ALD ALD110900PA Quad/dual n-channel zero threshold epad matched pair moset array Datasheet

e
ADVANCED
LINEAR
DEVICES, INC.
EN
FEATURES
ALD110800A/ALD110800/ALD110900A/ALD110900 are monolithic
quad/dual N-Channel MOSFETs matched at the factory using ALD’s
proven EPAD® CMOS technology. These devices are intended for low
voltage, small signal applications. The ALD110800/ALD110900 features
zero threshold voltage, which reduces or eliminates input to output
voltage level shift, including circuits where the signal is referenced to
GND or V+. This feature greatly reduces output signal voltage level
shift and enhances signal operating range, especially for very low
operating voltage environments. With these zero threshold devices an
analog circuit with multiple stages can be constructed to operate at
extremely low supply or bias voltage levels. As an example, an input
amplifier stage operating at 0.2V supply voltage has been demonstrated.
• Precision zero threshold voltage mode
• Nominal RDS(ON) @VGS=0.0V of 104KΩ
• Matched MOSFET to MOSFET characteristics
• Tight lot to lot parametric control
• VGS(th) match (VOS) to 2mV and 10mV
• Positive, zero, and negative VGS(th) tempco
• Low input capacitance
• Low input/output leakage currents
ALD110800A/ALD110800/ALD110900A/ALD110900 matched pair
MOSFETs are designed for exceptional device electrical characteristics matching. As these devices are on the same monolithic chip, they
also exhibit excellent tempco tracking characteristics. They are
versatile as design components for a broad range of analog applications such as basic building blocks for current sources, differential
amplifier input stages, transmission gates, and multiplexer applications.
Besides matched pair electrical characteristics, each individual
MOSFET also exhibits well controlled parameters, enabling the user
to depend on tight design limits. Even units from different batches
and different date of manufacture have correspondingly well matched
characteristics.
These devices are built for minimum offset voltage and differential
thermal response, and they are designed for switching and amplifying
applications in +0.2V to +10V systems where low input bias current,
low input capacitance and fast switching speed are desired. The VGS(th)
of these devices are set at +0.0V, which classify them as both enhancement mode and depletion mode devices. When the gate is set at 0.0V,
the drain current = +1µA @ VDS =1+0.1V, which allow a class of circuits
with output voltage level biased at or near input voltage level without
voltage level shift. These devices exhibit same well controlled turn-off
and sub-threshold characteristics as standard enhancement mode
MOSFETs.
The ALD110800A/ALD110800/ALD110900A/ALD110900 are MOSFET
devices that feature high input impedance (1012Ω) and high DC current
gain (>108 ). A sample calculation of the DC current gain at a drain
current of 3mA and input leakage current of 30pA at 25°C is = 3mA/
30pA = 100,000,000. For most applications, connect V+ pin to the most
positive voltage potential (or left open unused) and V- and N/C pins to
the most negative voltage potential in the system. All other pins must
have voltages within these voltage limits.
APPLICATIONS
• Very low voltage analog and digital circuits
• Zero power fail safe circuits
• Backup battery circuits & power failure detector
• Low level voltage clamp & zero crossing detector
• Source followers and buffers
• Precision current mirrors and current sources
• Capacitives probes and sensor interfaces
• Charge detectors and charge integrators
• Differential amplifier input stage
• High side switches
• Peak detectors and level shifters
• Sample and Hold
• Current multipliers
• Analog switches / multiplexers
• Voltage comparators and level shifters
PIN CONFIGURATION
ALD110800
N/C*
1
GN1
2
DN1
3
S12
4
V-
5
DN4
6
GN4
7
N/C*
8
8-Pin
Plastic Dip
Package
8-Pin
SOIC
Package
ALD110800ASC ALD110900APA ALD110900ASA
ALD110800SC ALD110900PA ALD110900SA
* Contact factory for industrial temp. range or user-specified threshold voltage values
V-
M1
M2
V+
VM4
M3
16
N/C*
15
GN2
14
DN2
13
V+
12
S34
11
DN3
10
9
V-
V-
GN3
N/C*
ALD110900
N/C*
Operating Temperature Range*
0°C to +70°C
0°C to +70°C
V-
PC, SC PACKAGES
ORDERING INFORMATION
ALD110800APC
ALD110800PC
AB
LE
D
VGS(th)= +0.0V
GENERAL DESCRIPTION
16-Pin
SOIC
Package
®
ALD110800/ALD110800A/ALD110900/ALD110900A
QUAD/DUAL N-CHANNEL ZERO THRESHOLD™ EPAD®
MATCHED PAIR MOSFET ARRAY
16-Pin
Plastic Dip
Package
TM
EPAD
1
GN1
2
DN1
3
S12
4
V-
V-
M1
M2
V-
8
N/C*
7
GN2
6
DN2
5
V-
PA, SA PACKAGES
*N/C pins are internally connected.
