AVAGO ALM-1106-TR1 Gps low noise amplifier with variable bias current and shutdown function Datasheet

ALM-1106
GPS Low Noise amplifier with Variable bias current and
Shutdown function
Data Sheet
Description
Features
Avago Technologies’s ALM-1106 is a LNA
designed for GPS/ISM/Wimax applications in
the (0.9-3.5)GHz frequency range. The LNA
uses Agilent Technologies’s proprietary GaAs
Enhancement-mode pHEMT process to achieve
high gain operation with very low noise figures
and high linearity. Noise figure distribution is
very tightly controlled. Gain and supply current
are guaranteed parameters. A CMOS compatible
shutdown pin is included to turn the LNA off
and provide a variable bias.
• Advanced GaAs E-pHEMT
The ALM-1106 LNA is useable down to 1V
operation. It achieves low noise figures and
high gain even at 1V, making it suitable for
use in critical low power GPS/ISM band
applications.
• Adjustable bias current via one single external
resistor/voltage
• High Gain : 14.3 dB typ
• Low component count
• High IIP3 and IP1dB
• Wide Supply Voltage: 1V to 3.6V
• Shutdown current : < 0.1uA
• CMOS compatible shutdown pin (VSD) current @ 2.85V
: 90uA
• Small Footprint: 2x2mm2
• Low Profile: 1.1mm typ
• Ext matching for non-GPS freq band operation
Simplified Schmatic
VSD
• Low Noise: 0.8 dB typ
VDD
Specifications (25 deg): At 1.575GHz, 2.85V 8mA (Typ)
• Gain = 14.3 dB (Typ)
BIAS
• NF = 0.8 dB (Typ)
• IIP3 = 4.7 dBm (Typ)
RF_IN C
C1
Amplifier2
AMP1
Surface Mount
2.0 x 2.0 x 1.1 mm3
C
C2
RF_OUT
• IP1dB = 1.8 dBm (Typ)
• S11 = -11.8 dB (Typ)
Pin 6
O
AY
WW
• S22 = -12.4 dB (Typ)
Pin Configuration
Pin 5
Pin 1
GND
Pin 2
S21 = 12.3dB
NF = 1.0dB
Pin 3
Pin 4
Bottom View
Note:
Package marking
provides Orientation
and identification
“A” = Product Code
“Y” = Year
“WW” = Work Week
Typical performance @ 1.0V supply
LNA I/O’s :
1. NC
4. VSD
2. RF_IN
5. RF_OUT
3. NC
6. VDD
BOTTOM PADDLE : GND
Ids = 3.6mA
Note:
Measurements obtained using demoboard described in Figure 4.
Absolute Maximum Ratings [1]
Symbol
Parameter
Units
Absolute Maximum
VDS
Drain - Source Voltage[2]
V
3.6
IDS
Drain Current[2]
mA
15
Pdiss
Total Power Dissipation [3]
mW
54
Pin max.
RF Input Power
dBm
+10
TCH
Channel Temperature
°C
150
TSTG
Storage Temperature
°C
-65 to 150
θch_b
Thermal Resistance [4]
°C/W
232
Notes:
1. Operation of this device above any
one of these parameters may cause permanent damage.
2. Assuming DC quiescent conditions.
3. Board (package belly) temperature TB is 25°C. Derate 4.32mW/°C for TB > 137 °C.
4. Channel-to-board thermal resistance measured using 150°C Liquid Crystal Measurement method.
Product Consistency Distribution Charts [5,6]
4000
4000
Stdev = 0.4
3000
2000
-3 Std
3000
Stdev = 0.1
2000
+3 Std
1000
+3 Std
1000
0
0
12
13
14
15
16
17
Figure 1. Gain @ 1.575GHz; LSL = 12.7dB, Nominal = 14.3dB, USL =
15.8dB
0
0.3
0.6
0.9
1.2
1.5
Figure 2. NF @ 1.575GHz; Nominal = 0.8dB, USL = 1.3dB
3000
2500
Stdev = 1.8
2000
1500
+3 Std
1000
500
0
3
5
7
9
11
13
15
Figure 3. Ids @ 1.575GHz; Nominal = 8mA, USL = 13mA
Notes:
5. Distribution data sample size is 10K samples taken from 3 different wafers and 3 different lots. Future wafers allocated to this product may have
nominal values anywhere between the upper and lower limits.
6. Measurements are made on production test board, which represents a trade-off between optimal Gain, NF, IIP3, IP1dB and VSWR. Circuit losses
have been de-embedded from actual measurements.
