ACPM-7357 UMTS Dual-Band 4x5mm Power Amplifier Module (Band1/Band8) Data Sheet Description Features The ACPM-7357 is a dual-band PAM (Power Amplifier Module) designed for UMTS Band1 and Band8. The ACPM7357 meets stringent UMTS linearity requirements. The 4mmx5mm form factor 14-pin surface mount package is self contained, incorporating 50ohm input and output matching networks x Dual-Band PA (Band1 and Band8) 5th The ACPM-7357 features generation of CoolPAM circuit technology which supports 3 modes – bypass, mid and high power modes. The CoolPAM is stage bypass technology which enables power amplifier to lower power consumption. Active bypass feature is added to 5th generation to enhance power added efficiency at low output range and this technology extends talk time of mobiles more by further saving power amplifier’s current consumption. The power amplifier is manufactured on an advanced InGaP HBT (hetero-junction Bipolar Transistor) MMIC (microwave monolithic integrated circuit) technology offering state-of-the-art reliability, temperature stability and ruggedness The Module is housed in a cost effective, small and thin 4x5mm package. Block Diagram Bypass Circuit RFin_LB Output Match Input Match & Power Divider Vcc1 Ven_LB Ven_HB RFin_HB Impedance Transformer Vcc2 Vmode Vbp Bias Circuit & Control Logic Input Match & Power Divider Output Match Bypass Circuit Impedance Transformer RFout_LB RFout_HB x Small Size (4x5mm) x Thin Package (1.0mm typ) x Excellent Linearity x 3-mode power control Bypass / Mid Power Mode / High Power Mode x High Efficiency at max output power x 14-pin surface mounting package x Internal 50ohm matching networks for both RF input and output x Lead-free, RoHS compliant, Green Applications x UMTS Band1 and Band8 Ordering Information Part Number Number of Devices Container ACPM-7357-TR1 1000 178mm (7”) Tape/Reel ACPM-7357-BLK 100 Bulk Absolute Maximum Ratings No damage assuming only one parameter is set at limit at a time with all other parameters set at or below typical value. Operation of any single parameter outside these conditions with the remaining parameters set at or below typical values may result in permanent damage Description Min RF Input Power (high power mode) Output power (bypass mode) Output power (mid power mode) Typ Max Unit Associated Pins 0 10 10 18 dBm RFIn_Hi, RFIn_Low RFOut_Hi, RFOut_Low RFOut_Hi, RFOut_Low DC Supply Voltage 0 3.4 5.0 V Vcc1, Vcc2 Enable Voltage 0 2.6 3.3 V Ven_Low, Ven_Hi Mode Control Voltage 0 2.6 3.3 V Vmode Bypass Control 0 2.6 3.3 V Vbp Storage Temperature -55 25 +125 °C Recommended Operating Condition Description Min Typ Max Unit DC Supply Voltage 3.2 3.4 4.2 V LOW HIGH 0 1.35 0 2.6 0.5 3.1 V V LOW HIGH 0 1.35 0 2.6 0.5 3.1 V V LOW HIGH 0 1.35 0 2.6 0.5 3.1 V V 915 1980 MHz MHz 85 °C Enable Voltage (Ven_Low, Ven_Hi) Mode Control Voltage (Vmode) Bypass Control Voltage (Vbp) Operating Frequency Band8 Band1 890 1920 Ambient Temperature -30 25 Operating Logic Table Power Mode Ven_Low, Ven_Hi Vbp Vmode Pout (Rel99) Pout (HSDPA, HSUPA MPR=0dB) High Power Mode HIGH LOW LOW ~27.0dBm (Band1) ~27.5dBm(Band8) ~26.0dBm (Band1) ~ 26.5dBm (Band8) Mid Power Mode HIGH LOW HIGH ~17dBm ~16dBm Bypass Mode HIGH HIGH HIGH ~8dBm ~7dBm