Intersil ACS86D Radiation hardened quad 2-input exclusive or gate Datasheet

ACS86MS
Radiation Hardened
Quad 2-Input Exclusive OR Gate
April 1995
Features
Pinouts
14 LEAD CERAMIC DUAL-IN-LINE
MIL-STD-1835 DESIGNATOR, CDIP2-T14, LEAD FINISH C
TOP VIEW
• 1.25 Micron Radiation Hardened SOS CMOS
• Total Dose 300K RAD (Si)
• Single Event Upset (SEU) Immunity
<1 x 10-10 Errors/Bit-Day (Typ)
A1 1
14 VCC
• SEU LET Threshold >80 MEV-cm2/mg
B1 2
13 B4
Y1 3
12 A4
• Latch-Up Free Under Any Conditions
A2 4
11 Y4
• Military Temperature Range: -55oC to +125oC
B2 5
10 B3
Y2 6
9 A3
GND 7
8 Y3
11
• Dose Rate Upset >10
RAD (Si)/s, 20ns Pulse
• Significant Power Reduction Compared to ALSTTL
Logic
• DC Operating Voltage Range: 4.5V to 5.5V
• Input Logic Levels
- VIL = 30% of VCC Max
14 LEAD CERAMIC FLATPACK
MIL-STD-1835 DESIGNATOR, CDFP3-F14, LEAD FINISH C
TOP VIEW
- VIH = 70% of VCC Min
• Input Current ≤1µA at VOL, VOH
A1
1
14
VCC
B1
2
13
B4
The Intersil ACS86MS is a radiation hardened quad 2-input
exclusive OR gate. A high logic level on both inputs forces
the output to a logic low state.
Y1
3
12
A4
A2
4
11
Y4
B2
5
10
B3
The ACS86MS utilizes advanced CMOS/SOS technology to
achieve high-speed operation. This device is a member of the
radiation hardened, high-speed, CMOS/SOS Logic Family.
Y2
6
9
A3
GND
7
8
Y3
Description
Ordering Information
PART NUMBER
TEMPERATURE RANGE
ACS86DMSR
-55oC
ACS86KMSR
-55oC
SCREENING LEVEL
PACKAGE
to
+125oC
Intersil Class S Equivalent
14 Lead SBDIP
to
+125oC
Intersil Class S Equivalent
14 Lead Ceramic Flatpack
ACS86D/Sample
+25oC
Sample
14 Lead SBDIP
ACS86K/Sample
+25oC
Sample
14 Lead Ceramic Flatpack
ACS86HMSR
+25oC
Die
Die
Functional Diagram
Truth Table
INPUTS
OUTPUT
An
Bn
Yn
L
L
L
(1, 4, 9, 12)
An
L
H
H
H
L
H
Bn
(2, 5, 10, 13)
H
H
L
(3, 6, 8, 11)
Yn
NOTE: L = Logic Level Low, H = Logic Level High
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
1
518849
File Number 3995
Spec Number
Specifications ACS86MS
Absolute Maximum Ratings
Reliability Information
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +6.0V
Input Voltage Range . . . . . . . . . . . . . . . . . . . . . .-0.5V to VCC +0.5V
DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA
DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . .±50mA
Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC
Lead Temperature (Soldering 10s) . . . . . . . . . . . . . . . . . . . . +265oC
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
(All Voltages Referenced to VSS)
Thermal Impedance
θJA
θJC
DIP. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
74oC/W
24oC/W
Flatpack . . . . . . . . . . . . . . . . . . . . . . . . . . 116oC/W
30oC/W
Maximum Package Power Dissipation at +125oC
DIP. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.7W
Flatpack . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.4W
Maximum Device Power Dissipation. . . . . . . . . . . . . . . . . . .(TBD)W
Gate Count . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52 Gates
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Operating Conditions
Supply Voltage Range . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Input Rise and Fall Time at 4.5V VCC (TR, TF) . . . . . . .10ns/ V Max
