ASI ALR015 Npn silicon rf power transistor Datasheet

ALR015
NPN SILICON RF POWER TRANSISTOR
PACKAGE STYLE .310 2L FLG
DESCRIPTION:
A
4x .062 x 45°
.040 x 45°
C
2xB
The ASI ALR015 is Designed for
ØE
D
F
G
H
FEATURES:
I
• Input Matching Network
•
• Omnigold™ Metalization System
M
R
N
MAXIMUM RATINGS
1.8 A
IC
32 V
VCC
PDISS
O
37.5 W @ TC = 25 C
O
-65 C to +250 C
TJ
O
O
TSTG
-65 C to +200 C
θ JC
4.0 OC/W
CHARACTERISTICS
SYMBOL
inches / mm
inches / mm
A
.095 / 2.41
.105 / 2.67
B
.100 / 2.54
.120 / 3.05
C
.050 / 1.27
MAXIMUM
D
.286 / 7.26
.306 / 7.77
E
.110 / 2.79
.130 / 3.30
F
.306 / 7.77
.318 / 8.08
G
.148 / 3.76
H
.400 / 10.16
.119 / 3.02
J
.552 / 14.02
.572 / 14.53
K
.790 / 20.07
.810 / 20.57
L
.300 / 7.62
.320 / 8.13
M
.003 / 0.08
.006 / 0.15
N
.052 / 1.32
.072 / 1.83
P
.118 / 3.00
.131 / 3.33
.230 / 5.84
ORDER CODE: ASI10511
O
TC = 25 C
NONETEST CONDITIONS
IC = 15 mA
BVCER
IC = 15 mA
BVEBO
IE = 1.5 mA
ICES
VCE = 28 V
VBE = 28 V
hFE
VCE = 5.0 V
IC = 1.0 A
VCC = 28 V
POUT = 15 W
ηC
MINIMUM
R
BVCBO
PG
P
DIM
I
O
J
K
L
RBE = 10 Ω
MINIMUM TYPICAL MAXIMUM
48
V
48
V
3.5
V
30
f = 1.2 to 1.4 GHz
UNITS
1.5
mA
300
---
8.5
dB
48
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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