2
Electrical Specifications
TA = 25 °C, DC bias for RF parameter is VDD = VSD = +2.85V @ 8mA (unless otherwise specified)
VDD= VSD = +2.85V, R1 = 18K Ohm, Freq=1.575GHz – Typical Performance
Table 1. Performance table at nominal operating conditions
Symbol
Parameter and Test Condition
Units
Min.
Typ
Max.
G
Gain
dB
12.7
14.3
15.8
NF
Noise Figure
dB
-
0.8
1.3
IP1dB
Input 1dB Compressed Power
dBm
1.8
IIP3
Input 3rd Order Intercept Point
(2-tone @ Fc +/- 2.5MHz)
dBm
4.7
S11
Input Return Loss
dB
-11.8
S22
Output Return Loss
dB
- 12.4
Ids
Supply Current
mA
8
Ish
Shutdown Current @ VSD = 0V
uA
0.1
Vds
Supply Voltage
V
2.85
IP1dB1710M
Out of Band IP1dB (DCS 1710MHz) blocking
dBm
2.9
IIP3OUT
Out of Band IIP3 (DCS 1775MHz & 1950MHz)
dBm
5.5
13
VDD = +2V, VDD= +1.5V & VDD= +1.0V, Freq=1.575GHz – Typical Performance (VSD=VDD, R1=0 Ohm)
Table 2 – Typical performance at low operation voltages with R1 (see Fig 5) set to 0 Ohm
Symbol
Parameter and Test Condition
Units
VDD=2V VDD=1.5V
VDD=1.0V
G
Gain
dB
15
14.2
12.3
NF
Noise Figure
dB
0.8
0.9
1
IP1dB
Input 1dB Compressed Power
dBm
-1.4
-2.4
-3.8
IIP3
Input 3rd Order Intercept Point
(2-tone @ Fc +/- 2.5MHz)
dBm
7.3
4.9
5.2
S11
Input Return Loss
dB
-13.8
-11.5
-8
S22
Output Return Loss
dB
-15.5
-14.5
-11.7
Ids
Supply Current
mA
13
7.5
3.6
Ish
Shutdown Current @ VSD = 0V
uA
0.1
0.1
0.1
Vds
Supply Voltage
V
2
1.5
1.0
IP1dB1710M
Out of Band IP1dB (DCS 1710MHz) blocking
dBm
-0.3
-1.9
-2.9
IIP3OUT
Out of Band IIP3 (DCS 1775MHz & 1950MHz)
dBm
8.7
5.8
3
3
GND
SD
VDD
GND
H 0.010
W 0.0220
e 3.48
0.1µF
12Ω / / 33nH
6.8pF
4.7nH
RF IN
100pF
5.6nH
RF OUT
18k
10nH
6.8pF
MAR 2005 TL.
Agilent
Technologies
GPS LNA
Figure 4. Demoboard and Application Circuit Components
+VDD
C
C3
C=0.1 uF
C
C5
C=6.8 pF
C
C4
C=6.8 pF
VSD
PRL
PRL1
R=12 Ohm
L=33 nH
Johanson 0402
R
R1
R=18 kOhm
L
L3
L=4.7 nH
R=
Toko LL1005
BIAS
RF_OUT
RF_IN
L
L1
L=5.6 nH
Johanson 0402
L
L2
L=10 nH
Johanson 0402
Figure 5. Demoboard schematic
4
C
C1
Amplifier2
AMP1
C
C2
Notes
• L1 and L2 form the input matching network.
The LNA module has a integrated coupling
and DC-blocking capacitors at the input and
output. Best noise performance is obtained
using high-Q wirewound inductors. This
circuit demonstrates that low noise figures
are obtainable with standard 0402 chip
inductors. Replacing L1, L2 and L3 with highQ wirewound inductors (eg. Cilcraft 0402CS
series) will yield 0.1dB lower NF and 0.6dB
higher Gain.
• L3 is an output matching inductor.
• C5 is a RF bypass capacitor.
• PRL1 is a network that isolates the
measurement demoboard from external
disturbances. C3 and C4 mitigates the effect
of external noise pickup on the VSD and VDD
lines. These components are not required in
actual operation.
• Bias control is achieved by either varying the
VSD voltage without R1 or fixing the VSD
voltage to VDD and varying R1. Typical value
for R1 is 18k Ohm for 8mA total current at
VDD=+2.85V.
• Higher gain and IP3 performance can be
obtained by increasing the supply current.
This can be achieved by reducing the value
for R1 to obtain desired current.
• For low voltage operation such as 1.5V or
1.0V, the R1 may be omitted and VSD
connected directly to the supply pins.
