AMIC A62S7316G-55S 128k x 16 bit low voltage cmos sram Datasheet

A62S7316 Series
Preliminary
128K X 16 BIT LOW VOLTAGE CMOS SRAM
Document Title
128K X 16 BIT LOW VOLTAGE CMOS SRAM
Revision History
Rev. No.
History
Issue Date
Remark
Preliminary
0.0
Initial issue
November 24, 1999
0.1
Modify VCCmax from 3.3V to 3.6V
December 20, 2000
0.2
Add 55ns grade spec. for VCC = 3.0V to 3.6V
March 23, 2001
PRELIMINARY
(March, 2001, Version 0.2)
AMIC Technology, Inc.
A62S7316 Series
Preliminary
128K X 16 BIT LOW VOLTAGE CMOS SRAM
Features
n Operating voltage: 2.7V to 3.6V
n Access times: 55ns (max.): for VCC = 3.0V to 3.6V
70ns (max.): for VCC = 2.7V to 3.6V
n Current:
A62S7316-S series:
Operating: 50mA (max.)
Standby: 10µA (max.)
A62S7316-SI series:
Operating: 50mA (max.)
Standby: 15µA (max.)
n Extended operating temperature range : -25°C to 85°C
for -SI series
n Full static operation, no clock or refreshing required
n All inputs and outputs are directly TTL-compatible
n Common I/O using three-state output
n Data retention voltage: 2V (min.)
n Available in 44-pin TSOP and 48-ball Mini BGA (6X8)
packages.
General Description
The chip enable input is provided for POWER-DOWN,
device enable. Two byte enable inputs and an output
enable input are included for easy interfacing.
Data retention is guaranteed at a power supply voltage
as low as 2V.
The A62S7316 is a low operating current 2,097,152-bit
static random access memory organized as 131,072
words by 16 bits and operates on low power supply
voltage from 2.7V to 3.6V. It is built using AMIC’s high
performance CMOS process.
Inputs and three-state outputs are TTL compatible and
allow for direct interfacing with common system bus
structures.
Pin Configuration
n Mini BGA (6X8) Top View
n TSOP (Type II)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
A62S7316V
A4
A3
A2
A1
A0
CE
I/O0
I/O1
I/O2
I/O3
VCC
GND
I/O4
I/O5
I/O6
I/O7
WE
A16
A15
A14
A13
A12
PRELIMINARY
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A5
A6
A7
OE
HB
LB
I/O15
I/O14
I/O13
I/O12
GND
VCC
I/O11
I/O10
I/O9
I/O8
NC
A8
A9
A10
A11
NC
(March, 2001, Version 0.2)
1
2
3
4
5
6
A
LB
OE
A0
A1
A2
NC
B
I/O8
HB
A3
A4
CS
I/O0
C
I/O9
I/O10
A5
A6
I/O1
I/O2
D
VSS
I/O11
NC
A7
I/O3
VCC
E
VCC
I/O12
NC
A16
I/O4
VSS
F
I/O14
I/O13
A14
A15
I/O5
I/O6
G
I/O15
NC
A12
A13
WE
I/O7
H
NC
A8
A9
A10
A11
NC
A62S7316G
1
AMIC Technology, Inc.
A62S7316 Series
Block Diagram
VCC
A0
GND
1024 X 2048
DECODER
MEMORY ARRAY
A15
A16
I/O0
I/O8
INPUT
COLUMN I/O
INPUT
DATA
CIRCUIT
DATA
CIRCUIT
I/O15
I/O7
CE
LB
HB
OE
WE
PRELIMINARY
CONTROL
CIRCUIT
(March, 2001, Version 0.2)
2
AMIC Technology, Inc.
A62S7316 Series
Pin Description - TSOP
Pin No.
Symbol
Description
1 - 5, 18 - 22,
24 - 27,42 - 44
A0 - A16
6
CE
Chip Enable Input
7 - 10, 13 - 16,
29 - 32, 35 - 38
I/O0 - I/O15
Data Input/Outputs
17
WE
Write Enable Input
39
LB
Byte Enable Input (I/O0 to I/O7)
40
HB
Byte Enable Input (I/O8 to I/O15)
41
OE
Output Enable Input
11, 33
VCC
Power
12, 34
GND
Ground
23, 28
NC
Address Inputs
No Connection
Recommended DC Operating Conditions
(TA = 0°C to + 70°C or -25°C to 85°C)
Symbol
Parameter
Min.