Operating Temperature Range . . . . . . . . . . . . . . . . -55oC to +125oC
Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . VCC to 70% of VCC
Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . . .0V to 30% of VCC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
Supply Current
Output Current
(Source)
Output Current
(Sink)
Output Voltage High
Output Voltage Low
Input Leakage
Current
Noise Immunity
Functional Test
SYMBOL
ICC
IOH
IOL
VOH
VOL
IIN
FN
GROUP
A SUBGROUPS
TEMPERATURE
MIN
MAX
UNITS
1
+25oC
-
5
µA
2, 3
+125oC, -55oC
-
100
µA
1
+25oC
-12
-
mA
2, 3
+125oC, -55oC
-8
-
mA
1
+25oC
12
-
mA
2, 3
+125oC, -55oC
8
-
mA
VCC = 5.5V, VIH = 3.85V,
VIL = 1.65V, IOH = -50µA
1, 2, 3
+25oC, +125oC, -55oC
VCC -0.1
-
V
VCC = 4.5V, VIH = 3.15V,
VIL = 1.35V, IOH = -50µA
1, 2, 3
+25oC, +125oC, -55oC
VCC -0.1
-
V
VCC = 5.5V, VIH = 3.85V,
VIL = 1.65V, IOL = 50µA
1, 2, 3
+25oC, +125oC, -55oC
-
0.1
V
VCC = 4.5V, VIH = 3.15V,
VIL = 1.35V, IOL = 50µA
1, 2, 3
+25oC, +125oC, -55oC
-
0.1
V
1
+25oC
-
±0.5
µA
2, 3
+125oC, -55oC
-
±1.0
µA
7, 8A, 8B
+25oC, +125oC, -55oC
-
-
V
(NOTE 1)
CONDITIONS
VCC = 5.5V,
VIN = VCC or GND
VCC = 4.5V, VIH = 4.5V,
VOUT = VCC -0.4V,
VIL = 0V, (Note 2)
VCC = 4.5V, VIH = 4.5V,
VOUT = 0.4V, VIL = 0V,
(Note 2)
VCC = 5.5V,
VIN = VCC or GND
VCC = 4.5V, VIH = 3.15V,
VIL = 1.35V, (Note 3)
LIMITS
NOTES:
1. All voltages referenced to device GND.
2. Force/measure functions may be interchanged.
3. For functional tests, VO ≥4.0V is recognized as a logic “1”, and VO ≤0.5V is recognized as a logic “0”.
Spec Number
2
518849
Specifications ACS86MS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
Propagation Delay
Input to Output
(NOTES 1, 2)
CONDITIONS
SYMBOL
GROUP
A SUBGROUPS
LIMITS
TEMPERATURE
MIN
MAX
UNITS
TPHL
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
9
+25oC
2
12
ns
TPLH
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
10, 11
+125oC, -55oC
2
13
ns
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
LIMITS
PARAMETER
SYMBOL
Capacitance Power
Dissipation
CPD
Input Capacitance
CIN
CONDITIONS
NOTE
TEMP
MIN
TYP
MAX
UNITS
1
+25oC
-
-
pF
1
+125oC
-
TBD
TBD
-
pF
1
+25oC
-
-
10
pF
1
+125oC
-
-
10
pF
VCC = 5.0V, VIH = 5.0V,
VIL = 0V, f = 1MHz
VCC = 5.0V, VIH = 5.0V,
VIL = 0V, f = 1MHz
NOTE:
1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.
TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
RAD
LIMITS
(NOTE 1)
CONDITIONS
TEMPERATURE
MIN
MAX
Supply Current
ICC
VCC = 5.5V, VIN = VCC or GND
+25oC
-
100
µA
Output Current
(Source)
IOH
VCC = VIH = 4.5V,
VOUT = VCC -0.4V, VIL = 0
+25oC
-8.0
-
mA
Output Current (Sink)
IOL
VCC = VIH = 4.5V,
VOUT = 0.4V, VIL = 0
+25oC
8.0
-
mA
Output Voltage High
VOH
VCC = 5.5V, VIH = 3.85V,
VIL = 1.65V, IOH = -50µA
+25oC
VCC -0.1
-
V
VCC = 4.5V, VIH = 3.15V,
VIL = 1.35V, IOH = -50µA
+25oC
VCC -0.1
-
V
VCC = 5.5V, VIH = 3.85V,
VIL = 1.65V, IOL = 50µA
+25oC
-
0.1
V
VCC = 4.5V, VIH = 3.15V,
VIL = 1.35V, IOL = 50µA
+25oC
-
0.1
V
Output Voltage Low
SYMBOL
VOL
UNITS
Input Leakage Current
IIN
VCC = 5.5V, VIN = VCC or GND
+25oC
-
±1
µA
Noise Immunity
Functional Test
FN
VCC = 4.5V, VIH = 3.15V,
VIL = 1.35V, (Note 2)
+25oC
-
-
V
VCC = 4.5V, VIH = 4.5V, VIL = 0V
+25oC
2
13
ns
Propagation Delay
Input to Output
TPHL
TPLH
NOTES:
