NEC AC10DSMA 10 a resin insulation type triac Datasheet

DATA SHEET
THYRISTORS
AC10DSMA,AC10FSMA
10 A RESIN INSULATION TYPE TRIAC
DESCRIPTION
PACKAGE DRAWING (Unit: mm)
The AC10DSMA and AC10FSMA are resin insulation type
4.7 MAX.
10.5 MAX.
TRIACs with an effective current of 10 A (TC = 85°C).
7 ±0.2
φ 3.2 ±0.2
2.8 ±0.2
1
These products features ratings and electrical characteristics
2 3
5 ±0.2
equal to TO-220AB package TRIAC and a high reliability design.
FEATURES
• Insulation type TRIAC fully covered with resin on the entire
case other than electrode leads
• Insulation voltage and conduction equal to conventional mica
12 ±0.2
mounting.
0.8 ±0.1
1.3 ±0.2
1.5 ±0.2
2.54 TYP.
2.54 TYP.
and polyester film
0.5 ±0.1
2.5 ±0.1
TRIAC
1: T1
2: T2
3: Gate
• Can be replaced with TO-220AB package
• High allowable on-current when using a single unit
*: TC test bench-mark
APPLICATIONS
*
13.5 MIN.
mounting on a heatsink board or performing high-density
17 ±0.2
and are electrically insulated with electrodes, giving them a
considerable advantage over conventional TRIACs when
3.0 MAX.
5 ±0.1
These products are covered with resin mold on the entire case
Standard weight: 2 g
Non-contact switches of motor speed control, heater temperature control, lamp light control
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D13661EJ4V0DS00 (4th edition)
Date Published June 2004 NS CP(K)
Printed in Japan
The mark
shows major revised points.
2002
AC10DSMA,AC10FSMA
MAXIMUM RATINGS
Parameter
Symbol
AC10DSMA
AC10FSMA
Unit
Remarks
Non-repetitive Peak Off-state Voltage
VDSM
500
700
V
−
Repetitive Peak Off-state Voltage
VDRM
400
600
V
−
Effective On-state Current
IT(RMS)
10 (TC = 85°C)
A
Refer to Figure 11 and 12.
ITSM
80 (50 Hz 1 cycle)
A
Refer to Figure 2.
Surge On-state Current
88 (60 Hz 1 cycle)
Fusing Current
∫ iT2dt
28 (1 ms ≤ t ≤ 10 ms)
As
2
−
Critical Rate Rise of On-state Current
dIT/dt
50
A/µs
−
PGM
5.0 (f ≥ 50 Hz, Duty ≤ 10%)
W
−
PG(AV)
0.5
W
−
Peak Gate Current
IGM
±3 (f ≥ 50 Hz, Duty ≤ 10%)
A
−
Junction Temperature
Tj
−40~+125
°C
−
Storage Temperature
Tstg
−55~+150
°C
−
Peak Gate Power Dissipation
Average Gate Power Dissipation
ELECTRICAL CHARACTERISTICS (Tj = 25°C)
Parameter
Symbol
Repetitive Peak Off-state Current
On-state Voltage
IDRM
VTM
Gate Trigger Current
TYP.
MAX.
Unit
Remarks
Tj = 25°C
−
−
100
µA
−
Tj = 125°C
−
−
2
mA
−
−
−
1.3
V
Refer to Figure 1.
mA
Refer to Figure 4.
V
Refer to Figure 4.
ITM = 10 A
T2+, G+
−
−
20
RL = 30 Ω
T2−, G+
−
−
−
III
T2−, G−
−
−
20
IV
T2+, G−
−
−
20
VDM = 12 V,
T2+, G+
−
−
1.5
RL = 30 Ω
T2−, G+
−
−
−
III
T2−, G−
−
−
1.5
IV
T2+, G−
−
−
1.5
0.3
−
−
V
−
−
30
−
mA
−
−
100
−
V/µs
−
10
−
−
V/µs
−
−
−
3.5
IGT
Mode I
VGT
II
Gate Non-trigger Voltage
Holding Current
VGD
IH
Critical Rate Rise of Off-state Voltage
Commutating Critical Rate Rise of
dv/dt
Tj = 125°C, VDM
= 1 VDRM
2
VDM = 24 V, ITM = 10 A
Tj = 125°C, VDM
2
= 3 VDRM
(dv/dt)c Tj = 125°C,
(diT/dt)c = −5 A/ms, VD = 400 V
Off-state Voltage
Thermal Resistance
VDM = VDRM
MIN.