Shut Down Mode LOW LOW LOW – – 2 Electrical Characteristics in Band1 – Conditions: Vcc=3.4V, Ven_Hi=2.6V, T=25°C, Zin/Zout=50ohm – Signal Configuration: 3GPP (DPCCH+1DPDCH) Up-Link unless specified otherwise Characteristics Condition Operating Frequency Range Gain Total Supply Current Min Typ Max Unit 1920 – 1980 MHz High Power Mode, Pout=27dBm 24 27.3 dB Mid Power Mode, Pout=17dBm 15 20.8 dB Bypass Power Mode, Pout=8dBm 10 14.0 High Power Mode, Pout=27dBm Quiescent Current Enable Current Mode Control Current 400 dB 450 mA Mid Power Mode, Pout=17dBm 69 100 mA Bypass Power Mode, Pout=8dBm 14 20 mA High Power Mode 75 100 125 mA Mid Power Mode 15 25 35 mA Bypass Mode 1.5 3 4.5 mA High Power Mode 10 PA Mid Power Mode 10 PA Bypass Mode 10 PA Mid Power Mode 5 PA Bypass Mode 5 Bypass Control Current PA 100 uA Total Current in Power-down mode Ven_Hi=0V, Vmode=0V, Vbp=0V 5 PA Adjacent Channel Leakage Ratio 5 MHz offset 10 MHz offset High Power Mode, Pout=27dBm -36 -46 dBc dBc 5 MHz offset 10 MHz offset High Power Mode, Pout=26dBm (HSDPA, HSUPA MPR=0dB) -35 -46 dBc dBc 5 MHz offset 10 MHz offset Mid Power Mode, Pout=17dBm -36 -46 dBc dBc 5 MHz offset 10 MHz offset Mid Power Mode, Pout=16dBm (HSDPA, HSUPA MPR=0dB) -36 -46 dBc dBc 5 MHz offset 10 MHz offset Bypass Mode, Pout=8dBm -36 -46 dBc dBc 5 MHz offset 10 MHz offset Bypass Mode, Pout=7dBm (HSDPA, HSUPA MPR=0dB) -36 -46 dBc dBc Second Third High Power Mode, Pout=27dBm -30 -40 dBc dBc Harmonic Suppression Input VSWR Stability (Spurious Output) 0.2 2:1 In-Band Load VSWR <= 5:1, All Phase Out of Band Load VSWR <= 10:1, All Phase Forwarded power fixed 2.5:1 -60 dBc Rx Band Noise Power -140 -136 dBm/Hz GPS Band Noise -141 -137 dBm/Hz ISM Band Noise -144 -140 dBm/Hz Phase Discontinuity Ruggedness 3 mid power mode at Pout=17dBm low power mode at Pout=8dBm high power mode, 19 mid power mode, 4 No Damage Pout<27dBm, Pin<10dBm, All phase High Power Mode deg deg 10:1 VSWR Electrical Characteristics in Band8 – Conditions: Vcc=3.4V, Ven_Low=2.6V, T=25°C, Zin/Zout=50ohm – Signal Configuration: 3GPP (DPCCH+1DPDCH) Up-Link unless specified otherwise Characteristics Condition Operating Frequency Range Gain High Power Mode, Pout=27.5dBm Total Supply Current Min. Typ. Max. Unit 890 – 915 MHz 24 27.2 Mid Power Mode, Pout=17dBm 13.5 17.5 dB Bypass Power Mode, Pout=8dBm 10 14.4 dB High Power Mode, Pout=27.5dBm 429 485 mA Mid Power Mode, Pout=17dBm 74 105 mA 14 20 mA 95 120 mA Bypass Power Mode, Pout=8dBm Quiescent Current High Power Mode Enable Current dB 70 Mid Power Mode 10 21 30 mA Bypass Mode 2 3.5 5 mA High Power Mode 10 PA Mid Power Mode 10 PA Bypass Mode 10 PA Mid Power Mode 5 PA Bypass Mode 5 PA Total Current in Power-down mode Ven_Low=0V, Vmode=0V, Vbp=0V 0.2 Adjacent Channel Leakage Ratio 5 MHz offset 10 MHz offset Mode Control Current Bypass Control Current Harmonic Suppression 100 uA 5 PA High Power Mode, Pout=27.5dBm -36 -46 dBc dBc 5 MHz offset 10 MHz offset High Power Mode, Pout=26.5dBm (HSDPA, HSUPA MPR=0dB) -35 -46 dBc dBc 5 MHz offset 10 MHz offset Mid Power Mode, Pout=17dBm -36 -46 dBc dBc 5 MHz offset 10 MHz offset Mid Power Mode, Pout=16dBm (HSDPA, HSUPA MPR=0dB) -36 -46 dBc dBc 5 MHz offset 10 MHz offset Bypass Mode, Pout=8dBm -36 -46 