ACE ACE5801 P-channel power mosfet Datasheet

ACE5801
P-Channel Power MOSFET
Description
The ACE5801 uses advanced trench technology to provide excellent RDS(ON), low gate charge and
operation with low gate voltage.
. This device is suitable for use as a load switching application and a wide variety of other applications.
Features
•
•
Advanced trench MOSFET process technology
Ultra low on-resistance with low gate charge
Applications
•
•
•
PWM application
Load switch
Battery charge in cellular handset
Absolute Maximum Ratings
Parameter
Symbol
Max
Unit
Drain-Source Voltage
VDSS
-12
V
Gate-Source Voltage
VGSS
±8
V
Drain Current-Continuous
ID
-16
Drain Current-Pulsed (note 1)
IDM
-65
Power Dissipation (note 2, TA=25℃)
Maximum Power Dissipation (note 3, TC=25℃)
PD
2.5
18
Thermal Resistance from Junction to Ambient (note 4)
RθJA
50
Thermal Resistance from Junction to case (note 4)
RθJC
6.9
Junction Temperature
TJ
150
Storage Temperature
TSTG
-55~150
A
W
℃/W
℃
Packaging Type
DFNWB2*2-6L
VER 1.2
1
ACE5801
P-Channel Power MOSFET
Ordering information
ACE5801 XX + H
Halogen - free
Pb - free
LN : DFNWB2*2-6L
Electrical Characteristics (TA=25 OC unless otherwise noted)
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Off characteristics
Drain-Source Breakdown Voltage
V(BR)DSS
VGS=0V, ID=-250uA
-12
V
Zero Gate Voltage Drain Current
IDSS
VDS=-12V, VGS=0V
-1
uA
Gate-Body Leakage Current
IGSS
VGS=±8V, VDS=0V
±100
nA
On characteristics (note 5)
VGS=-4.5V, ID=-6.7A
21
VGS=-2.5V, ID=-6.2A
27
Drain-Source On-state Resistance
RDS(ON)
Gate Threshold Voltage
VGS(th)
VDS=VGS, ID=-250uA
Forward Transconductance
gFS
VDS=-10V, ID=-6.7A
-0.4
-0.7
mΩ
-1
40
V
S
Dynamic characteristics (note 6)
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
2700
VDS=-10V, VGS=0V
f=1 MHz
680
pF
590
VDS=-6V, VGS=-8V,
ID=-10A
VDS=-6V, VGS=-4.5V,
ID=-10A
60
100
35
48
nC
-16
A
-1.2
V
5
10
Drain-source diode characteristics
Diode Forward Current (note 5)
IS
Diode Forward Voltage (note 4)
VSD
IS=-1.6A,VGS=0V
-0.5
Note:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. This test is performed with no heat sink at Ta=25℃.
3. This test is performed with infinite heat sink at Tc=25℃.
4. Surface mounted on FR4 board, t≤10S.
5. Pulse Test: Pulse With ≤300μs,Duty Cycle≤2%.
6. Guaranteed by design, not subject to production testing.
VER 1.2
2
ACE5801
P-Channel Power MOSFET
Typical Performance Characteristics
VER 1.2
3
ACE5801
P-Channel Power MOSFET
Packing Information
DFNWB2*2-6L
VER 1.2
4
ACE5801
P-Channel Power MOSFET
Notes
ACE does not assume any responsibility for use as critical components in life support devices or systems
without the express written approval of the president and general counsel of ACE Electronics Co., LTD.
As sued herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant
into the body, or (b) support or sustain life, and shoes failure to perform when properly used in
accordance with instructions for use provided in the labeling, can be reasonably expected to result in
a significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can
be reasonably expected to cause the failure of the life support device or system, or to affect its safety
or effectiveness.
ACE Technology Co., LTD.
http://www.ace-ele.com/
VER 1.2
5
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