L
H
H
BA
CA,A10/AP Term burst; Begin Read; Latch CA; Determine AP
3
Term burst; Begin Write; Latch CA; Determine AP
3
RA
ILLEGAL
2
Term Burst; Precharge timing for Reads
3
L
L
H
L
BA
PA
L
L
L
X
X
X
ILLEGAL
H
X
X
X
X
X
NOP(Continue Burst to End→Row Active)
L
H
H
H
X
X
NOP(Continue Burst to End→Row Active)
L
H
H
L
X
X
ILLEGAL
L
H
L
H
BA
CA,A10/AP Term burst; Begin Read; Latch CA; Determine AP
3
L
H
L
L
BA
CA,A10/AP Term burst; Begin Read; Latch CA; Determine AP
3
L
L
H
H
BA
RA
L
L
H
L
BA
A10/AP
ILLEGAL
2
Term Burst; Precharge timing for Writes
3
L
L
L
X
X
X
ILLEGAL
H
X
X
X
X
X
NOP(Continue Burst to End→Precharge)
L
H
H
H
X
X
NOP(Continue Burst to End→Precharge)
L
H
H
L
X
X
ILLEGAL
L
H
L
H
BA
CA,A10/AP ILLEGAL
2
L
H
L
L
BA
CA,A10/AP ILLEGAL
2
L
L
H
X
BA
RA, PA
ILLEGAL
L
L
L
X
X
X
ILLEGAL
(July, 2005, Version 0.0)
41
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AMIC Technology, Corp.
A43E06321
Function Truth Table (Table 1, Continued)
Current
State
CS
RAS CAS
WE
BA
Address
Action
Note
H
X
X
X
X
X
NOP(Continue Burst to End→Precharge)
L
H
H
H
X
X
NOP(Continue Burst to End→Precharge)
Write with
L
H
H
L
X
X
ILLEGAL
Auto
L
H
L
H
BA
CA,A10/AP ILLEGAL
2
Precharge
L
H
L
L
BA
CA,A10/AP ILLEGAL
2
L
L
H
X
BA
Precharge
Row
Activating
Refreshing
RA, PA
ILLEGAL
L
L
L
X
X
X
ILLEGAL
H
X
X
X
X
X
2
NOP→Idle after tRP
L
H
H
H
X
X
NOP→Idle after tRP
L
H
H
L
X
X
ILLEGAL
L
H
L
X
BA
L
L
H
H
BA
RA
ILLEGAL
2
L
L
H
L
BA
PA
NOP→Idle after tRP
2
L
L
L
X
X
X
ILLEGAL
4
CA,A10/AP ILLEGAL
2
H
X
X
X
X
X
NOP→Row Active after tRCD
L
H
H
H
X
X
NOP→Row Active after tRCD
L
H
H
L
X
X
ILLEGAL
L
H
L
X
BA
L
L
H
H
BA
RA
ILLEGAL
2
L
L
H
L
BA
PA
ILLEGAL
2
L
L
L
X
X
X
ILLEGAL
2
CA,A10/AP ILLEGAL
H
X
X
X
X
X
NOP→Idle after tRC
L
H
H
X
X
X
NOP→Idle after tRC
L
H
L
X
X
X
ILLEGAL
L
L
H
X
X
X
ILLEGAL
L
L
L
X
X
X
ILLEGAL
Abbreviations
RA = Row Address
NOP = No Operation Command
BA = Bank Address
CA = Column Address
2
AP = Auto Precharge
PA = Precharge All
Note: 1. All entries assume that CKE was active (High) during the preceding clock cycle and the current clock cycle.
2. Illegal to bank in specified state : Function may be legal in the bank indicated by BA, depending on the state of that
bank.
3. Must satisfy bus contention, bus turn around, and/or write recovery requirements.
4. NOP to bank precharging or in idle state. May precharge bank indicated by BA (and PA).
5. Illegal if any banks is not idle.
PRELIMINARY
(July, 2005, Version 0.0)
42
AMIC Technology, Corp.