dBc dBc 5 MHz offset 10 MHz offset Bypass Mode, Pout=7dBm (HSDPA, HSUPA MPR=0dB) -36 -46 dBc dBc Second Third High Power Mode, Pout=27.5 dBm -30 -40 dBc dBc Input VSWR Stability (Spurious Output) 2:1 In-Band Load VSWR <= 5:1, All Phase Out of Band Load VSWR <= 10:1, All Phase Forwarded power fixed 2.5:1 -60 dBc Rx Band Noise Power -135.5 -133 dBm/Hz GPS Band Noise -150 -145 dBm/Hz -160 -155 ISM Band Noise Phase Discontinuity Ruggedness 4 mid power mode at Pout=17dBm low power mode at Pout=8dBm high power mode, 6 mid power mode, 25 No Damage Pout<27.5dBm, Pin<10dBm, All phase High Power Mode dBm/Hz deg deg 10:1 VSWR HSDPA Signal configuration used: 3GPP TS 34.121-1 Annex C (normative e): Measurement channels C.10.1 UL reference measurement channel for HSDPA tests Table C.10.1.4: E values for transmitter characteristics tests with HS-DPCCH Sub-test 2 (CM=1.0, MPR=0.0) HSUPA signal configuration used: 3GPP TS 34.121-1 Annex C (normative): Measurement channels C.11.1 UL reference measurement channel for E-DCH tests Table C.11.1.3: E values for transmitter characteristics tests with HS-DPCCH and E-DCH Sub-test 1 (CM=1.0, MPR=0.0) 5 Characteristics Data of Band1 35 500 450 400 350 300 250 200 150 100 50 0 1920MHz, 3.4V 1950MHz, 3.4V 1980MHz, 3.4V 25 0 0 5 10 15 Pout (dBm) 20 25 30 -5 5 10 15 Pout (dBm) 20 25 30 10 15 Pout (dBm) 20 25 30 -40 1920MHz, 3.4V 1950MHz, 3.4V 1980MHz, 3.4V -35 1920MHz, 3.4V 1950MHz, 3.4V 1980MHz, 3.4V -45 -40 ACLR2 (dBc) ACLR1 (dBc) 0 Gain vs. Output Power -30 -45 -50 -55 -50 -55 -60 -65 -60 -5 0 5 10 15 Pout (dBm) 20 25 30 Adjacent Channel Leakage Ratio 1 vs. Output Power PAE(%) 15 5 Total Current vs. Output Power -5 0 5 10 15 Pout (dBm) -70 -5 0 5 Adjacent Channel Leakage Ratio 2 vs. Output Power 1920MHz, 3.4V 1950MHz, 3.4V 1980MHz, 3.4V Power Added Efficiency vs. Output Power 6 20 10 -5 50 45 40 35 30 25 20 15 10 5 0 1920MHz, 3.4V 1950MHz, 3.4V 1980MHz, 3.4V 30 Gain (dB) Current (mA) (Vcc=3.4V, Ven_Hi=2.6, Vbp, Vmode= 0V or 2.6V, T=25°C, Zin/Zout=50ohm, Rel99) 20 25 30 Characteristics Data of Band8 500 450 400 350 300 250 200 150 100 50 0 35 880MHz, 3.4V 898MHz, 3.4V 915MHz, 3.4V 25 0 -5 0 5 10 15 Pout (dBm) 20 25 30 -5 5 10 15 Pout (dBm) 20 25 30 10 15 Pout (dBm) 20 25 30 -40 880MHz, 3.4V 898MHz, 3.4V 915MHz, 3.4V -45 -40 ACLR2 (dBc) ACLR1 (dBc) 0 Gain vs. Output Power 880MHz, 3.4V 898MHz, 3.4V 915MHz, 3.4V -35 -45 -50 -55 -50 -55 -60 -65 -60 -70 -5 0 5 10 15 Pout (dBm) 20 25 30 Adjacent Channel Power Ratio 1 vs. Output Power PAE(%) 15 5 -30 -5 0 5 10 15 Pout (dBm) -5 0 5 Adjacent Channel Power Ratio 2 vs. Output Power 880MHz, 3.4V 898MHz, 3.4V 915MHz, 3.4V Power Added Efficiency vs. Output Power 7 20 10 Total Current vs. Output Power 50 45 40 35 30 25 20 15 10 5 0 880MHz, 3.4V 898MHz, 3.4V 915MHz, 3.4V 30 Gain (dB) Current (mA) (Vcc=3.4V, Ven_Low=2.6, Vbp and Vmode= 0V or 2.6V, T=25°C, Zin/Zout=50ohm, Rel99) 20 25 30 Footprint All dimensions are in millimeter PIN DESCRIPTIONS Pin # Name 1 RFIn_Low Band8 RF Input 2 Vmode Mode Control 3 Vbp Bypass Control 4 Vcc1 Supply Voltage 5 Ven_Low Band8 PA Enable 6 Ven_Hi Band1 PA Enable 7 RFIn_Hi Band1 RF Input 8 RFOut_Hi Band1 RF Output 9 GND Ground 10 GND Ground 11 Vcc2 Supply Voltage 12 GND Ground 13 GND Ground 14 