SPANSION AM29PDLI27H83PCIN 128 megabit (8 m x 16-bit) cmos 3.0 volt-only, page mode simultaneous read/write flash memory with enhanced versatileio control Datasheet

Am29PDL127H
Data Sheet
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Publication Number 26864 Revision A
Amendment +4 Issue Date June 30, 2003
THIS PAGE LEFT INTENTIONALLY BLANK.
ADVANCE INFORMATION
Am29PDL127H
128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Page Mode Simultaneous Read/Write
Flash Memory with Enhanced VersatileIOTM Control
DISTINCTIVE CHARACTERISTICS
ARCHITECTURAL ADVANTAGES
SOFTWARE FEATURES
■ 128 Mbit Page Mode device
■ Software command-set compatible with JEDEC 42.4
standard
— Page size of 8 words: Fast page read access from random
locations within the page
■ Single power supply operation
— Full Voltage range: 2.7 to 3.6 volt read, erase, and program
operations for battery-powered applications
■ Simultaneous Read/Write Operation
— Data can be continuously read from one bank while
executing erase/program functions in another bank
— Zero latency switching from write to read operations
■ FlexBank Architecture
— Backward compatible with Am29F and Am29LV families
■ CFI (Common Flash Interface) complaint
— Provides device-specific information to the system, allowing
host software to easily reconfigure for different Flash devices
■ Erase Suspend / Erase Resume
— Suspends an erase operation to allow read or program
operations in other sectors of same bank
■ Unlock Bypass Program command
— Reduces overall programming time when issuing multiple
program command sequences
— 4 separate banks, with up to two simultaneous operations
per device
— Bank A: 16 Mbit (4 Kw x 8 and 32 Kw x 31)
HARDWARE FEATURES
— Bank B: 48 Mbit (32 Kw x 96)
■ Ready/Busy# pin (RY/BY#)
— Bank C: 48 Mbit (32 Kw x 96)
— Bank D: 16 Mbit (4 Kw x 8 and 32 Kw x 31)
■ Enhanced VersatileI/OTM (VIO) Control
— Output voltage generated and input voltages tolerated on all
control inputs and I/Os is determined by the voltage on the
VIO pin
— VIO options at 1.8 V and 3 V I/O
■ SecSiTM (Secured Silicon) Sector region
— Up to 128 words accessible through a command sequence
— Up to 64 factory-locked words
— Up to 64 customer-lockable words
■ Both top and bottom boot blocks in one device
■ Manufactured on 0.13 µm process technology
■ 20-year data retention at 125°C
■ Minimum 1 million erase cycle guarantee per sector
PERFORMANCE CHARACTERISTICS
■ High Performance
— Page access times as fast as 20 ns
— Random access times as fast as 55 ns
■ Power consumption (typical values at 10 MHz)
— 55 mA active read current
— 25 mA program/erase current
— 1 µA typical standby mode current
— Provides a hardware method of detecting program or erase
cycle completion
■ Hardware reset pin (RESET#)
— Hardware method to reset the device to reading array data
■ WP#/ ACC (Write Protect/Acceleration) input
— At VIL, hardware level protection for the first and last two 4K
word sectors.
— At VIH, allows removal of sector protection
— At VHH, provides accelerated programming in a factory
setting
■ Persistent Sector Protection
— A command sector protection method to lock combinations
of individual sectors and sector groups to prevent program or
erase operations within that sector
— Sectors can be locked and unlocked in-system at VCC level
■ Password Sector Protection
— A sophisticated sector protection method to lock
combinations of individual sectors and sector groups to
prevent program or erase operations within that sector using
a user-defined 64-bit password
■ Package options
— 64-ball Fortified BGA
— 80-ball Fine-pitch BGA
— Multi Chip Packages (MCP)
This document contains information on a product under development at Advanced Micro Devices. The information
is intended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed
product without notice.
Publication# 26864 Rev: A Amendment/+4
Issue Date: June 30, 2003
A D V A N C E
I N F O R M A T I O N
GENERAL DESCRIPTION
The Am29PDL127H is a 128 Mbit, 3.0 volt-only Page Mode
and Simultaneous Read/Write Flash memory device organized as 8 Mwords. The device is offered in a 64-ball Fortified BGA package, an 80-ball Fine-pitch BGA package, and
various multi-chip packages. The word-wide data (x16) appears on DQ15-DQ0. This device can be programmed
in-system or in standard EPROM programmers. A 12.0 V
VPP is not required for write or erase operations.
The device offers fast page access times of 20 to 30 ns, with
corresponding random access times of 55 to 85 ns, respectively, allowing high speed microprocessors to operate without wait states. To eliminate bus contention the device has
separate chip enable (CE#), write enable (WE#) and output
enable (OE#) controls. Simultaneous Read/Write Operation
with Zero Latency
The Simultaneous Read/Write architecture provides simultaneous operation by dividing the memory space into 4
banks, which can be considered to be four separate memory
arrays as far as certain operations are concerned. The device can improve overall system performance by allowing a
host system to program or erase in one bank, then immediately and simultaneously read from another bank with zero
latency (with two simultaneous operations operating at any
one time). This releases the system from waiting for the
completion of a program or erase operation, greatly improving system performance.
The device can be organized in both top and bottom sector
configurations. The banks are organized as follows:
Bank
Sectors
A
16 Mbit (4 Kw x 8 and 32 Kw x 31)
B
48 Mbit (32 Kw x 96)
C
48 Mbit (32 Kw x 96)
D
16 Mbit (4 Kw x 8 and 32 Kw x 31)
Page Mode Features
The page size is 8 words. After initial page access is accomplished, the page mode operation provides fast read access
speed of random locations within that page.
Standard Flash Memory Features
The device requires a single 3.0 volt power supply (2.7 V
to 3.6 V or 2.7 V to 3.3 V) for both read and write functions.
Internally generated and regulated voltages are provided for
the program and erase operations.
The device is entirely command set compatible with the
JEDEC 42.4 single-power-supply Flash standard. Com-
2
mands are written to the command register using standard
microprocessor write timing. Register contents serve as inputs to an internal state-machine that controls the erase and
programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase
operations. Reading data out of the device is similar to reading from other Flash or EPROM devices.
Device programming occurs by executing the program command sequence. The Unlock Bypass mode facilitates faster
programming times by requiring only two write cycles to program data instead of four. Device erasure occurs by executing the erase command sequence.
The host system can detect whether a program or erase operation is complete by reading the DQ7 (Data# Polling) and
DQ6 (toggle) status bits. After a program or erase cycle has
been completed, the device is ready to read array data or
accept another command.
The sector erase architecture allows memory sectors to be
erased and reprogrammed without affecting the data contents of other sectors. The device is fully erased when
shipped from the factory.
Hardware data protection measures include a low VCC detector that automatically inhibits write operations during
power transitions. The hardware sector protection feature
disables both program and erase operations in any combination of sectors of memory. This can be achieved in-system
or via programming equipment.
The Erase Suspend/Erase Resume feature enables the
user to put erase on hold for any period of time to read data
from, or program data to, any sector that is not selected for
erasure. True background erase can thus be achieved. If a
read is needed from the SecSi Sector area (One Time Program area) after an erase suspend, then the user must use
the proper command sequence to enter and exit this region.
The device offers two power-saving features. When addresses have been stable for a specified amount of time, the
device enters the automatic sleep mode. The system can
also place the device into the standby mode. Power consumption is greatly reduced in both these modes.
AMD’s Flash technology combined years of Flash memory
manufacturing experience to produce the highest levels of
quality, reliability and cost effectiveness. The device electrically erases all bits within a sector simultaneously via
Fowler-Nordheim tunneling. The data is programmed using
hot electron injection.
Am29PDL127H
June 30, 2003
A D V A N C E
I N F O R M A T I O N
TABLE OF CONTENTS
Product Selector Guide . . . . . . . . . . . . . . . . . . . . . 5
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Simultaneous Operation Block Diagram . . . . . . . 6
Connection Diagrams . . . . . . . . . . . . . . . . . . . . . . 7
Pin Description. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Ordering Information . . . . . . . . . . . . . . . . . . . . . . 10
Device Bus Operations . . . . . . . . . . . . . . . . . . . . 11
Table 1. Am29PDL127H Device Bus Operations ...........................11
Requirements for Reading Array Data ................................... 11
Random Read (Non-Page Read) ........................................... 11
Page Mode Read .................................................................... 11
Table 2. Page Select .......................................................................12
Simultaneous Operation ......................................................... 12
Table 3. Bank Select .......................................................................12
Writing Commands/Command Sequences ............................ 12
Accelerated Program Operation ............................................. 12
Autoselect Functions .............................................................. 12
Automatic Sleep Mode ........................................................... 13
RESET#: Hardware Reset Pin ............................................... 13
Output Disable Mode .............................................................. 13
Table 4. Am29PDL127H Sector Architecture ..................................14
Table 5. SecSiTM Sector Addresses ...............................................21
Table 6. Autoselect Codes (High Voltage Method) ........................22
Table 7. Am29PDL127H Boot Sector/Sector Block Addresses for
Protection/Unprotection ...................................................................23
Sector Protection . . . . . . . . . . . . . . . . . . . . . . . . . 24
Persistent Sector Protection ................................................... 24
Persistent Protection Bit (PPB) ............................................... 24
Persistent Protection Bit Lock (PPB Lock) ............................. 24
Dynamic Protection Bit (DYB) ................................................ 24
Table 8. Sector Protection Schemes ...............................................25
Autoselect Command Sequence ............................................ 34
Enter SecSi™ Sector/Exit SecSi Sector
Command Sequence .............................................................. 34
Word Program Command Sequence ...................................... 35
Unlock Bypass Command Sequence ..................................... 35
Figure 4. Program Operation ......................................................... 36
Chip Erase Command Sequence ........................................... 36
Sector Erase Command Sequence ........................................ 36
Figure 5. Erase Operation.............................................................. 37
Erase Suspend/Erase Resume Commands ........................... 37
Password Program Command ................................................ 37
Password Verify Command .................................................... 38
Password Protection Mode Locking Bit Program Command .. 38
Persistent Sector Protection Mode Locking Bit Program
Command ............................................................................... 38
SecSi Sector Protection Bit Program Command .................... 38
PPB Lock Bit Set Command ................................................... 38
DYB Write Command ............................................................. 38
Password Unlock Command .................................................. 39
PPB Program Command ........................................................ 39
All PPB Erase Command ........................................................ 39
DYB Write Command ............................................................. 39
PPB Lock Bit Set Command ................................................... 39
PPB Status Command ............................................................ 39
PPB Lock Bit Status Command .............................................. 39
Sector Protection Status Command ....................................... 39
Table 13. Memory Array Command Definitions ............................. 40
Table 14. Sector Protection Command Definitions ........................ 41
Write Operation Status . . . . . . . . . . . . . . . . . . . . . 42
DQ7: Data# Polling ................................................................. 42
Figure 6. Data# Polling Algorithm .................................................. 42
Persistent Sector Protection Mode Locking Bit ...................... 25
Password Protection Mode ..................................................... 25
Password and Password Mode Locking Bit ........................... 26
64-bit Password ...................................................................... 26
Write Protect (WP#) ................................................................ 26
Persistent Protection Bit Lock ................................................. 26
High Voltage Sector Protection .............................................. 27
DQ6: Toggle Bit I .................................................................... 43
Figure 1. In-System Sector Protection/
Sector Unprotection Algorithms ...................................................... 28
Absolute Maximum Ratings. . . . . . . . . . . . . . . . . 46
Temporary Sector Unprotect .................................................. 29
Figure 2. Temporary Sector Unprotect Operation........................... 29
SecSi™ (Secured Silicon) Sector
Flash Memory Region ............................................................ 29
Factory-Locked Area (64 words) ............................................ 29
Customer-Lockable Area (64 words) ...................................... 29
SecSi Sector Protection Bits ................................................... 30
Figure 3. SecSi Sector Protect Verify.............................................. 30
Hardware Data Protection ...................................................... 30
Low VCC Write Inhibit ............................................................ 30
Write Pulse “Glitch” Protection ............................................... 30
Logical Inhibit .......................................................................... 30
Power-Up Write Inhibit ............................................................ 30
Common Flash Memory Interface (CFI) . . . . . . . 30
Command Definitions . . . . . . . . . . . . . . . . . . . . . 34
Reading Array Data ................................................................ 34
Reset Command ..................................................................... 34
June 30, 2003
Figure 7. Toggle Bit Algorithm........................................................ 43
DQ2: Toggle Bit II ................................................................... 44
Reading Toggle Bits DQ6/DQ2 ............................................... 44
DQ5: Exceeded Timing Limits ................................................ 44
DQ3: Sector Erase Timer ....................................................... 44
Table 15. Write Operation Status ................................................... 45
Figure 8. Maximum Negative Overshoot Waveform ...................... 46
Figure 9. Maximum Positive Overshoot Waveform........................ 46
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 47
Test Conditions. . . . . . . . . . . . . . . . . . . . . . . . . . . 48
Figure 10. Test Setup.................................................................... 48
Figure 11. Input Waveforms and Measurement Levels ................. 48
AC Characteristic . . . . . . . . . . . . . . . . . . . . . . . . . 49
Read-Only Operations ........................................................... 49
Figure 12. Read Operation Timings ............................................... 50
Figure 13. Page Read Operation Timings...................................... 50
Hardware Reset (RESET#) .................................................... 51
Figure 14. Reset Timings ............................................................... 51
Erase and Program Operations .............................................. 52
Figure 15. Program Operation Timings..........................................
Figure 16. Accelerated Program Timing Diagram..........................
Figure 17. Chip/Sector Erase Operation Timings ..........................
Figure 18. Back-to-back Read/Write Cycle Timings ......................
Figure 19. Data# Polling Timings (During Embedded Algorithms).
Figure 20. Toggle Bit Timings (During Embedded Algorithms)......
Am29PDL127H
53
53
54
55
55
56
3
A D V A N C E
I N F O R M A T I O N
Figure 21. DQ2 vs. DQ6.................................................................. 56
Temporary Sector Unprotect .................................................. 57
Figure 22. Temporary Sector Unprotect Timing Diagram ............... 57
Figure 23. Sector/Sector Block Protect and
Unprotect Timing Diagram .............................................................. 58
Alternate CE# Controlled Erase and Program Operations ..... 59
Figure 24. Alternate CE# Controlled Write (Erase/Program)
Operation Timings........................................................................... 60
Erase And Programming Performance . . . . . . . 61
Latchup Characteristics . . . . . . . . . . . . . . . . . . . 61
4
BGA Pin Capacitance . . . . . . . . . . . . . . . . . . . . . . 61
Data Retention. . . . . . . . . . . . . . . . . . . . . . . . . . . . 61
Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . 62
LAA064—64-Ball Fortified Ball Grid Array 13 x 11 mm package
62
VBB080—80-Ball Fine-pitch Ball Grid Array 11.5 x 9
mm package ........................................................................... 63
Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . 64
Am29PDL127H
June 30, 2003
A D V A N C E
I N F O R M A T I O N
PRODUCT SELECTOR GUIDE
Part Number
Am29PDL127H
VCC,VIO = 2.7–3.3 V
Speed Option
53
VCC,VIO = 2.7–3.6 V
63
83
VCC = 2.7–3.6 V,
VIO = 1.65–1.95 V
Max Access Time, ns (tACC)
68
88
55
65
65
85
20
25
30
30
Max CE# Access, ns (tCE)
Max Page Access, ns (tPACC)
Max OE# Access, ns (tOE)
* Contact factory for availability
BLOCK DIAGRAM
DQ15–DQ0
RY/BY# (See Note)
VCC
VSS
Sector
Switches
VIO
RESET#
Input/Output
Buffers
Erase Voltage
Generator
WE#
State
Control
Command
Register
PGM Voltage
Generator
Chip Enable
Output Enable
Logic
CE#
OE#
Y-Decoder
A22–A3
Y-Gating
Timer
Address Latch
VCC Detector
Data Latch
X-Decoder
Cell Matrix
A2–A0
Note:RY/BY# is an open drain output.
June 30, 2003
Am29PDL127H
5
A D V A N C E
I N F O R M A T I O N
SIMULTANEOUS OPERATION BLOCK DIAGRAM
VCC
VSS
OE#
Mux
Bank A
Bank B Address
Bank B
X-Decoder
A22–A0
Status
DQ15–DQ0
Control
Mux
DQ15–DQ0
CE#
WP#/ACC
STATE
CONTROL
&
COMMAND
REGISTER
X-Decoder
A22–A0
DQ0–DQ15
Bank C Address
Bank C
X-Decoder
A22–A0
Bank D Address
Y-gate
RESET#
WE#
DQ15–DQ0
RY/BY#
DQ15–DQ0
A22–A0
X-Decoder
DQ15–DQ0
A22–A0
Y-gate
Bank A Address
Bank D
Mux
6
Am29PDL127H
June 30, 2003
A D V A N C E
I N F O R M A T I O N
CONNECTION DIAGRAMS
80-Ball Fine-pitch BGA
Top View, Balls Facing Down
A8
B8
C8
D8
E8
F8
G8
H8
J8
K8
L8
M8
NC
NC
NC
A22
NC
VIO
VSS
NC
NC
NC
NC
NC
A7
B7
C7
D7
E7
F7
G7
H7
J7
K7
L7
M7
NC
NC
A13
A12
A14
A15
A16
NC
DQ15
VSS
NC
NC
C6
D6
E6
F6
G6
H6
J6
K6
A9
A8
A10
A11
DQ7
DQ14
DQ13
DQ6
C5
D5
E5
F5
G5
H5
J5
K5
WE#
RESET#
A21
A19
DQ5
DQ12
VCC
DQ4
C4
D4
E4
F4
G4
H4
J4
K4
A18
A20
DQ2
DQ10
DQ11
DQ3
RY/BY# WP#/ACC
C3
D3
E3
F3
G3
H3
J3
K3
A7
A17
A6
A5
DQ0
DQ8
DQ9
DQ1
A2
B2
C2
D2
E2
F2
G2
H2
J2
K2
L2
M2
NC
NC
A3
A4
A2
A1
A0
CE#
OE#
VSS
NC
NC
A1
B1
C1
D1
E1
F1
G1
H1
J1
K1
L1
M1
NC
NC
NC
NC
NC
NC
NC
VIO
NC
NC
NC
NC
June 30, 2003
Am29PDL127H
7
A D V A N C E
I N F O R M A T I O N
CONNECTION DIAGRAMS
64-Ball Fortified BGA
Top View, Balls Facing Down
A8
B8
C8
D8
E8
F8
G8
H8
NC
A22
NC
VIO
VSS
NC
NC
NC
A7
B7
C7
D7
E7
F7
G7
H7
A13
A12
A14
A15
A16
NC
DQ15
VSS
A6
B6
C6
D6
E6
F6
G6
H6
A9
A8
A10
A11
DQ7
DQ14
DQ13
DQ6
A5
B5
C5
D5
E5
F5
G5
H5
WE#
RESET#
A21
A19
DQ5
DQ12
VCC
DQ4
A4
B4
C4
D4
E4
F4
G4
H4
A18
A20
DQ2
DQ10
DQ11
DQ3
RY/BY# WP#/ACC
A3
B3
C3
D3
E3
F3
G3
H3
A7
A17
A6
A5
DQ0
DQ8
DQ9
DQ1
A2
B2
C2
D2
E2
F2
G2
H2
A3
A4
A2
A1
A0
CE#
OE#
VSS
A1
B1
C1
D1
E1
F1
G1
H1
NC
NC
NC
NC
NC
VIO
NC
NC
Special Package Handling Instructions
Special handling is required for Flash Memory products
in molded packages (TSOP, BGA, PDIP, SSOP,
PLCC).
