SanRex AK55HB120 Thyristor module Datasheet

THYRISTOR MODULE
AK55HB120/160
UL;E76102
(M)
Power ThyristorModule AK55HB series are designed for various rectifier circuits and
power controls. For your circuit application. following internal connections and wide
voltage ratings up to 1600V are available, and electrically isolated mounting base make
your mechanical design easy.
93.5max
80
2-φ6.5
2
1
K2
G2
3
K1
G1
13
26max
(Applications)
AC/DC motor drives
Heater controls
Light dimmers
Static switches
16.5
23
23
3-M5
Internal Configurations
G2
K2
21
110TAB
30max
Isolated mounting base
● IT(AV)55A, IT(RMS)122A, ITSM 1100A
● di/dt 150 A/μs
● dv/dt 500V/μs
A2・K1
3
1
A1K2
K1 G1
2
Unit:A
■Maximum Ratings
(Tj=25℃ unless otherwise specified)
Symbol
Item
VDRM
Repetitive Peak Off-State Voltage
Symbol
IT(AV)
Ratings
AK55HB120
1200
Item
Conditions
Average On-State Current
Single phase, half wave, 180°conduction, Tc:85℃
IT(RMS)
R.M.S. On-State Current
Tc:85℃
ITSM
Surge On-State Current
1/cycle,
2
It
Value for one cycle of surge current
It
2
2
Unit
AK55HB160
1600
50Hz/60Hz, peak value, non-reqetitive
V
Ratings
Unit
55
A
122
A
1000/1100
5000
A
A2S
PGM
Peak Gate Power Dissipation
10
W
PG(AV)
Average Gate Power Dissipation
3
W
IFGM
Peak Gate Current
3
A
VFGM
Peak Gate Voltage(Forwad)
10
V
Peak Gate Voltage(Reverse)
5
V
VRGM
di/dt
VISO
Critical Rate of Rise of On-State Current
IG=100mA,Tj=25℃,VD=1/2VDRM,dIG/dt=0.1A/μs
Isolation Breakdown Voltage (R.M.S.)
A.C. 1 minute
2500
V
Tj
Operating Junction Temperature
−40 to +125
℃
Storage Temperature
Tstg
Mounting
Torque
150
A/μs
−40 to +125
℃
Mounting(M6) Recommended Value 2.5-3.9(25-40)
4.7(48)
Terminal(M5)
2.7(28)
N・m
(㎏f・B)
170
g
Ratings
Unit
Mass
Recommended Value 1.5-2.5(15-25)
Typical Value
■Electrical Characteristics
Symbol
Item
Conditions
IDRM
Repetitive Peak Off-State Current, max.
at VDRM, Single phase, half wave, Tj=125℃
VTM
Peak On-State Voltage max.
On-State Current 165A, Tj=125℃Inst. measurement
IGT/VGT
VGD
Gate Trigger Current/Voltage, max.
Non-Trigger Gate, Voltage. min.
Tj=25℃,IT=1A,VD=6V
Turn On Time, max.
IT=55A,IG=100mA,Tj=25℃,VD=1/2VDRM,dIG/dt=0.1A/μs
Critical Rate of Rise of Off-State Voltage, min.
Tj=125℃,VD=2/3VDRM,Exponential
Holding Current, typ.
Tj=25℃
Lutching Current, typ.
tgt
dv/dt
IH
IL
Rth(j-c) Thermal Impedance, max.
SanRex
Tj=125℃,VD=1/2VDRM
20
mA
1.50
V
100/2
0.25
mA/V
V
10
μs
500
V/μs
50
mA
Tj=25℃
100
mA
Junction to case, per 1/2 Module
0.50
Junction to case, per 1 Module
0.25
wave.
℃/W
®
50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: [email protected]
;;
;;
AK55HB120/160
Gate Characteristics
Ga
te
2
Po
we
(
r
3W
)
100
5
25℃
125℃
2
−30℃
2
102
5
2
101
5
Maximum Gate Voltage that will not trigger any unit(0.25V)
ー1
10
101
2
5
102
2
103
5
Tj=125℃
2
2
5
0.
5
1.
0
Average On-State Current Vs Power Dissipation
(Single phase half wave)
Per one element
Allowable Case Temperature(℃)
120
140
D.C.
Power Dissipation(W)
2.
5
3.
0
Average On-State Current Vs Maximum Allowable
Case Temperature(Single phase half wave)
Per one element
2
θ=120゜
θ=90゜
θ=60゜
60
θ=30゜
2
40
。
360
20
: Conduction Angle
10
20
30
40
50
。
360
100
θ=180゜
80
0
0
60
70
80
60
θ=90゜
θ=30゜
θ=60゜
40
D.C.
θ=180゜
θ=120゜
20
90 100
0
10
20
30
40
50
60
70
80
90 100
Average On-State Current(A)
Transient Thermal Impedance θj-c(℃/W)
Surge On-State Current Rating
(Non-Repetitive)
Transient Thermal Impedance
0.
6
Per one element
Tj=25℃ start
1000
: Conduction Angle
80
Average On-State Current(A)
Surge On-State Current(A)
2.
0
120
100
0.
5
100 2
5 101
Junction to Case
Per one element
0.
4
800
60Hz
600
0.
3
50Hz
0.
2
400
0.
1
200
0
1
2
5
10
20
50
100
Total Power Dissipation(W)
Output Current
W1;Bidirectional connection
W3
Conduction Angle 180°
Id(RMS)
ld(Ar.m.s)
400
Rth:0.8C/W
Rth:0.6C/W
Rth:0.4C/W
Rth:0.2C/W
Rth:0.1C/W
300
200
W1
100
0
0
50
100
150
Output Current(A)
90
100
110
120
125
0 25 50 75 100125
Ambient Temperature(℃)
Allowable Case Temperature(℃)
Time(cycles)
500
1.
5
On-State Voltage(V)
Gate Current(mA)
0
10ー3 2
5 10ー2 2
W3;Three phase
bidiretional connection
90
5 10ー1 2
Time t(sec)
5 100
RMS On-State Current Vs
Allowable Case Temperature
Rth:0.8C/W
Rth:0.6C/W
Rth:0.4C/W
Rth:0.2C/W
Rth:0.1C/W
120
110
θ=30゜
100
θ=60゜
θ=90゜
90
θ=120゜
θ=180゜
100
80
110
Id(Ar.m.s.)
70
60
120
125
130
0 25 50 75 100125
50
0 20 40 60 80 100120140
Ambient Temperature(℃) RMS On-State Current(A)
Allowable Case Temperature(℃)
Gate Voltage(V)
5
P
Po eak
we Ga
(
t
r
10 e
W
)
On-State Current(A)
Peak Forward Gate Voltag(10V)
Av
er
ag
e
101
On-State Voltage max
5
Peak Gate Current(3A)
2
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