1. All voltages referenced to device GND.
2. For functional tests, VO ≥4.0V is recognized as a logic “1”, and VO ≤0.5V is recognized as a logic “0”.
TABLE 5. DELTA PARAMETERS (+25oC)
PARAMETER
SYMBOL
(NOTE 1)
DELTA LIMIT
UNITS
Supply Current
ICC
±1.0
µA
Output Current
IOL/IOH
±15
%
NOTE:
1. All delta calculations are referenced to 0 hour readings or pre-life readings.
Spec Number
3
518849
Specifications ACS86MS
TABLE 6. APPLICABLE SUBGROUPS
CONFORMANCE GROUP
METHOD
GROUP A SUBGROUPS
Initial Test (Preburn-In)
100%/5004
1, 7, 9
ICC, IOL/H
Interim Test 1 (Postburn-In)
100%/5004
1, 7, 9
ICC, IOL/H
Interim Test 2 (Postburn-In)
100%/5004
1, 7, 9
ICC, IOL/H
PDA
100%/5004
1, 7, 9, Deltas
Interim Test 3 (Postburn-In)
100%/5004
1, 7, 9
PDA
100%/5004
1, 7, 9, Deltas
Final Test
100%/5004
2, 3, 8A, 8B, 10, 11
Sample/5005
1, 2, 3, 7, 8A, 8B, 9, 10, 11
Subgroup B-5
Sample/5005
1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas
Subgroup B-6
Sample/5005
1, 7, 9
Sample/5005
1, 7, 9
Group A (Note 1)
Group B
Group D
READ AND RECORD
ICC, IOL/H
Subgroups 1, 2, 3, 9, 10, 11
NOTE:
1. Alternate Group A testing may be exercised in accordance with MIL-STD-883, Method 5005.
TABLE 7. TOTAL DOSE IRRADIATION
TEST
CONFORMANCE GROUP
Group E Subgroup 2
READ AND RECORD
METHOD
PRE RAD
POST RAD
PRE RAD
POST RAD
5005
1, 7, 9
Table 4
1, 9
Table 4 (Note 1)
NOTE:
1. Except FN test which will be performed 100% Go/No-Go.
TABLE 8. BURN-IN TEST CONNECTIONS (+125oC < TA < 139oC)
OSCILLATOR
GROUND
1/2 VCC = 3V ±0.5V
VCC = 6V ±0.5V
50kHz
25kHz
1, 2, 4, 5, 7, 9, 10,
12, 13
3, 6, 8, 11
14
-
-
7
3, 6, 8, 11
1, 2, 4, 5, 9,
10, 12, 13
-
-
7
3, 6, 8, 11
14
1, 2, 4, 5, 9,
10, 12, 13
-
OPEN
STATIC BURN-IN 1 (Note 1)
STATIC BURN-IN 2 (Note 1)
DYNAMIC BURN-IN (Note 1)
NOTE:
1. Each pin except VCC and GND will have a series resistor of 500Ω ±5%.
TABLE 9. IRRADIATION TEST CONNECTIONS (TA = +25oC, ±5oC)
FUNCTION
OPEN
GROUND
VCC ±0.5V
Irradiation Circuit (Note 1)
3, 6, 8, 11
7
1, 2, 4, 5, 9, 10, 12, 13, 14
NOTE:
1. Each pin except VCC and GND will have a series resistor of 47kΩ ±5%. Group E, Subgroup 2, sample size is 4 dice/wafer, 0 failures.