8
The package and/or data integrity may be compromised
if the package body is exposed to temperatures above
150°C for prolonged periods of time.
Am29PDL127H
June 30, 2003
A D V A N C E
I N F O R M A T I O N
PIN DESCRIPTION
A22–A0
=
LOGIC SYMBOL
23-bit address bus for 128 Mb device. A9 supports 12 V autoselect inputs.
23
A22–A0
DQ15–DQ0
DQ15–DQ0 =
16-bit data inputs/outputs/float
CE#
=
Chip Enable Inputs
OE#
=
Output Enable Input
WE#
=
Write Enable
VSS
=
Device Ground
NC
=
Pin Not Connected Internally
RY/BY#
=
Ready/Busy output and open drain.
When RY/BY#= VIH, the device is
ready to accept read operations and
commands. When RY/BY#= VOL,
the device is either executing an embedded algorithm or the device is
executing a hardware reset operation.
CE#
OE#
WE#
WP#/ACC
RESET#
WP#/ACC
=
Write Protect/Acceleration Input.
When WP/ACC#= VIL, the highest
and lowest two 4K-word sectors are
write protected regardless of other
sector protection configurations.
When WP/ACC#= VIH, these sector
are unprotected unless the DYB or
PPB is programmed. When
WP/ACC#= 12V, program and erase
operations are accelerated.
VIO
=
Input/Output Buffer Power Supply
(1.65 V to 1.95 V or 2.7 V to 3.6 V)
VCC
=
Chip Power Supply
(2.7 V to 3.6 V or 2.7 to 3.3 V)
RESET#
=
Hardware Reset Pin
June 30, 2003
16
Am29PDL127H
RY/BY#
VIO (VCCQ)
9
A D V A N C E
I N F O R M A T I O N
ORDERING INFORMATION
Standard Products
AMD standard products are available in several packages and operating ranges. The order number (Valid Combination) is
formed by a combination of the following:
Am29PDL127
H
53
VK
I
OPTIONAL PROCESSING
Blank = Standard Processing
N
= 16-byte ESN devices
(Contact an AMD representative for more information)
TEMPERATURE RANGE
I
= Industrial (–40°C to +85°C)
PACKAGE TYPE
VK
= 80-Ball Fine-pitch Ball Grid Array
0.8 mm pitch, 11.5 x 9 mm package (VBB080)
PC
= 64-ball Fortified Ball Grid Array
1.0 mm pitch, 13 x 11 mm package (LAA064)
SPEED OPTION
See Product Selector Guide and Valid Combinations
Process Technology
H = 0.13 µm
DEVICE NUMBER/DESCRIPTION
Am29PDL127H
128 Megabit (8 M x 16-Bit) CMOS Flash Memory
3.0 Volt-only Read, Program, and Erase
Valid Combinations
Valid Combinations for BGA Packages
Valid Combinations list configurations planned to be supported in
volume for this device. Consult the local AMD sales office to confirm availability of specific valid combinations and to check on
newly released combinations.
Order Number
Package Marking
Am29PDL127H53
PCI
PD127H53P
Am29PDL127H53
VKI
PD127H53V
Am29PDL127H63
PCI
PD127H63P
Am29PDL127H63
VKI
PD127H63V
Am29PDL127H68
PCI
PD127H68P
Am29PDL127H68
VKI
PD127H68V
Am29PDL127H83
PCI
PD127H83P
Am29PDL127H83
VKI
PD127H83V
Am29PDL127H88
PCI
PD127H88P
Am29PDL127H88
VKI
PD127H88V
Speed
(ns)
VIO
Range
55
2.7–
3.3 V
2.7–
3.6 V
65
1.65–
1.95 V
I
2.7–
3.6 V
85
1.65–
1.95 V
Note:
1.
10
For the Am29PDL127H, the last digit of the speed grade specifies
the VIO range of the device. Speed grades ending in 3 (e.g., 53,
63) indicate a 3 Volt VIO range. Speed ending in 8 (e.g., 68, 68)
indicate a 1.8 Volt VIO range.
Am29PDL127H
June 30, 2003
A D V A N C E
I N F O R M A T I O N
DEVICE BUS OPERATIONS
This section describes the requirements and use of
the device bus operations, which are initiated through
the internal command register. The command register
itself does not occupy any addressable memory location. The register is a latch used to store the commands, along with the address and data information
needed to execute the command. The contents of the
Table 1.
register serve as inputs to the internal state machine.
The state machine outputs dictate the function of the
device. Table 1 lists the device bus operations, the inputs and control levels they require, and the resulting
output. The following subsections describe each of
these operations in further detail.
Am29PDL127H Device Bus Operations
CE#
OE#
WE#
RESET#
WP#/ACC
Addresses
(A22–A0)
DQ15–
DQ0
Read
L
L
H
H
X
AIN
DOUT
Write
L
H
L
H
X
AIN
DIN
VIO±
0.3 V
X
X
VIO ±
0.3 V
X (Note 2)
X
High-Z
Output Disable
L
H
H
H
X
X
High-Z
Reset
X
X
X
L
X
X
High-Z
Temporary Sector Unprotect (High
Voltage)
X
X
X
VID
X
AIN
DIN
Operation
Standby
Legend: L = Logic Low = VIL, H = Logic High = VIH, VID = 11.5–12.5 V, VHH = 8.5–9.5 V, X = Don’t Care, SA = Sector Address,
AIN = Address In, DIN = Data In, DOUT = Data Out
Notes:
1. The sector protect and sector unprotect functions may also be implemented via programming equipment. See the High
Voltage Sector Protection section.
2. WP#/ACC must be high when writing to sectors 0, 1, 268, or 269.
Requirements for Reading Array Data
Random Read (Non-Page Read)
To read array data from the outputs, the system must
drive the OE# and appropriate CE# pins to VIL. CE# is
the power control. OE# is the output control and gates
array data to the output pins. WE# should remain at
VIH.
Address access time (tACC) is equal to the delay from
stable addresses to valid output data. The chip enable
access time (t CE ) is the delay from the stable addresses and stable CE# to valid data at the output inputs. The output enable access time is the delay from
the falling edge of the OE# to valid data at the output
inputs (assuming the addresses have been stable for
at least tACC–tOE time).
The internal state machine is set for reading array data
upon device power-up, or after a hardware reset. This
ensures that no spurious alteration of the memory
content occurs during the power transition. No command is necessary in this mode to obtain array data.
Standard microprocessor read cycles that assert valid
addresses on the device address inputs produce valid
data on the device data outputs. Each bank remains
enabled for read access until the command register
contents are altered.
Refer to the AC Characteristics table for timing specifications and to Figure 11 for the timing diagram. ICC1 in
the DC Characteristics table represents the active current specification for reading array data.
June 30, 2003
Page Mode Read
The device is capable of fast page mode read and is
compatible with the page mode Mask ROM read operation. This mode provides faster read access speed
for random locations within a page. Address bits
A22–A3 select an 8 word page, and address bits
A2–A0 select a specific word within that page. This is
an asynchronous operation with the microprocessor
supplying the specific word location.
The random or initial page access is tACC or t CE and
subsequent page read accesses (as long as the locations specified by the microprocessor falls within that
page) is equivalent to tPACC. When CE# is deasserted
(CE#=VIH), the reassertion of CE# for subsequent ac-
Am29PDL127H
11
A D V A N C E
I N F O R M A T I O N
cess has access time of tACC or tCE. Here again, CE#
selects the device and OE# is the output control and
should be used to gate data to the output inputs if the
device is selected. Fast page mode accesses are obtained by keeping A22–A3 constant and changing
A2–A0 to select the specific word within that page.
Table 2.
Page Select
Word
A2
A1
A0
Word 0
0
0
0
Word 1
0
0
1
Word 2
0
1
0
Word 3
0
1
1
Word 4
1
0
0
Word 5
1
0
1
Word 6
1
1
0
Word 7
1
1
1
Simultaneous Operation
In addition to the conventional features (read, program, erase-suspend read, and erase-suspend program), the device is capable of reading data from one
bank of memory while a program or erase operation is
in progress in another bank of memory (simultaneous
operation). The bank can be selected by bank addresses (A22–A20) with zero latency.
The simultaneous operation can execute multi-function mode in the same bank.
Table 3.
Bank Select
Bank
A22–A20
Bank A
000
Bank B
001, 010, 011
Bank C
100, 101, 110
Bank D
111
An erase operation can erase one sector, multiple sectors, or the entire device. Table 4 indicates the address
space that each sector occupies. A “bank address” is
the address bits required to uniquely select a bank.
Similarly, a “sector address” refers to the address bits
required to uniquely select a sector. The “Command
Definitions” section has details on erasing a sector or
the entire chip, or suspending/resuming the erase operation.
ICC2 in the DC Characteristics table represents the active current specification for the write mode. The AC
Characteristics section contains timing specification
tables and timing diagrams for write operations.
Accelerated Program Operation
The device offers accelerated program operations
through the ACC function. This function is primarily intended to allow faster manufacturing throughput at the
factory.
If the system asserts VHH on this pin, the device automatically enters the aforementioned Unlock Bypass
mode, temporarily unprotects any protected sectors,
and uses the higher voltage on the pin to reduce the
time required for program operations. The system
would use a two-cycle program command sequence
as required by the Unlock Bypass mode. Removing
VHH from the WP#/ACC pin returns the device to normal operation. Note that VHH must not be asserted on
WP#/ACC for operations other than accelerated programming, or device damage may result. In addition,
the WP#/ACC pin should be raised to VCC when not in
use. That is, the WP#/ACC pin should not be left floating or unconnected; inconsistent behavior of the device may result.
Autoselect Functions
Writing Commands/Command Sequences
To write a command or command sequence (which includes programming data to the device and erasing
sectors of memory), the system must drive WE# and
CE# to VIL, and OE# to VIH.
The device features an Unlock Bypass mode to facilitate faster programming. Once a bank enters the Unlock Bypass mode, only two write cycles are required
to program a word, instead of four. The “Word Program Command Sequence” section has details on
12
programming data to the device using both standard
and Unlock Bypass command sequences.
If the system writes the autoselect command sequence, the device enters the autoselect mode. The
system can then read autoselect codes from the internal register (which is separate from the memory array)
on DQ15–DQ0. Standard read cycle timings apply in
this mode. Refer to the Autoselect Mode and Autoselect Command Sequence sections for more information.
Standby Mode
When the system is not reading or writing to the device, it can place the device in the standby mode. In
this mode, current consumption is greatly reduced,
and the outputs are placed in the high impedance
state, independent of the OE# input.
The device enters the CMOS standby mode when the
CE# and RESET# pins are both held at VIO ± 0.3 V.
Am29PDL127H
June 30, 2003
A D V A N C E
I N F O R M A T I O N
(Note that this is a more restricted voltage range than
VIH.) If CE# and RESET# are held at VIH, but not within
VIO ± 0.3 V, the device will be in the standby mode, but
the standby current will be greater. The device requires standard access time (t CE ) for read access
when the device is in either of these standby modes,
before it is ready to read data.
If the device is deselected during erasure or programming, the device draws active current until the
operation is completed.
I CC3 in the DC Characteristics table represents the
CMOS standby current specification.
Automatic Sleep Mode
The automatic sleep mode minimizes Flash device energy consumption. The device automatically enables
this mode when addresses remain stable for tACC +
150 ns. The automatic sleep mode is independent of
the CE#, WE#, and OE# control signals. Standard address access timings provide new data when addresses are changed. While in sleep mode, output
data is latched and always available to the system.
Note that during automatic sleep mode, OE# must be
at VIH before the device reduces current to the stated
sleep mode specification. ICC5 in the DC Characteristics table represents the automatic sleep mode current
specification.
RESET#: Hardware Reset Pin
The RESET# pin provides a hardware method of resetting the device to reading array data. When the RESET# pin is driven low for at least a period of tRP, the
device immediately terminates any operation in
progress, tristates all output pins, and ignores all
June 30, 2003
read/write commands for the duration of the RESET#
pulse. The device also resets the internal state machine to reading array data. The operation that was interrupted should be reinitiated once the device is
ready to accept another command sequence, to ensure data integrity.
Current is reduced for the duration of the RESET#
pulse. When RESET# is held at VSS±0.3 V, the device
draws CMOS standby current (ICC4). If RESET# is held
at VIL but not within VSS±0.3 V, the standby current will
be greater.
The RESET# pin may be tied to the system reset circuitry. A system reset would thus also reset the Flash
memory, enabling the system to read the boot-up firmware from the Flash memory.
If RESET# is asserted during a program or erase operation, the RY/BY# pin remains a “0” (busy) until the
internal reset operation is complete, which requires a
time of t READY (during Embedded Algorithms). The
system can thus monitor RY/BY# to determine
whether the reset operation is complete. If RESET# is
asserted when a program or erase operation is not executing (RY/BY# pin is “1”), the reset operation is completed within a time of tREADY (not during Embedded
Algorithms). The system can read data tRH after the
RESET# pin returns to VIH.
Refer to the AC Characteristic tables for RESET# parameters and to Figure 14 for the timing diagram.
Output Disable Mode
When the OE# input is at VIH, output from the device is
disabled. The output pins (except for RY/BY#) are
placed in the highest Impedance state
Am29PDL127H
13
A D V A N C E
Table 4.
Bank A
Bank
14
I N F O R M A T I O N
Am29PDL127H Sector Architecture
Sector
Sector Address (A22-A12)
Sector Size (Kwords)
Address Range (x16)
SA0
00000000000
4
000000h–000FFFh
SA1
00000000001
4
001000h–001FFFh
SA2
00000000010
4
002000h–002FFFh
SA3
00000000011
4
003000h–003FFFh
SA4
00000000100
4
004000h–004FFFh
SA5
00000000101
4
005000h–005FFFh
SA6
00000000110
4
006000h–006FFFh
SA7
00000000111
4
007000h–007FFFh
SA8
00000001XXX
32
008000h–00FFFFh
SA9
00000010XXX
32
010000h–017FFFh
SA10
00000011XXX
32
018000h–01FFFFh
SA11
00000100XXX
32
020000h–027FFFh
SA12
00000101XXX
32
028000h–02FFFFh
SA13
00000110XXX
32
030000h–037FFFh
SA14
00000111XXX
32
038000h–03FFFFh
SA15
00001000XXX
32
040000h–047FFFh
SA16
00001001XXX
32
048000h–04FFFFh
SA17
00001010XXX
32
050000h–057FFFh
SA18
00001011XXX
32
058000h–05FFFFh
SA19
00001100XXX
32
060000h–067FFFh
SA20
00001101XXX
32
068000h–06FFFFh
SA21
00001110XXX
32
070000h–077FFFh
SA22
00001111XXX
32
078000h–07FFFFh
SA23
00010000XXX
32
080000h–087FFFh
SA24
00010001XXX
32
088000h–08FFFFh
SA25
00010010XXX
32
090000h–097FFFh
SA26
00010011XXX
32
098000h–09FFFFh
SA27
00010100XXX
32
0A0000h–0A7FFFh
SA28
00010101XXX
32
0A8000h–0AFFFFh
SA29
00010110XXX
32
0B0000h–0B7FFFh
SA30
00010111XXX
32
0B8000h–0BFFFFh
SA31
00011000XXX
32
0C0000h–0C7FFFh
SA32
00011001XXX
32
0C8000h–0CFFFFh
SA33
00011010XXX
32
0D0000h–0D7FFFh
SA34
00011011XXX
32
0D8000h–0DFFFFh
SA35
00011100XXX
32
0E0000h–0E7FFFh
SA36
00011101XXX
32
0E8000h–0EFFFFh
SA37
00011110XXX
32
0F0000h–0F7FFFh
SA38
00011111XXX
32
0F8000h–0FFFFFh
Am29PDL127H
June 30, 2003
A D V A N C E
Table 4.
Bank B
Bank
June 30, 2003
I N F O R M A T I O N
Am29PDL127H Sector Architecture
Sector
Sector Address (A22-A12)
Sector Size (Kwords)
Address Range (x16)
SA39
00100000XXX
32
100000h–107FFFh
SA40
00100001XXX
32
108000h–10FFFFh
SA41
00100010XXX
32
110000h–117FFFh
SA42
00100011XXX
32
118000h–11FFFFh
SA43
00100100XXX
32
120000h–127FFFh
SA44
00100101XXX
32
128000h–12FFFFh
SA45
00100110XXX
32
130000h–137FFFh
SA46
00100111XXX
32
138000h–13FFFFh
SA47
00101000XXX
32
140000h–147FFFh
SA48
00101001XXX
32
148000h–14FFFFh
SA49
00101010XXX
32
150000h–157FFFh
SA50
00101011XXX
32
158000h–15FFFFh
SA51
00101100XXX
32
160000h–167FFFh
SA52
00101101XXX
32
168000h–16FFFFh
SA53
00101110XXX
32
170000h–177FFFh
SA54
00101111XXX
32
178000h–17FFFFh
SA55
00110000XXX
32
180000h–187FFFh
SA56
00110001XXX
32
188000h–18FFFFh
SA57
00110010XXX
32
190000h–197FFFh
SA58
00110011XXX
32
198000h–19FFFFh
SA59
00110100XXX
32
1A0000h–1A7FFFh
SA60
00110101XXX
32
1A8000h–1AFFFFh
SA61
00110110XXX
32
1B0000h–1B7FFFh
SA62
00110111XXX
32
1B8000h–1BFFFFh
SA63
00111000XXX
32
1C0000h–1C7FFFh
SA64
00111001XXX
32
1C8000h–1CFFFFh
SA65
00111010XXX
32
1D0000h–1D7FFFh
SA66
00111011XXX
32
1D8000h–1DFFFFh
SA67
00111100XXX
32
1E0000h–1E7FFFh
SA68
00111101XXX
32
1E8000h–1EFFFFh
SA69
00111110XXX
32
1F0000h–1F7FFFh
SA70
00111111XXX
32
1F8000h–1FFFFFh
SA71
01000000XXX
32
200000h–207FFFh
SA72
01000001XXX
32
208000h–20FFFFh
SA73
01000010XXX
32
210000h–217FFFh
SA74
01000011XXX
32
218000h–21FFFFh
SA75
01000100XXX
32
220000h–227FFFh
SA76
01000101XXX
32
228000h–22FFFFh
SA77
01000110XXX
32
230000h–237FFFh
SA78
01000111XXX
32
238000h–23FFFFh
Am29PDL127H
15
A D V A N C E
Table 4.
