TriQuint AH202-PCB2140 1w high linearity amplifier Datasheet

AH202
1W High Linearity Amplifier
Product Features
Product Description
30 – 2200 MHz
Functional Diagram
The AH202 is a 1-Watt driver amplifier that offers
excellent dynamic range in a low-cost, lead-free/RoHScompliant 6x6 mm 28-pin QFN surface-mount package.
This device provides its optimum P1dB and OIP3
performance when biased at + 11 V; It can also be biased
as low as +9 V for lower power applications.
17 dB Gain @ 900 MHz
+30 dBm P1dB
+47 dBm Output IP3
28
Lead-free/RoHS-compliant
6x6mm QFN SMT package
Applications
Mobile Infrastructure
CATV / DBS
Optimal for VHF / UHF
broadband applications
Defense / Homeland Security
The backside metalization provides excellent thermal
dissipation while allowing visible evidence of solder reflow
across the bottom of the package on a SMT board.
Superior thermal design allows the product an MTTF of
over 100 years at a mounting temperature of +85º C. All
devices are 100% RF & DC tested.
Operational Bandwidth
Test Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3 (2)
Noise Figure
IS-95 Channel Power (3)
@ -45dBc ACPR
Operating Current Range
Supply Voltage
24
25
23
22
21
2
20
19 RF OUT
4
18
5
17
6
16
N/C 7
15
8
9
10
12
11
Function
Input
No Connect
Output/Bias
No Connect or
Ground
The product is targeted for use as a driver amplifier for
wireless infrastructure or CATV applications where high
linearity and medium power is required.
13
14
Pin No.
3
7
19
All other pins
Backside
Paddle
Ground
Specifications (1)
Parameters
26
RF IN 3
Single Positive Supply
Internally Matched
27
1
Typical Performance (4)
Units
Min
MHz
MHz
dB
dB
dB
dBm
dBm
dB
30
14
+29
+45
Typ
Max
Parameters
2200
Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
Noise Figure
IS-95 Channel Power
800
17
20
18
+30
+47
2.5
dBm
+24
mA
V
330
+11
WCDMA Channel Power
390
Parameter
Rating
Storage Temperature
DC Voltage
RF Input Power (continuous)
Thermal Resistance, Rth
Maximum Junction Temperature
-55 to +125 C
+13 V
+16 dBm
18 C/W
+160 C
Operation of this device above any of these parameters may cause permanent damage.
Typical
900
17
20
18
+30
+47
2.8
1900
15
17
10
+29.7
+46
3.8
2140
15
8
13
+29.4
+45.5
4.8
dBm
+24
+23
-
dBm
-
-
(3)
@ -45dBc ACPR
1. Test conditions unless otherwise noted: 25ºC, Vdd = 11 V in a 50-Ω unmatched fixture.
2. 3OIP measured with two tones at an output power of +10 dBm/tone separated by 10 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. IS-95, 9 Channels Forward, Pk/Avg Ratio = 11.5 dB at a .001% probability, ±885 kHz offset, 30
kHz bandwidth, Channel BW = 1.23 MHz.
Absolute Maximum Rating
Units
MHz
dB
dB
dB
dBm
dBm
dB
(5)
@ -45dBc ACLR
Supply Bias
+20.5
+11 V @ 330 mA
4. Data reflects performance of a typical AH202 in an application circuit including associated circuit
board and passive component losses.
5. 3GPP W-CDMA, Test Model 1, +32 DPCH, Pk/Avg Ratio = 8.5 dB at a 0.01% probability, ±5
MHz offset, Integrated Channel BW = 3.84 MHz.
Ordering Information
Part No.