Spec Number
4
518849
Specifications ACS86MS
Intersil - Space Products MS Screening
Wafer Lot Acceptance (All Lots) Method 5007 (Includes SEM)
100% Static Burn-In 2 Method 1015, 24 Hours at +125oC Min
Radiation Verification (Each Wafer) Method 1019,
4 Samples/Wafer, 0 Rejects
100% Interim Electrical Test 2 (Note 1)
100% Nondestructive Bond Pull Method 2023
100% Dynamic Burn-In Method 1015, 240 Hours at +125oC
or 180 Hours at +135oC
100% Internal Visual Inspection Method 2010
100% Interim Electrical Test 3 (Note 1)
100% Temperature Cycling Method 1010 Condition C
(-65o to +150oC)
100% Final Electrical Test
100% Constant Acceleration
100% Radiographics Method 2012 (2 Views)
100% PIND Testing
100% External Visual Method 2009
100% External Visual Inspection
Group A (All Tests) Method 5005 (Class S)
100% Serialization
Group B (Optional) Method 5005 (Class S) (Note 2)
100% Initial Electrical Test
Group D (Optional) Method 5005 (Class S) (Note 2)
100% Static Burn-In 1 Method 1015, 24 Hours at +125oC Min
CSI and/or GSI (Optional) (Note 2)
100% Interim Electrical Test 1 (Note 1)
Data Package Generation (Note 3)
100% Fine and Gross Seal Method 1014
NOTES:
1. Failures from interim electrical tests 1 and 2 are combined for determining PDA (PDA = 5% for subgroups 1, 7, 9 and delta failures combined, PDA = 3% for subgroup 7 failures). Interim electrical tests 3 PDA (PDA = 5% for subgroups 1, 7, 9 and delta failures combined,
PDA = 3% for subgroup 7 failures).
2. These steps are optional, and should be listed on the purchase order if required.
3. Data Package Contents:
Cover Sheet (P.O. Number, Customer Number, Lot Date Code, Intersil Number, Lot Number, Quantity).
Certificate of Conformance (as found on shipper).
Lot Serial Number Sheet (Good Unit(s) Serial Number and Lot Number).
Variables Data (All Read, Record, and delta operations).
Group A Attributes Data Summary.
Wafer Lot Acceptance Report (Method 5007) to include reproductions of SEM photos. NOTE: SEM photos to include percent of step coverage.
X-Ray Report and Film, including penetrometer measurements.
GAMMA Radiation Report with initial shipment of devices from the same wafer lot; containing a Cover Page, Disposition, RAD Dose,
Lot Number, Test Package, Spec Number(s), Test Equipment, etc. Irradiation Read and Record data will be on file at Intersil.
Propagation Delay Timing Diagram and Load Circuit
DUT
VIH
VS
TEST
POINT
RL
500Ω
CL
50pF
INPUT
VSS
TPLH
TPHL
VOH
VS
OUTPUT
AC VOLTAGE LEVELS
VOL
PARAMETER
ACS
UNITS
VCC
4.50
V
VIH
4.50
V
VS
2.25
V
VIL
0
V
GND
0
V
Spec Number
5
518849
ACS86MS
Die Characteristics
DIE DIMENSIONS:
88 mils x 88 mils
2.24mm x 2.24mm
DIE ATTACH:
Material: Silver Glass or JM7000 Polymer after 7/1/95
WORST CASE CURRENT DENSITY:
< 2.0 x 105 A/cm2
METALLIZATION:
Type: AlSiCu
Metal 1 Thickness: 6.75kÅ (Min), 8.25kÅ (Max)
Metal 2 Thickness: 9kÅ (Min), 11kÅ (Max)
BOND PAD SIZE:
> 4.3 mils x 4.3 mils
> 110µm x 110µm
GLASSIVATION:
Type: SiO2
Thickness: 8kÅ ±1kÅ
Metallization Mask Layout
ACS86MS
B1
(2)
A1
(1)
VCC
(14)
B4
(13)
Y1 (3)
(12) A4
A2 (4)
(11) Y4
NC
NC
(10) B3
B2 (5)
(6)
Y2
(7)
GND
(8)
Y3
(9)
A3
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
Spec Number
6
518849
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