Bank B
Bank
16
I N F O R M A T I O N
Am29PDL127H Sector Architecture
Sector
Sector Address (A22-A12)
Sector Size (Kwords)
Address Range (x16)
SA79
01001000XXX
32
240000h–247FFFh
SA80
01001001XXX
32
248000h–24FFFFh
SA81
01001010XXX
32
250000h–257FFFh
SA82
01001011XXX
32
258000h–25FFFFh
SA83
01001100XXX
32
260000h–267FFFh
SA84
01001101XXX
32
268000h–26FFFFh
SA85
01001110XXX
32
270000h–277FFFh
SA86
01001111XXX
32
278000h–27FFFFh
SA87
01010000XXX
32
280000h–287FFFh
SA88
01010001XXX
32
288000h–28FFFFh
SA89
01010010XXX
32
290000h–297FFFh
SA90
01010011XXX
32
298000h–29FFFFh
SA91
01010100XXX
32
2A0000h–2A7FFFh
SA92
01010101XXX
32
2A8000h–2AFFFFh
SA93
01010110XXX
32
2B0000h–2B7FFFh
SA94
01010111XXX
32
2B8000h–2BFFFFh
SA95
01011000XXX
32
2C0000h–2C7FFFh
SA96
01011001XXX
32
2C8000h–2CFFFFh
SA97
01011010XXX
32
2D0000h–2D7FFFh
SA98
01011011XXX
32
2D8000h–2DFFFFh
SA99
01011100XXX
32
2E0000h–2E7FFFh
SA100
01011101XXX
32
2E8000h–2EFFFFh
SA101
01011110XXX
32
2F0000h–2F7FFFh
SA102
01011111XXX
32
2F8000h–2FFFFFh
SA103
01100000XXX
32
300000h–307FFFh
SA104
01100001XXX
32
308000h–30FFFFh
SA105
01100010XXX
32
310000h–317FFFh
SA106
01100011XXX
32
318000h–31FFFFh
SA107
01100100XXX
32
320000h–327FFFh
SA108
01100101XXX
32
328000h–32FFFFh
SA109
01100110XXX
32
330000h–337FFFh
SA110
01100111XXX
32
338000h–33FFFFh
SA111
01101000XXX
32
340000h–347FFFh
SA112
01101001XXX
32
348000h–34FFFFh
SA113
01101010XXX
32
350000h–357FFFh
SA114
01101011XXX
32
358000h–35FFFFh
SA115
01101100XXX
32
360000h–367FFFh
SA116
01101101XXX
32
368000h–36FFFFh
SA117
01101110XXX
32
370000h–377FFFh
SA118
01101111XXX
32
378000h–37FFFFh
Am29PDL127H
June 30, 2003
A D V A N C E
Table 4.
Bank C
Bank B
Bank
June 30, 2003
I N F O R M A T I O N
Am29PDL127H Sector Architecture
Sector
Sector Address (A22-A12)
Sector Size (Kwords)
Address Range (x16)
SA119
01110000XXX
32
380000h–387FFFh
SA120
01110001XXX
32
388000h–38FFFFh
SA121
01110010XXX
32
390000h–397FFFh
SA122
01110011XXX
32
398000h–39FFFFh
SA123
01110100XXX
32
3A0000h–3A7FFFh
SA124
01110101XXX
32
3A8000h–3AFFFFh
SA125
01110110XXX
32
3B0000h–3B7FFFh
SA126
01110111XXX
32
3B8000h–3BFFFFh
SA127
01111000XXX
32
3C0000h–3C7FFFh
SA128
01111001XXX
32
3C8000h–3CFFFFh
SA129
01111010XXX
32
3D0000h–3D7FFFh
SA130
01111011XXX
32
3D8000h–3DFFFFh
SA131
01111100XXX
32
3E0000h–3E7FFFh
SA132
01111101XXX
32
3E8000h–3EFFFFh
SA133
01111110XXX
32
3F0000h–3F7FFFh
SA134
01111111XXX
32
3F8000h–3FFFFFh
SA135
10000000XXX
32
400000h–407FFFh
SA136
10000001XXX
32
408000h–40FFFFh
SA137
10000010XXX
32
410000h–417FFFh
SA138
10000011XXX
32
418000h–41FFFFh
SA139
10000100XXX
32
420000h–427FFFh
SA140
10000101XXX
32
428000h–42FFFFh
SA141
10000110XXX
32
430000h–437FFFh
SA142
10000111XXX
32
438000h–43FFFFh
SA143
10001000XXX
32
440000h–447FFFh
SA144
10001001XXX
32
448000h–44FFFFh
SA145
10001010XXX
32
450000h–457FFFh
SA146
10001011XXX
32
458000h–45FFFFh
SA147
10001100XXX
32
460000h–467FFFh
SA148
10001101XXX
32
468000h–46FFFFh
SA149
10001110XXX
32
470000h–477FFFh
SA150
10001111XXX
32
478000h–47FFFFh
SA151
10010000XXX
32
480000h–487FFFh
SA152
10010001XXX
32
488000h–48FFFFh
SA153
10010010XXX
32
490000h–497FFFh
SA154
10010011XXX
32
498000h–49FFFFh
SA155
10010100XXX
32
4A0000h–4A7FFFh
SA156
10010101XXX
32
4A8000h–4AFFFFh
SA157
10010110XXX
32
4B0000h–4B7FFFh
SA158
10010111XXX
32
4B8000h–4BFFFFh
Am29PDL127H
17
A D V A N C E
Table 4.
Bank C
Bank
18
I N F O R M A T I O N
Am29PDL127H Sector Architecture
Sector
Sector Address (A22-A12)
Sector Size (Kwords)
Address Range (x16)
SA159
10011000XXX
32
4C0000h–4C7FFFh
SA160
10011001XXX
32
4C8000h–4CFFFFh
SA161
10011010XXX
32
4D0000h–4D7FFFh
SA162
10011011XXX
32
4D8000h–4DFFFFh
SA163
10011100XXX
32
4E0000h–4E7FFFh
SA164
10011101XXX
32
4E8000h–4EFFFFh
SA165
10011110XXX
32
4F0000h–4F7FFFh
SA166
10011111XXX
32
4F8000h–4FFFFFh
SA167
10100000XXX
32
500000h–507FFFh
SA168
10100001XXX
32
508000h–50FFFFh
SA169
10100010XXX
32
510000h–517FFFh
SA170
10100011XXX
32
518000h–51FFFFh
SA171
10100100XXX
32
520000h–527FFFh
SA172
10100101XXX
32
528000h–52FFFFh
SA173
10100110XXX
32
530000h–537FFFh
SA174
10100111XXX
32
538000h–53FFFFh
SA175
10101000XXX
32
540000h–547FFFh
SA176
10101001XXX
32
548000h–54FFFFh
SA177
10101010XXX
32
550000h–557FFFh
SA178
10101011XXX
32
558000h–15FFFFh
SA179
10101100XXX
32
560000h–567FFFh
SA180
10101101XXX
32
568000h–56FFFFh
SA181
10101110XXX
32
570000h–577FFFh
SA182
10101111XXX
32
578000h–57FFFFh
SA183
10110000XXX
32
580000h–587FFFh
SA184
10110001XXX
32
588000h–58FFFFh
SA185
10110010XXX
32
590000h–597FFFh
SA186
10110011XXX
32
598000h–59FFFFh
SA187
10110100XXX
32
5A0000h–5A7FFFh
SA188
10110101XXX
32
5A8000h–5AFFFFh
SA189
10110110XXX
32
5B0000h–5B7FFFh
SA190
10110111XXX
32
5B8000h–5BFFFFh
SA191
10111000XXX
32
5C0000h–5C7FFFh
SA192
10111001XXX
32
5C8000h–5CFFFFh
SA193
10111010XXX
32
5D0000h–5D7FFFh
SA194
10111011XXX
32
5D8000h–5DFFFFh
SA195
10111100XXX
32
5E0000h–5E7FFFh
SA196
10111101XXX
32
5E8000h–5EFFFFh
SA197
10111110XXX
32
5F0000h–5F7FFFh
SA198
10111111XXX
32
5F8000h–5FFFFFh
Am29PDL127H
June 30, 2003
A D V A N C E
Table 4.
Bank C
Bank
June 30, 2003
I N F O R M A T I O N
Am29PDL127H Sector Architecture
Sector
Sector Address (A22-A12)
Sector Size (Kwords)
Address Range (x16)
SA199
11000000XXX
32
600000h–607FFFh
SA200
11000001XXX
32
608000h–60FFFFh
SA201
11000010XXX
32
610000h–617FFFh
SA202
11000011XXX
32
618000h–61FFFFh
SA203
11000100XXX
32
620000h–627FFFh
SA204
11000101XXX
32
628000h–62FFFFh
SA205
11000110XXX
32
630000h–637FFFh
SA206
11000111XXX
32
638000h–63FFFFh
SA207
11001000XXX
32
640000h–647FFFh
SA208
11001001XXX
32
648000h–64FFFFh
SA209
11001010XXX
32
650000h–657FFFh
SA210
11001011XXX
32
658000h–65FFFFh
SA211
11001100XXX
32
660000h–667FFFh
SA212
11001101XXX
32
668000h–66FFFFh
SA213
11001110XXX
32
670000h–677FFFh
SA214
11001111XXX
32
678000h–67FFFFh
SA215
11010000XXX
32
680000h–687FFFh
SA216
11010001XXX
32
688000h–68FFFFh
SA217
11010010XXX
32
690000h–697FFFh
SA218
11010011XXX
32
698000h–69FFFFh
SA219
11010100XXX
32
6A0000h–6A7FFFh
SA220
11010101XXX
32
6A8000h–6AFFFFh
SA221
11010110XXX
32
6B0000h–6B7FFFh
SA222
11010111XXX
32
6B8000h–6BFFFFh
SA223
11011000XXX
32
6C0000h–6C7FFFh
SA224
11011001XXX
32
6C8000h–6CFFFFh
SA225
11011010XXX
32
6D0000h–6D7FFFh
SA226
11011011XXX
32
6D8000h–6DFFFFh
SA227
11011100XXX
32
6E0000h–6E7FFFh
SA228
11011101XXX
32
6E8000h–6EFFFFh
SA229
11011110XXX
32
6F0000h–6F7FFFh
SA230
11011111XXX
32
6F8000h–6FFFFFh
Am29PDL127H
19
A D V A N C E
Table 4.
Bank D
Bank
20
I N F O R M A T I O N
Am29PDL127H Sector Architecture
Sector
Sector Address (A22-A12)
Sector Size (Kwords)
Address Range (x16)
SA231
11100000XXX
32
700000h–707FFFh
SA232
11100001XXX
32
708000h–70FFFFh
SA233
11100010XXX
32
710000h–717FFFh
SA234
11100011XXX
32
718000h–71FFFFh
SA235
11100100XXX
32
720000h–727FFFh
SA236
11100101XXX
32
728000h–72FFFFh
SA237
11100110XXX
32
730000h–737FFFh
SA238
11100111XXX
32
738000h–73FFFFh
SA239
11101000XXX
32
740000h–747FFFh
SA240
11101001XXX
32
748000h–74FFFFh
SA241
11101010XXX
32
750000h–757FFFh
SA242
11101011XXX
32
758000h–75FFFFh
SA243
11101100XXX
32
760000h–767FFFh
SA244
11101101XXX
32
768000h–76FFFFh
SA245
11101110XXX
32
770000h–777FFFh
SA246
11101111XXX
32
778000h–77FFFFh
SA247
11110000XXX
32
780000h–787FFFh
SA248
11110001XXX
32
788000h–78FFFFh
SA249
11110010XXX
32
790000h–797FFFh
SA250
11110011XXX
32
798000h–79FFFFh
SA251
11110100XXX
32
7A0000h–7A7FFFh
SA252
11110101XXX
32
7A8000h–7AFFFFh
SA253
11110110XXX
32
7B0000h–7B7FFFh
SA254
11110111XXX
32
7B8000h–7BFFFFh
SA255
11111000XXX
32
7C0000h–7C7FFFh
SA256
11111001XXX
32
7C8000h–7CFFFFh
SA257
11111010XXX
32
7D0000h–7D7FFFh
SA258
11111011XXX
32
7D8000h–7DFFFFh
SA259
11111100XXX
32
7E0000h–7E7FFFh
SA260
11111101XXX
32
7E8000h–7EFFFFh
SA261
11111110XXX
32
7F0000h–7F7FFFh
SA262
11111111000
4
7F8000h–7F8FFFh
SA263
11111111001
4
7F9000h–7F9FFFh
SA264
11111111010
4
7FA000h–7FAFFFh
SA265
11111111011
4
7FB000h–7FBFFFh
SA266
11111111100
4
7FC000h–7FCFFFh
SA267
11111111101
4
7FD000h–7FDFFFh
SA268
11111111110
4
7FE000h–7FEFFFh
SA269
11111111111
4
7FF000h–7FFFFFh
Am29PDL127H
June 30, 2003
A D V A N C E
Table 5.
I N F O R M A T I O N
SecSiTM Sector Addresses
Am29PDL127H
Sector Size
Address Range
128 words
000000h–00007Fh
Factory-Locked Area
64 words
000000h-00003Fh
Customer-Lockable Area
64 words
000040h-00007Fh
Autoselect Mode
The autoselect mode provides manufacturer and device identification, and sector protection verification,
through identifier codes output on DQ7–DQ0. This
mode is primarily intended for programming equipment to automatically match a device to be programmed with its corresponding programm ing
algorithm. However, the autoselect codes can also be
accessed in-system through the command register.
When using programming equipment, the autoselect
mode requires VID on address pin A9. Address pins
must be as shown in Table 6. In addition, when verifying sector protection, the sector address must appear
on the appropriate highest order address bits (see
June 30, 2003
Table 4). Table 6 shows the remaining address bits
that are don’t care. When all necessary bits have been
set as required, the programming equipment may then
read the corresponding identifier code on DQ7–DQ0.
However, the autoselect codes can also be accessed
in-system through the command register, for instances
when the device is erased or programmed in a system
without access to high voltage on the A9 pin. The
command sequence is illustrated in Table 13. Note
that if a Bank Address (BA) on address bits A22–A20
is asserted during the third write cycle of the autoselect command, the host system can read autoselect
data that bank and then immediately read array data
from the other bank, without exiting the autoselect
mode.
To access the autoselect codes in-system, the host
system can issue the autoselect command via the
command register, as shown in Table 13. This method
does not require V ID . Refer to the Autoselect Command Sequence section for more information.
Am29PDL127H
21
A D V A N C E
Table 6.
I N F O R M A T I O N
Autoselect Codes (High Voltage Method)
CE#
OE#
WE#
A22
to
A12
A10
A9
A8
A7
A6
A5
to
A4
A3
A2
A1
A0
DQ15
to DQ0
Manufacturer ID:
AMD
L
L
H
X
X
VID
X
L
L
X
L
L
L
L
0001h
Read
Cycle 1
L
L
L
L
H
227Eh
Read
Cycle 2
L
H
H
H
L
2220
Read
Cycle 3
L
H
H
H
H
2200h
Device ID
Description
L
H
X
X
VID
X
L
L
L
Sector Protection
Verification
L
L
H
SA
X
VID
X
L
L
L
L
L
H
L
0001h (protected),
0000h (unprotected)
SecSi Indicator Bit
(DQ7, DQ6)
L
L
H
X
X
VID
X
X
L
X
L
L
H
H
00C0h (factory and
customer locked),
0080h (factory
locked)
Legend: L = Logic Low = VIL, H = Logic High = VIH, BA = Bank Address, SA = Sector Address, X = Don’t care. Note: The autoselect codes may also
be accessed in-system via command sequences
22
Am29PDL127H
June 30, 2003
A D V A N C E
I N F O R M A T I O N
Table 7. Am29PDL127H Boot Sector/Sector Block
Addresses for Protection/Unprotection
Sector
A22-A12
Sector/
Sector Block Size
011111XXXXX
128 (4x32) Kwords
A22-A12
Sector/
Sector Block Size
SA131-SA134
Sector
SA135-SA138
100000XXXXX
128 (4x32) Kwords
SA0
00000000000
4 Kwords
SA139-SA142
100001XXXXX
128 (4x32) Kwords
SA1
00000000001
4 Kwords
SA143-SA146
100010XXXXX
128 (4x32) Kwords
SA2
00000000010
4 Kwords
SA147-SA150
100011XXXXX
128 (4x32) Kwords
SA3
00000000011
4 Kwords
SA151-SA154
100100XXXXX
128 (4x32) Kwords
SA4
00000000100
4 Kwords
SA155-SA158
100101XXXXX
128 (4x32) Kwords
SA5
00000000101
4 Kwords
SA159-SA162
100110XXXXX
128 (4x32) Kwords
SA6
00000000110
4 Kwords
SA163-SA166
100111XXXXX
128 (4x32) Kwords
SA7
00000000111
4 Kwords
SA167-SA170
101000XXXXX
128 (4x32) Kwords
SA171-SA174
101001XXXXX
128 (4x32) Kwords
SA8-SA10
00000001XXX
00000010XXX
00000011XXX
96 (3x32) Kwords
SA175-SA178
101010XXXXX
128 (4x32) Kwords
SA179-SA182
101011XXXXX
128 (4x32) Kwords
128 (4x32) Kwords
SA11-SA14
000001XXXXX
128 (4x32) Kwords
SA183-SA186
101100XXXXX
SA15-SA18
000010XXXXX
128 (4x32) Kwords
SA187-SA190
101101XXXXX
128 (4x32) Kwords
SA19-SA22
000011XXXXX
128 (4x32) Kwords
SA191-SA194
101110XXXXX
128 (4x32) Kwords
SA23-SA26
000100XXXXX
128 (4x32) Kwords
SA195-SA198
101111XXXXX
128 (4x32) Kwords
SA27-SA30
000101XXXXX
128 (4x32) Kwords
SA199-SA202
110000XXXXX
128 (4x32) Kwords
SA31-SA34
000110XXXXX
128 (4x32) Kwords
SA203-SA206
110001XXXXX
128 (4x32) Kwords
SA35-SA38
000111XXXXX
128 (4x32) Kwords
SA207-SA210
110010XXXXX
128 (4x32) Kwords
SA39-SA42
001000XXXXX
128 (4x32) Kwords
SA211-SA214
110011XXXXX
128 (4x32) Kwords
SA43-SA46
001001XXXXX
128 (4x32) Kwords
SA215-SA218
110100XXXXX
128 (4x32) Kwords
SA47-SA50
001010XXXXX
128 (4x32) Kwords
SA219-SA222
110101XXXXX
128 (4x32) Kwords
SA51-SA54
001011XXXXX
128 (4x32) Kwords
SA223-SA226
110110XXXXX
128 (4x32) Kwords
SA55-SA58
001100XXXXX
128 (4x32) Kwords
SA227-SA230
110111XXXXX
128 (4x32) Kwords
SA59-SA62
001101XXXXX
128 (4x32) Kwords
SA231-SA234
111000XXXXX
128 (4x32) Kwords
SA63-SA66
001110XXXXX
128 (4x32) Kwords
SA235-SA238
111001XXXXX
128 (4x32) Kwords
SA67-SA70
001111XXXXX
128 (4x32) Kwords
SA239-SA242
111010XXXXX
128 (4x32) Kwords
SA71-SA74
010000XXXXX
128 (4x32) Kwords
SA243-SA246
111011XXXXX
128 (4x32) Kwords
SA75-SA78
010001XXXXX
128 (4x32) Kwords
SA247-SA250
111100XXXXX
128 (4x32) Kwords
SA79-SA82
010010XXXXX
128 (4x32) Kwords
SA251-SA254
111101XXXXX
128 (4x32) Kwords
SA83-SA86
010011XXXXX
128 (4x32) Kwords
SA255-SA258
111110XXXXX
128 (4x32) Kwords
SA87-SA90
010100XXXXX
128 (4x32) Kwords
SA91-SA94
010101XXXXX
128 (4x32) Kwords
SA259-SA261
96 (3x32) Kwords
SA95-SA98
010110XXXXX
128 (4x32) Kwords
11111100XXX
11111101XXX
11111110XXX
SA99-SA102
010111XXXXX
128 (4x32) Kwords
SA262
11111111000
4 Kwords
4 Kwords
SA103-SA106
011000XXXXX
128 (4x32) Kwords
SA263
11111111001
SA107-SA110
011001XXXXX
128 (4x32) Kwords
SA264
11111111010
4 Kwords
SA111-SA114
011010XXXXX
128 (4x32) Kwords
SA265
11111111011
4 Kwords
4 Kwords
SA115-SA118
011011XXXXX
128 (4x32) Kwords
SA266
11111111100
SA119-SA122
011100XXXXX
128 (4x32) Kwords
SA267
11111111101
4 Kwords
SA123-SA126
011101XXXXX
128 (4x32) Kwords
SA268
11111111110
4 Kwords
SA127-SA130
011110XXXXX
128 (4x32) Kwords
SA269
11111111111
4 Kwords
June 30, 2003
Am29PDL127H
23
A D V A N C E
I N F O R M A T I O N
SECTOR PROTECTION
The Am29PDL127H features several levels of sector
protection, which can disable both the program and
erase operations in certain sectors or sector groups:
■ Persistently Locked—The sector is protected and
cannot be changed.
