TriQuint AH1-1G Lead-free/green/rohs-compliant sot-89 package Datasheet

AH1-1
High Dynamic Range Amplifier
Product Features






250 – 4000 MHz
+41 dBm OIP3
3 dB Noise Figure
13.5 dB Gain
+21 dBm P1dB
Lead-free/Green/RoHS-compliant
SOT-89 Package
 Single +5 V Supply
 MTTF > 100 years
Applications






Mobile Infrastructure
CATV / DBS
W-LAN / Wi-Bro / WiMAX
RFID
Defense / Homeland Security
Fixed Wireless
Product Description
The AH1-1 is a high dynamic range amplifier in a lowcost surface-mount package. The combination of low
noise figure and high output IP3 at the same bias point
makes it ideal for receiver and transmitter applications.
The AH1-1 is a specially screened version of the AH1
offering a very narrow gain spread from device to device.
GND
4
The device combines dependable performance with
superb quality to maintain MTTF values exceeding 100
years at mounting temperatures of +85C. The AH1-1 is
available in both the standard SOT-89 package and the
environmentally-friendly
lead-free/green/RoHScompliant SOT-89 package.
1
2
3
RF IN
GND
RF OUT
Function
Input
Output / Bias
Ground
The broadband amplifier uses a high reliability GaAs
MMIC technology and is targeted for applications where
high linearity is required. It is well suited for various
current and next generation wireless technologies such as
GPRS, GSM, CDMA, and W-CDMA. In addition, the
AH1-1 will work for other applications within the 250 to
4000 MHz frequency range such as fixed wireless.
Specifications (1)
Parameter
Functional Diagram
Pin No.
1
3
2, 4
Typical Performance (4)
Units
Min
MHz
MHz
dB
dB
dB
dBm
dBm
dB
mA
V
250
Operational Bandwidth
Test Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3 (2)
Noise Figure (3)
Operating Current Range
Supply Voltage
12.9
+37
120
Typ
800
13.3
8
15
+21.7
+41
3
150
5
Max
Parameter
4000
Frequency
S21
S11
S22
Output P1dB
Output IP3 (2)
IS-95 Channel Power (5)
Noise Figure
Supply Voltage
Device Current
13.8
180
Units
MHz
dB
dB
dB
dBm
dBm
dB
dB
V
mA
Typical
900
14.2
-21
-14
+21.7
+42
+15.5
3.2
1900
12.2
-14
-13
+22
+41
+16.5
3.3
5
150
2140
12.0
-21
-11
+22
+40
3.3
1. Test conditions unless otherwise noted: T = 25 ºC, 50 system.
2. OIP3 measured with two tones at an output power of +5 dBm/tone separated by 10 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. Noise figure can be optimized by matching the input for optimal return loss.
4. Parameters reflect performance in an AH1-PCB application circuit, as shown on page 3.
5. Measured with -45 dBc ACPR, IS-95 9 channels fwd.
Not Recommended for
New Designs
Absolute Maximum Rating
Recommended Replacement
Part: TQP3M9007
Parameter
Rating
Operating Case Temperature
Storage Temperature
Supply Voltage
RF Input Power (continuous)
Junction Temperature
Thermal Resistance, Rth
-40 to +85 C
-55 to +150 C
+6 V
+10 dBm
+160 C
59 C / W
Ordering Information
Part No.
Description
AH1-1G
High Dynamic Range Amplifier
(lead-free/green/RoHS-compliant SOT-89 Pkg)
Standard T/R size = 1000 pieces on a 7” reel.
Junction Temperature for >106 hours MTTF
Operation of this device above any of these parameters may cause permanent
damage.
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc  Phone +1-503-615-9000  FAX: +1-503-615-8900  e-mail: [email protected]  Web site: www.TriQuint.com
Page 1 of 5
May 2012
AH1-1
High Dynamic Range Amplifier
Typical Device Data
S-Parameters (VDS = +5 V, IDS = 150 mA, T = 25C, unmatched device in a 50 ohm system)
Input return loss can be improved with the appropriate input matching network shown later in this datasheet.
