AAT8307 20V P-Channel Power MOSFET General Description Features The AAT8307 is a low threshold P Channel MOSFET designed for the battery, cell phone, and PDA markets. Using AnalogicTech™'s proprietary ultrahigh density Trench technology, and space saving small outline J-lead package, performance superior to that normally found in a larger footprint has been squeezed into the area of a TSOP6 package. • • • VDS(MAX) = -20V ID(MAX) 1 = -6.0A @ 25°C Low RDS(ON): • 35 mΩ @ VGS = -4.5V • 60 mΩ @ VGS = -2.5V Applications • • • • Top View Battery Packs Cellular & Cordless Telephones Battery-powered portable equipment Load Switches Absolute Maximum Ratings Symbol VDS VGS D D D D 8 7 6 5 1 S 2 S 3 S 4 G (TA=25°C unless otherwise noted) Description Value Drain-Source Voltage Gate-Source Voltage ID Continuous Drain Current @ TJ=150°C IDM IS Pulsed Drain Current 2 Continuous Source Current (Source-Drain Diode) PD Maximum Power Dissipation TJ, TSTG Preliminary Information TSOPJW-8 Package °C Typ Max Units 90 48 31 110 59 37 °C/W °C/W °C/W TA = 25°C TA = 70°C 1 1 TA = 25°C TA = 70°C 1 Units -20 ±12 ±6.0 ±4.8 ±32 -1.9 2.1 1.3 -55 to 150 Operating Junction and Storage Temperature Range V A W Thermal Characteristics Symbol RθJA RθJA2 RθJF 8307.2003.06.0.62 Description Junction-to-Ambient steady state Junction-to-Ambient t<5 seconds Junction-to-Foot 1 1 1 1 AAT8307 20V P-Channel Power MOSFET Electrical Characteristics Symbol Description (TJ=25°C unless otherwise noted) Conditions DC Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250µA VGS=-4.5V, ID=-6.0A RDS(ON) Drain-Source ON-Resistance 2 VGS=-2.5V, ID=-4.6A ID(ON) On-State Drain Current 2 VGS=-4.5V, VDS=-5V (Pulsed) VGS(th) Gate Threshold Voltage VGS=VDS, ID=-250µA IGSS Gate-Body Leakage Current VGS=±12V, VDS=0V VGS=0V, VDS=-20V IDSS Drain Source Leakage Current VGS=0V, VDS=-16V, TJ=70°C 3 gfs Forward Transconductance 2 VDS=-5V, ID=-6.0A Dynamic Characteristics 3 QG Total Gate Charge VDS=-15V, RD=2.5Ω, VGS=-4.5V QGS Gate-Source Charge VDS=-15V, RD=2.5Ω, VGS=-4.5V QGD Gate-Drain Charge VDS=-15V, RD=2.5Ω, VGS=-4.5V tD(ON) Turn-ON Delay VDD=-15V, VGS=-4.5V, RD=2.5Ω, tR Turn-ON Rise Time VDD=-15V, VGS=-4.5V, RD=2.5Ω, tD(OFF) Turn-OFF Delay VDD=-15V, VGS=-4.5V, RD=2.5Ω, tF Turn-OFF Fall Time VDD=-15V, VGS=-4.5V, RD=2.5Ω, Source-Drain Diode Characteristics VSD Source-Drain Forward Voltage 2 VGS=0, IS=-6.0A IS Continuous Diode Current 1 Min Typ Max 27 46 35 60 -20 V -32 -0.6 ±100 -1 -5 12 RG=6Ω RG=6Ω RG=6Ω RG=6Ω Units mΩ A V nA µA S 14 2.3 5.5 10 37 36 52 nC ns -1.2 -1.9 V A Note 1: Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 5 second pulse on a 1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. RθJF + RθFA = RθJA where the foot thermal reference is defined as the normal solder mounting surface of the device's leads. RθJF is guaranteed by design, however RθCA is determined by the PCB design. Actual maximum continuous current is limited by the application's design. Note 2: Pulse test: Pulse Width = 300 µs Note 3: Guaranteed by design. Not subject to production testing. 