Persistent Sector Protection
■ Dynamically Locked—The sector is protected and
can be changed by a simple command.
A command sector protection method that replaces
the old 12 V controlled protection method.
■ Unlocked—The sector is unprotected and can be
changed by a simple command.
Password Sector Protection
To achieve these states, three types of “bits” are used:
A highly sophisticated protection method that requires
a password before changes to certain sectors or sector groups are permitted
Persistent Protection Bit (PPB)
WP# Hardware Protection
A write protect pin that can prevent program or erase
operations in sectors 0, 1, 268, and 269.
The WP# Hardware Protection feature is always available, independent of the software managed protection
method chosen.
Selecting a Sector Protection Mode
All parts default to operate in the Persistent Sector
Protection mode. The customer must then choose if
the Persistent or Password Protection method is most
desirable. There are two one-time programmable
non-volatile bits that define which sector protection
method will be used. If the Persistent Sector Protection method is desired, programming the Persistent
Sector Protection Mode Locking Bit permanently
sets the device to the Persistent Sector Protection
mode. If the Password Sector Protection method is
desired, programming the Password Mode Locking
Bit permanently sets the device to the Password Sector Protection mode. It is not possible to switch between the two protection modes once a locking bit has
been set. One of the two modes must be selected
when the device is first programmed. This prevents
a program or virus from later setting the Password
Mode Locking Bit, which would cause an unexpected
shift from the default Persistent Sector Protection
Mode into the Password Protection Mode.
The device is shipped with all sectors unprotected.
AMD offers the option of programming and protecting
sectors at the factory prior to shipping the device
through AMD’s ExpressFlash™ Service. Contact an
AMD representative for details.
It is possible to determine whether a sector is protected or unprotected. See Autoselect Mode for details.
Persistent Sector Protection
The Persistent Sector Protection method replaces the
12 V controlled protection method in previous AMD
flash devices. This new method provides three different sector protection states:
24
A single Persistent (non-volatile) Protection Bit is assigned to a maximum four sectors (see the sector address tables for specific sector protection groupings).
All 4 Kword boot-block sectors have individual sector
Persistent Protection Bits (PPBs) for greater flexibility.
Each PPB is individually modifiable through the PPB
Write Command.
The device erases all PPBs in parallel. If any PPB requires erasure, the device must be instructed to preprogram all of the sector PPBs prior to PPB erasure.
Otherwise, a previously erased sector PPBs can potentially be over-erased. The flash device does not
have a built-in means of preventing sector PPBs
over-erasure.
Persistent Protection Bit Lock (PPB Lock)
The Persistent Protection Bit Lock (PPB Lock) is a global volatile bit. When set to “1”, the PPBs cannot be
changed. When cleared (“0”), the PPBs are changeable. There is only one PPB Lock bit per device. The
PPB Lock is cleared after power-up or hardware reset.
There is no command sequence to unlock the PPB
Lock.
Dynamic Protection Bit (DYB)
A volatile protection bit is assigned for each sector.
After power-up or hardware reset, the contents of all
DYBs is “0”. Each DYB is individually modifiable
through the DYB Write Command.
When the parts are first shipped, the PPBs are
cleared, the DYBs are cleared, and PPB Lock is defaulted to power up in the cleared state – meaning the
PPBs are changeable.
When the device is first powered on the DYBs power
up cleared (sectors not protected). The Protection
State for each sector is determined by the logical OR
of the PPB and the DYB related to that sector. For the
sectors that have the PPBs cleared, the DYBs control
whether or not the sector is protected or unprotected.
By issuing the DYB Write command sequences, the
DYBs will be set or cleared, thus placing each sector
in the protected or unprotected state. These are the
so-called Dynamic Locked or Unlocked states. They
are called dynamic states because it is very easy to
Am29PDL127H
June 30, 2003
A D V A N C E
I N F O R M A T I O N
switch back and forth between the protected and unprotected conditions. This allows software to easily
protect sectors against inadvertent changes yet does
not prevent the easy removal of protection when
changes are needed. The DYBs maybe set or cleared
as often as needed.
The PPBs allow for a more static, and difficult to
change, level of protection. The PPBs retain their state
across power cycles because they are non-volatile. Individual PPBs are set with a command but must all be
cleared as a group through a complex sequence of
program and erasing commands. The PPBs are also
limited to 100 erase cycles.
The PPB Lock bit adds an additional level of protection. Once all PPBs are programmed to the desired
settings, the PPB Lock may be set to “1”. Setting the
PPB Lock disables all program and erase commands
to the non-volatile PPBs. In effect, the PPB Lock Bit
locks the PPBs into their current state. The only way to
clear the PPB Lock is to go through a power cycle.
System boot code can determine if any changes to the
PPB are needed; for example, to allow new system
code to be downloaded. If no changes are needed
then the boot code can set the PPB Lock to disable
any further changes to the PPBs during system operation.
The WP#/ACC write protect pin adds a final level of
hardware protection to sectors 0, 1, 268, and 269.
When this pin is low it is not possible to change the
contents of these sectors. These sectors generally
hold system boot code. The WP#/ACC pin can prevent any changes to the boot code that could override
the choices made while setting up sector protection
during system initialization.
It is possible to have sectors that have been persistently locked, and sectors that are left in the dynamic
state. The sectors in the dynamic state are all unprotected. If there is a need to protect some of them, a
simple DYB Write command sequence is all that is
necessary. The DYB write command for the dynamic
sectors switch the DYBs to signify protected and unprotected, respectively. If there is a need to change
the status of the persistently locked sectors, a few
more steps are required. First, the PPB Lock bit must
be disabled by either putting the device through a
power-cycle, or hardware reset. The PPBs can then
be changed to reflect the desired settings. Setting the
PPB lock bit once again will lock the PPBs, and the
device operates normally again.
The best protection is achieved by executing the PPB
lock bit set command early in the boot code, and protect the boot code by holding WP#/ACC = VIL.
June 30, 2003
Table 8.
Sector Protection Schemes
DYB
PPB
PPB
Lock
0
0
0
Unprotected—PPB and DYB are
changeable
0
0
1
Unprotected—PPB not
changeable, DYB is changeable
0
1
0
1
0
0
1
1
0
0
1
1
1
0
1
1
1
1
Sector State
Protected—PPB and DYB are
changeable
Protected—PPB not
changeable, DYB is changeable
Table 8 contains all possible combinations of the DYB,
PPB, and PPB lock relating to the status of the sector.
In summary, if the PPB is set, and the PPB lock is set,
the sector is protected and the protection can not be
removed until the next power cycle clears the PPB
lock. If the PPB is cleared, the sector can be dynamically locked or unlocked. The DYB then controls
whether or not the sector is protected or unprotected.
If the user attempts to program or erase a protected
sector, the device ignores the command and returns to
read mode. A program command to a protected sector
enables status polling for approximately 1 µs before
the device returns to read mode without having modified the contents of the protected sector. An erase
command to a protected sector enables status polling
for approximately 50 µs after which the device returns
to read mode without having erased the protected sector.
The programming of the DYB, PPB, and PPB lock for
a given sector can be verified by writing a
DYB/PPB/PPB lock verify command to the device.
Persistent Sector Protection Mode Locking Bit
Like the password mode locking bit, a Persistent Sector Protection mode locking bit exists to guarantee that
the device remain in software sector protection. Once
set, the Persistent Sector Protection locking bit prevents programming of the password protection mode
locking bit. This guarantees that a hacker could not
place the device in password protection mode.
Password Protection Mode
The Password Sector Protection Mode method allows
an even higher level of security than the Persistent
Sector Protection Mode. There are two main differences between the Persistent Sector Protection and
the Password Sector Protection Mode:
Am29PDL127H
25
A D V A N C E
I N F O R M A T I O N
■ When the device is first powered on, or comes out
of a reset cycle, the PPB Lock bit set to the locked
state, rather than cleared to the unlocked state.
■ The only means to clear the PPB Lock bit is by writing a unique 64-bit Password to the device.
The Password Sector Protection method is otherwise
identical to the Persistent Sector Protection method.
A 64-bit password is the only additional tool utilized in
this method.
Once the Password Mode Locking Bit is set, the password is permanently set with no means to read, program, or erase it. The password is used to clear the
PPB Lock bit. The Password Unlock command must
be written to the flash, along with a password. The
flash device internally compares the given password
with the pre-programmed password. If they match, the
PPB Lock bit is cleared, and the PPBs can be altered.
If they do not match, the flash device does nothing.
There is a built-in 2 µs delay for each “password
check.” This delay is intended to thwart any efforts to
run a program that tries all possible combinations in
order to crack the password.
Password and Password Mode Locking Bit
In order to select the Password sector protection
scheme, the customer must first program the password. The password may be correlated to the unique
Electronic Serial Number (ESN) of the particular flash
device. Each ESN is different for every flash device;
therefore each password should be different for every
flash device. While programming in the password region, the customer may perform Password Verify operations.
Once the desired password is programmed in, the
customer must then set the Password Mode Locking
Bit. This operation achieves two objectives:
1. Permanently sets the device to operate using the
Password Protection Mode. It is not possible to reverse this function.
2. Disables all further commands to the password region. All program, and read operations are ignored.
Both of these objectives are important, and if not carefully considered, may lead to unrecoverable errors.
The user must be sure that the Password Protection
method is desired when setting the Password Mode
Locking Bit. More importantly, the user must be sure
that the password is correct when the Password Mode
Locking Bit is set. Due to the fact that read operations
are disabled, there is no means to verify what the
password is afterwards. If the password is lost after
setting the Password Mode Locking Bit, there will be
no way to clear the PPB Lock bit.
The Password Mode Locking Bit, once set, prevents
reading the 64-bit password on the DQ bus and further
26
password programming. The Password Mode Locking
Bit is not erasable. Once Password Mode Locking Bit
is programmed, the Persistent Sector Protection Locking Bit is disabled from programming, guaranteeing
that no changes to the protection scheme are allowed.
64-bit Password
The 64-bit Password is located in its own memory
space and is accessible through the use of the Password Program and Verify commands (see “Password
Verify Command”). The password function works in
conjunction with the Password Mode Locking Bit,
which when set, prevents the Password Verify command from reading the contents of the password on
the pins of the device.
Write Protect (WP#)
The Write Protect feature provides a hardware method
of protecting sectors 0, 1, 268, and 269 without using
VID. This function is provided by the WP# pin and overrides the previously discussed High Voltage Sector
Protection method.
If the system asserts VIL on the WP#/ACC pin, the device disables program and erase functions in the two
outermost 4 Kword sectors on both ends of the flash
array independent of whether it was previously protected or unprotected.
If the system asserts VIH on the WP#/ACC pin, the device reverts to whether sectors 0, 1, 268, and 269
were last set to be protected or unprotected. That is,
sector protection or unprotection for these sectors depends on whether they were last protected or unprotected using the method described in High Voltage
Sector Protection.
Note that the WP#/ACC pin must not be left floating or
unconnected; inconsistent behavior of the device may
result.
Persistent Protection Bit Lock
The Persistent Protection Bit (PPB) Lock is a volatile
bit that reflects the state of the Password Mode Locking Bit after power-up reset. If the Password Mode
Lock Bit is also set after a hardware reset (RESET#
asserted) or a power-up reset, the ONLY means for
clearing the PPB Lock Bit in Password Protection
Mode is to issue the Password Unlock command. Successful execution of the Password Unlock command
clears the PPB Lock Bit, allowing for sector PPBs
modifications. Asserting RESET#, taking the device
through a power-on reset, or issuing the PPB Lock Bit
Set command sets the PPB Lock Bit to a “1” when the
Password Mode Lock Bit is not set.
If the Password Mode Locking Bit is not set, including
Persistent Protection Mode, the PPB Lock Bit is
cleared after power-up or hardware reset. The PPB
Am29PDL127H
June 30, 2003
A D V A N C E
I N F O R M A T I O N
Lock Bit is set by issuing the PPB Lock Bit Set command. Once set the only means for clearing the PPB
Lock Bit is by issuing a hardware or power-up reset.
The Password Unlock command is ignored in Persistent Protection Mode.
June 30, 2003
High Voltage Sector Protection
Sector protection and unprotection may also be implemented using programming equipment. The procedure requires high voltage (VID) to be placed on the
RESET# pin. Refer to Figure 1 for details on this procedure. Note that for sector unprotect, all unprotected
sectors must first be protected prior to the first sector
write cycle.
Am29PDL127H
27
A D V A N C E
I N F O R M A T I O N
START
START
Protect all sectors:
The indicated portion
of the sector protect
algorithm must be
performed for all
unprotected sectors
prior to issuing the
first sector
unprotect address
PLSCNT = 1
RESET# = VID
Wait 4 µs
Temporary Sector
Unprotect Mode
No
PLSCNT = 1
RESET# = VID
Wait 4 µs
First Write
Cycle = 60h?
First Write
Cycle = 60h?
Temporary Sector
Unprotect Mode
Yes
Yes
Set up sector
address
No
All sectors
protected?
Sector Protect:
Write 60h to sector
address with
A7-A0 =
00000010
Yes
Set up first sector
address
Sector Unprotect:
Write 60h to sector
address with
A7-A0 =
01000010
Wait 100 µs
Increment
PLSCNT
No
Verify Sector
Protect: Write 40h
to sector address
with A7-A0 =
00000010
Reset
PLSCNT = 1
Read from
sector address
with A7-A0 =
00000010
Wait 1.2 ms
Verify Sector
Unprotect: Write
40h to sector
address with
A7-A0 =
00000010
Increment
PLSCNT
No
No
PLSCNT
= 25?
Yes
Yes
Remove VID
from RESET#
No
Yes
Protect another
sector?
PLSCNT
= 1000?
No
Write reset
command
Remove VID
from RESET#
Sector Protect
complete
Write reset
command
Device failed
Read from
sector address
with A7-A0 =
00000010
Data = 01h?
Sector Protect
complete
Sector Protect
Algorithm
Yes
Remove VID
from RESET#
Write reset
command
Set up
next sector
address
No
Data = 00h?
Yes
Last sector
verified?
No
Yes
Remove VID
from RESET#
Sector Unprotect
complete
Write reset
command
Device failed
Sector Unprotect
complete
Sector Unprotect
Algorithm
Figure 1. In-System Sector Protection/
Sector Unprotection Algorithms
28
Am29PDL127H
June 30, 2003
A D V A N C E
I N F O R M A T I O N
Temporary Sector Unprotect
This feature allows temporary unprotection of previously protected sectors to change data in-system. The
Sector Unprotect mode is activated by setting the RESET# pin to VID. During this mode, formerly protected
sectors can be programmed or erased by selecting the
sector addresses. Once VID is removed from the RESET# pin, all the previously protected sectors are
protected again. Figure 2 shows the algorithm, and
Figure 22 shows the timing diagrams, for this feature.
While PPB lock is set, the device cannot enter the
Temporary Sector Unprotection Mode.
The factory-locked area of the SecSi Sector
(000000h-00003Fh) is locked when the part is
shipped, whether or not the area was programmed at
the factory. The SecSi Sector Factory-locked Indicator
Bit (DQ7) is permanently set to a “1”. AMD offers the
ExpressFlash service to program the factory-locked
area with a random ESN, a customer-defined code, or
any combination of the two. Because only AMD can
program and protect the factory-locked area, this
method ensures the security of the ESN once the
product is shipped to the field. Contact an AMD representative for details on using AMD’s ExpressFlash
service.
RESET# = VID
(Note 1)
Perform Erase or
Program Operations
RESET# = VIH
Temporary Sector
Unprotect Completed
(Note 2)
Customer-Lockable Area (64 words)
Notes:
1. All protected sectors unprotected (If WP#/ACC = VIL,
sectors 0, 1, 268, 269 will remain protected).
2. All previously protected sectors are protected once
again.
Temporary Sector Unprotect Operation
The customer-lockable area of the SecSi Sector
(000040h-00007Eh) is shipped unprotected, which allows the customer to program and optionally lock the
area as appropriate for the application. The SecSi
Sector Customer-locked Indicator Bit (DQ6) is shipped
as “0” and can be permanently locked to “1” by issuing
the SecSi Protection Bit Program Command. The
SecSi Sector can be read any number of times, but
can be programmed and locked only once. Note that
the accelerated programming (ACC) and unlock bypass functions are not available when programming
the SecSi Sector.
The Customer-lockable SecSi Sector area can be protected using one of the following procedures:
SecSi™ (Secured Silicon) Sector
Flash Memory Region
The SecSi (Secured Silicon) Sector feature provides a
Flash memory region that enables permanent part
identification through an Electronic Serial Number
(ESN) The 128-word SecSi sector is divided into 64
factory-lockable words that can be programmed and
locked by the customer. The SecSi sector is located at
addresses 000000h-00007Fh in both Persistent Protection mode and Password Protection mode. It uses
June 30, 2003
The system accesses the SecSi Sector through a
command sequence (see “Enter SecSi™ Sector/Exit
SecSi Sector Command Sequence”). After the system
has written the Enter SecSi Sector command sequence, it may read the SecSi Sector by using the addresses normally occupied by the boot sectors. This
mode of operation continues until the system issues
the Exit SecSi Sector command sequence, or until
power is removed from the device. On power-up, or
following a hardware reset, the device reverts to sending commands to the normal address space. Note that
the ACC function and unlock bypass modes are not
available when the SecSi Sector is enabled.
Factory-Locked Area (64 words)
START
Figure 2.
i nd ica tor b its ( D Q6 , D Q7 ) to i nd ica te th e factory-locked and customer-locked status of the part.
■ Write the three-cycle Enter SecSi Sector Region
command sequence, and then follow the in-system
sector protect algorithm as shown in Figure 1, except that RESET# may be at either VIH or VID. This
allows in-system protection of the SecSi Sector Region without raising any device pin to a high voltage.
Note that this method is only applicable to the SecSi
Sector.
■ To verify the protect/unprotect status of the SecSi
Sector, follow the algorithm shown in Figure 3.
Am29PDL127H
29
A D V A N C E
I N F O R M A T I O N
Once the SecSi Sector is locked and verified, the system must write the Exit SecSi Sector Region command sequence to return to reading and writing the
remainder of the array.
The SecSi Sector lock must be used with caution
since, once locked, there is no procedure available for
unlocking the SecSi Sector area and none of the bits
in the SecSi Sector memory space can be modified in
any way.