VDM = 12 V,
Mode I
II
Gate Trigger Voltage
Conditions
Note
Rth(j-c)
Junction-to-case AC
°C/W Refer to Figure 13.
Note The thermal resistance with a 50 Hz or 60 Hz sine wave current, as shown in the following expression:
Rth(j-c) =
Tj (max) − TC
PT ( AV )
Tj(max): Maximum junction temperature
TC: Case temperature
PT(AV): Average on-dissipation
2
Data Sheet D13661EJ4V0DS
AC10DSMA,AC10FSMA
TYPICAL CHARACTERISTICS
Figure 1. iT vs. νT CHARACTERISTIC
100
Figure 2. ITSM RATING
MAX.
ITSM - Surge On-state Current - A
iT - On-state Current - A
Initial Tj = 125˚C
140
50
10
TC = 125˚C
5
25˚C
1.0
0.5
0.1
ITSM
0
120
100
80
60 Hz
60
50 Hz
40
20
0
0
1
2
3
4
5
1
5
νT - On-state Voltage - V
Figure 3. GATE RATING
VGT - Gate Trigger Voltage - V
VG - Gate Voltage - V
8
6
PGM = 5 W
f ≥ 50 Hz
Duty ≤ 10%
4
PG(AV) = 0.5 W
0
0.5
1.0
1.5
2.0
2.5
1.5
25˚C
−40˚C
125˚C
1.0
0.5
0
3.0
0
10
40
10
Mode
I, III, IV
1.4
VGT - Gate Trigger Voltage - V
IGT - Gate Trigger Current - mA
100
1.2
1.0
0.8
0.6
0.4
0.2
1
0
80
30
Figure 6. VGT vs. TA CHARACTERISTIC
Mode
I, III, IV
40
20
IGT - Gate Trigger Current - mA
Figure 5. IGT vs. TA CHARACTERISTIC
1000
0
100
Mode
I, III, IV
IG - Gate Current - A
−40
50
Figure 4. GATE CHARACTERISTIC
2.0
Tj = −40 to +125˚C
0
10
Cycles - N
10
2
2π
π
N=1
120
TA - Ambient Temperature - °C
−40
0
40
80
120
TA - Ambient Temperature - °C
Data Sheet D13661EJ4V0DS
3
AC10DSMA,AC10FSMA
Figure 7. iGT vs. τ CHARACTERISTIC
Figure 8. νGT vs. τ CHARACTERISTIC
5
Mode
I, III, IV
TA = 25˚C
1000
100
10
νGT - Gate Trigger Voltage - V
iGT - Gate Trigger Current - mA
10000
1
Mode
I, III, IV
TA = 25˚C
4
3
2
1
0
1
10
100
1000
1
10
τ - Pulse Width - µs
Figure 10. PT(AV) vs. IT(RMS) CHARACTERISTIC
IH - Holding Current - mA
100
10
0
20
40
60
80
100
120
TA - Ambient Temperature - °C
PT(AV) - On-state Average Power Dissipation - W
Figure 9. IH vs. TA CHARACTERISTIC
−20
12
11
10
9
8
7
6
5
4
3
2
1
0
0
2
3
4
5
6
7
8
9
10 11 12
Figure 12. TA vs. IT(RMS) RATING
140
140
TA - Ambient Temperature - °C
TC - Case Temperature - °C
1
IT(RMS) - Effective On-state Current - A
Figure 11. TC vs. IT(RMS) RATING
120
100
80
60
40
20
120
100
80
60
40
20
0
0
0
1
2
3
4
5
6
7
8
9
10 11 12
IT(RMS) - Effective On-state Current - A
4
1000
τ - Pulse Width - µs
1000
1
100
0
1.0
2.0
IT(RMS) - Effective On-state Current - A
Data Sheet D13661EJ4V0DS
AC10DSMA,AC10FSMA
Figure 13. Zth CHARACTERISTIC
Zth - Transient Thermal Impedance - °C/W
100
Junction to ambient
10
Junction to case
1
0.1
0.1
1
10
100
1k
10 k
100 k
Cycles (50 Hz)
Data Sheet D13661EJ4V0DS
5
AC10DSMA,AC10FSMA
• The information in this document is current as of June, 2004. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or
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products and/or types are available in every country. Please check with an NEC Electronics sales
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M8E 02. 11-1
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