RFOut_Low Band8 RF Output XRAY TOP VIEW Package Dimensions All dimensions are in millimeter 0.6 Pin 1 Mark 1 14 2 13 3 12 4 11 5 10 6 9 7 8 4 ± 0.1 8 5 ± 0.1 1.0 ± 0.05 Description Marking Specification Pin1 Mark AVAGO ACPM-7357 PYYWW AAAAA Manufacturing Part Number Lot Number P YY WW AAAAA Manufacturing info Manufacturing Year Work Week Assembly Lot Number CoolPAM Avago Technologies’ CoolPAM is stage-bypass PA technology which saves more power compared with conventional PA. With this technology, the ACPM-7357 has very low quiescent current, and efficiencies at low and medium output power ranges are high. Incorporation of bias circuit The ACPM-7357 has internal bias circuit, which removes the need for external constant voltage source (LDO). PA on/off is controlled by Ven. This is digitally control pin. 3-mode power control with two mode control pins Figure 1. PDF and Current The ACPM-7357 supports three power modes (bypass power mode/mid power mode/high power mode) with two mode control pins (Vmode and Vbp). This control scheme enables the ACPM-7357 to save power consumption more, which accordingly gives extended talk time. Average current & Talk time PDF (probability density function) in the Figure 1. showing distribution of output power of mobile in real field gives motivation for stage-bypass PA. Output power is less than 16dBm for most of operating time (during talking), so it is important to save power consumption at low and medium output power ranges. 9 Average current consumed by PA can be calculated by summing up current at each output power weighted with probability. So it is expressed with integration of multiplication of current and probability at each output power. Average current = ³ (PDF x Current) dp Talk time is extended more as average current consumption is lowered. Mode control pins Vmode and Vbp are digitally controlled by baseband and they control the operating mode of the PA. The logic table is summarized in the below table. These pins do not require constant voltage for interface. Power Mode Ven_Low, Ven_Hi Vbp Vmode Pout (Rel99) Pout (HSDPA, HSUPA MPR=0dB) High Power Mode HIGH LOW LOW ~27.0dBm (Band1) ~27.5dBm(Band8) ~26.0dBm (Band1) ~ 26.5dBm (Band8) Mid Power Mode HIGH LOW HIGH ~17dBm ~16dBm Bypass Mode HIGH HIGH HIGH ~8dBm ~7dBm Shut Down Mode LOW LOW LOW – – Operating logic table. UMTS PA performance comparison – CoolPAM 4 and CoolPAM 5 450 350 Current (mA) The 5th generation of CoolPAM technology, ACPM-7357 can dramatically reduce Icc down to 3mA at bypass mode, which improves overall talk time and battery usage time of handset more compared with the CP4. CP5 CP4 400 300 250 200 150 100 50 Current (mA) 0 -10 70 65 60 55 50 45 40 35 30 25 20 15 10 5 0 -10 -8 0 10 Pout(dBm) 20 CP5 CP4 -6 -4 -2 0 2 4 6 Pout(dBm) 8 Figure 2. Icc Comparison of CP5 to CP4 (Avago CoolPAM) 10 30 10 12 14 16 Application on mobile phone board The figure 3 shows an application example in mobile. C5 and C6 should be placed close to pin4 and pin11. Bypass cap C1, C2, C3 and C4 should be also placed nearby from pin2, pin3, pin5 and pin6, respectively. The length of post-PA transmission line should be minimized to reduce line loss. TX filter C8 RF In Low C10 Coupler C1 C2 C11 PA_R0 L1 ACPM-7357 PA_R1 Low IN Vmode Vbp Vcc1 Ven_L Ven_H High IN PA_ON_Low Band PA_ON _High Band Low OUT GND GND Vcc2 GND GND High OUT RF Out Low output matching circuit C4 C3 RF In High C5 C12 C6 Coupler C13 C7 TX filter L2 C9 RF Out High VBATT Figure 3. Peripheral Circuits PCB layout and part placement on phone board 2 1 Via hole 4 3 Figure 4. PCB guideline on phone board 11 Notes: 1. To prevent voltage drop, make the bias lines as wide as possible (Pink line). 