Typ.
Max.
Unit
2.7
3.0
3.6
V
0
0
0
V
VCC
Supply Voltage
GND
Ground
VIH
Input High Voltage
2.4
-
VCC + 0.3
V
VIL
Input Low Voltage
-0.3
-
+0.6
V
CL
Output Load
-
-
30
pF
TTL
Output Load
-
-
1
-
PRELIMINARY
(March, 2001, Version 0.2)
3
AMIC Technology, Inc.
A62S7316 Series
Absolute Maximum Ratings*
*Comments
VCC to GND . . . . . . . . . . . . . . . . . . . . . -0.5V to +4.6V
IN, IN/OUT Volt to GND . . . . . . . . -0.5V to VCC + 0.5V
Operating Temperature, Topr . . . . . . . . -25°C to +85°C
Storage Temperature, Tstg . . . . . . . . . -55°C to +125°C
Power Dissipation, PT . . . . . . . . . . . . . . . . . . . . . 0.7W
Soldering Temp. & Time . . . . . . . . . . . . 260°C, 10 sec
Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to this device.
These are stress ratings only. Functional operation of this
device at these or any other conditions above those
indicated in the operational sections of this specification
is not implied or intended. Exposure to the absolute
maximum rating conditions for extended periods may
affect device reliability.
DC Electrical Characteristics (TA = 0°C to + 70°C or -25°C to 85°C, VCC = 2.7V to 3.6V, GND = 0V)
Symbol
Parameter
A62S7316-55S/70S
A62S7316-55SI/70SI
Min.
Max.
Min.
Max.
Unit
Conditions
ILI
Input Leakage Current
-
1
-
1
µA
ILO
Output Leakage Current
-
1
-
1
µA
Active Power Supply Current
-
5
-
5
mA
CE = VIL, II/O = 0mA
-
50
-
50
mA
Min. Cycle, Duty = 100%
CE = VIL, II/O = 0mA
-
10
-
10
mA
CE = VIL, VIH = VCC,
VIL = 0V, f = 1MHz,
II/O = 0 mA
ICC
ICC1
Dynamic Operating
Current
ICC2
ISB
VIN = GND to VCC
CE = VIH or LB = VIH or
HB = VIH or OE = VIH or
WE = VIH
VI/O = GND to VCC
-
0.5
-
0.5
mA
CE = VIH
ISB1
Standby Power
Supply Current
-
10
-
15
µA
CE ≥ VCC - 0.2V
VIN ≥ 0V
VOL
Output Low Voltage
-
0.4
-
0.4
V
IOL = 2.1mA
VOH
Output High Voltage
2.2
-
2.2
-
V
IOH = -1.0mA
PRELIMINARY
(March, 2001, Version 0.2)
4
AMIC Technology, Inc.
A62S7316 Series
Truth Table
I/O0 to I/O7 Mode
I/O8 to I/O15 Mode
VCC Current
CE
OE
WE
LB
HB
H
X
X
X
X
Not selected
Not selected
ISB1, ISB
L
L
Read
Read
ICC1, ICC2, ICC
L
H
Read
High - Z
ICC1, ICC2, ICC
H
L
High - Z
Read
ICC1, ICC2, ICC
L
L
Write
Write
ICC1, ICC2, ICC
L
H
Write
Not Write/Hi - Z
ICC1, ICC2, ICC
H
L
Not Write/Hi - Z
Write
ICC1, ICC2, ICC
L
X
High - Z
High - Z
ICC1, ICC2, ICC
X
L
High - Z
High - Z
ICC1, ICC2, ICC
H
H
Not selected
L
L
L
L
X
H
X
X
H
L
H
X
Not selected
ISB1, ISB
Note: X = H or L
Capacitance (TA = 25°C, f = 1.0MHz)
Symbol
Parameter
Min.
Max.
Unit
Conditions
CIN*
Input Capacitance
-
6
pF
VIN = 0V
CI/O*
Input/Output Capacitance
-
8
pF
VI/O = 0V
* These parameters are sampled and not 100% tested.
PRELIMINARY
(March, 2001, Version 0.2)
5
AMIC Technology, Inc.
A62S7316 Series
AC Characteristics (TA = 0°C to +70°C or -25°C to 85°C, VCC = 2.7V to 3.6V)
Symbol
Parameter
A62S7316-55S/SI
A62S7316-70S/SI
(VCC = 3.0V to 3.6V)
(VCC = 2.7V to 3.6V)
Unit
Min.