A43E06321
Function Truth Table for CKE (Table 2)
Current
State
Self
Refresh
Both
Bank
Precharge
Power
Down
All
Banks
Idle
Any State
Other than
Listed
Above
CKE
n-1
H
CKE
n
X
L
L
CS
RAS CAS
WE
Address
Action
Note
X
X
X
X
X
INVALID
H
H
X
X
X
X
Exit Self Refresh→ABI after tRC
6
H
L
H
H
H
X
Exit Self Refresh→ABI after tRC
6
L
H
L
H
H
L
X
ILLEGAL
L
H
L
H
L
X
X
ILLEGAL
L
H
L
L
X
X
X
ILLEGAL
L
L
X
X
X
X
X
NOP(Maintain Self Refresh)
H
X
X
X
X
X
X
INVALID
L
H
H
X
X
X
X
Exit Power Down→ABI
7
L
H
L
H
H
H
X
Exit Power Down→ABI
7
L
H
L
H
H
L
X
ILLEGAL
L
H
L
H
L
X
X
ILLEGAL
L
H
L
L
X
X
X
ILLEGAL
L
L
X
X
X
X
X
NOP(Maintain Power Down Mode)
H
H
X
X
X
X
X
Refer to Table 1
H
L
H
X
X
X
X
Enter Power Down
8
H
L
L
H
H
H
X
Enter Power Down
8
H
L
L
H
H
L
X
ILLEGAL
H
L
L
H
L
X
X
ILLEGAL
H
L
L
L
H
X
X
ILLEGAL
H
L
L
L
L
H
X
Enter Self Refresh
H
L
L
L
L
L
X
ILLEGAL
8
L
L
X
X
X
X
X
NOP
H
H
X
X
X
X
X
Refer to Operations in Table 1
H
L
X
X
X
X
X
Begin Clock Suspend next cycle
9
L
H
X
X
X
X
X
Exit Clock Suspend next cycle
9
L
L
X
X
X
X
X
Maintain clock Suspend
Abbreviations : ABI = All Banks Idle
Note: 6. After CKE’s low to high transition to exit self refresh mode. And a time of tRC(min) has to be elapse after CKE’s low to
high transition to issue a new command.
7. CKE low to high transition is asynchronous as if restarts internal clock.
A minimum setup time “tSS + one clock” must be satisfied before any command other than exit.
8. Power-down and self refresh can be entered only from the all banks idle state.
9. Must be a legal command.
PRELIMINARY
(July, 2005, Version 0.0)
43
AMIC Technology, Corp.
A43E06321
Ordering Information
Part No.
Min. Cycle Time
(ns)
Max. Clock Frequency
(MHz)
Access Time
Package
A43E06321G-75F
7.5
133
6 ns
90 ball Pb-Free CSP
A43E06321G-75UF
7.5
133
6 ns
90 ball Pb-Free CSP
A43E06321G-95F
9.5
105
7 ns
90 ball Pb-Free CSP
A43E06321G-95UF
9.5
105
7 ns
90 ball Pb-Free CSP
Note: -U is for industrial operating temperature range -40ºC to +85ºC.
PRELIMINARY
(July, 2005, Version 0.0)
44
AMIC Technology, Corp.
A43E06321
Package Information
unit: mm
90LD STF BGA (8 x 13mm) Outline Dimensions
-A-
aaa
D
D1
Pin #1
e
-B-
aaa
E1
E
R
P
N
M
L
K
J
H
G
F
E
D
C
B
A
1 2 3 4 5 67 8 9
See Detail B
See Detail A
eee M C A B
fff M C
CAVITY
// bbb C
A2
B
A
A
A1
c
b
-Cddd C
SOLDER BALL
1
2
SEATING PLANE
Detail B
Detail A
A
Dimensions in mm
Min
Nom
Max
1.40
A1
0.30
0.35
0.40
0.012
0.014
0.016
A2
0.84
0.89
0.94
0.033
0.035
0.037
c
0.32
0.36
0.40
0.013
0.014
0.016
D
7.90
8.00
8.10
0.311
0.315
0.319
0.516
Symbol
Dimensions in inches
Min
Nom
Max
0.055
E
12.90
13.00
13.10
0.508
0.512
D1
-
6.40
-
-
0.252
-
E1
-
11.20
-
-
0.441
-
e
-
0.80
-
-
0.031
-
b
0.40
0.45
0.50
0.016
0.018
0.020
aaa
0.10
bbb
0.10
0.004
0.004
ccc
0.12
0.005
ddd
0.15
0.006
eee
0.08
0.003
MD/ME
9/15
9/15
Notes:
1. PRIMARY DATUM C AND SEATING PLANE ARE DEFINED BY THE
SPHERICAL CROWNS OF THE SOLDER BALLS.
2. DIMENSION b IS MEASURED AT THE MAXIMUM SOLDER BALL
DIAMETER, PARALLEL TO PRIMARY DATUM C.
3. THERE SHALL BE A MINIMUM CLEARANCE OF 0.25mm BETWEEN
THE EDGE OF THE SOLDER BALL AND THE BODY EDGE.
4. REFERENCE DOCUMENT : JEDEC MO-205.
5. THE PATTERN OF PIN 1 FIDUCIAL IS FOR REFERENCE ONLY.
PRELIMINARY
(July, 2005, Version 0.0)
45
AMIC Technology, Corp.