2. Use many via holes to fence off PA RF input and output traces for better isolation. Output signal of the PA should be isolated from input signal and the receive signal. Output signal should not be fed into PA input. (Green line) 3. Use via holes to connect outer ground plates to internal ground planes. They help heat spread out more easily and accordingly the board temperature can be lowered. They also help to improve RF stability (Yellow square). 4. PA which has a ground slug requires many via holes which go through all the layers (Red square). Metallization PCB Design Guidelines The recommended PCB land pattern is shown in figures on the left side. The substrate is coated with solder mask between the I/O and conductive paddle to protect the gold pads from short circuit that is caused by solder bleeding/bridging. 0.50 0.60 0.40 Stencil Design Guidelines A properly designed solder screen or stencil is required to ensure optimum amount of solder paste is deposited onto the PCB pads. 0.73 0.33 0.25 ø 0.3 Via on 0.6 pitch Solder Mask Opening 0.55 0.70 0.50 2.30 0.73 2.40 Solder Paste Stencil Aperture 0.50 0.60 0.40 2.10 0.73 2.00 12 The recommended stencil layout is shown here. Reducing the stencil opening can potentially generate more voids. On the other hand, stencil openings larger than 100% will lead to excessive solder paste smear or bridging across the I/O pads or conductive paddle to adjacent I/O pads. Considering the fact that solder paste thickness will directly affect the quality of the solder joint, a good choice is to use laser cut stencil composed of 0.100mm(4mils) or 0.127mm(5mils) thick stainless steel which is capable of producing the required fine stencil outline. Evaluation Board Schematic Band8 RF In Band8 RF Out 1 RFIn_Low RFOut_Low 14 Vmode Vbp C6 100pF Vcc1 C5 100pF Ven_Band8 C3 1000pF C4 2.2uF C2 100pF C1 100pF Ven_Band1 Band1 RF In 2 Vmode GND 13 3 Vbp GND 12 4 Vcc1 Vcc2 11 5 Ven_Low GND 10 Vcc2 6 Ven_Hi GND 9 7 RFIn_Hi RFOut_Hi 8 13 C8 2.2uF Band1 RF Out Evaluation Board Description C4 C7 1000pF AVAGO ACPM-7357 PYYWW AAAAA C8 C7 Tape and Reel Information AVAGO ACPM-7357 PYYWW AAAAA Dimension List Dimension Millimeter Dimension Millimeter A0 4.40±0.10 P2 2.00±0.05 B0 5.30±0.10 P10 40.00±0.20 K0 1.20±0.10 E 1.75±0.10 D0 1.55±0.05 F 5.50±0.05 D1 1.60±0.10 W 12.00±0.30 P0 4.00±0.10 T 0.30±0.05 P1 8.00±0.10 Tape and Reel Format – 4 mm x 5 mm 14 Reel Drawing BACK VIEW Shading indicates thru slots 18.4 max. 178 +0.4 -0.2 50 min. 25 min wide (ref) Slot for carrier tape insertion for attachment to reel hub (2 places 180° apart) 12.4 +2.0 -0.0 FRONT VIEW 1.5 min. 13.0 ± 0.2 21.0 ± 0.8 Plastic Reel Format (all dimensions are in millimeters) 15 NOTES: 1. Reel shall be labeled with the following information (as a minimum). a. manufacturers name or symbol b. Avago Technologies part number c. purchase order number d. date code e. quantity of units 2. A certificate of compliance (c of c) shall be issued and accompany each shipment of product. 