AMD AM29LV010BB-45RJIB 1 megabit (128 k x 8-bit) cmos 3.0 volt-only uniform sector flash memory Datasheet

ADVANCE INFORMATION
Am29LV010B
1 Megabit (128 K x 8-Bit)
CMOS 3.0 Volt-only Uniform Sector Flash Memory
DISTINCTIVE CHARACTERISTICS
■ Single power supply operation
— Full voltage range: 2.7 to 3.6 volt read and write
operations for battery-powered applications
— Regulated voltage range: 3.0 to 3.6 volt read and
write operations and for compatibility with high
performance 3.3 volt microprocessors
■ Manufactured on 0.35 µm process technology
■ High performance
— Full voltage range: access times as fast as 55 ns
— Regulated voltage range: access times as fast
as 45 ns
■ Ultra low power consumption (typical values at
5 MHz)
— 200 nA Automatic Sleep mode current
— 200 nA standby mode current
— 7 mA read current
— 15 mA program/erase current
■ Flexible sector architecture
— Eight 16 Kbyte
— Supports full chip erase
— Sector Protection features:
Hardware method of locking a sector to prevent
any program or erase operations within that
sector
■ Unlock Bypass Mode Program Command
— Reduces overall programming time when
issuing multiple program command sequences
■ Embedded Algorithms
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically
writes and verifies data at specified addresses
■ Minimum 1,000,000 write cycle guarantee per
sector
■ Package option
— 32-pin TSOP
— 32-pin PLCC
■ Compatibility with JEDEC standards
— Pinout and software compatible with singlepower supply Flash
— Superior inadvertent write protection
■ Data# Polling and toggle bits
— Provides a software method of detecting
program or erase operation completion
■ Erase Suspend/Erase Resume
— Supports reading data from or programming
data to a sector that is not being erased
Sectors can be locked in-system or via
programming equipment
Temporary Sector Unprotect feature allows code
changes in previously locked sectors
This document contains information on a product under development at Advanced Micro Devices. The information
is intended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed
product without notice.
Publication# 22140 Rev: A Amendment/0
Issue Date: April 1998
ADVANCE INFORMATION
GENERAL DESCRIPTION
The Am29LV010B is a 1 Mbit, 3.0 Volt-only Flash
memory device organized as 131,072 bytes. The
Am29LV010B has a uniform sector architecture.
The device is offered in 32-pin PLCC and 32-pin TSOP
packages. The byte-wide (x8) data appears on DQ7–
DQ0. All read, erase, and program operations are
accomplished using only a single power supply. The
device can also be programmed in standard EPROM
programmers.
The standard Am29LV010B offers access times of 45,
55, 70, and 120 ns (90 and 100 ns parts are also available), allowing high speed microprocessors to operate
without wait states. To eliminate bus contention, the
device has separate chip enable (CE#), write enable
(WE#) and output enable (OE#) controls.
The device requires only a single power supply (2.7
V–3.6V) for both read and write functions. Internally
generated and regulated voltages are provided for the
program and erase operations.
The device is entirely command set compatible with the
JEDEC single-power-supply Flash standard. Commands are written to the command register using
standard microprocessor write timings. Register contents serve as input to an internal state-machine that
controls the erase and programming circuitry. Write
cycles also internally latch addresses and data needed
for the programming and erase operations. Reading
data out of the device is similar to reading from other
Flash or EPROM devices.
Device programming occurs by executing the program
command sequence. This initiates the Embedded
Program algorithm—an internal algorithm that automatically times the program pulse widths and verifies
proper cell margin. The Unlock Bypass mode facilitates faster programming times by requiring only two
write cycles to program data instead of four.
Device erasure occurs by executing the erase command sequence. This initiates the Embedded Erase
algorithm—an internal algorithm that automatically
preprograms the array (if it is not already programmed)
before executing the erase operation. During erase, the
device automatically times the erase pulse widths and
verifies proper cell margin.
The host system can detect whether a program or
erase operation is complete by reading the DQ7 (Data#
Polling) and DQ6 (toggle) status bits. After a program
or erase cycle has been completed, the device is ready
to read array data or accept another command.
The sector erase architecture allows memory sectors
to be erased and reprogrammed without affecting the
data contents of other sectors. The device is fully
erased when shipped from the factory.
Hardware data protection measures include a low
VCC detector that automatically inhibits write operations during power transitions. The hardware sector
protection feature disables both program and erase
operations in any combination of the sectors of memory. This can be achieved in-system or via programming equipment.
The Erase Suspend feature enables the user to put
erase on hold for any period of time to read data from,
or program data to, any sector that is not selected for
erasure. True background erase can thus be achieved.
The device offers two power-saving features. When addresses have been stable for a specified amount of
time, the device enters the automatic sleep mode.
The system can also place the device into the standby
mode. Power consumption is greatly reduced in both
these modes.
AMD’s Flash technology combines years of Flash
memory manufacturing experience to produce the
highest levels of quality, reliability and cost effectiveness. The device electrically erases all bits within a
sector simultaneously via Fowler-Nordheim tunneling. The data is programmed using hot electron
injection.