SecSi Sector Protection Bits
The SecSi Sector Protection Bits prevent programming of the SecSi Sector memory area. Once set, the
SecSi Sector memory area contents are non-modifiable.
power-up and power-down. The command register
and all internal program/erase circuits are disabled,
and the device resets to the read mode. Subsequent
writes are ignored until VCC is greater than VLKO. The
system must provide the proper signals to the control
pins to prevent unintentional writes when V CC is
greater than VLKO.
Write Pulse “Glitch” Protection
Noise pulses of less than 3 ns (typical) on OE#, CE#,
or WE# do not initiate a write cycle.
Logical Inhibit
Write cycles are inhibited by holding any one of OE# =
VIL, CE# = VIH or WE# = V IH. To initiate a write cycle,
CE# and WE# must be a logical zero while OE# is a
logical one.
Power-Up Write Inhibit
If WE# = CE# = VIL and OE# = VIH during power up,
the device does not accept commands on the rising
edge of WE#. The internal state machine is automatically reset to the read mode on power-up.
START
RESET# =
VIH or VID
Wait 1 µs
Write 60h to
any address
Write 40h to SecSi
Sector address
with A6 = 0,
A1 = 1, A0 = 0
Read from SecSi
Sector address
with A6 = 0,
A1 = 1, A0 = 0
Figure 3.
If data = 00h,
SecSi Sector is
unprotected.
If data = 01h,
SecSi Sector is
protected.
COMMON FLASH MEMORY INTERFACE
(CFI)
The Common Flash Interface (CFI) specification outlines device and host system software interrogation
handshake, which allows specific vendor-specified
software algorithms to be used for entire families of
devices. Software support can then be device-independent, JEDEC ID-independent, and forward- and
backward-compatible for the specified flash device
families. Flash vendors can standardize their existing
interfaces for long-term compatibility.
Remove VIH or VID
from RESET#
Write reset
command
SecSi Sector
Protect Verify
complete
This device enters the CFI Query mode when the system writes the CFI Query command, 98h, to address
55h, any time the device is ready to read array data.
The system can read CFI information at the addresses
given in Tables 9–12. To terminate reading CFI data,
the system must write the reset command. The CFI
Query mode is not accessible when the device is executing an Embedded Program or embedded Erase algorithm.
SecSi Sector Protect Verify
Hardware Data Protection
The command sequence requirement of unlock cycles
for programming or erasing provides data protection
against inadvertent writes. In addition, the following
hardware data protection measures prevent accidental
erasure or programming, which might otherwise be
caused by spurious system level signals during VCC
power-up and power-down transitions, or from system
noise.
Low VCC Write Inhibit
When VCC is less than V LKO, the device does not accept any write cycles. This protects data during VCC
30
The system can also write the CFI query command
when the device is in the autoselect mode. The device
enters the CFI query mode, and the system can read
CFI data at the addresses given in Tables 9–12. The
system must write the reset command to return the device to reading array data.
For further information, please refer to the CFI Specification and CFI Publication 100, available via the
World Wide Web at http://www.amd.com/flash/cfi. Alternatively, contact an AMD representative for copies
of these documents.
Am29PDL127H
June 30, 2003
A D V A N C E
Table 9.
I N F O R M A T I O N
CFI Query Identification String
Addresses
Data
Description
10h
11h
12h
0051h
0052h
0059h
Query Unique ASCII string “QRY”
13h
14h
0002h
0000h
Primary OEM Command Set
15h
16h
0040h
0000h
Address for Primary Extended Table
17h
18h
0000h
0000h
Alternate OEM Command Set (00h = none exists)
19h
1Ah
0000h
0000h
Address for Alternate OEM Extended Table (00h = none exists)
Table 10.
System Interface String
Addresses
Data
1Bh
0027h
VCC Min. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Ch
0036h
VCC Max. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Dh
0000h
VPP Min. voltage (00h = no VPP pin present)
1Eh
0000h
VPP Max. voltage (00h = no VPP pin present)
1Fh
0004h
Typical timeout per single byte/word write 2N µs
20h
0000h
Typical timeout for Min. size buffer write 2N µs (00h = not supported)
21h
0009h
Typical timeout per individual block erase 2N ms
22h
0000h
Typical timeout for full chip erase 2N ms (00h = not supported)
23h
0005h
Max. timeout for byte/word write 2N times typical
24h
0000h
Max. timeout for buffer write 2N times typical
25h
0004h
Max. timeout per individual block erase 2N times typical
26h
0000h
Max. timeout for full chip erase 2N times typical (00h = not supported)
June 30, 2003
Description
Am29PDL127H
31
A D V A N C E
Table 11.
32
I N F O R M A T I O N
Device Geometry Definition
Addresses
Data
Description
27h
0018h
Device Size = 2N byte
28h
29h
0001h
0000h
Flash Device Interface description (refer to CFI publication 100)
2Ah
2Bh
0000h
0000h
Max. number of byte in multi-byte write = 2N
(00h = not supported)
2Ch
0003h
Number of Erase Block Regions within device
2Dh
2Eh
2Fh
30h
0007h
0000h
0020h
0000h
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
31h
32h
33h
34h
00FDh
0000h
0000h
0001h
Erase Block Region 2 Information
(refer to the CFI specification or CFI publication 100)
35h
36h
37h
38h
0007h
0000h
0020h
0000h
Erase Block Region 3 Information
(refer to the CFI specification or CFI publication 100)
39h
3Ah
3Bh
3Ch
0000h
0000h
0000h
0000h
Erase Block Region 4 Information
(refer to the CFI specification or CFI publication 100)
Am29PDL127H
June 30, 2003
A D V A N C E
Table 12.
I N F O R M A T I O N
Primary Vendor-Specific Extended Query
Addresses
Data
Description
40h
41h
42h
0050h
0052h
0049h
Query-unique ASCII string “PRI”
43h
0031h
Major version number, ASCII (reflects modifications to the silicon)
44h
0033h
Minor version number, ASCII (reflects modifications to the CFI table)
45h
000Ch
Address Sensitive Unlock (Bits 1-0)
0 = Required, 1 = Not Required
Silicon Revision Number (Bits 7-2)
46h
0002h
Erase Suspend
0 = Not Supported, 1 = To Read Only, 2 = To Read & Write
47h
0001h
Sector Protect
0 = Not Supported, X = Number of sectors in per group
48h
0001h
Sector Temporary Unprotect
00 = Not Supported, 01 = Supported
49h
0007h
Sector Protect/Unprotect scheme
01 =29F040 mode, 02 = 29F016 mode, 03 = 29F400, 04 = 29LV800 mode
4Ah
00E7h
Simultaneous Operation
00 = Not Supported, X = Number of Sectors excluding Bank 1
4Bh
0000h
Burst Mode Type
00 = Not Supported, 01 = Supported
4Ch
0002h
Page Mode Type
00 = Not Supported, 01 = 4 Word Page, 02 = 8 Word Page
4Dh
0085h
4Eh
0095h
4Fh
0001h
50h
0001h
57h
0004h
58h
0027h
59h
0060h
5Ah
0060h
5Bh
0027h
ACC (Acceleration) Supply Minimum
00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV
ACC (Acceleration) Supply Maximum
00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV
Top/Bottom Boot Sector Flag
June 30, 2003
00h = Uniform device, 02h = Bottom Boot Device, 03h = Top Boot Device, 04h = Both
Top and Bottom
Program Suspend
0 = Not supported, 1 = Supported
Bank Organization
00 = Data at 4Ah is zero, X = Number of Banks
Bank 1 Region Information
X = Number of Sectors in Bank 1
Bank 2 Region Information
X = Number of Sectors in Bank 2
Bank 3 Region Information
X = Number of Sectors in Bank 3
Bank 4 Region Information
X = Number of Sectors in Bank 4
Am29PDL127H
33
A D V A N C E
I N F O R M A T I O N
COMMAND DEFINITIONS
Writing specific address and data commands or sequences into the command register initiates device operations. Table 13 defines the valid register command
sequences. Writing incorrect address and data values or writing them in the improper sequence may
place the device in an unknown state. A reset command is then required to return the device to reading
array data.
All addresses are latched on the falling edge of WE#
or CE#, whichever happens later. All data is latched on
the rising edge of WE# or CE#, whichever happens
first. Refer to the AC Characteristic section for timing
diagrams.
Reading Array Data
The device is automatically set to reading array data
after device power-up. No commands are required to
retrieve data. Each bank is ready to read array data
after completing an Embedded Program or Embedded
Erase algorithm.
After the device accepts an Erase Suspend command,
the corresponding bank enters the eras e-sus pend-read mode, after which the system can read
data from any non-erase-suspended sector within the
same bank. The system can read array data using the
standard read timing, except that if it reads at an address within erase-suspended sectors, the device outputs status data. After completing a programming
operation in the Erase Suspend mode, the system
may once again read array data with the same exception. See the Erase Suspend/Erase Resume Commands section for more information.
The system must issue the reset command to return a
bank to the read (or erase-suspend-read) mode if DQ5
goes high during an active program or erase operation, or if the bank is in the autoselect mode. See the
next section, Reset Command, for more information.
See also Requirements for Reading Array Data in the
Device Bus Operations section for more information.
The AC Characteristic table provides the read parameters, and Figure 12 shows the timing diagram.
The reset command may be written between the
sequence cycles in a program command sequence
before programming begins. This resets the bank to
which the system was writing to the read mode. If the
program command sequence is written to a bank that
is in the Erase Suspend mode, writing the reset
co m m an d re tur n s th at b a nk t o t he e ra se- suspend-read mode. Once programming begins, however, the device ignores reset commands until the
operation is complete.
The reset command may be written between the sequence cycles in an autoselect command sequence.
Once in the autoselect mode, the reset command
must be written to return to the read mode. If a bank
entered the autoselect mode while in the Erase Suspend mode, writing the reset command returns that
bank to the erase-suspend-read mode.
If DQ5 goes high during a program or erase operation,
writing the reset command returns the banks to the
read mode (or erase-suspend-read mode if that bank
was in Erase Suspend).
Autoselect Command Sequence
The autoselect command sequence allows the host
system to access the manufacturer and device codes,
and determine whether or not a sector is protected.
The autoselect command sequence may be written to
an address within a bank that is either in the read or
erase-suspend-read mode. The autoselect command
may not be written while the device is actively programming or erasing in the other bank.
The autoselect command sequence is initiated by first
writing two unlock cycles. This is followed by a third
write cycle that contains the bank address and the autoselect command. The bank then enters the autoselect mode. The system may read any number of
autoselect codes without reinitiating the command sequence.
Reset Command
Table 13 shows the address and data requirements.
To determine sector protection information, the system
must write to the appropriate bank address (BA) and
sector address (SA). Table 4 shows the address range
and bank number associated with each sector.
Writing the reset command resets the banks to the
read or erase-suspend-read mode. Address bits are
don’t cares for this command.
The system must write the reset command to return to
the read mode (or erase-suspend-read mode if the
bank was previously in Erase Suspend).
The reset command may be written between the sequence cycles in an erase command sequence before
erasing begins. This resets the bank to which the system was writing to the read mode. Once erasure begins, however, the device ignores reset commands
until the operation is complete.
34
Enter SecSi™ Sector/Exit SecSi Sector
Command Sequence
The SecSi Sector region provides a secured data area
containing a random, eight word electronic serial number (ESN). The system can access the SecSi Sector
region by issuing the three-cycle Enter SecSi Sector
Am29PDL127H
June 30, 2003
A D V A N C E
I N F O R M A T I O N
command sequence. The device continues to access
the SecSi Sector region until the system issues the
four-cycle Exit SecSi Sector command sequence. The
Exit SecSi Sector command sequence returns the device to normal operation. The SecSi Sector is not accessible when the device is executing an Embedded
Program or embedded Erase algorithm. Table 13
shows the address and data requirements for both
command sequences. See also “SecSi™ (Secured Silicon) Sector Flash Memory Region” for further information. Note that the ACC function and unlock bypass
modes are not available when the SecSi Sector is enabled.
Word Program Command Sequence
Programming is a four-bus-cycle operation. The program command sequence is initiated by writing two
unlock write cycles, followed by the program set-up
command. The program address and data are written
next, which in turn initiate the Embedded Program algorithm. The system is not required to provide further
controls or timings. The device automatically provides
internally generated program pulses and verifies the
programmed cell margin. Table 13 shows the address
and data requirements for the program command sequence. Note that the SecSi Sector, autoselect, and
CFI functions are unavailable when a [program/erase]
operation is in progress.
When the Embedded Program algorithm is complete,
that bank then returns to the read mode and addresses are no longer latched. The system can determine the status of the program operation by using
DQ7, DQ6, or RY/BY#. Refer to the Write Operation
Status section for information on these status bits.
DQ6 status bits to indicate the operation was successful. However, a succeeding read will show that the
data is still “0.” Only erase operations can convert a
“0” to a “1.”
Unlock Bypass Command Sequence
The unlock bypass feature allows the system to program data to a bank faster than using the standard
program command sequence. The unlock bypass
command sequence is initiated by first writing two unlock cycles. This is followed by a third write cycle containing the unlock bypass command, 20h. That bank
then enters the unlock bypass mode. A two-cycle unlock bypass program command sequence is all that is
required to program in this mode. The first cycle in this
sequence contains the unlock bypass program command, A0h; the second cycle contains the program
address and data. Additional data is programmed in
the same manner. This mode dispenses with the initial
two unlock cycles required in the standard program
command sequence, resulting in faster total programming time. Table 13 shows the requirements for the
command sequence.
During the unlock bypass mode, only the Unlock Bypass Program and Unlock Bypass Reset commands
are valid. To exit the unlock bypass mode, the system
must issue the two-cycle unlock bypass reset command sequence. (See Table 14)
Any commands written to the device during the Embedded Program Algorithm are ignored. Note that a
hardware reset immediately terminates the program
operation. The program command sequence should
be reinitiated once that bank has returned to the read
mode, to ensure data integrity.
The device offers accelerated program operations
through the WP#/ACC pin. When the system asserts
VHH on the WP#/ACC pin, the device automatically enters the Unlock Bypass mode. The system may then
write the two-cycle Unlock Bypass program command
sequence. The device uses the higher voltage on the
WP#/ACC pin to accelerate the operation. Note that
the WP#/ACC pin must not be at VHH any operation
other than accelerated programming, or device damage may result. In addition, the WP#/ACC pin must not
be left floating or unconnected; inconsistent behavior
of the device may result.
Programming is allowed in any sequence and across
sector boundaries. A bit cannot be programmed
from “0” back to a “1.” Attempting to do so may
cause that bank to set DQ5 = 1, or cause the DQ7 and
Figure 4 illustrates the algorithm for the program operation. Refer to the Erase and Program Operations
table in the AC Characteristics section for parameters,
and Figure 15 for timing diagrams.
June 30, 2003
Am29PDL127H
35
A D V A N C E
I N F O R M A T I O N
operation is in progress. However, note that a hardware reset immediately terminates the erase operation. If that occurs, the chip erase command sequence
should be reinitiated once that bank has returned to
reading array data, to ensure data integrity.
START
Figure 5 illustrates the algorithm for the erase operation. Refer to the Erase and Program Operations tables in the AC Characteristics section for parameters,
and Figure 17 section for timing diagrams.
Write Program
Command Sequence
Sector Erase Command Sequence
Data Poll
from System
Embedded
Program
algorithm
in progress
Verify Data?
No
Yes
Increment Address
No
The device does not require the system to preprogram
prior to erase. The Embedded Erase algorithm automatically programs and verifies the entire memory for
an all zero data pattern prior to electrical erase. The
system is not required to provide any controls or timings during these operations.
Last Address?
Yes
Programming
Completed
Note: See Table 13 for program command sequence.
Figure 4.
Program Operation
Chip Erase Command Sequence
Chip erase is a six bus cycle operation. The chip erase
command sequence is initiated by writing two unlock
cycles, followed by a set-up command. Two additional
unlock write cycles are then followed by the chip erase
command, which in turn invokes the Embedded Erase
algorithm. The device does not require the system to
preprogram prior to erase. The Embedded Erase algorithm automatically preprograms and verifies the entire
memory for an all zero data pattern prior to electrical
erase. The system is not required to provide any controls or timings during these operations. Table 13
shows the address and data requirements for the chip
erase command sequence.
When the Embedded Erase algorithm is complete,
that bank returns to the read mode and addresses are
no longer latched. The system can determine the status of the erase operation by using DQ7, DQ6, DQ2,
or RY/BY#. Refer to the Write Operation Status section for information on these status bits.
Any commands written during the chip erase operation
are ignored. Note that SecSi Sector, autoselect, and
CFI functions are unavailable when a [program/erase]
36
Sector erase is a six bus cycle operation. The sector
erase command sequence is initiated by writing two
unlock cycles, followed by a set-up command. Two additional unlock cycles are written, and are then followed by the address of the sector to be erased, and
the sector erase command.Table 13 shows the address and data requirements for the sector erase command sequence.
After the command sequence is written, a sector erase
time-out of 50 µs occurs. During the time-out period,
additional sector addresses and sector erase commands may be written. Loading the sector erase buffer
may be done in any sequence, and the number of sectors may be from one sector to all sectors. The time
between these additional cycles must be less than 50
µs, otherwise erasure may begin. Any sector erase
address and command following the exceeded
time-out may or may not be accepted. It is recommended that processor interrupts be disabled during
this time to ensure all commands are accepted. The
interrupts can be re-enabled after the last Sector
Erase command is written. Any command other than
S e ct o r E ra se o r E ra s e S u s p en d d u r i n g th e
time-out period resets that bank to the read mode.
The system must rewrite the command sequence and
any additional addresses and commands. Note that
SecSi Sector, autoselect, and CFI functions are unavailable when a [program/erase] operation is in
progress.
The system can monitor DQ3 to determine if the sector erase timer has timed out (See the section on DQ3:
Sector Erase Timer). The time-out begins from the rising edge of the final WE# pulse in the command
sequence.
When the Embedded Erase algorithm is complete, the
bank returns to reading array data and addresses are
no longer latched. Note that while the Embedded
Erase operation is in progress, the system can read
Am29PDL127H
June 30, 2003
A D V A N C E
I N F O R M A T I O N
data from the non-erasing bank. The system can determine the status of the erase operation by reading
DQ7, DQ6, DQ2, or RY/BY# in the erasing bank.
Refer to the Write Operation Status section for information on these status bits.
Once the sector erase operation has begun, only the
Erase Suspend command is valid. All other commands are ignored. However, note that a hardware
reset immediately terminates the erase operation. If
that occurs, the sector erase command sequence
should be reinitiated once that bank has returned to
reading array data, to ensure data integrity.
Figure 5 illustrates the algorithm for the erase operation. Refer to the Erase and Program Operations tables in the AC Characteristics section for parameters,
and Figure 17 section for timing diagrams.
START
Write Erase
Command Sequence
(Notes 1, 2)
Data Poll to Erasing
Bank from System
No
When the Erase Suspend command is written during
the sector erase operation, the device requires a maximum of 20 µs to suspend the erase operation. However, when the Erase Suspend command is written
during the sector erase time-out, the device immediately terminates the time-out period and suspends the
erase operation. Addresses are “don’t-cares” when
writing the Erase suspend command.