ALM-1106 Typical Performance Curves, R1 = 18K Ohm (At 25°C unless specified otherwise)
16
0.95
15
0.9
Gain (dB)
14
NF (dB)
13
12
10
0.8
1.575GHz
1.575GHz
2GHz
11
0.85
2GHz
0.75
2.4GHz
2.4GHz
0.7
9
2.4
2.6
2.8
3
3.2
3.4
2.4
2.6
2.8
Vdd (V)
Figure 6. Gain vs Vdd vs Freq
3.2
3.4
Figure 7. NF vs Vdd vs Freq
6
10
5
8
4
IP1dB (dBm)
12
IIP3 (dBm)
3
Vdd (V)
6
4
1.575GHz
2GHz
2
1.575GHz
2GHz
2.4GHz
3
2
1
2.4GHz
0
0
2.4
2.6
2.8
3
3.2
3.4
2.4
2.6
Figure 8. IIP3 vs Vdd vs Freq
Figure 9. IP1dB vs Vdd vs Freq
12
10
Ids (mA)
8
6
1.575GHz
4
2GHz
2.4GHz
2
0
2.4
2.6
2.8
3
Vdd (V)
Figure 10. Ids vs Vdd vs Freq
5
2.8
3
Vdd (V)
Vdd (V)
3.2
3.4
3.2
3.4
ALM-1106 Typical Performance Curves, R1 = 18K Ohm (At 25°C unless specified otherwise)
16
1.4
1.2
15
NF (dB)
Gain (dB)
1
14
25 deg
13
-40 deg
12
0.8
0.6
0.4
25 deg
-40 deg
85 deg
85 deg
0.2
11
2.4
2.6
2.8
3
3.2
0
3.4
2.4
2.6
2.8
Vdd (V)
Figure 11. Gain vs Vdd vs Temp
7
3
6
2.5
IP1dB (dBm)
IIP3 (dBm)
4
3
25 deg
-40 deg
85 deg
2
1
3.4
3
3.2
3.4
2
1.5
1
25 deg
-40 deg
0.5
85 deg
0
0
2.4
2.6
2.8
3
3.2
3.4
2.4
2.6
2.8
Vdd (V)
Vdd (V)
Figure 14. IP1dB vs Vdd vs Temp
Figure 13. IIP3 vs Vdd vs Temp
12
11
10
Ids (mA)
3.2
Figure 12. NF vs Vdd vs Temp
5
9
8
7
25 deg
6
-40 deg
85 deg
5
4
2.4
2.6
2.8
3
Vdd (V)
Figure 15. Ids vs Vdd vs Temp
6
3
Vdd (V)
3.2
3.4
ALM-1106 Typical Scattering Parameters at 25°C, VDD = 2.85V, IDS = 8 mA
Freq.
S11
S21
S12
S22
(GHz)
Mag.
Ang.
(dB)
Mag.
Ang.
(dB)
Mag.
Ang.
Mag.
Ang.
0.1
0.998
-4.7
15.01
5.633
176.7
-47.96
0.004
89.2
0.526
-5
0.5
0.946
-23.5
14.62
5.381
153.1
-34.42
0.019
78.6
0.503
-19
0.9
0.866
-40.4
13.72
4.854
134.1
-29.90
0.032
71.8
0.475
-31.9
1
0.843
-44.4
13.47
4.714
129.7
-29.37
0.034
70.5
0.468
-34.9
1.1
0.821
-48.2
13.20
4.573
125.5
-28.64
0.037
69.3
0.459
-37.9
1.2
0.8
-52
12.95
4.44
121.5
-27.96
0.04
68.5
0.451
-40.5
1.3
0.78
-55.8
12.69
4.31
117.6
-27.33
0.043
67.4
0.443
-43.2
1.4
0.757
-59.7
12.42
4.178
113.6
-26.94
0.045
66.5
0.435
-45.8
1.5
0.731
-63.4
12.13
4.039
109.7
-26.38
0.048
65.7
0.428
-48.2
1.6
0.705
-66.8
11.83
3.905
106.1
-26.02
0.05
64.8
0.421
-50.7
1.7
0.683
-69.7
11.55
3.78
102.9
-25.51
0.053
64.7
0.414
-52.8
1.8
0.663
-71.6
11.29
3.669
99.5
-25.19
0.055
63.9
0.408
-55.5
1.9
0.643
-73.4
10.99
3.544
96
-24.73
0.058
63.1
0.399
-58
2
0.623
-75.3
10.48
3.343
97
-24.58
0.059
66.3
0.398
-58.8
2.1
0.603
-77.2
10.25
3.253
93.5
-24.15
0.062
65.5
0.398
-59.6
2.2
0.583
-79
10.01
3.165
90.2
-23.74
0.065
64.6
0.397
-60.3
2.3
0.563
-80.9
9.77
3.079
87
-23.48
0.067
63.8
0.396
-61.1
2.4
0.543
-82.8
9.49
2.983
83.8
-23.10
0.07
63
0.396
-62.1
2.5
0.522
-85.3
9.23