Description
AH202-F
1W High Linearity Amplifier
AH202-PCB900
AH202-PCB1900
AH202-PCB2140
900 MHz Evaluation Board
1900 MHz Evaluation Board
2140 MHz Evaluation Board
(lead-free/RoHS-compliant 6x6mm QFN package)
Standard tape / reel size = 500 pieces on a 7” reel
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc
Phone +1-503-615-9000
FAX: +1-503-615-8900
e-mail: [email protected]
Web site: www.TriQuint.com
Page 1 of 7 August 2009
AH202
1W High Linearity Amplifier
Typical Device Data
S-parameters (VDS = +11V, IDS = 330mA, unmatched device in a 50 Ω system).
Measurements are shown for an unmatched packaged device with the data being de-embedded to the device leads.
Return Losses
Gain
0
20
19
-5
18
S11
-10
16
(dB)
S21 (dB)
17
15
S22
-15
14
-20
13
12
-25
11
-30
10
0
0.5
1
1.5
Frequency (GHz)
2
0
2.5
S-Parameters (VDS = +11.0V, IDS = 330mA, T = +25 C, unmatched device in a 50
0.5
1
1.5
Frequency (GHz)
2
2.5
system)
Freq (MHz)
S11 (dB)
S11 (ang)
S21 (dB)
S21 (ang)
S12 (dB)
S12 (ang)
S22 (dB)
S22 (ang)
50
100
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
2400
2600
2800
3000
-17.78
-18.60
-17.34
-14.70
-11.92
-10.29
-9.20
-8.23
-7.74
-7.43
-7.73
-8.76
-10.40
-10.57
-6.72
-3.60
-1.91
-137.86
-153.83
-150.80
-149.17
-159.61
-171.08
174.71
160.52
145.06
127.89
108.79
84.28
43.69
-24.74
-90.87
-136.82
-167.99
18.26
18.06
18.03
17.87
17.43
16.93
16.36
15.90
15.43
15.04
14.82
14.72
14.59
14.42
13.29
10.89
7.61
169.32
166.20
156.86
135.75
115.76
96.20
77.49
58.22
40.52
23.04
4.23
-15.48
-38.77
-65.43
-97.06
-128.44
-154.46
-21.43
-21.34
-21.46
-21.84
-22.34
-22.96
-23.72
-24.54
-25.32
-26.07
-26.69
-26.94
-26.60
-25.80
-25.02
-24.82
-25.13
1.41
-4.54
-12.16
-25.03
-37.49
-48.84
-61.29
-73.36
-85.56
-99.09
-115.15
-132.95
-155.57
176.52
143.13
111.82
87.68
-15.33
-15.51
-16.27
-18.57
-21.38
-26.07
-21.37
-16.16
-12.76
-10.27
-8.39
-7.17
-6.37
-6.14
-6.69
-7.11
-6.73
-170.64
177.37
161.24
135.96
93.89
25.81
-47.34
-78.06
-98.55
-114.42
-129.46
-144.14
-158.61
-172.06
176.96
173.14
174.58
Application Circuit PC Board Layout
Circuit Board Material: .014” Getek ( r=4.2), four layer, 1 oz copper. Microstrip line details: width = .029”, spacing = .036”, total thickness = .062”
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc
Phone +1-503-615-9000
FAX: +1-503-615-8900
e-mail: [email protected]
Web site: www.TriQuint.com
Page 2 of 7 August 2009
AH202
1W High Linearity Amplifier
Reference Design: 50-800 MHz
The AH202 is suitable for applications between 50 – 800 MHz without any requirements for input or output matching. Only
bypass and blocking capacitors and an RF bias choke are needed for operation. A user can simply request an AH202-PCB900
evaluation Board and replace components C1, C2, C3, C6, L1, and L2 to the values shown below to evaluate the device.