Connect to V- to reduce noise
Rev 1.0-0506 ©2005 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089-1706 Tel: (408) 747-1155 Fax: (408) 747-1286
www.aldinc.com
ABSOLUTE MAXIMUM RATINGS
Drain-Source voltage, VDS
Gate-Source voltage, VGS
Power dissipation
Operating temperature range PA, SA, PC, SC package
Storage temperature range
Lead temperature, 10 seconds
10.6V
10.6V
500 mW
0°C to +70°C
-65°C to +150°C
+260°C
OPERATING ELECTRICAL CHARACTERISTICS
V+ = +5V (or open) V- = GND TA = 25°C unless otherwise specified
CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.
ALD110800A / ALD110900A
Parameter
Symbol
Gate Threshold Voltage
VGS(th)
Offset Voltage
VGS(th)1-VGS(th)2
ALD110800/ ALD110900
Min
Typ
Max
Min
Typ
-0.01
0.00
0.01
-0.02
0.00
0.02
VOS
1
2
2
10
Offset Voltage Tempco
TCVOS
5
5
µV/°C
VDS1 = VDS2
GateThreshold Voltage Tempco
TCVGS(th)
-1.7
0.0
+1.6
-1.7
0.0
+1.6
mV/°C
ID = 1µA, VDS = 0.1V
ID = 20µA, VDS = 0.1V
ID = 40µA, VDS = 0.1V
On Drain Current
IDS (ON)
12.0
3.0
12.0
3.0
mA
VGS = +9.5V, VDS = +5V
VGS = +4.0V, VDS = +5V
Forward Transconductance
GFS
1.4
1.4
mmho
VGS = +4.0V
VDS = +9.0V
Transconductance Mismatch
∆GFS
1.8
1.8
%
Output Conductance
GOS
68
68
µmho
VGS = +4.0V
VDS = +9.0V
Drain Source On Resistance
RDS (ON)
500
500
Ω
VDS = +0.1V
VGS = +4.0V
Drain Source On Resistance
RDS (ON)
104
104
KΩ
VDS = +0.1V
VGS = +0.0V
Drain Source On Resistance
Tolerance
∆RDS (ON)
5
5
%
VDS = +0.1V
VGS = +4.0V
Drain Source On Resistance
Mismatch
∆RDS (ON)
0.5
0.5
%
Drain Source Breakdown
Voltage
BVDSX
Drain Source Leakage Current1
IDS (OFF)
10
Max
10
10
400
10
4
Unit
Test Conditions
V
IDS =1µA, VDS = 0.1V
mV
V
IDS = 1.0µA
V-= VGS = -1.0V
400
pA
4
nA
VGS = -1.0V, VDS =+5V
V- = -5V
TA = 125°C
30
1
pA
nA
VDS = 0V VGS = +10V
TA =125°C
Gate Leakage Current1
IGSS
5
Input Capacitance
CISS
2.5
2.5
pF
Transfer Reverse Capacitance
CRSS
0.1
0.1
pF
Turn-on Delay Time
ton
10
10
ns
V+ = 5V RL= 5KΩ
Turn-off Delay Time
toff
10
10
ns
V+ = 5V RL= 5KΩ
60
60
dB
f = 100KHz
Crosstalk
Notes:
1
30
1
5
Consists of junction leakage currents
ALD110800/ALD110800A/ALD110900/ALD110900A
Advanced Linear Devices
2
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