2.895
81.1
-22.73
0.073
62.3
0.395
-62.7
3
0.434
-105.2
7.95
2.498
66.6
-21.21
0.087
56.9
0.345
-74.4
3.5
0.334
-119.5
6.47
2.105
57.3
-20.26
0.097
54
0.324
-86.8
4
0.302
-132.1
6.25
2.054
48.8
-18.42
0.12
53.7
0.271
-108
4.5
0.297
-141.8
5.50
1.883
33.1
-16.95
0.142
43.4
0.265
-113.3
5
0.274
-157.1
4.44
1.667
23.9
-15.97
0.159
38
0.259
-118.6
5.5
0.254
-170.1
3.63
1.519
16.1
-15.04
0.177
33.7
0.26
-133.2
6
0.211
178.7
2.82
1.383
6.3
-14.11
0.197
25.3
0.249
-142.7
6.5
0.204
165.4
1.89
1.243
-0.7
-13.64
0.208
16.7
0.263
-154.7
7
0.189
137.1
1.56
1.197
-5.4
-13.27
0.217
12.7
0.306
-171.3
7.5
0.193
117.3
1.03
1.126
-14.4
-12.88
0.227
9.5
0.31
179.8
8
0.206
90.6
0.87
1.105
-22.2
-12.40
0.24
4.7
0.314
170.8
ALM-1106 Typical Noise Parameters, VDD = 2.85V, IDS = 8mA
Freq (GHz)
Fmin (dB)
Γ opt Mag.
Γ opt Ang.
Rn/50
NF @ 50dB
0.5
0.53
0.64
13.8
0.41
1.46
0.9
0.65
0.69
32.2
0.28
1.07
1.5
0.8
0.71
47.4
0.24
1.22
1.7
0.82
0.69
58.1
0.22
1.14
2
0.91
0.68
59.5
0.23
1.1
2.4
0.93
0.64
71.3
0.27
1.72
3
1.21
0.52
99.2
0.16
1.45
3.5
1.33
0.44
135.8
0.12
1.6
4
1.69
0.35
161.3
0.08
1.27
4.5
1.73
0.31
171.3
0.06
1.47
5
1.82
0.32
-179.6
0.06
1.65
5.5
1.98
0.34
-171.2
0.08
2.16
5.8
2.37
0.43
-174.8
0.14
2.88
7
Package Dimensions
TOPVIEW
2.00 ± 0.10
BOTTOM VIEW
SIDEVIEW
(6X) 0.36
6
PIN 1
O
AY
WW
2.00 ± 0.10
PIN 1
(4X) 0.65
1.66
4
(3X) 0.94
3
(6X) 0.10
(6X) 0.43
Existing Thermal Ground to pad clearance = 0.16mm
Samsung Thermal Ground to pad min clearance = 0.25mm
Device Orientation
REEL
CARRIER
TAPE
USER
FEED
DIRECTION
COVER TAPE
Tape Dimensions
Notes:
1. Measured from centerline of sprocket hole to centerline of pocket
2. Cumulative tolerance of 10 sprocket holes is ± 0.20
All dimensions in millimeters unless otherwise stated.
8
R 0.15
0.40
1.10 ± 0.10
Reel Dimensions
∅178.0 ± 1.0
FRONT
BACK
SEE DETAIL "x"
FRONT VIEW
RECYCLE LOGO
65˚
7.9 - 10.9**
+1.5*
8.4
- 0.0
45˚
R10.65
R5.2
FRONT
BACK
60˚
∅178.0± 1.0
∅55.0 ± 0.5
Slot hole 'b'
Slot hole 'o'
EMBOSSED RIBS
RAISED: 0.25mm, WIDTH: 1.25mm
BACK VIEW
9
∅51.2 ± 0.3
14.4*
MAX
Part Number Ordering Information
Part Number
No. of Devices
Container
ALM-1106-TR1
3000
7" Reel
ALM-1106-TR2
10000
13" Reel
ALM-1106-BLK
100
antistatic bag
For product information and a complete list of distributors, please go to our web site: www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Pte. in the United States and other countries.
Data subject to change. Copyright © 2006 Avago Technologies Pte. All rights reserved. Obsoletes 5989-3889EN
AV01-0028EN - February 22, 2006
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