OIP3 Load Pull Circles
900 MHz
IP3=35
IP3=36
IP3=37
IP3=38
IP3=39
IP3=41
VSWR=1.5
VSWR=2
VSWR=3
VSWR=4
VSWR=5
S-Parameters (VD = +5 V, ID = 150 mA, T = 25 C, calibrated to device leads)
Freq (MHz)
50
250
500
750
1000
1250
1500
1750
2000
2250
2500
2750
3000
S11 (dB)
-2.65
-7.97
-8.57
-8.47
-8.24
-7.79
-7.18
-6.55
-6.03
-5.69
-5.55
-5.68
-5.86
S11 (ang)
S21 (dB)
S21 (ang)
S12 (dB)
S12 (ang)
S22 (dB)
-29.52
17.80
164.25
-24.29
45.18
-8.25
-44.15
15.28
158.50
-21.31
6.75
-19.01
-60.61
14.91
147.54
-21.11
-3.83
-25.15
-80.72
14.60
134.66
-21.11
-10.90
-29.26
-100.99
14.22
121.38
-21.21
-17.00
-30.76
-120.81
13.80
108.59
-21.21
-23.01
-29.83
-138.15
13.27
96.13
-21.41
-28.54
-29.30
-152.70
12.69
84.26
-21.62
-33.67
-29.12
-164.30
12.11
73.25
-21.83
-38.35
-28.24
-173.54
11.57
62.88
-21.99
-42.48
-26.58
176.22
11.12
52.70
-22.10
-46.41
-25.60
166.67
10.76
42.57
-22.16
-50.57
-26.12
153.06
10.40
31.81
-22.27
-55.21
-29.48
Device S-parameters are available for download off of the website at: http://www.tqs.com
S22 (ang)
-39.80
-65.37
-69.25
-84.69
-115.12
-88.78
-94.19
-136.07
-112.00
-97.44
-90.19
-87.80
-82.67
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc  Phone +1-503-615-9000  FAX: +1-503-615-8900  e-mail: [email protected]  Web site: www.TriQuint.com
Page 2 of 5
May 2012
AH1-1
High Dynamic Range Amplifier
Application Circuit: 800 – 2500 MHz (AH1-PCB)
Vcc = +5 V
ID=C5
C=56 pF
Typical RF Performance at 25 C
Frequency
S21 – Gain
S11 – Input R.L.
S22 – Output R.L.
Output P1dB
Output IP3
(+5 dBm / tone, 10 MHz spacing)
IS-95 Channel Power
(@-45 dBc ACPR, 9 channels fwd)
Noise Figure
Device Bias
MHz 900 1900 2140
dB
14.2 12.2 12.0
dB
-21
-14
-21
dB
-14
-13
-11
dBm +21.7 +22 +22
dBm
+42
+41
All passive components are of size 0603 unless otherwise noted.
Component C1 is shown in the silkscreen but is not used for this
configuration.
ID=C2
C=56 pF
Z0=22 Ohm
EL=15.2 Deg
F0=0.9 GHz
+40
ID=C6
C=56 pF
dBm +15.5 +16.5
dB
ID=C4
L=12 nH
ID=Q1
NET="AH1"
ID=C3
L=5.6 nH
3.2
3.3
3.3
+5V @ 150mA
Circuit Board Material: .062” total thickness with a .014” FR-4 top RF layer, 4 layers (other
layers added for rigidity), 1 oz copper, 50 Microstrip line details: width = .025”.
Gain and Output IP3 vs. Temperature
45
14
44
13
43
12
42
Gain
11
41
Output IP3 (dBm)
Gain (dB)
Frequency = 800, 801 MHz @ Pout =5dBm
15
OIP3
10
40
-40
-15
10
35
60
85
Temperature (oC)
P1dB and Noise Figure vs. Temperature
Frequency = 800 MHz
4
22
3
21
2
20
1
P1dB
Noise Figure (dB)
P1dB (dBm)
23
NF
19
0
-40
-15
10
35
60
85
Temperature (oC)
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc  Phone +1-503-615-9000  FAX: +1-503-615-8900  e-mail: [email protected]  Web site: www.TriQuint.com
Page 3 of 5
May 2012
AH1-1
High Dynamic Range Amplifier
250 - 650 MHz Reference Design
Gain / Return Loss
16
250
14.8
-10
-19
450 650
14.5 13.8
-36
-11
-17
-13
+22
+42
2.8
2.8
3.2
+5V @ 150mA
0
DB(|S(1,1)|) (R)
+5V
DB(|S(2,2)|) (R)
C=1000 pF
15
-5
14
-10
13
-15
12
-20
11
S11, S22 (sB)
MHz
dB
dB
dB
dBm
dBm
dB
Gain (dB)
Freq.