Am29LV010B
2
ADVANCE INFORMATION
PRODUCT SELECTOR GUIDE
Family Part Number
Speed Options
Am29LV010B
Regulated Voltage Range: VCC =3.0–3.6 V
-45R
Full Voltage Range: VCC = 2.7–3.6 V
-55
-70
-120
Max access time, ns (tACC)
45
55
70
120
Max CE# access time, ns (tCE)
45
55
70
120
Max OE# access time, ns (tOE)
30
30
35
50
Note: See “AC Characteristics” for full specifications.
BLOCK DIAGRAM
DQ0–DQ7
VCC
Sector Switches
VSS
Erase Voltage
Generator
WE#
Input/Output
Buffers
State
Control
Command
Register
PGM Voltage
Generator
Chip Enable
Output Enable
Logic
CE#
OE#
VCC Detector
Timer
A0–A16
Address Latch
STB
STB
Data
Latch
Y-Decoder
Y-Gating
X-Decoder
Cell Matrix
22140A-1
3
Am29LV010B
ADVANCE INFORMATION
CONNECTION DIAGRAMS
32-Pin Standard TSOP
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
OE#
A10
CE#
DQ7
DQ6
DQ5
DQ4
DQ3
VSS
DQ2
DQ1
DQ0
A0
A1
A2
A3
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A11
A9
A8
A13
A14
NC
WE#
VCC
NC
A16
A15
A12
A7
A6
A5
A4
WE#
NC
NC
VCC
A16
32-Pin Reverse TSOP
A12
A15
4 3 2 1 32 31 30
A7
5
29
A14
A6
6
28
A13
A5
A4
7
8
27
26
A8
A9
A3
9
25
A11
A2
10
24
OE#
A1
11
23
A10
A0
12
22
DQ0
13
CE#
DQ7
PLCC
21
DQ5
DQ6
DQ4
14 15 16 17 18 19 20
VSS
DQ3
OE#
A10
CE#
DQ7
DQ6
DQ5
DQ4
DQ3
VSS
DQ2
DQ1
DQ0
A0
A1
A2
A3
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
DQ1
DQ2
A11
A9
A8
A13
A14
NC
WE#
VCC
NC
A16
A15
A12
A7
A6
A5
A4
22140A-2
Am29LV010B
4
ADVANCE INFORMATION
PIN CONFIGURATION
A0–A16
LOGIC SYMBOL
= 17 addresses
17
DQ0–DQ7 = 8 data inputs/outputs
A0–A16
CE#
= Chip enable
OE#
= Output enable
WE#
= Write enable
CE#
VCC
= 3.0 volt-only single power supply
(see Product Selector Guide for speed
options and voltage supply tolerances)
OE#
VSS
= Device ground
NC
= Pin not connected internally
8
DQ0–DQ7
WE#
22140A-3
5
Am29LV010B
ADVANCE INFORMATION
ORDERING INFORMATION
Standard Products
AMD standard products are available in several packages and operating ranges. The order number (Valid Combination) is formed by a combination of the elements below.
Am29LV010B
T
-45R
E
C
OPTIONAL PROCESSING
Blank = Standard Processing
B = Burn-in
(Contact an AMD representative for more information)
TEMPERATURE RANGE
C = Commercial (0°C to +70°C)
I = Industrial (–40°C to +85°C)
E = Extended (–55°C to +125°C)
PACKAGE TYPE
E = 32-Pin Thin Small Outline Package (TSOP)
Standard Pinout (TS 032)
F = 32-Pin Thin Small Outline Package (TSOP)
Reverse Pinout (TSR032)
J = 32-Pin Rectangular Plastic Leaded Chip
Carrier (PL 032)
SPEED OPTION
See Product Selector Guide and Valid Combinations
BOOT CODE SECTOR ARCHITECTURE
T = Top Sector
B = Bottom Sector
DEVICE NUMBER/DESCRIPTION
Am29LV010B
1 Megabit (128 K x 8-Bit) CMOS Flash Memory
3.0 Volt-only Read, Program, and Erase
Valid Combinations
Am29LV010B-45R
Am29LV010B-55
Am29LV010B-70
Am29LV010B-120
EC, FC, JC
EC, EI, EE,
FC, FI, FE,
JC, JI, JE
Valid Combinations
Valid Combinations list configurations planned to be supported in volume for this device. Consult the local AMD sales
office to confirm availability of specific valid combinations and
to check on newly released combinations.
Am29LV010B
6
ADVANCE INFORMATION
REVISION SUMMARY
Valid Combinations
Revision A
Changes since publication number 21557A was
released: deleted the “R” designation from the 55 ns
option. Corrected the part numbers.
Split the Am29LV001B/Am29LV010B data sheet into
separate documents. The Am29LV001B data sheet
retains publication number 21557B and later; the
Am29LV010B data sheet has been reassigned publication number 22140.
Trademarks
Copyright © 1998 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
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Am29LV010B
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