After the erase operation has been suspended, the
bank enters the erase-suspend-read mode. The system can read data from or program data to any sector
not selected for erasure. (The device “erase suspends” all sectors selected for erasure.) Reading at
any address within erase-suspended sectors produces status information on DQ7–DQ0. The system
can use DQ7, or DQ6 and DQ2 together, to determine
if a sector is actively erasing or is erase-suspended.
Refer to the Write Operation Status section for information on these status bits.
After an erase-suspended program operation is complete, the bank returns to the erase-suspend-read
mode. The system can determine the status of the
program operation using the DQ7 or DQ6 status bits,
just as in the standard Word Program operation.
Refer to the Write Operation Status section for more
information.
Embedded
Erase
algorithm
in progress
In the erase-suspend-read mode, the system can also
issue the autoselect command sequence. The device
allows reading autoselect codes even at addresses
within erasing sectors, since the codes are not stored
in the memory array. When the device exits the autoselect mode, the device reverts to the Erase Suspend mode, and is ready for another valid operation.
Refer to the Autoselect Mode and Autoselect Command Sequence sections for details.
Data = FFh?
Yes
Erasure Completed
Notes:
1. See Table 13 for erase command sequence.
2. See the section on DQ3 for information on the sector
erase timer.
Figure 5.
period during the sector erase command sequence.
The Erase Suspend command is ignored if written during the chip erase operation or Embedded Program
algorithm.
Erase Operation
To resume the sector erase operation, the system
must write the Erase Resume command (address bits
are don’t care). The bank address of the erase-suspended bank is required when writing this command.
Further writes of the Resume command are ignored.
Another Erase Suspend command can be written after
the chip has resumed erasing.
Erase Suspend/Erase Resume
Commands
Password Program Command
The Erase Suspend command, B0h, allows the system to interrupt a sector erase operation and then read
data from, or program data to, any sector not selected
for erasure. The bank address is required when writing
this command. This command is valid only during the
sector erase operation, including the 80 µs time-out
The Password Program Command permits programming the password that is used as part of the hardware protection scheme. The actual password is
64-bits long. Four Password Program commands are
required to program the password. The system must
enter the unlock cycle, password program command
(38h) and the program address/data for each portion
June 30, 2003
Am29PDL127H
37
A D V A N C E
I N F O R M A T I O N
of the password when programming. There are no
provisions for entering the 2-cycle unlock cycle, the
password program command, and all the password
data. There is no special addressing order required for
programming the password. Also, when the password
is undergoing programming, Simultaneous Operation
is disabled. Read operations to any memory location
will return the programming status. Once programming is complete, the user must issue a Read/Reset
command to return the device to normal operation.
Once the Password is written and verified, the Password Mode Locking Bit must be set in order to prevent
verification. The Password Program Command is only
capable of programming “0”s. Programming a “1” after
a cell is programmed as a “0” results in a time-out by
the Embedded Program Algorithm™ with the cell remaining as a “0”. The password is all ones when
shipped from the factory. All 64-bit password combinations are valid as a password.
Persistent Sector Protection Mode
Locking Bit Program Command
Password Verify Command
The SecSi Sector Protection Bit Program Command
programs the SecSi Sector Protection Bit, which prevents the SecSi sector memory from being cleared. If
the SecSi Sector Protection Bit is verified as programmed without margin, the SecSi Sector Protection
Bit Program Command should be reissued to improve
program margin. Exiting the VCC-level SecSi Sector
Protection Bit Program Command is accomplished by
writing the Read/Reset command.
The Password Verify Command is used to verify the
Password. The Password is verifiable only when the
Password Mode Locking Bit is not programmed. If the
Password Mode Locking Bit is programmed and the
user attempts to verify the Password, the device will
always drive all F’s onto the DQ data bus.
The Password Verify command is permitted if the
SecSi sector is enabled. Also, the device will not operate in Simultaneous Operation when the Password
Verify command is executed. Only the password is returned regardless of the bank address. The lower two
address bits (A1-A0) are valid during the Password
Verify. Writing the Read/Reset command returns the
device back to normal operation.
Password Protection Mode Locking Bit
Program Command
The Password Protection Mode Locking Bit Program
Command programs the Password Protection Mode
Locking Bit, which prevents further verifies or updates
to the Password. Once programmed, the Password
Protection Mode Locking Bit cannot be erased! If the
Password Protection Mode Locking Bit is verified as
program without margin, the Password Protection
Mode Locking Bit Program command can be executed
to improve the program margin. Once the Password
Protection Mode Locking Bit is programmed, the Persistent Sector Protection Locking Bit program circuitry
is disabled, thereby forcing the device to remain in the
Password Protection mode. Exiting the Mode Locking
Bit Program command is accomplished by writing the
Read/Reset command.
38
The Persistent Sector Protection Mode Locking Bit
Program Command programs the Persistent Sector
Protection Mode Locking Bit, which prevents the Password Mode Locking Bit from ever being programmed.
If the Persistent Sector Protection Mode Locking Bit is
verified as programmed without margin, the Persistent
Sector Protection Mode Locking Bit Program Command should be reissued to improve program margin.
By disabling the program circuitry of the Password
Mode Locking Bit, the device is forced to remain in the
Persistent Sector Protection mode of operation, once
this bit is set. Exiting the Persistent Protection Mode
Locking Bit Program command is accomplished by
writing the Read/Reset command.
SecSi Sector Protection Bit Program
Command
PPB Lock Bit Set Command
The PPB Lock Bit Set command is used to set the
PPB Lock bit if it is cleared either at reset or if the
Password Unlock command was successfully executed. There is no PPB Lock Bit Clear command.
Once the PPB Lock Bit is set, it cannot be cleared unless the device is taken through a power-on clear or
the Password Unlock command is executed. Upon
setting the PPB Lock Bit, the PPBs are latched into the
DYBs. If the Password Mode Locking Bit is set, the
PPB Lock Bit status is reflected as set, even after a
power-on reset cycle. Exiting the PPB Lock Bit Set
command is accomplished by writing the Read/Reset
command (only in the Persistent Protection Mode).
DYB Write Command
The DYB Write command is used to set or clear a DYB
for a given sector. The high order address bits
(A22–A12) are issued at the same time as the code
01h or 00h on DQ7-DQ0. All other DQ data bus pins
are ignored during the data write cycle. The DYBs are
modifiable at any time, regardless of the state of the
PPB or PPB Lock Bit. The DYBs are cleared at
power-up or hardware reset.Exiting the DYB Write
command is accomplished by writing the Read/Reset
command.
Am29PDL127H
June 30, 2003
A D V A N C E
I N F O R M A T I O N
Password Unlock Command
The Password Unlock command is used to clear the
PPB Lock Bit so that the PPBs can be unlocked for
modification, thereby allowing the PPBs to become accessible for modification. The exact password must be
entered in order for the unlocking function to occur.
This command cannot be issued any faster than 2 µs
at a time to prevent a hacker from running through all
64-bit combinations in an attempt to correctly match a
password. If the command is issued before the 2 µ s
execution window for each portion of the unlock, the
command will be ignored.
Once the Password Unlock command is entered, the
RY/BY# indicates that the device is busy. Approximately 1 µs is required for each portion of the unlock.
Once the first portion of the password unlock completes (RY/BY# is not low or DQ6 does not toggle
when read), the next part of the password is written.
The system must thus monitor RY/BY# or the status
bits to confirm when to write the next portion of the
password. Seven cycles are required to successfully
clear the PPB Lock Bit.
determine whether the PPB has been erased with
margin. If the PPBs has been erased without margin,
the erase command should be reissued to improve the
program margin.
It is the responsibility of the user to preprogram all
PPBs prior to issuing the All PPB Erase command. If
the user attempts to erase a cleared PPB, over-erasure may occur making it difficult to program the PPB
at a later time. Also note that the total number of PPB
program/erase cycles is limited to 100 cycles. Cycling
the PPBs beyond 100 cycles is not guaranteed.
DYB Write Command
The DYB Write command is used for setting the DYB,
which is a volatile bit that is cleared at reset. There is
one DYB per sector. If the PPB is set, the sector is
protected regardless of the value of the DYB. If the
PPB is cleared, setting the DYB to a 1 protects the
sector from programs or erases. Since this is a volatile
bit, removing power or resetting the device will clear
the DYBs. The bank address is latched when the command is written.
PPB Program Command
PPB Lock Bit Set Command
The PPB Program command is used to program, or
set, a given PPB. Each PPB is individually programmed (but is bulk erased with the other PPBs).
The specific sector address (A22–A12) are written at
the same time as the program command 60h with A6
= 0. If the PPB Lock Bit is set and the corresponding
PPB is set for the sector, the PPB Program command
will not execute and the command will time-out without
programming the PPB.
The PPB Lock Bit set command is used for setting the
DYB, which is a volatile bit that is cleared at reset.
There is one DYB per sector. If the PPB is set, the
sector is protected regardless of the value of the DYB.
If the PPB is cleared, setting the DYB to a 1 protects
the sector from programs or erases. Since this is a volatile bit, removing power or resetting the device will
clear the DYBs. The bank address is latched when the
command is written.
After programming a PPB, two additional cycles are
needed to determine whether the PPB has been programmed with margin. If the PPB has been programmed without margin, the program command
should be reissued to improve the program margin.
Also note that the total number of PPB program/erase
cycles is limited to 100 cycles. Cycling the PPBs beyond 100 cycles is not guaranteed.
PPB Status Command
The PPB Program command does not follow the Embedded Program algorithm.
PPB Lock Bit Status Command
The programming of the PPB Lock Bit for a given sector can be verified by writing a PPB Lock Bit status
verify command to the device.
Sector Protection Status Command
All PPB Erase Command
The All PPB Erase command is used to erase all
PPBs in bulk. There is no means for individually erasing a specific PPB. Unlike the PPB program, no specific sector address is required. However, when the
PPB erase command is written all Sector PPBs are
erased in parallel. If the PPB Lock Bit is set the ALL
PPB Erase command will not execute and the command will time-out without erasing the PPBs. After
erasing the PPBs, two additional cycles are needed to
June 30, 2003
The programming of the PPB for a given sector can be
verified by writing a PPB status verify command to the
device.
The programming of either the PPB or DYB for a given
sector or sector group can be verified by writing a Sector Protection Status command to the device.
Note that there is no single command to independently
verify the programming of a DYB for a given sector
group.
Am29PDL127H
39
A D V A N C E
I N F O R M A T I O N
Command Definitions Tables
Command (Notes)
Cycles
Table 13.
Memory Array Command Definitions
Bus Cycles (Notes 1–4)
Addr Data Addr Data Addr Data
Addr
Data
Read (5)
1
RA
Reset (6)
1
XXX
F0
Manufacturer ID
4
555
AA
2AA
55
555
90
(BA)X00
01
Device ID (10)
6
555
AA
2AA
55
555
90
(BA)X01
7E
Autoselect
(Note 7)
Addr
Data
Addr
Data
(BA)X0E
20
(BA)X0F
00
RD
SecSi Sector Factory
Protect (8)
4
555
AA
2AA
55
555
90
X03
(see
note 8)
Sector Group Protect Verify
(9)
4
555
AAA
2AA
55
555
90
(SA)X02
XX00/
XX01
Program
4
555
AA
2AA
55
555
A0
PA
PD
Chip Erase
6
555
AA
2AA
55
555
80
555
AA
2AA
55
555
10
Sector Erase
6
555
AA
2AA
55
555
80
555
AA
2AA
55
SA
30
PD
555
20
Program/Erase Suspend (11)
1
BA
B0
Program/Erase Resume (12)
1
BA
30
CFI Query (13)
1
55
98
Accelerated Program (15)
2
XX
A0
PA
Unlock Bypass Entry (15)
3
555
AA
2AA
55
Unlock Bypass Program (15)
2
XX
A0
PA
PD
Unlock Bypass Erase (15)
2
XX
80
XX
10
Unlock Bypass CFI (13, 15)
1
XX
98
Unlock Bypass Reset (15)
2
XXX
90
XXX
00
Legend:
BA = Address of bank switching to autoselect mode, bypass mode, or
erase operation. Determined by A22:A20, see Tables 4 and for more
detail.
PA = Program Address (A22:A0). Addresses latch on falling edge of
WE# or CE# pulse, whichever happens later.
PD = Program Data (DQ15:DQ0) written to location PA. Data latches
on rising edge of WE# or CE# pulse, whichever happens first.
RA = Read Address (A22:A0).
RD = Read Data (DQ15:DQ0) from location RA.
SA = Sector Address (A22:A12) for verifying (in autoselect mode) or
erasing.
WD = Write Data. See “Configuration Register” definition for specific
write data. Data latched on rising edge of WE#.
X = Don’t care
Notes:
1. See Table 1 for description of bus operations.
8.
The data is C0h for factory and customer locked and 80h for
factory locked.
The data is 00h for an unprotected sector group and 01h for a
protected sector group.
2.
All values are in hexadecimal.
3.
Shaded cells in table denote read cycles. All other cycles are
write operations.
9.
4.
During unlock and command cycles, when lower address bits are
555 or 2AAh as shown in table, address bits higher than A11
(except where BA is required) and data bits higher than DQ7 are
don’t cares.
10. Device ID must be read across cycles 4, 5, and 6.
5.
No unlock or command cycles required when bank is reading
array data.
6.
The Reset command is required to return to reading array (or to
erase-suspend-read mode if previously in Erase Suspend) when
bank is in autoselect mode, or if DQ5 goes high (while bank is
providing status information).
7.
40
Fourth cycle of autoselect command sequence is a read cycle.
System must provide bank address to obtain manufacturer ID or
device ID information. See Autoselect Command Sequence
section for more information.
11. System may read and program in non-erasing sectors, or enter
autoselect mode, when in Program/Erase Suspend mode.
Program/Erase Suspend command is valid only during a sector
erase operation, and requires bank address.
12. Program/Erase Resume command is valid only during Erase
Suspend mode, and requires bank address.
13. Command is valid when device is ready to read array data or
when device is in autoselect mode.
14. WP#/ACC must be at VID during the entire operation of command.
15. Unlock Bypass Entry command is required prior to any Unlock
Bypass operation. Unlock Bypass Reset command is required to
return to the reading array.
Am29PDL127H
June 30, 2003
A D V A N C E
Table 14.
I N F O R M A T I O N
Sector Protection Command Definitions
Cycles
Bus Cycles (Notes 1-4)
Command
(Notes)
Reset
1 XXX
Addr Data Addr Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
OW
48
OW
RD(0)
Addr
Data
PWA[3]
PWD[3]
F0
SecSi Sector Entry 3
555
AA
2AA
55
555
88
SecSi Sector Exit
4
555
AA
2AA
55
555
90
XX
00
SecSi Protection
Bit Program (5, 6)
6
555
AA
2AA
55
555
60
OW
68
SecSi Protection
Bit Status
4
555
AA
2AA
55
555
60
OW
RD(0)
Password Program
4
(5, 7, 8)
555
AA
2AA
55
555
38
XX[0-3]
PD[0-3]
Password Verify
(6, 8, 9)
4
555
AA
2AA
55
555
C8
PWA[0-3]
PWD[0-3]
Password Unlock
(7, 10, 11)
7
555
AA
2AA
55
555
28
PWA[0]
PWD[0]
PWA[1]
PWD[1]
PWA[2]
PWD[2]
PPB Program (5,
6, 12)
6
555
AA
2AA
55
555
60
(SA)WP
68
(SA)WP
48
(SA)WP
RD(0)
PPB Status
4
555
AA
2AA
55
555
90
(SA)WP
RD(0)
All PPB Erase (5,
6, 13, 14)
6
555
AA
2AA
55
555
60
WP
60
(SA)
40
(SA)WP
RD(0)
PL
48
PL
RD(0)
SL
48
SL
RD(0)
PPB Lock Bit Set
3
555
AA
2AA
55
555
78
PPB Lock Bit
Status (15)
4
555
AA
2AA
55
555
58
SA
RD(1)
DYB Write (7)
4
555
AA
2AA
55
555
48
SA
X1
DYB Erase (7)
4
555
AA
2AA
55
555
48
SA
X0
DYB Status (6)
4
555
AA
2AA
55
555
58
SA
RD(0)
PPMLB Program
(5, 6, 12)
6
555
AA
2AA
55
555
60
PL
68
PPMLB Status (5)
4
555
AA
2AA
55
555
60
PL
RD(0)
SPMLB Program
(5, 6, 12)
6
555
AA
2AA
55
555
60
SL
68
SPMLB Status (5)
4
555
AA
2AA
55
555
60
SL
RD(0)
Legend:
DYB = Dynamic Protection Bit
OW = Address (A7:A0) is (00011010)
PD[3:0] = Password Data (1 of 4 portions)
PPB = Persistent Protection Bit
PWA = Password Address. A1:A0 selects portion of password.
PWD = Password Data being verified.
PL = Password Protection Mode Lock Address (A7:A0) is (00001010)
RD(0) = Read Data DQ0 for protection indicator bit.
RD(1) = Read Data DQ1 for PPB Lock status.
SA = Sector Address where security command applies. Address bits
A22:A12 uniquely select any sector.
SL = Persistent Protection Mode Lock Address (A7:A0) is (00010010)
WP = PPB Address (A7:A0) is (00000010) (Note16)
X = Don’t care
PPMLB = Password Protection Mode Locking Bit
SPMLB = Persistent Protection Mode Locking Bit
1.
See Table 1 for description of bus operations.
9.
2.
All values are in hexadecimal.
3.
Shaded cells in table denote read cycles. All other cycles are
write operations.
10. The password is written over four consecutive cycles, at
addresses 0-3.
4.
During unlock and command cycles, when lower address bits are
555 or 2AAh as shown in table, address bits higher than A11
(except where BA is required) and data bits higher than DQ7 are
don’t cares.
5.
The reset command returns device to reading array.
6.
Cycle 4 programs the addressed locking bit. Cycles 5 and 6
validate bit has been fully programmed when DQ0 = 1. If DQ0 = 0
in cycle 6, program command must be issued and verified again.
7.
Data is latched on the rising edge of WE#.
8.
Entire command sequence must be entered for each portion of
password.
June 30, 2003
Command sequence returns FFh if PPMLB is set.
11. A 2 µs timeout is required between any two portions of password.
12. A 100 µs timeout is required between cycles 4 and 5.
13. A 1.2 ms timeout is required between cycles 4 and 5.
14. Cycle 4 erases all PPBs. Cycles 5 and 6 validate bits have been
fully erased when DQ0 = 0. If DQ0 = 1 in cycle 6, erase command
must be issued and verified again. Before issuing erase
command, all PPBs should be programmed to prevent PPB
overerasure.
15. DQ1 = 1 if PPB locked, 0 if unlocked.
16. For PDL128G and PDL640G, the WP address is 0111010. The
EP address (PPB Erase Address) is 1111010.
Am29PDL127H
41
A D V A N C E
I N F O R M A T I O N
WRITE OPERATION STATUS
The device provides several bits to determine the status of
a program or erase operation: DQ2, DQ3, DQ5, DQ6, and
DQ7. Table 15 and the following subsections describe the
function of these bits. DQ7 and DQ6 each offer a method
for determining whether a program or erase operation is
complete or in progress. The device also provides a hardware-based output signal, RY/BY#, to determine whether
an Embedded Program or Erase operation is in progress or
has been completed.
pleted the program or erase operation and DQ7 has
valid data, the data outputs on DQ15–DQ0 may be still
invalid. Valid data on DQ15–DQ0 will appear on successive read cycles.
Table 15 shows the outputs for Data# Polling on DQ7.