Max.
Min.
Max.
55
-
70
-
ns
Read Cycle
tRC
Read Cycle Time
tAA
Address Access Time
-
55
-
70
ns
tACE
Chip Enable Access Time
-
55
-
70
ns
tBE
Byte Enable Access Time
-
55
-
70
ns
tOE
Output Enable to Output Valid
-
30
-
35
ns
tCLZ
Chip Enable to Output in Low Z
10
-
10
-
ns
tBLZ
Byte Enable to Output in Low Z
5
-
5
-
ns
tOLZ
Output Enable to Output in Low Z
5
-
5
-
ns
tCHZ
Chip Disable to Output in High Z
-
20
-
25
ns
tBHZ
Byte Disable to Output in High Z
-
20
-
25
ns
tOHZ
Output Disable to Output in High Z
-
20
-
25
ns
tOH
Output Hold from Address Change
5
-
10
-
ns
tWC
Write Cycle Time
55
-
70
-
ns
tCW
Chip Enable to End of Write
50
-
60
-
ns
tBW
Byte Enable to End of Write
50
-
60
-
ns
tAS
Address Setup Time
0
-
0
-
ns
tAW
Address Valid to End of Write
50
-
60
-
ns
tWP
Write Pulse Width
40
-
50
-
ns
tWR
Write Recovery Time
0
-
0
-
ns
tWHZ
Write to Output in High Z
-
25
-
30
ns
tDW
Data to Write Time Overlap
25
-
30
-
ns
tDH
Data Hold from Write Time
0
-
0
-
ns
tOW
Output Active from End of Write
5
-
5
-
ns
Write Cycle
Note: tCHZ, tBHZ and tOHZ and tWHZ are defined as the time at which the outputs achieve the open circuit condition and are
not referred to output voltage levels.
PRELIMINARY
(March, 2001, Version 0.2)
6
AMIC Technology, Inc.
A62S7316 Series
Timing Waveforms
(1, 2, 4)
Read Cycle 1
tRC
Address
tAA
tOH
tOH
DOUT
(1, 2, 3)
Read Cycle 2
tRC
Address
tAA
CE
tACE
tCHZ 5
tCLZ 5
tBE
HB, LB
tBLZ 5
tBHZ 5
OE
tOHZ 5
tOE
tOLZ 5
DOUT
Notes:
1. WE is high for Read Cycle.
2. Device is continuously enabled CE = VIL, HB = VIL and, or LB = VIL.
3. Address valid prior to or coincident with CE and ( HB and, or LB ) transition low.
4. OE = VIL.
5. Transition is measured ±500mV from steady state. This parameter is sampled and not 100% tested.
PRELIMINARY
(March, 2001, Version 0.2)
7
AMIC Technology, Inc.
A62S7316 Series
Timing Waveforms (continued)
Write Cycle 1
(Write Enable Controlled)
tWC
Address
tWR3
tAW
tCW
CE
tBW
HB, LB
tAS1
tWP2
WE
tDW
tDH
DATA IN
tWHZ 4
tOW
DATA OUT
PRELIMINARY
(March, 2001, Version 0.2)
8
AMIC Technology, Inc.
A62S7316 Series
Timing Waveforms (continued)
Write Cycle 2
(Chip Enable Controlled)
tWC
Address
tAW
tAS1
tWR3
tCW2
CE
tBW
HB, LB
tWP
WE
tDW
tDH
DATA IN
tWHZ 4
tOW
DATA OUT
PRELIMINARY
(March, 2001, Version 0.2)
9
AMIC Technology, Inc.
A62S7316 Series
Timing Waveforms (continued)
Write Cycle 3
(Byte Enable Controlled)
tWC
Address
tAW
tCW
CE
tAS1
tWR3
tBW2
HB, LB
tWP
WE
tDH
tDW
DATA IN
tWHZ 4
tOW
DATA OUT
Notes: 1. tAS is measured from the address valid to the beginning of Write.
2. A Write occurs during the overlap (tWP, tBW) of a low CE , WE and ( HB and, or LB ).
3. tWR is measured from the earliest of CE or WE or ( HB and, or LB ) going high to the end of the Write cycle.
4. OE level is high or low.
5. Transition is measured ±500mV from steady state. This parameter is sampled and not 100% tested.
PRELIMINARY
(March, 2001, Version 0.2)
10
AMIC Technology, Inc.