Frequency
S21 – Gain
S11 – Input Return Loss
S22 – Output Return Loss
Output P1 dB
Output IP3
MHz 50
200 400
600
800
dB
18.1 17.9 17.6 17.1 16.6
dB -12.6 -17.6 -15.5 -12.9 -10.7
dB -14.8 -17.4 -20.2 -25.9 -21.0
dBm 29.9 30.0 30.1 30.1 30.0
dBm
(+10 dBm / tone, 10 MHz spacing)
Supply Bias
41.5
47.9
dB
47.1
46.1
45.8
+11 V @ 330 mA
+ 11V
CAP
ID=C5
C=1e5 pF
CAP
ID=C4 (0805)
C=1000 pF
PORT
P=1
Z=50 Ohm
CAP
ID=C1
C=1000 pF
IND
ID=L1
L=470 nH
RES
ID=L2
R=0 Ohm
SUBCKT
ID=S1
NET="AH202_F"
PORT
P=2
Z=50 Ohm
CAP
ID=C2
C=1000 pF
-5
18
-10
16
-15
14
-20
12
-25
10
Magnitude S11, S22 (dB)
Magnitude S21 (dB)
Measured S - Parameters
20
-30
0.04
0.24
DB(|S(1,1)|) (R)
AH202 50_800MHz
0.44
Frequency (GHz)
DB(|S(2,1)|) (L)
AH202 50_800MHz
0.64
0.8
DB(|S(2,2)|) (R)
AH202 50_800MHz
Notes:
R=0 Ω (at designator L2) is used as a place holder for a different application circuit. It can be
removed from the circuit without any effect to the performance.
The microstrip line is weakly co-planar. Ground planes around it are not necessary for
operation of the AH202.
Adequate heat sinking is required for the device. Further mounting instructions are shown in
the AH202 datasheet.
The RF choke should be a wirewound ceramic type to insure sufficient current carrying
capacity. Coilcraft’s 1008 CS series is recommended (part #1008CS-471X_B_).
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc
Phone +1-503-615-9000
FAX: +1-503-615-8900
e-mail: [email protected]
Web site: www.TriQuint.com
Page 3 of 7 August 2009
AH202
1W High Linearity Amplifier
Application Circuit: 900 MHz (AH202-PCB900)
Frequency
S21 - Gain
S11
S22
Output P1dB
Output IP3
IS-95A Ch. Power
900 MHz
17 dB
- 20 dB
- 18 dB
+ 30 dBm
+ 47 dBm
Noise Figure
Supply Voltage
Supply Current
CAP
ID=C1
C=100 pF
IND
ID=L2
L=3.3 nH
2.8 dB
+11 V
330 mA
SUBCKT
ID=S1
NET="AH202_F"
CAP
ID=C3
C=100 pF
IND
ID=L1 (1008)
L=33 nH
CAP
ID=C2
C=100 pF
CAP
ID=C6
C=2.7 pF
PORT
P=2
Z=50 Ohm
The amplifier should be connected directly to a +11 V regulator; no dropping resistor is required.
If no DC signal is present at the input (pin 1), C1 can be removed. The gate (input pin) is internally grounded in the amplifier.
Component sizes are 0603 unless otherwise noted. RF choke L1 should be wirewound ceramic type to insure sufficient current carrying
capacity. Coilcraft’s 1008 CS series (part # 1008CS-330X_B) is recommended.
C6 is located at silk screen marker “C” on the WJ evaluation board.
S-Parameters
Vd = +11.0V, Temp = +25°C
20
19
18
17
16
15
14
13
12
11
10
700
0
Noise Figure vs. Frequency
-5
S21
-10
-15
S22
-20
S11
800
900
1000
Frequency (MHz)
Vd = 11.0V, Temp = 25°C
5
Noise Figure (dB)
S21 (dB)
4.
PORT
P=1
Z=50 Ohm
S11 & S22 (dB)
2.
3.
CAP
ID=C4 (0805)
C=1000 pF
+ 24 dBm
@ -45 dBc ACPR
Notes:
1.
