ALR325 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 2L FLG(A) DESCRIPTION: A 4x .062 x 45° The ASI ALR325 is Designed for 1200 – 1400 MHz, L-Band Applications. 2xB C F E D G FEATURES: L N 18.75 A PDISS 55 V TSTG -65 °C to +200 °C θJC 0.10 °C/W inches / m m inches / m m .135 / 3.43 .145 / 3.68 B .100 / 2.54 .120 / 3.05 C .050 / 1.27 D .376 / 9.55 E .110 / 2.79 .130 / 3.30 F .395 / 10.03 .407 / 10.34 M A XIM UM .396 / 10.06 .193 / 4.90 .490 / 12.45 .510 / 12.95 .100 / 2.54 I J .690 / 17.53 .710 / 18.03 K .890 / 22.61 .910 / 23.11 L .003 / 0.08 .006 / 0.18 M .052 / 1.32 .072 / 1.83 N .118 / 3.00 .131 / 3.33 .230 / 5.84 P ORDER CODE: ASI10516 TC = 25 °C NONETEST CONDITIONS SYMBOL M IN IM UM A G 730 W @ TC = 25 °C CHARACTERISTICS DIM H -65 °C to +250 °C TJ P M MAXIMUM RATINGS VCC 2xR H J K I • Internal Input/Output Matching Network • PG = 6.5 db at 325 W/1400 MHz • Omnigold™ Metalization System IC .040 x 45° MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 50 mA 65 V BVCES IC = 50 mA 65 V BVEBO IE = 15 mA 3.0 V ICES VCE = 50 V hFE VCE = 5.0 V IC = 5.0 A PG ηC VCC = 45 V POUT = 325 W 10 f = 1.2 to 1.4 GHz 6.5 38 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 30 mA --- --dB % REV. B 1/1