Figure 6 shows the Data# Polling algorithm. Figure 19
in the AC Characteristic section shows the Data# Polling timing diagram.
DQ7: Data# Polling
The Data# Polling bit, DQ7, indicates to the host system
whether an Embedded Program or Erase algorithm is in
progress or completed, or whether a bank is in Erase Suspend. Data# Polling is valid after the rising edge of the final
WE# pulse in the command sequence.
During the Embedded Program algorithm, the device outputs on DQ7 the complement of the datum programmed to
DQ7. This DQ7 status also applies to programming during
Erase Suspend. When the Embedded Program algorithm is
complete, the device outputs the datum programmed to
DQ7. The system must provide the program address to
read valid status information on DQ7. If a program address
falls within a protected sector, Data# Polling on DQ7 is active for approximately 1 µs, then that bank returns to the
read mode.
START
Read DQ7–DQ0
Addr = VA
DQ7 = Data?
No
No
During the Embedded Erase algorithm, Data# Polling
produces a “0” on DQ7. When the Embedded Erase
algorithm is complete, or if the bank enters the Erase
Suspend mode, Data# Polling produces a “1” on DQ7.
The system must provide an address within any of the
sectors selected for erasure to read valid status information on DQ7.
42
DQ5 = 1?
Yes
Read DQ7–DQ0
Addr = VA
After an erase command sequence is written, if all
sectors selected for erasing are protected, Data# Polling on DQ7 is active for approximately 400 µs, then
the bank returns to the read mode. If not all selected
sectors are protected, the Embedded Erase algorithm
erases the unprotected sectors, and ignores the selected sectors that are protected. However, if the system reads DQ7 at an address within a protected
sector, the status may not be valid.
When the system detects DQ7 has changed from the
complement to true data, it can read valid data at
DQ15–DQ0 on the following read cycles. Just prior to
the completion of an Embedded Program or Erase operation, DQ7 may change asynchronously with
DQ15–DQ0 while Output Enable (OE#) is asserted
low. That is, the device may change from providing
status information to valid data on DQ7. Depending on
when the system samples the DQ7 output, it may read
the status or valid data. Even if the device has com-
Yes
DQ7 = Data?
Yes
No
FAIL
PASS
Notes:
1. VA = Valid address for programming. During a sector
erase operation, a valid address is any sector address
within the sector being erased. During chip erase, a
valid address is any non-protected sector address.
2. DQ7 should be rechecked even if DQ5 = “1” because
DQ7 may change simultaneously with DQ5.
Am29PDL127H
Figure 6.
Data# Polling Algorithm
June 30, 2003
A D V A N C E
I N F O R M A T I O N
RY/BY#: Ready/Busy#
The RY/BY# is a dedicated, open-drain output pin
which indicates whether an Embedded Algorithm is in
progress or complete. The RY/BY# status is valid after
the rising edge of the final WE# pulse in the command
sequence. Since RY/BY# is an open-drain output, several RY/BY# pins can be tied together in parallel with a
pull-up resistor to VCC.
If the output is low (Busy), the device is actively erasing or programming. (This includes programming in
the Erase Suspend mode.) If the output is high
(Ready), the device is in the read mode, the standby
mode, or one of the banks is in the erase-suspend-read mode.
DQ6 also toggles during the erase-suspend-program
mode, and stops toggling once the Embedded Program algorithm is complete.
Table 15 shows the outputs for Toggle Bit I on DQ6.
Figure 7 shows the toggle bit algorithm. Figure 20 in
the “AC Characteristics” section shows the toggle bit
timing diagrams. Figure 21 shows the differences between DQ2 and DQ6 in graphical form. See also the
subsection on DQ2: Toggle Bit II.
START
Read Byte
(DQ7–DQ0)
Address =VA
Table 15 shows the outputs for RY/BY#.
DQ6: Toggle Bit I
Toggle Bit I on DQ6 indicates whether an Embedded
Program or Erase algorithm is in progress or complete, or whether the device has entered the Erase
Suspend mode. Toggle Bit I may be read at any address, and is valid after the rising edge of the final
WE# pulse in the command sequence (prior to the
program or erase operation), and during the sector
erase time-out.
During an Embedded Program or Erase algorithm operation, successive read cycles to any address cause
DQ6 to toggle. The system may use either OE# or
CE# to control the read cycles. When the operation is
complete, DQ6 stops toggling.
Read Byte
(DQ7–DQ0)
Address =VA
Toggle Bit
= Toggle?
Yes
No
After an erase command sequence is written, if all
sectors selected for erasing are protected, DQ6 toggles for approximately 400 µs, then returns to reading
array data. If not all selected sectors are protected, the
Embedded Erase algorithm erases the unprotected
sectors, and ignores the selected sectors that are protected.
DQ5 = 1?
Yes
Read Byte Twice
(DQ7–DQ0)
Address = VA
The system can use DQ6 and DQ2 together to determine whether a sector is actively erasing or is
erase-suspended. When the device is actively erasing
(that is, the Embedded Erase algorithm is in progress),
DQ6 toggles. When the device enters the Erase Suspend mode, DQ6 stops toggling. However, the system
must also use DQ2 to determine which sectors are
erasing or erase-suspended. Alternatively, the system
can use DQ7 (see the subsection on DQ7: Data# Polling).
If a program address falls within a protected sector,
DQ6 toggles for approximately 1 µs after the program
command sequence is written, then returns to reading
array data.
Toggle Bit
= Toggle?
No
Yes
Program/Erase
Operation Not
Complete, Write
Reset Command
Program/Erase
Operation Complete
Note: The system should recheck the toggle bit even if DQ5
= “1” because the toggle bit may stop toggling as DQ5
changes to “1.” See the subsections on DQ6 and DQ2 for
more information.
Figure 7.
June 30, 2003
No
Am29PDL127H
Toggle Bit Algorithm
43
A D V A N C E
I N F O R M A T I O N
DQ2: Toggle Bit II
The “Toggle Bit II” on DQ2, when used with DQ6, indicates whether a particular sector is actively erasing
(that is, the Embedded Erase algorithm is in progress),
or whether that sector is erase-suspended. Toggle Bit
II is valid after the rising edge of the final WE# pulse in
the command sequence.
DQ2 toggles when the system reads at addresses
within those sectors that have been selected for erasure. (The system may use either OE# or CE# to control the read cycles.) But DQ2 cannot distinguish
whether the sector is actively erasing or is erase-suspended. DQ6, by comparison, indicates whether the
device is actively erasing, or is in Erase Suspend, but
cannot distinguish which sectors are selected for erasure. Thus, both status bits are required for sector and
mode information. Refer to Table 15 to compare outputs for DQ2 and DQ6.
Figure 7 shows the toggle bit algorithm in flowchart
form, and the section “DQ2: Toggle Bit II” explains the
algorithm. See also the DQ6: Toggle Bit I subsection.
Figure 20 shows the toggle bit timing diagram. Figure
21 shows the differences between DQ2 and DQ6 in
graphical form.
Reading Toggle Bits DQ6/DQ2
Refer to Figure 7 for the following discussion. Whenever the system initially begins reading toggle bit status, it must read DQ7–DQ0 at least twice in a row to
determine whether a toggle bit is toggling. Typically,
the system would note and store the value of the toggle bit after the first read. After the second read, the
system would compare the new value of the toggle bit
with the first. If the toggle bit is not toggling, the device
has completed the program or erase operation. The
system can read array data on DQ7–DQ0 on the following read cycle.
However, if after the initial two read cycles, the system
determines that the toggle bit is still toggling, the system also should note whether the value of DQ5 is high
(see the section on DQ5). If it is, the system should
then determine again whether the toggle bit is toggling, since the toggle bit may have stopped toggling
just as DQ5 went high. If the toggle bit is no longer
toggling, the device has successfully completed the
program or erase operation. If it is still toggling, the device did not completed the operation successfully, and
the system must write the reset command to return to
reading array data.
The remaining scenario is that the system initially determines that the toggle bit is toggling and DQ5 has
not gone high. The system may continue to monitor
the toggle bit and DQ5 through successive read cycles, determining the status as described in the previous paragraph. Alternatively, it may choose to perform
other system tasks. In this case, the system must start
at the beginning of the algorithm when it returns to determine the status of the operation (top of Figure 7).
DQ5: Exceeded Timing Limits
DQ5 indicates whether the program or erase time has
exceeded a specified internal pulse count limit. Under these
conditions DQ5 produces a “1,” indicating that the program
or erase cycle was not successfully completed.
The device may output a “1” on DQ5 if the system tries
to program a “1” to a location that was previously programmed to “0.” Only an erase operation can
change a “0” back to a “1.” Under this condition, the
device halts the operation, and when the timing limit
has been exceeded, DQ5 produces a “1.”
Under both these conditions, the system must write
the reset command to return to the read mode (or to
the erase-suspend-read mode if a bank was previously in the erase-suspend-program mode).
DQ3: Sector Erase Timer
After writing a sector erase command sequence, the
system may read DQ3 to determine whether or not
erasure has begun. (The sector erase timer does not
apply to the chip erase command.) If additional
sectors are selected for erasure, the entire time-out
also applies after each additional sector erase command. When the time-out period is complete, DQ3
switches from a “0” to a “1.” See also the Sector Erase
Command Sequence section.
After the sector erase command is written, the system
should read the status of DQ7 (Data# Polling) or DQ6
(Toggle Bit I) to ensure that the device has accepted
the command sequence, and then read DQ3. If DQ3 is
“1,” the Embedded Erase algorithm has begun; all further commands (except Erase Suspend) are ignored
until the erase operation is complete. If DQ3 is “0,” the
device will accept additional sector erase commands.
To ensure the command has been accepted, the system software should check the status of DQ3 prior to
and following each subsequent sector erase command. If DQ3 is high on the second status check, the
last command might not have been accepted.
Table 15 shows the status of DQ3 relative to the other
status bits.
44
Am29PDL127H
June 30, 2003
A D V A N C E
Table 15.
Standard
Mode
Erase
Suspend
Mode
Status
Embedded Program Algorithm
Embedded Erase Algorithm
Erase
Erase-Suspend- Suspended Sector
Read
Non-Erase
Suspended Sector
Erase-Suspend-Program
I N F O R M A T I O N
Write Operation Status
DQ7
(Note 2)
DQ7#
0
DQ6
Toggle
Toggle
DQ5
(Note 1)
0
0
DQ3
N/A
1
DQ2
(Note 2)
No toggle
Toggle
RY/BY#
0
0
1
No toggle
0
N/A
Toggle
1
Data
Data
Data
Data
Data
1
DQ7#
Toggle
0
N/A
N/A
0
Notes:
1. DQ5 switches to ‘1’ when an Embedded Program or Embedded Erase operation has exceeded the maximum timing limits.
Refer to the section on DQ5 for more information.
2. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further
details.
3. When reading write operation status bits, the system must always provide the bank address where the Embedded Algorithm
is in progress. The device outputs array data if the system addresses a non-busy bank.
June 30, 2003
Am29PDL127H
45
A D V A N C E
I N F O R M A T I O N
ABSOLUTE MAXIMUM RATINGS
Storage Temperature
Plastic Packages . . . . . . . . . . . . . . . –65°C to +150°C
20 ns
Ambient Temperature
with Power Applied . . . . . . . . . . . . . –65°C to +125°C
+0.8 V
Voltage with Respect to Ground
–0.5 V
VCC (Note 1) . . . . . . . . . . . . . . . . .–0.5 V to +4.0 V
A9, OE#, and RESET#
(Note 2) . . . . . . . . . . . . . . . . . . . .–0.5 V to +13.0 V
20 ns
–2.0 V
20 ns
WP#/ACC (Note 2) . . . . . . . . . . .–0.5 V to +10.5 V
All other pins (Note 1) . . . . . . –0.5 V to VCC +0.5 V
Figure 8. Maximum Negative
Overshoot Waveform
Output Short Circuit Current (Note 3) . . . . . . 200 mA
Notes:
1. Minimum DC voltage on input or I/O pins is –0.5 V.
During voltage transitions, input or I/O pins may
overshoot V SS to –2.0 V for periods of up to 20 ns.
Maximum DC voltage on input or I/O pins is VCC +0.5 V.
See Figure 8. During voltage transitions, input or I/O pins
may overshoot to VCC +2.0 V for periods up to 20 ns. See
Figure 9.
2. Minimum DC input voltage on pins A9, OE#, RESET#,
and WP#/ACC is –0.5 V. During voltage transitions, A9,
OE#, WP#/ACC, and RESET# may overshoot VSS to
–2.0 V for periods of up to 20 ns. See Figure 8. Maximum
DC input voltage on pin A9, OE#, and RESET# is +12.5
V which may overshoot to +14.0 V for periods up to 20
ns. Maximum DC input voltage on WP#/ACC is +9.5 V
which may overshoot to +12.0 V for periods up to 20 ns.
20 ns
VCC
+2.0 V
VCC
+0.5 V
2.0 V
20 ns
20 ns
Figure 9. Maximum Positive
Overshoot Waveform
3. No more than one output may be shorted to ground at a
time. Duration of the short circuit should not be greater
than one second.
Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device. This
is a stress rating only; functional operation of the device at
these or any other conditions above those indicated in the
operational sections of this data sheet is not implied.
Exposure of the device to absolute maximum rating
conditions for extended periods may affect device reliability.
OPERATING RANGES
Supply Voltages
VCC . . . . . . . . . . . . . . . . . . . . . 2.7–3.6 V or 2.7–3.3 V
Industrial (I) Devices
Ambient Temperature (TA) . . . . . . . . . –40°C to +85°C
VIO (see Note) . . . . . . . . . . . 1.65–1.95 V or 2.7–3.6 V
Extended (E) Devices
Note: For all AC and DC specifications, VIO = VCC; contact
AMD for other VIO options.
Ambient Temperature (TA) . . . . . . . . –55°C to +125°C
Operating ranges define those limits between which the
functionality of the device is guaranteed.
46
Am29PDL127H
June 30, 2003
A D V A N C E
I N F O R M A T I O N
DC CHARACTERISTICS
CMOS Compatible
Parameter
Symbol
Parameter Description
Test Conditions
Min
Typ
Max
Unit
±1.0
µA
ILI
Input Load Current
VIN = VSS to VCC,
VCC = VCC max
ILIT
A9, OE#, RESET# Input Load Current
VCC = VCC max; VID= 12.5 V
35
µA
ILR
Reset Leakage Current
VCC = VCC max; VID= 12.5 V
35
µA
ILO
Output Leakage Current
VOUT = VSS to VCC, OE# = VIH
VCC = VCC max
±1.0
µA
ICC1
VCC Active Read Current (Notes 1, 2)
OE# = VIH, VCC = VCC max
(Note 1)
ICC2
VCC Active Write Current (Notes 2, 3)
ICC3
VCC Standby Current (Note 2)
ICC4
5 MHz
20
30
10 MHz
45
55
OE# = VIH, WE# = VIL
15
25
mA
CE#, CE2#, RESET#, WP/ACC#
= VIO ± 0.3 V
1
5
µA
VCC Reset Current (Note 2)
RESET# = VSS ± 0.3 V
1
5
µA
ICC5
Automatic Sleep Mode (Notes 2, 4)
VIH = VIO ± 0.3 V;
VIL = VSS ± 0.3 V
1
5
µA
ICC6
VCC Active Read-While-Program Current
(Notes 1, 2)
OE# = VIH
21
45
mA
ICC7
VCC Active Read-While-Erase Current
(Notes 1, 2)
OE# = VIH
21
45
mA
ICC8
VCC Active Program-While-EraseSuspended Current (Notes 2, 5)
OE# = VIH
17
25
mA
VIL
Input Low Voltage
VIH
Input High Voltage
VHH
mA
VIO = 1.65–1.95 V
–0.4
0.4
V
VIO = 2.7–3.6 V
–0.5
0.8
V
VIO–0.4
VIO+0.4
V
VIO = 2.7–3.6 V
2.0
VCC+0.3
V
Voltage for ACC Program Acceleration
VCC = 3.0 V ± 10%
8.5
9.5
V
VID
Voltage for Autoselect and Temporary
Sector Unprotect
VCC = 3.0 V ± 10%
11.5
12.5
V
VOL
Output Low Voltage
0.1
V
0.4
V
VOH
Output High Voltage
VLKO
Low VCC Lock-Out Voltage (Note 5)
VIO = 1.65–1.95 V
IOL = 100 µA, VCC = VCC min, VIO = 1.65–1.95 V
IOL = 4.0 mA, VCC = VCC min, VIO = 2.7–3.6 V
IOH = –100 µA, VCC = VCC min, VIO = 1.65–1.95 V
IOH = –2.0 mA, VCC = VCC min, VIO = 2.7–3.6 V
2.
Maximum ICC specifications are tested with VCC = VCCmax.
3.
ICC active while Embedded Erase or Embedded Program is in
progress.
V
2.4
2.3
Notes:
1. The ICC current listed is typically less than 5 mA/MHz, with OE# at
VIH.
June 30, 2003
VIO–0.1
V
2.5
V
4.
Automatic sleep mode enables the low power mode when
addresses remain stable for tACC + 150 ns. Typical sleep mode
current is 1 µA.
5.
Not 100% tested.
Am29PDL127H
47
A D V A N C E
I N F O R M A T I O N
TEST CONDITIONS
Table 16.
3.3 V
Test Condition
2.7 kΩ
Device
Under
Test
CL
Test Specifications
6.2 kΩ
All Speeds
Output Load
1 TTL gate
Output Load Capacitance, CL
(including jig capacitance)
70
pF
Input Rise and Fall Times
5
ns
0.0–3.0
V
Input timing measurement
reference levels
1.5
V
Output timing measurement
reference levels
1.5
V
Input Pulse Levels
Note: Diodes are IN3064 or equivalent
Figure 10.
Unit
Test Setup
KEY TO SWITCHING WAVEFORMS
WAVEFORM
INPUTS
OUTPUTS
Steady
Changing from H to L
Changing from L to H
3.0 V
Input
Don’t Care, Any Change Permitted
Changing, State Unknown
Does Not Apply
Center Line is High Impedance State (High Z)
1.5 V
Measurement Level
1.5 V
Output
0.0 V
Figure 11.
48
Input Waveforms and Measurement Levels
Am29PDL127H
June 30, 2003
A D V A N C E
I N F O R M A T I O N
AC CHARACTERISTIC
Read-Only Operations
Parameter
Speed Options
JEDEC
Std.
Description
tAVAV
tRC
Read Cycle Time (Note 1)
tAVQV
tACC
Address to Output Delay
tELQV
tCE
Chip Enable to Output Delay
Test Setup
53
63
68
83, 88 Unit
Min
55
65
85
ns
CE#, OE# = VIL
Max
55
65
85
ns
OE# = VIL
Max
55
65
85
ns
Max
20
25
30
30
ns
20
25
30
30
ns
tPACC Page Access Time
tGLQV
tOE
Output Enable to Output Delay
Max
tEHQZ
tDF
Chip Enable to Output High Z (Note 3)
Max
16
ns
tGHQZ
tDF
Output Enable to Output High Z (Notes 1, 3)
Max
16
ns
tAXQX
tOH
Output Hold Time From Addresses, CE# or
OE#, Whichever Occurs First (Notes 3)
Min
5
ns
Min
0
ns
tOEH
Read
Output Enable Hold Time
Toggle and
(Note 1)
Data# Polling
Min
10
ns
Notes:
1.
Not 100% tested.
2.
See Figure 10 and Table 16 for test specifications
June 30, 2003
3.
