EIC ABR5000 Avalanche bridge rectifier Datasheet

ABR5000 - ABR5010
AVALANCHE BRIDGE
RECTIFIERS
PRV : 50 - 1000 Volts
Io : 50 Amperes
BR50
0.728(18.50)
0.688(17.40)
FEATURES :
*
*
*
*
*
*
High case dielectric strength
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
Pb / RoHS Free
0.685(16.70) 1.130(28.70)
0.618(15.70) 1.120(28.40)
0.570(14.50)
0.530(13.40)
0.210(5.30)
0.200(5.10)
0.658(16.70)
0.618(15.70)
0.032(0.81)
0.028(0.71)
MECHANICAL DATA :
* Case : Molded plastic with heatsink integrally
mounted in the bridge encapsulation
* Epoxy : UL94V-O rate flame retardant
* Terminals : plated .25" (6.35 mm). Faston
* Polarity : Polarity symbols marked on case
* Mounting position : Bolt down on heat-sink with
silicone thermal compound between bridge
and mounting surface for maximum heat
transfer efficiency.
* Weight : 17.1 grams
0.252(6.40)
0.248(6.30)
φ 0.100(2.50)
0.090(2.30)
0.905(23.0)
0.826(21.0)
0.310(7.87)
0.280(7.11)
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Maximum Recurrent Peak Reverse Voltage
VRRM
ABR
5000
50
Maximum RMS Voltage
VRMS
35
RATING
SYMBOL
ABR
5001
100
ABR
5002
200
ABR
5004
400
ABR
5006
600
ABR
5008
800
ABR
5010
1000
70
140
280
420
560
700
UNIT
V
V
VDC
50
100
200
400
600
800
1000
V
Minimum Avalanche Breakdown Voltage at 100 µA
VBO(min.)
100
150
250
450
700
900
1100
V
Maximum Avalanche Breakdown Voltage at 100 µA
VBO(max.)
550
600
700
900
1150
1350
1550
V
Maximum DC Blocking Voltage
Maximum Average Forward Current Tc = 50°C
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Rating for fusing at ( t < 8.3 ms. )
Maximum Forward Voltage per Diode at IF = 25 A
Maximum DC Reverse Current
Ta = 25 °C
at Rated DC Blocking Voltage
Ta = 100 °C
Typical Thermal Resistance (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
Note :
Page 1 of 2
IF(AV)
50
A
IFSM
400
A
It
VF
2
660
A 2S
1.1
V
IR
10
µA
IR(H)
200
µA
RθJC
1
°C/W
TJ
- 50 to + 150
°C
TSTG
- 50 to + 150
°C
1 ) Thermal resistance from junction to case with units mounted on heatsink.
Rev. 02 : March 24, 2005
RATING AND CHARACTERISTIC CURVES ( ABR5000 - ABR5010)
FIG.1 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
500
PEAK FORWARD SURGE
CURRENT, AMPERES
AVERAGE FORWARD OUTPUT
CURRENT, AMPERES
50
40
30
20
10
0
0
25
50
75
100
125
150
300
200
100
0
175
8.3 ms SINGLE SINE WAVE
JEDEC METHOD
400
1
CASE TEMPERATURE, ( °C)
2
4
6
10
20
40
60
100
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
PER DIODE
10
TJ = 100 °C
REVERSE CURRENT,
MICROAMPERES
FORWARD CURRENT, AMPERES
100
TJ = 25 °C
10
1.0
Pulse Width = 300 µs
1% Duty Cycle
1.0
0.1
TJ = 25 °C
0.01
0.1
0
20
40
60
80
100
120
140
PERCENT OF RATED REVERSE
VOLTAGE, (%)
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
FORWARD VOLTAGE, VOLTS
Page 2 of 2
Rev. 02 : March 24, 2005
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