2 8307.2003.06.0.62 AAT8307 20V P-Channel Power MOSFET Typical Characteristics (TJ = 25ºC unless otherwise noted) Output Characteristics 32 5V 4.5V Transfer Characteristics 32 4V VD=VG 25°C 3.5V 24 125°C -55°C 24 ID (A) IDS (A) 3V 16 2.5V 2V 8 16 8 1.5V 0 0 0 0 1 2 3 1 2 4 On-Resistance vs. Drain Current 5 On-Resistance vs. Gate to Source Voltage 120 60 ID = 6.5A VGS = 2.5 V 50 100 40 RDS(ON) (mΩ) RDS(ON) (mΩ) 4 VGS (V) VDS (V) 30 VGS = 4.5 V 20 80 60 40 20 10 0 0 0 2 4 6 8 10 0 12 1 2 On-Resistance vs. Junction Temperature 4 5 Threshold Voltage 1.4 0.5 VGS = 4.5V ID = 6.5A 0.4 VGS(th) Variance (V) 1.3 3 VGS (V) ID (A) Normalized RDS(ON) 3 1.2 1.1 1.0 0.9 0.8 ID = 250µA 0.3 0.2 0.1 0 -0.1 -0.2 0.7 -0.3 -50 0.6 -50 -25 0 25 50 TJ (°C) 8307.2003.06.0.62 75 100 125 150 -25 0 25 50 75 100 125 150 TJ (°C) 3 AAT8307 20V P-Channel Power MOSFET Typical Characteristics (TJ = 25ºC unless otherwise noted) Gate Charge 5 100 VD=15V ID=6.5A 4 TJ = 150°C 10 3 IS (A) VGS (V) Source-Drain Diode Forward Voltage 2 TJ = 25°C 1 1 0 0 3 6 9 12 0.1 15 0 0.2 0.4 QG, Charge (nC) Capacitance 0.8 1 1.2 Single Pulse Power, Junction to Ambient 60 2000 50 1600 Power (W) Capacitance (pF) 0.6 VSD (V) Ciss 1200 800 Coss 40 30 20 10 400 Crss 0 0.001 0 0 5 10 15 0.1 10 1000 20 Time (s) VDS (V) Normalized Effective Transient Thermal Impedance Transient Thermal Response, Junction to Ambient 10 1 .5 0.1 .2 .1 .02 .01 0.01 0.0001 Single Pulse 0.001 0.01 0.1 1 10 100 1000 Time (s) 4 8307.2003.06.0.62 AAT8307 20V P-Channel Power MOSFET Ordering Information Package Marking1 Part Number (Tape and Reel) TSOPJW-8 ICXYY AAT8307ITS-T1 Note: Sample stock is generally held on all part numbers listed in BOLD. Note 1: XYY = assembly and date code. Package Information TSOPJW-8 2.40 ± 0.10 2.85 ± 0.20 0.325 ± 0.075 0.65 BSC 0.65 BSC 0.65 BSC 7° 0.055 ± 0.045 0.04 REF 0.15 ± 0.05 1.0175 ± 0.0925 0.9625 ± 0.0375 3.025 ± 0.075 0.010 0.45 ± 0.15 2.75 ± 0.25 All dimensions in millimeters. 8307.2003.06.0.62 5 AAT8307 20V P-Channel Power MOSFET AnalogicTech cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in an AnalogicTech product. No circuit patent licenses, copyrights, mask work rights, or other intellectual property rights are implied. AnalogicTech reserves the right to make changes to their products or specifications or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information to verify, before placing orders, that information being relied on is current and complete. All products are sold subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those pertaining to warranty, patent infringement, and limitation of liability. AnalogicTech warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with AnalogicTech’s standard warranty. Testing and other quality control techniques are utilized to the extent AnalogicTech deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed. Advanced Analogic Technologies, Inc. 830 E. Arques Avenue, Sunnyvale, CA 94085 Phone (408) 737-4600 Fax (408) 737-4611 6 8307.2003.06.0.62