ALD ALD110804SC Quad/dual n-channel enhancement mode epad matched pair mosfet array Datasheet

e
ADVANCED
LINEAR
DEVICES, INC.
EN
APPLICATIONS
ALD110804/ALD110904 are monolithic quad/dual N-Channel MOSFETs
matched at the factory using ALD’s proven EPAD® CMOS technology.
These devices are intended for low voltage, small signal applications.
The ALD110804/ALD110904 MOSFETs are designed and built for exceptional device electrical characteristics matching. Since these devices
are on the same monolithic chip, they also exhibit excellent tempco tracking
characteristics. They are versatile circuit elements useful as design components for a broad range of analog applications, such as basic building
blocks for current sources, differential amplifier input stages, transmission gates, and multiplexer applications. For most applications, connect
V- and N/C pins to the most negative voltage potential in the system and
V+ pin to the most positive voltage potential (or left open unused). All
other pins must have voltages within these voltage limits.
• Ultra low power (nanowatt) analog and digital
circuits
• Ultra low operating voltage(<0.4V) circuits
• Sub-threshold biased and operated circuits
• Precision current mirrors and current sources
• Nano-Amp current sources
• High impedance resistor simulators
• Capacitive probes and sensor interfaces
• Differential amplifier input stages
• Discrete Voltage comparators and level shifters
• Voltage bias circuits
• Sample and Hold circuits
• Analog and digital inverters
• Charge detectors and charge integrators
• Source followers and High Impedance buffers
• Current multipliers
• Discrete Analog switches / multiplexers
The ALD110804/ALD110904 devices are built for minimum offset voltage
and differential thermal response, and they are suited for switching and
amplifying applications in <+0.1V to +10V systems where low input bias
current, low input capacitance and fast switching speed are desired, as
these devices exhibit well controlled turn-off and sub-threshold characteristics and can be biased and operated in the sub-threshold region.
Since these are MOSFET devices, they feature very large (almost infinite) current gain in a low frequency, or near DC, operating environment.
The ALD110804/ALD110904 are suitable for use in very low operating
voltage or very low power (nanowatt), precision applications which require very high current gain, beta, such as current mirrors and current
sources. The high input impedance and the high DC current gain of the
Field Effect Transistors result from extremely low current loss through
the control gate. The DC current gain is limited by the gate input leakage
current, which is specified at 30pA at room temperature. For example,
DC beta of the device at a drain current of 3mA and input leakage current
of 30pA at 25°C is = 3mA/30pA = 100,000,000.
PIN CONFIGURATION
ALD110804
N/C*
1
GN1
2
DN1
4
V-
5
FEATURES
DN4
6
• Enhancement-mode (normally off)
• Precision Gate Threshold Voltage of +0.40V
• Matched MOSFET to MOSFET characteristics
• Tight lot to lot parametric control
• Low input capacitance
• VGS(th) match (VOS) to 10mV
• High input impedance — 1012Ω typical
• Positive, zero, and negative VGS(th) temperature coefficient
• DC current gain >108
• Low input and output leakage currents
GN4
7
N/C*
8
ORDERING INFORMATION
Operating Temperature Range*
0°C to +70°C
0°C to +70°C
ALD110804SC
8-Pin
Plastic Dip
Package
ALD110904PA
8Pin
SOIC
Package
V-
V-
M1
3
S12
ALD110804PC
AB
LE
D
VGS(th)= +0.4V
GENERAL DESCRIPTION
16-Pin
SOIC
Package
®
ALD110804/ALD110904
QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD®
MATCHED PAIR MOSFET ARRAY
16-Pin
Plastic Dip
Package
TM
EPAD
M2
V+
VM4
M3
V-
V-
16
N/C*
15
GN2
14
DN2
13
V+
12
S34
11
DN3
10
GN3
9
N/C*
PC, SC PACKAGES
ALD110904
N/C*
1
GN1
2
DN1
3
S12
4
V-
V-
M1
M2
V-
8
N/C*
7
GN2
6
DN2
5
V-
PA, SA PACKAGES
*N/C pins are internally connected.
Connect to V- to reduce noise
ALD110904SA
* Contact factory for industrial or military temp. ranges or user-specified threshold voltage values.
Rev 1.0-0506 ©2 005 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089-1706 Tel: (408) 747-1155 Fax: (408) 747-1286
www.aldinc.com
ABSOLUTE MAXIMUM RATINGS
Drain-Source voltage, VDS
Gate-Source voltage, VGS
Power dissipation
Operating temperature range PA, SA, PC, SC package
Storage temperature range
Lead temperature, 10 seconds
10.6V
10.6V
500 mW
0°C to +70°C
-65°C to +150°C
+260°C
OPERATING ELECTRICAL CHARACTERISTICS
V+ = +5V (or open) V- = GND TA = 25°C unless otherwise specified
CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.
ALD110804 / ALD110904
Parameter
Symbol
Gate Threshold Voltage
VGS(th)
Offset Voltage
VGS(th)1-VGS(th)2
Max
Unit
Test Conditions
0.40
0.42
V
IDS =1µA
VDS = 0.1V
VOS
2
10
Offset VoltageTempco
TC ∆VOS
5
µV/ °C
VDS1 = VDS2
GateThreshold Voltage Tempco
TC∆VGS(th)
-1.7
0.0
+1.6
mV/ °C
ID = 1µA
ID = 20µA, VDS = 0.1V
ID = 40µA
On Drain Current
IDS (ON)
12.0
3.0
mA
VGS = + 9.7V
VGS = + 4.2V
VDS = +5V
Forward Transconductance
GFS
1.4
mmho
VGS = + 4.2V
VDS = + 9.2V
Transconductance Mismatch
∆GFS
1.8
%
Output Conductance
GOS
68
µmho
VGS =+4.2V
VDS = +9.2V
Drain Source On Resistance
RDS (ON)
500
Ω
VDS = 0.1V
VGS = +4.2V
Drain Source On Resistance
Mismatch
∆RDS (ON)
0.5
%
Drain Source Breakdown
Voltage
BVDSX
10
V
IDS = 1.0µA
VGS = -0.8V
Drain Source Leakage Current1
IDS (OFF)
10
100
4
pA
nA
VGS = -0.8V
VDS =10V, TA = 125°C
Gate Leakage Current1
IGSS
3
30
1
pA
nA
VDS = 0V VGS = 10V
TA =125°C
Input Capacitance
CISS
2.5
pF
Transfer Reverse Capacitance
CRSS
0.1
pF
Turn-on Delay Time
ton
10
ns
V+ = 5V RL= 5KΩ
Turn-off Delay Time
toff
10
ns
V+ = 5V RL= 5KΩ
60
dB
f = 100KHz
Crosstalk
Notes:
1
Min
0.38
Typ
mV
Consists of junction leakage currents
ALD110804/ALD110904
Advanced Linear Devices
2
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