Gain
S11
S22
P1dB
OIP3
NF
Bias
DB(|S(2,1)|) (L)
L=82 nH
NET="AH1"
C=1000 pF
L=15 nH
-25
0.2
0.3
0.4
0.5
Frequency (GHz)
0.6
0.7
900 MHz Reference Design
800
900
1000
13.7 13.7 13.6
-13
-16
-18
-13
-14
-15
+22
+41
2.5
+5V @ 150mA
Gain / Return Loss
15
+5 V
0
DB(|S(2,1)|) (L)
DB(|S(1,1)|) (R)
C=100 pF
DB(|S(2,2)|) (R)
14
-5
13
-10
12
-15
11
-20
10
-25
L=100 nH
S11, S22 (dB)
MHz
dB
dB
dB
dBm
dBm
dB
Gain (dB)
Freq.
ain
S11
S22
P1dB
OIP3
NF
Bias
C=100 pF
NET="AH1"
C=100 pF
L=12 nH
0.7
0.8
0.9
Frequency (GHz)
1
1.1
2350 MHz Reference Design
2.3
12.0
-24
-12
2.35 2.4
12.0 11.9
-40
-25
-13
-14
+22
+41
3.7
+5V @ 150mA
+5V
Gain / Return Loss
13
C=56 pF
0
DB(|S(2,1)|) (L)
DB(|S(1,1)|) (R)
DB(|S(2,2)|) (R)
12
-5
11
-10
10
-15
9
-20
8
S11, S22 (sB)
GHz
dB
dB
dB
dBm
dBm
dB
Gain (dB)
Freq.
Gain
S11
S22
P1dB
OIP3
NF
Bias
TLINP
Z0=50 Ohm
L=250 mil
Eeff=3.4
Loss=0
F0=0 GHz
L=22 nH
NET="AH1"
C=56 pF
C=1.2 pF
-25
2.1
2.2
2.3
2.4
Frequency (GHz)
2.5
2.6
3500 MHz Reference Design
3.3
9.8
-10
-16
3.5
3.8
9.9
9.5
-18
-14
-17
-16
+21.6
+41
4.8
4.3
4.1
+5V @ 150mA
+5V
Gain / Return Loss
11
C=18 pF
0
DB(|S(1,1)|) (R)
DB(|S(2,2)|) (R)
DB(|S(2,1)|) (L)
10
-5
9
-10
8
-15
7
-20
6
S11, S22, (dB)
GHz
dB
dB
dB
dBm
dBm
dB
Gain (dB)
Freq.
Gain
S11
S22
P1dB
OIP3
NF
Bias
TLINP
Z0=80 Ohm
L=50 mil
Eeff=3.4
Loss=0
F0=0 GHz
L=12 nH
NET="AH1"
C=18 pF
C=1 pF
-25
3
3.2
3.4
3.6
Frequency (GHz)
3.8
4
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc  Phone +1-503-615-9000  FAX: +1-503-615-8900  e-mail: [email protected]  Web site: www.TriQuint.com
Page 4 of 5
May 2012
AH1-1
High Dynamic Range Amplifier
AH1-1G Mechanical Information
This package is lead-free/Green/RoHS-compliant. It is compatible with both lead-free (maximum 260 C reflow temperature) and leaded
(maximum 245 C reflow temperature) soldering processes. The plating material on the leads is NiPdAu.
Outline Drawing
Product Marking
The AH1-1G will be marked with an “AH1G” designator. An
alphanumeric lot code (“XXXX-X”) is also marked below the
part designator on the top surface of the package. A “1” will be
lasermarked in the upper right-hand corner.
AH1G 1
XXXX-X
ESD / MSL Information
Land Pattern
ESD Rating:
Value:
Test:
Standard:
Class 1B
Passes 500V to <1000V
Human Body Model (HBM)
JEDEC Standard JESD22-A114
ESD Rating:
Value:
Test:
Standard:
Class IV
Passes 1000V to <2000V
Charged Device Model (CDM)
JEDEC Standard JESD22-C101
MSL Rating:
Standard:
Level 1 at +260 C convection reflow
JEDEC Standard J-STD-020
Mounting Config. Notes
1. Ground / thermal vias are critical for the proper performance of this device.
Vias should use a .35mm (#80 / .0135”) diameter drill and have a final plated
thru diameter of .25 mm (.010”).
2. Add as much copper as possible to inner and outer layers near the part to
ensure optimal thermal performance.
3. Mounting screws can be added near the part to fasten the board to a heatsink.
Ensure that the ground / thermal via region contacts the heatsink.
4. Do not put solder mask on the backside of the PC board in the region where
the board contacts the heatsink.
5. RF trace width depends upon the PC board material and construction.
6. Use 1 oz. Copper minimum.
7. All dimensions are in millimeters (inches). Angles are in degrees.
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc  Phone +1-503-615-9000  FAX: +1-503-615-8900  e-mail: [email protected]  Web site: www.TriQuint.com
Page 5 of 5
May 2012
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