A62S7316 Series
AC Test Conditions
Input Pulse Levels
0V to 3.0V
Input Rise And Fall Time
5 ns
Input and Output Timing Reference Levels
1.5V
Output Load
See Figures 1 and 2
TTL
TTL
CL
CL
5pF
30pF
* Including scope and jig.
* Including scope and jig.
Figure 1. Output Load
Figure 2. Output Load for tCLZ, tOLZ,
tCHZ, tOHZ, tWHZ, and tOW
Data Retention Characteristics (TA = 0°C to 70°C or -25°C to 85°C)
Symbol
Parameter
VDR
VCC for Data Retention
ICCDR
Data Retention Current
S-Version
SI-Version
tCDR
tR
Chip Disable to Data Retention Time
Operation Recovery Time
* A62S7316-55S/70S
** A62S7316-55SI/70SI
PRELIMINARY
ICCDR: max.
ICCDR: max.
(March, 2001, Version 0.2)
Min.
Max.
Unit
2.0
3.6
V
CE ≥ VCC - 0.2V
-
5*
µA
VCC = 2.0V,
CE ≥ VCC - 0.2V
VIN ≥ 0V
-
10**
0
-
ns
TRC
-
ns
Conditions
See Retention Waveform
1µA at TA = 0°C to + 40°C
1µA at TA = 0°C to + 40°C
11
AMIC Technology, Inc.
A62S7316 Series
Low VCC Data Retention Waveform
DATA RETENTION MODE
VCC
2.7V
2.7V
tCDR
tR
VDR ≥ 2V
VIH
CE
VIH
CE ≥ VDR - 0.2V
Ordering Information
Operating Current
Max. (mA)
Standby Current
Max. (µ
µA)
Package
50
10
44L TSOP
50
15
44L TSOP
A62S7316G-55S
50
10
48B Mini BGA
A62S7316G-55SI
50
15
48B Mini BGA
A62S7316V-70S
50
10
44L TSOP
50
15
44L TSOP
A62S7316G-70S
50
10
48B Mini BGA
A62S7316G-70SI
50
15
48B Mini BGA
Part No.
Access Time (ns)
A62S7316V-55S
A62S7316V-55SI
55
A62S7316V-70SI
70
PRELIMINARY
(March, 2001, Version 0.2)
12
AMIC Technology, Inc.
A62S7316 Series
Package Information
TSOP 44L (Type II) Outline Dimensions
unit: inches/mm
E
E1
44
θ
L
L1
1
L
A2
A1
e
D
b
A
c
D
ZD
L1
y
Dimensions in inches
Dimensions in mm
Symbol
Min
Nom
Max
Min
Nom
Max
A
-
-
0.047
-
-
1.20
A1
0.002
-
0.006
0.05
-
0.15
A2
0.037
0.039
0.041
0.95
1.00
1.05
b
0.012
-
0.018
0.30
-
0.45
c
0.005
-
0.008
0.12
-
0.21
D
0.720
0.725
0.730
18.28
18.41
18.54
ZD
E
0.032 REF
0.805 REF
0.455
0.463
0.471
11.56
11.76
11.96
E1
0.395
0.400
0.405
10.03
10.16
10.29
L
0.019
0.023
0.027
0.49
0.59
0.69
L1
0.031 REF
0.80 REF
0.031 BSC
e
0.80 BSC
y
-
-
0.004
-
-
0.10
θ
0°
-
5°
0°
-
5°
Notes:
1. The maximum value of dimension D includes end flash.
2. Dimension E1 does not include resin fins.
3. Dimension ZD includes end flash.
PRELIMINARY
(March, 2001, Version 0.2)
13
AMIC Technology, Inc.
A62S7316 Series
Package Information
Mini BGA 6X8 (48 BALLS) Outline Dimensions
unit : millimeter(mm)
Bottom View
Top View
Pin A1 Index
Pin A1 Index
6 5 4
3 2 1
C
C1
A
B
C
D
A
E
F
G
H
A
B
Diameter D
Solder Ball
B1
D
E2
0.10
E1
E
PRELIMINARY
Symbol
Min
Typ
Max
A
-
0.75
-
B
5.90
6.00
6.10
B1
-
3.75
-
C
7.90
8.00
8.10
C1
-
5.25
-
D
0.30
0.35
0.40
E
1.00
1.10
1.20
E1
-
0.36
-
E2
-
0.22
-
(March, 2001, Version 0.2)
14
AMIC Technology, Inc.
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