3. Reel must not be made with or contain ozone depleting materials. 4. All dimensions in millimeters (mm) Handling and Storage ESD (Electrostatic Discharge) Electrostatic discharge occurs naturally in the environment. With the increase in voltage potential, the outlet of neutralization or discharge will be sought. If the acquired discharge route is through a semiconductor device, destructive damage will result. ESD countermeasure methods should be developed and used to control potential ESD damage during handling in a factory environment at each manufacturing site. MSL (Moisture Sensitivity Level) Plastic encapsulated surface mount package is sensitive to damage induced by absorbed moisture and temperature. Avago Technologies follows JEDEC Standard J-STD 020B. Each component and package type is classified for moisture sensitivity by soaking a known dry package at various temperatures and relative humidity, and times. After soak, the components are subjected to three consecutive simulated reflows. The out of bag exposure time maximum limits are determined by the classification test describe below which corresponds to a MSL classification level 6 to 1 according to the JEDEC standard IPC/JEDEC J-STD-020B and J-STD-033. ACPM-7357 is MSL3. Thus, according to the J-STD-033 p.10, the maximum Manufacturers Exposure Time (MET) for this part is 168 hours. After this time period, the part would need to be removed from the reel, de-taped and then re-baked. MSL classification reflow temperature for the ACPM-7357 is targeted at 260°C +0/-5°C. Figure and table on next page show typical SMT profile for maximum temperature of 260 +0/-5°C. Moisture Classification Level and Floor Life MSL Level Floor Life (out of bag) at factory ambient =< 30°C/60% RH or as stated 1 Unlimited at =< 30°C/85% RH 2 1 year 2a 4 weeks 3 168 hours 4 72 hours 5 48 hours 5a 24 hours 6 Mandatory bake before use. After bake, must be reflowed within the time limit specified on the label Note : 1. The MSL Level is marked on the MSL Label on each shipping bag. 16 Reflow Profile Recommendations tp Tp Critical Zone TL to Tp Ramp-up Temperature TL tL Tsmax Tsmin Ramp-down ts Preheat 25 t 25°C to Peak Time Typical SMT Reflow Profile for Maximum Temperature = 260 +0/-5°C Typical SMT Reflow Profile for Maximum Temperature = 260 +0/ -5°C Profile Feature Sn-Pb Solder Pb-Free Solder Average ramp-up rate (TL to TP) 3°C/sec max 3°C/sec max 100°C 150°C 60-120 sec 150°C 200°C 60-120 sec Preheat – Temperature Min (Tsmin) – Temperature Max (Tsmax) – Time (min to max) (ts) Tsmax to TL – Ramp-up Rate 3°C/sec max Time maintained above: – Temperature (TL) – Time (TL) 183°C 60-150 sec 217°C 60-150 sec Peak temperature (Tp) 240 +0/-5°C 260 +0/-5°C 10-30 sec 20-40 sec Ramp-down Rate 6°C/sec max 6°C/sec max Time 25°C to Peak Temperature 6 min max. 8 min max. Time within 5°C of actual Peak Temperature (tp) 17 Storage Condition Baking of Populated Boards Packages described in this document must be stored in sealed moisture