CAP
ID=C5 (1206)
C=100000 pF
+ 11V
Typical RF Performance at 25 C
-25
1100
4
3
2
1
0
700
800
900
1000
Frequency (MHz)
1100
OIP3 vs. Pout
ACPR vs. Channel Power
Vd = +11.0V, Temp = +25°C
900 MHz, IS-95 Ch. Fwd. ± 885KHz offset, 30 KHz Meas. BW
-40
-45
50
ACPR (dBc)
OIP3 (dBm)
55
45
40
-50
-55
-60
-65
-70
35
5
7
9
11
13
Pout (dBm)
15
17
-75
15
17
19
21
23
Output Channel Power (dBm)
25
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc
Phone +1-503-615-9000
FAX: +1-503-615-8900
e-mail: [email protected]
Web site: www.TriQuint.com
Page 4 of 7 August 2009
AH202
1W High Linearity Amplifier
Application Circuit: 1900 MHz (AH202-PCB1900)
Typical RF Performance at 25 C
Frequency
S21 - Gain
S11
S22
Output P1dB
Output IP3
IS-95A Ch. Power
1900 MHz
15 dB
- 17 dB
- 10 dB
+ 29.7 dBm
+ 46 dBm
Noise Figure
Supply Voltage
Supply Current
PORT
P=1
Z=50 Ohm
CAP
ID=C3
C=56 pF
IND
ID=L1 (1008)
L=22 nH
TLIN
ID=TL1
Z0=50 Ohm
EL=31 Deg
F0=1900 MHz
CAP
ID=L2
C=2.4 pF
3.8 dB
+11 V
330 mA
CAP
ID=C2
C=56 pF
CAP
ID=C7
C=1.0 pF
PORT
P=2
Z=50 Ohm
The amplifier should be connected directly to a +11 V regulator; no dropping resistor is required.
Component sizes are 0603 unless otherwise noted. RF choke L1 should be wirewound ceramic type to insure sufficient current carrying
capacity. Coilcraft’s 1008 CS series (part # 1008CS-220X_B) is recommended.
C8 is located at silk screen marker “7” on the WJ evaluation board.
16
15
14
13
12
11
10
9
8
7
6
1700
S-Parameters
Noise Figure
Vd = +11.0V, Temp = +25C
Vd = +11.0 V, Temp = +25°C
6
0
S21
-5
-10
S22
-15
S11
-20
1800
1900
2000
2100
-25
2200
Frequency (MHz)
55
5
4
3
2
1
0
1700
1800
1900
Frequency (MHz)
2000
OIP3 vs. Pout
ACPR vs. Channel Power
Vd = +11.0 V, Temp = +25°C
1900 MHz., IS-95 Ch. Fwd, ± 885 KHz offset, 30 KHz Meas. BW
-40
-45
50
ACPR (dBc)
OIP3 (dBm)
SUBCKT
ID=S1
NET="AH202_F"
Noise Figure (dB)
S21 (dB)
3.
CAP
ID=C4 (0805)
C=1000 pF
S11 & S22 (dB)
2.
CAP
ID=C5 (1206)
C=1e5 pF
+ 23 dBm
@ -45 dBc ACPR
Notes:
1.
+ 11V
45
40
-50
-55
-60
-65
-70
35
5
7
9
11
13
15
17
Pout (dBm)
-75
14
16
18
20
22
Output Channel Power (dBm)
24
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc
Phone +1-503-615-9000
FAX: +1-503-615-8900
e-mail: [email protected]
Web site: www.TriQuint.com
Page 5 of 7 August 2009
AH202
1W High Linearity Amplifier
Application Circuit: 2140 MHz (AH202-PCB2140)
Typical RF Performance at 25 C
Frequency
S21 - Gain
S11
S22
Output P1dB
Output IP3
W-CDMA Ch. Power
PORT
P=1
Z=50 Ohm
CAP
ID=L2
C=2.2 pF
CAP
ID=C3
C=56 pF
IND
ID=L1 (1008)
L=22 nH
SUBCKT
ID=S1
NET="AH202_F"
TLIN
ID=TL1
Z0=50 Ohm
EL=28 Deg
F0=2140 MHz
4.8 dB
+11 V
330 mA
Noise Figure
Supply Voltage
Supply Current
CAP
ID=C5 (1206)
C=1e5 pF
CAP
ID=C4 (0805)
C=1000 pF
+ 20.5 dBm
@ -45 dBc ACLR
Notes:
1.