barrier, antistatic bags. Shelf life in a sealed moisture barrier bag is 12 months at <40°C and 90% relative humidity (RH) J-STD-033 p.6. Some SMD packages and board materials are not able to withstand long duration bakes at 125°C. Examples of this are some FR-4 materials, which cannot withstand a 24 hr bake at 125°C. Batteries and electrolytic capacitors are also temperature sensitive. With component and board temperature restrictions in mind, choose a bake temperature from Table 4-1 in J-STD 033; then determine the appropriate bake duration based on the component to be removed. For additional considerations see IPC-7711 andIPC-7721. Out-of-Bag Time Duration After unpacking the device must be soldered to the PCB within 168 hours with factory conditions <30°C and 60% RH as listed in the Table 5-1 on the J-STD-020D p.6. Baking It is not necessary to re-bake the part if both conditions (storage conditions and out-of bag conditions) have been satisfied. Baking must be done if at least one of the conditions above has not been satisfied. The baking conditions are listed in the Table 4-1 on the J-STD-033 p.8. CAUTION Tape and reel materials typically cannot be baked at the temperature described above. If out-of-bag exposure time is exceeded, parts must be baked for a longer time at low temperatures, or the parts must be de-reeled, detaped, re-baked and then put back on tape and reel. (See moisture sensitive warning label on each shipping bag for information of baking). Board Rework Component Removal, Rework and Remount If a component is to be removed from the board, it is recommended that localized heating be used and the maximum body temperatures of any surface mount component on the board not exceed 200°C. This method will minimize moisture related component damage. If any component temperature exceeds 200°C, the board must be baked dry per 4-2 prior to rework and/or component removal. Component temperatures shall be measured at the top center of the package body. Any SMD packages that have not exceeded their floor life can be exposed to a maximum body temperature as high as their specified maximum reflow temperature. Removal for Failure Analysis Not following the above requirements may cause moisture/ reflow damage that could hinder or completely prevent the determination of the original failure mechanism. 18 Derating due to Factory Environmental Conditions Factory floor life exposures for SMD packages removed from the dry bags will be a function of the ambient environmental conditions. A safe, yet conservative, handling approach is to expose the SMD packages only up to the maximum time limits for each moisture sensitivity level as shown in table of Moisture Classification Level and Floor Life. This approach, however, does not work if the factory humidity or temperature is greater than the testing conditions of 30°C/60% RH. A solution for addressing this problem is to derate the exposure times based on the knowledge of moisture diffusion in the component package materials ref. JESD22-A120). Recommended equivalent total floor life exposures can be estimated for a range of humidities and temperatures based on the nominal plastic thickness for each device. Table on follwoing page lists equivalent derated floor lives for humidities ranging from 20-90% RH for three temperature, 20°C, 25°C, and 30°C. This table is applicable to SMDs molded with novolac, biphenyl or multifunctional epoxy mold compounds. The following assumptions were used in calculating this table: 1. Activation Energy for diffusion = 0.35eV (smallest known value). 2. For ≤60% RH, use Diffusivity = 0.121exp (-0.35eV/kT) mm2/s (this used smallest known Diffusivity @ 30°C). 3. For >60% RH, use Diffusivity = 1.320exp (-0.35eV/kT) mm2/s (this used largest known Diffusivity @ 30°C). Recommended Equivalent Total Floor Life (days) @ 20°C, 25°C & 30°C, 35°C For ICs with Novolac, Biphenyl and Multifunctional Epoxies (Reflow at same temperature at which the component was classified) Maximum Percent Relative Humidity Maximum Percent Relative Humidity Package Type and Moisture Body Thickness Sensitivity Level Body Thickness ≥3.1 mm Including PQFPs >84 pin, PLCCs (square) All MQFPs or All BGAs ≥1 mm Level 2a Level 3 Level 4 Level 5 Level 5a Body 2.1 mm ≤ Thickness <3.1 mm including PLCCs (rectangular) 18-32 pin SOICs (wide body) SOICs ≥20 pins, PQFPs ≤80 pins Level 2a Level 3 Level 4 Level 5 Level 5a Body Thickness <2.1 mm including SOICs <18 pin All TQFPs, TSOPs or All BGAs <1 mm body thickness Level 2a Level 3 Level 4 Level 5 Level 5a 5% 10% 20% 30% 40% 50% 60% 70% 80% 90% ∞ ∞ ∞ ∞ ∞ ∞ ∞ ∞ ∞ ∞ ∞ ∞ ∞ ∞ ∞ ∞ ∞ ∞ ∞ ∞ ∞ ∞ ∞ ∞ ∞ ∞ ∞ ∞ ∞ ∞ ∞ ∞ ∞ ∞ ∞ ∞ ∞ ∞ ∞ ∞ ∞ ∞ ∞ ∞ ∞ ∞ ∞ ∞ ∞ ∞ ∞ ∞ ∞ ∞ ∞ ∞ ∞ ∞ ∞ ∞ ∞ ∞ ∞ ∞ ∞ ∞ ∞ ∞ 3 5 6 8 2 4 5 7 1 2 3 5 ∞ ∞ ∞ ∞ ∞ ∞ ∞ ∞ 5 7 9 11 3 4 5 6 1 2 2 3 ∞ ∞ ∞ ∞ ∞ ∞ ∞ ∞ ∞ ∞ ∞ ∞ ∞ ∞ ∞ ∞ 7 10 13 18 94 124 167 231 8 10 13 17 3 4 5 7 2 3 5 7 1 1 2 4 ∞ ∞ ∞ ∞ 12 19 25 32 4 5 7 9 2 3 4 5 1 1 2 2 ∞ ∞ ∞ ∞ ∞ ∞ ∞ ∞ ∞ ∞ ∞ ∞ 7 13 18 26 2 3 5 6 44 60 78 103 7 9 11 14 3 4 5 7 2 3 4 6 1 1 2 3 ∞ ∞ ∞ ∞ 9 12 15 19 3 4 5 7 2 3 3 5 1 1 2 2 ∞ ∞ ∞ ∞ ∞ ∞ ∞ ∞ 7 9 12 17 3 5 6 8 1 2 3 4 32 41 53 69 6 8 10 13 2 4 5 7 2 2 4 5 1 1 2 3 58 86 148 ∞ 7 9 12 15 3 4 5 6 2 2 3 4 1 1 2 2 ∞ ∞ ∞ ∞ ∞ ∞ ∞ ∞ 4 5 7 9 2 3 4 6 1 1 2 3 26 33 42 57 6 7 9 12 2 3 5 7 1 2 3 5 1 1 2 3 30 39 51 69 6 8 10 13 2 3 4 6 2 2 3 4 1 1 2 2 ∞ ∞ ∞ ∞ 8 11 14 20 3 4 5 7 2 2 3 5 1 1 2 2 16 28 36 47 6 7 9 12 2 3 4 6 1 2 3 4 1 1 2 2 22 28 37 49 5 7 9 12 2 3 4 5 1 2 3 4 1 1 2 2 17 28 ∞ ∞ 5 7 10 13 2 3 4 6 1 2 3 4 1 1 2 2 7 10 14 19 4 5 7 10 2 3 3 5 1 2 2 3 1 1 1 2 3 4 6 8 2 3 5 7 1 2 3 4 1 1 2 3 1 1 1 2 1 1 2 2 1 1 2 2 1 1 2 2 1 1 2 2 1 1 1 2 5 7 10 13 3 4 6 8 1 2 3 4 1 1 2 3 1 1 1 2 2 3 4 5 2 2 3 5 1 2 2 3 1 1 1 3 0.5 0.5 1 2 0.5 1 1 2 0.5 1 1 2 0.5 1 1 2 0.5 1 1 2 0.5 1 1 2 4 6 8 10 3 4 5 7 1 2 3 4 1 1 2 3 1 1 1 2 1 2 3 4 1 2 3 4 1 1 2 3 1 1 1 2 0.5 0.5 1 1 0.5 1 1 1 0.5 1 1 1 0.5 1 1 1 0.5 1 1 1 0.5 0.5 1 1 For product information and a complete list of distributors, please go to our web site: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries. Data subject to change. Copyright © 2005-2009 Avago Technologies. All rights reserved. AV02-2036EN - July 30, 2009 35°C 30°C 25°C 20°C 35°C 30°C 25°C 20°C 35°C 30°C 25°C 20°C 35°C 30°C 25°C 20°C 35°C 30°C 25°C 20°C 35°C 30°C 25°C 20°C 35°C 30°C 25°C 20°C 35°C 30°C 25°C 20°C 35°C 30°C 25°C 20°C 35°C 30°C 25°C 20°C 35°C 30°C 25°C 20°C 35°C 30°C 25°C 20°C 35°C 30°C 25°C 20°C 35°C 30°C 25°C 20°C 35°C 30°C 25°C 20°C