2.
+ 11V
2140 MHz
15 dB
- 8 dB
- 13 dB
+ 29.4 dBm
+ 45.5 dBm
CAP
ID=C2
C=56 pF
CAP
ID=C7
C=1.0 pF
PORT
P=2
Z=50 Ohm
The amplifier should be connected directly to a +11 V regulator; no dropping resistor is required.
If no DC signal is present at the input (pin 1), C1 can be removed. The gate (input pin) is internally grounded in the amplifier.
Component sizes are 0603 unless otherwise noted. RF choke L1 should be wirewound ceramic type to insure sufficient current carrying
capacity. Coilcraft’s 1008 CS series (part # 1008CS-220X_B) is recommended.
C7 is located at silk screen marker “6” on the WJ evaluation board.
3.
4.
S-Parameters
Noise Figure
Vd = +11.0V, Temp = +25°C
16
0
6
-5
5
Vd = + 11V, Temp = 25°C
-10
10
-15
S22
8
-20
6
2000
2100
2200
Frequency (MHz)
4
3
2
1
0
2000
-25
2300
2100
2200
Frequency (MHz)
2300
OIP3 vs. Pout
ACLR vs. Channel Power
Vd = +11.0 V, Temp = +25°C
f = 2140MHz, 3GPP W-CDMA, Test Model 1, +32 DPCH, ±5 MHz offset
-40
50
ACLR (dBc)
OIP3 (dBm)
55
Noise Figure (dB)
S21 (dB)
S11
12
S11 & S22 (dB)
S21
14
45
40
35
-45
-50
-55
-60
5
7
9
11
13
15
17
Pout (dBm)
15
16
17
18
19
20
21
Output Channel Power (dBm)
22
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc
Phone +1-503-615-9000
FAX: +1-503-615-8900
e-mail: [email protected]
Web site: www.TriQuint.com
Page 6 of 7 August 2009
AH202
1W High Linearity Amplifier
Mechanical Information
This package is lead-free/RoHS-compliant. It is compatible with both lead-free (maximum 260 C reflow temperature) and leaded (maximum
245 C reflow temperature) soldering processes. The plating material on the pins is annealed matte tin over copper.
Outline Drawing
Product Marking
The component will be lasermarked with a
“AH202F” product label with an alphanumeric
lot code on the top surface of the package.
Tape and reel specifications for this part will be
located on the website in the “Application
Notes” section.
ESD / MSL Information
Mounting Configuration / Land Pattern
ESD Rating:
Value:
Test:
Standard:
Class 1B
Passes between 500 and 1000V
Human Body Model (HBM)
JEDEC Standard JESD22-A114
ESD Rating:
Value:
Test:
Standard:
Class III
Passes between 500 and 1000V
Charged Device Model (CDM)
JEDEC Standard JESD22-C101
MSL Rating: Level 2 at +260 C convection reflows
Standard:
JEDEC Standard J-STD-020
Functional Pin Layout
Pin
1
2
3
4
5
6
7
8
9
10
11
12
13
14
FUNCTION
GND or N/C
GND or N/C
RF Input
GND or N/C
GND or N/C
GND or N/C
No Connect
GND or N/C
GND or N/C
GND or N/C
GND or N/C
GND or N/C
GND or N/C
GND or N/C
Pin
15
16
17
18
19
20
21
22
23
24
25
26
27
28
FUNCTION
GND or N/C
GND or N/C
GND or N/C
GND or N/C
RF Output
GND or N/C
GND or N/C
GND or N/C
GND or N/C
GND or N/C
GND or N/C
GND or N/C
GND or N/C
GND or N/C
Backside paddle is RF and DC ground.
Pin 7 is required to be not connected or
grounded for the AH202 to be functional.
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc
Phone +1-503-615-9000
FAX: +1-503-615-8900
e-mail: [email protected]
Web site: www.TriQuint.com
Page 7 of 7 August 2009
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