Measurements performed by placing a 50 ohm termination on the
data pin with a bias of VCC/2. The time from OE# high to the data
bus driven to VCC/2 is taken as tDF.
Am29PDL127H
49
A D V A N C E
I N F O R M A T I O N
AC CHARACTERISTICS
tRC
Addresses Stable
Addresses
tACC
CE#
tRH
tRH
tDF
tOE
OE#
tOEH
WE#
tCE
tOH
HIGH Z
HIGH Z
Valid Data
Data
RESET#
RY/BY#
0V
Figure 12.
Same Page
A22-A3
A2-A0
Read Operation Timings
Aa
tACC
Data
Ab
tPACC
Qa
Ad
Ac
tPACC
Qb
tPACC
Qc
Qd
CE#
OE#
Figure 13.
50
Page Read Operation Timings
Am29PDL127H
June 30, 2003
A D V A N C E
I N F O R M A T I O N
AC CHARACTERISTICS
Hardware Reset (RESET#)
Parameter
JEDEC
Std
Description
All Speed Options
Unit
tReady
RESET# Pin Low (During Embedded Algorithms)
to Read Mode (See Note)
Max
20
µs
tReady
RESET# Pin Low (NOT During Embedded
Algorithms) to Read Mode (See Note)
Max
500
ns
tRP
RESET# Pulse Width
Min
500
ns
tRH
Reset High Time Before Read (See Note)
Min
50
ns
tRPD
RESET# Low to Standby Mode
Min
20
µs
tRB
RY/BY# Recovery Time
Min
0
ns
Note: Not 100% tested.
RY/BY#
CE#, OE#
tRH
RESET#
tRP
tReady
Reset Timings NOT during Embedded Algorithms
Reset Timings during Embedded Algorithms
tReady
RY/BY#
tRB
CE#, OE#
RESET#
tRP
Figure 14.
June 30, 2003
Reset Timings
Am29PDL127H
51
A D V A N C E
I N F O R M A T I O N
AC CHARACTERISTICS
Erase and Program Operations
Parameter
Speed Options
JEDEC
Std
Description
tAVAV
tWC
Write Cycle Time (Note 1)
Min
tAVWL
tAS
Address Setup Time
Min
0
ns
tASO
Address Setup Time to OE# low during toggle bit polling
Min
15
ns
tAH
Address Hold Time
Min
tAHT
Address Hold Time From CE# or OE# high
during toggle bit polling
Min
tDVWH
tDS
Data Setup Time
Min
tWHDX
tDH
Data Hold Time
Min
0
ns
tOEPH
Output Enable High during toggle bit polling
Min
10
ns
tGHWL
tGHWL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
tELWL
tCS
CE# Setup Time
Min
0
ns
tWHEH
tCH
CE# Hold Time
Min
0
ns
tWLWH
tWP
Write Pulse Width
Min
35
40
ns
tWHDL
tWPH
Write Pulse Width High
Min
20
25
ns
tSR/W
Latency Between Read and Write Operations
Min
0
ns
tWLAX
53
63, 68
83, 88
Unit
55
65
85
ns
30
35
0
25
ns
ns
30
ns
tWHWH1
tWHWH1
Programming Operation (Note 2)
Typ
6
µs
tWHWH1
tWHWH1
Accelerated Programming Operation (Note 2)
Typ
4
µs
tWHWH2
tWHWH2
Sector Erase Operation (Note 2)
Typ
0.5
sec
tVCS
VCC Setup Time (Note 1)
Min
50
µs
tRB
Write Recovery Time from RY/BY#
Min
0
ns
Program/Erase Valid to RY/BY# Delay
Max
90
ns
tBUSY
Notes:
1. Not 100% tested.
2. See the “Erase And Programming Performance” section for more information.
52
Am29PDL127H
June 30, 2003
A D V A N C E
I N F O R M A T I O N
AC CHARACTERISTICS
Program Command Sequence (last two cycles)
tAS
tWC
Addresses
Read Status Data (last two cycles)
555h
PA
PA
PA
tAH
CE#
tCH
OE#
tWHWH1
tWP
WE#
tWPH
tCS
tDS
tDH
PD
A0h
Data
Status
tBUSY
DOUT
tRB
RY/BY#
VCC
tVCS
Note:
1. PA = program address, PD = program data, DOUT is the true data at the program address.
Figure 15.
Program Operation Timings
VHH
WP#/ACC
VIL or VIH
VIL or VIH
tVHH
Figure 16.
June 30, 2003
tVHH
Accelerated Program Timing Diagram
Am29PDL127H
53
A D V A N C E
I N F O R M A T I O N
AC CHARACTERISTICS
Erase Command Sequence (last two cycles)
tAS
tWC
2AAh
Addresses
Read Status Data
VA
SA
VA
555h for chip erase
tAH
CE#
tCH
OE#
tWP
WE#
tWPH
tCS
tWHWH2
tDS
tDH
Data
55h
30h
Status
DOUT
10 for Chip Erase
tBUSY
tRB
RY/BY#
tVCS
VCC
Note:
1. SA = sector address (for Sector Erase), VA = Valid Address for reading status data (see “Write Operation Status”.)
Figure 17.
54
Chip/Sector Erase Operation Timings
Am29PDL127H
June 30, 2003
A D V A N C E
I N F O R M A T I O N
AC CHARACTERISTICS
Addresses
tWC
tWC
tRC
Valid PA
Valid RA
tWC
tAH
tAS
Valid PA
Valid PA
tAS
tCPH
tACC
tAH
tCE
CE#
tCP
tOE
OE#
tOEH
tGHWL
tWP
WE#
tDF
tWPH
tDS
tOH
tDH
Valid
Out
Valid
In
Data
Valid
In
Valid
In
tSR/W
WE# Controlled Write Cycle
Read Cycle
Figure 18.
CE# Controlled Write Cycles
Back-to-back Read/Write Cycle Timings
tRC
Addresses
VA
VA
VA
tACC
tCE
CE#
tCH
tOE
OE#
tOEH
tDF
WE#
tOH
High Z
DQ7
Complement
Complement
DQ6–DQ0
Status Data
Status Data
True
Valid Data
High Z
True
Valid Data
tBUSY
RY/BY#
Note:
1. VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array data read
cycle.
Figure 19.
June 30, 2003
Data# Polling Timings (During Embedded Algorithms)
Am29PDL127H
55
A D V A N C E
I N F O R M A T I O N
AC CHARACTERISTICS
tAHT
tAS
Addresses
tAHT
tASO
CE#
tCEPH
tOEH
WE#
tOEPH
OE#
tDH
DQ6/DQ2
tOE
Valid Data
Valid
Status
Valid
Status
Valid
Status
(first read)
(second read)
(stops toggling)
Valid Data
RY/BY#
Note:
1. VA = Valid address; not required for DQ6. Illustration shows first two status cycle after command sequence, last status read
cycle, and array data read cycle.
Figure 20.
Enter
Embedded
Erasing
WE#
Erase
Suspend
Erase
Toggle Bit Timings (During Embedded Algorithms)
Enter Erase
Suspend Program
Erase Suspend
Read
Erase
Suspend
Program
Erase
Resume
Erase Suspend
Read
Erase
Erase
Complete
DQ6
DQ2
Note:
1. DQ2 toggles only when read at an address within an erase-suspended sector. The system may use OE# or CE# to toggle
DQ2 and DQ6.
Figure 21.
56
DQ2 vs. DQ6
Am29PDL127H
June 30, 2003
A D V A N C E
I N F O R M A T I O N
AC CHARACTERISTICS
Temporary Sector Unprotect
Parameter
JEDEC
Std
Description
All Speed Options
Unit
tVIDR
VID Rise and Fall Time (See Note)
Min
500
ns
tVHH
VHH Rise and Fall Time (See Note)
Min
250
ns
tRSP
RESET# Setup Time for Temporary Sector
Unprotect
Min
4
µs
tRRB
RESET# Hold Time from RY/BY# High for
Temporary Sector Unprotect
Min
4
µs
Note: Not 100% tested.
VID
VID
RESET#
VIL or VIH
VIL or VIH
tVIDR
tVIDR
Program or Erase Command Sequence
CE#
WE#
tRRB
tRSP
RY/BY#
Figure 22.
June 30, 2003
Temporary Sector Unprotect Timing Diagram
Am29PDL127H
57
A D V A N C E
I N F O R M A T I O N
AC CHARACTERISTICS
VID
VIH
RESET#
SA, A6,
A1, A0
Valid*
Valid*
Sector Group Protect/Unprotect
Data
60h
60h
Valid*
Verify
40h
Status
1 µs
CE#
Sector Group Protect: 150 µs
Sector Group Unprotect: 15 ms
WE#
OE#
* For sector protect, A6 = 0, A1 = 1, A0 = 0. For sector unprotect, A6 = 1, A1 = 1, A0 = 0.
Figure 23. Sector/Sector Block Protect and
Unprotect Timing Diagram
58
Am29PDL127H
June 30, 2003
A D V A N C E
I N F O R M A T I O N
AC CHARACTERISTICS
Alternate CE# Controlled Erase and Program Operations
Parameter
Speed Options
JEDEC
Std
Description
53
tAVAV
tWC
Write Cycle Time (Note 1)
Min
tAVWL
tAS
Address Setup Time
Min
tELAX
tAH
Address Hold Time
Min
30
35
ns
tDVEH
tDS
Data Setup Time
Min
25
30
ns
tEHDX
tDH
Data Hold Time
Min
0
ns
tGHEL
tGHEL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
tWLEL
tWS
WE# Setup Time
Min
0
ns
tEHWH
tWH
WE# Hold Time
Min
0
ns
tELEH
tCP
CE# Pulse Width
Min
35
40
ns
tEHEL
tCPH
CE# Pulse Width High
Min
20
25
ns
tWHWH1
tWHWH1
Programming Operation
(Note 2)
Typ
6
µs
tWHWH1
tWHWH1
Accelerated Programming Operation (Note 2)
Typ
4
µs
tWHWH2
tWHWH2
Sector Erase Operation (Note 2)
Typ
0.5
sec
55
63, 68 83, 88
65
85
0
Unit
ns
ns
Notes:
1. Not 100% tested.
2. See the “Erase And Programming Performance” section for more information.
June 30, 2003
Am29PDL127H
59
A D V A N C E
I N F O R M A T I O N
AC CHARACTERISTICS
555 for program
2AA for erase
PA for program
SA for sector erase
555 for chip erase
Data# Polling
Addresses
PA
tWC
tAS
tAH
tWH
WE#
tGHEL
OE#
tWHWH1 or 2
tCP
CE#
tWS
tCPH
tBUSY
tDS
tDH
DQ7#
Data
tRH
A0 for program
55 for erase
DOUT
PD for program
30 for sector erase
10 for chip erase
RESET#
RY/BY#
Notes:
1.
Figure indicates last two bus cycles of a program or erase operation.
2.
PA = program address, SA = sector address, PD = program data.
3.
DQ7# is the complement of the data written to the device. DOUT is the data written to the device.
Figure 24.
60
Alternate CE# Controlled Write (Erase/Program) Operation Timings
Am29PDL127H
June 30, 2003
A D V A N C E
I N F O R M A T I O N
ERASE AND PROGRAMMING PERFORMANCE
Parameter
Typ (Note 1)
Max (Note 2)
Unit
Comments
Sector Erase Time
0.4
5
sec
Chip Erase Time
108
Excludes 00h programming
prior to erasure (Note 4)
sec
Word Program Time
7
210
µs
Accelerated Word Program Time
4
120
µs
Chip Program Time (Note 3)
50
200
sec
Excludes system level
overhead (Note 5)
Notes:
1. Typical program and erase times assume the following conditions: 25°C, 3.0 V VCC, 1,000,000 cycles. Additionally,
programming typicals assume checkerboard pattern. All values are subject to change.
2. Under worst case conditions of 90°C, VCC = 2.7 V, 1,000,000 cycles. All values are subject to change.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
program faster than the maximum program times listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Tables
Table 13 for further information on command definitions.
6. The device has a minimum erase and program cycle endurance of 1,000,000 cycles.
LATCHUP CHARACTERISTICS
Description
Min
Max
Input voltage with respect to VSS on all pins except I/O pins
(including A9, OE#, and RESET#)
–1.0 V
13 V
Input voltage with respect to VSS on all I/O pins
–1.0 V
VCC + 1.0 V
–100 mA
+100 mA
VCC Current
Note: Includes all pins except VCC. Test conditions: VCC = 3.0 V, one pin at a time.
BGA PIN CAPACITANCE
Parameter
Symbol
Parameter Description
Test Setup
Typ
Max
Unit
CIN
Input Capacitance
VIN = 0
4.2
5.0
pF
COUT
Output Capacitance
VOUT = 0
5.4
6.5
pF
CIN2
Control Pin Capacitance
VIN = 0
3.9
4.7
pF
Notes:
1. Sampled, not 100% tested.
2. Test conditions TA = 25°C, f = 1.0 MHz.
DATA RETENTION
Parameter Description
Test Conditions
Min
Unit
150°C
10
Years
125°C
20
Years
Minimum Pattern Data Retention Time
June 30, 2003
Am29PDL127H
61
A D V A N C E
I N F O R M A T I O N
PHYSICAL DIMENSIONS
LAA064—64-Ball Fortified Ball Grid Array 13 x 11 mm package
62
Am29PDL127H
June 30, 2003
A D V A N C E
I N F O R M A T I O N
PHYSICAL DIMENSIONS
VBB080—80-Ball Fine-pitch Ball Grid Array 11.5 x 9 mm package
D
D1
A
e
0.05 C
(2X)
8
e
7
7
6
SE
5
E1
E
4
3
2
1
M
L
K
J
H
G
F
E
INDEX MARK
PIN A1
CORNER
6
0.05 C
(2X)
B
A
A1 CORNER
SD
NXφb
φ 0.08 M C
φ 0.15 M C A B
TOP VIEW
BOTTOM VIEW
0.10 C
A2
A
A1
C
7
B
10
D
C
0.08 C
SEATING PLANE
SIDE VIEW
NOTES:
PACKAGE
VBB 080
JEDEC
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M-1994.
N/A
2. ALL DIMENSIONS ARE IN MILLIMETERS.
11.50 mm x 9.00 mm NOM
PACKAGE
SYMBOL
MIN
NOM
MAX
A
---
---
1.00
A1
0.20
---
---
A2
0.62
---
0.76
3. BALL POSITION DESIGNATION PER JESD 95-1, SPP-010 (EXCEPT
AS NOTED).
NOTE
4.
OVERALL THICKNESS
BALL HEIGHT
SYMBOL "ME" IS THE BALL COLUMN MATRIX SIZE IN THE
"E" DIRECTION.
BODY THICKNESS
D
11.50 BSC.
BODY SIZE
E
9.00 BSC.
BODY SIZE
N IS THE TOTAL NUMBER OF SOLDER BALLS.
D1
8.80 BSC.
BALL FOOTPRINT
E1
5.60 BSC.
BALL FOOTPRINT
MD
12
ROW MATRIX SIZE D DIRECTION
ME
8
ROW MATRIX SIZE E DIRECTION
N
80
TOTAL BALL COUNT
φb
0.30
0.35
0.40
e REPRESENTS THE SOLDER BALL GRID PITCH.
5. SYMBOL "MD" IS THE BALL ROW MATRIX SIZE IN THE
"D" DIRECTION.
6
DIMENSION "b" IS MEASURED AT THE MAXIMUM BALL
DIAMETER IN A PLANE PARALLEL TO DATUM C.
7
SD AND SE ARE MEASURED WITH RESPECT TO DATUMS
A AND B AND DEFINE THE POSITION OF THE CENTER
SOLDER BALL IN THE OUTER ROW.
WHEN THERE IS AN ODD NUMBER OF SOLDER BALLS IN
THE OUTER ROW PARALLEL TO THE D OR E DIMENSION,
RESPECTIVELY, SD OR SE = 0.000.
BALL DIAMETER
e
0.80 BSC.
BALL PITCH
SD / SE
0.40 BSC.
SOLDER BALL PLACEMENT
(A3-A6, B3-B6, L3-L6, -M3-M6) DEPOPULATED SOLDER BALLS
WHEN THERE IS AN EVEN NUMBER OF SOLDER BALLS IN
THE OUTER ROW, SD OR SE = e/2
8. NOT USED.
9. "+" INDICATES THE THEORETICAL CENTER OF DEPOPULATED
BALLS.
10 A1 CORNER TO BE IDENTIFIED BY CHAMFER, LASER OR INK
MARK, METALLIZED MARK INDENTATION OR OTHER MEANS.
3233 \ 16-038.9h
June 30, 2003
Am29PDL127H
63
A D V A N C E
I N F O R M A T I O N
REVISION SUMMARY
Revision A (September 30, 2002)
Initial release.
command is then required to return the device to
reading array data.”
Revision A+1 (October 29, 2002)
Customer Lockable: SecSi Sector NOT
Programmed or Protected at the factory.
Distinctive Characteristics
Added second bullet, SecSi sector-protect verify text
and figure 3.
Added VIO option at 1.8 V and 3 V I/O to Enhanced VIO
Control section.
Modified wording of WP#/ACC (Write Protect/Acceleration) Input.
SecSi Sector Flash Memory Region and Enter
SecSi Sector/Exit SecSi Sector Command
Sequence
Modified the Product Selector Guide Table.
Added notes, “Note that the ACC function and unlock
bypass modes are not available when the SecSi sector
is enabled.”
Ordering Information
Sector Erase Command Sequence and Chip Erase
Command Sequence
Product Selector Guide
Changed package type from TBD to VK.
Added VKI to Valid combinations table.
Added Process Technology to Standard Product section.
Added “Note that the SecSi Sector, autoselect, and
CFI functions are unavailable when a [program/erase]
operation is in progress.”
Table 13. Memory Array Command Definitions
Revised Order Numbers and Package Markings to reflect speed option changes.
Changed the first address of the unlock bypass reset
command sequence from BA to XXX.
Global
CMOS Compatible
Changed 55 speed option to 53, changed 65 speed
option to 63 and 68.
Added ILR parameter to table.
Deleted IACC parameter from table.
Table 1. Am29PDL127H Device Bus Operations
Added note #2.
Revision A+2 (January 24, 2003)
Requirements for Reading Array Data
Ordering Information
Reworded Page Mode Read section
Corrected the package marking for package type PC
on 83 and 88 speed options.
Common Flash Memory Interface (CFI)
Changed wording in last sentence of third paragraph
from, “...the autoselect mode.” to “...reading array
data.”
Revision A+3 (June 20, 2003)
Distinctive Characteristics
Changed the active read current to 55 mA.
Changed CFI website address.
Product Selector Guide
Command Definitions
Changed wording in last sentence of first paragraph
from, “...resets the device to reading array data.” to
...”may place the device to an unknown state. A reset
Added row to table to expand speed options and allow
for another VCC range.
Revision A+4 (June 30, 2003)
Product Selector Guide
Corrected typo in the VCC,VIO range for the 53 speed
option.
64
Am29PDL127H
June 30, 2003
A D V A N C E
I N F O R M A T I O N
Trademarks
Copyright © 2003 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
ExpressFlash is a trademark of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
June 30, 2003
Am29PDL127H
65
Representatives in U.S. and Canada
Sales Offices and Representatives
North America
ALABAMA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 2 5 6 ) 8 3 0 - 9 1 9 2
ARIZONA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 6 0 2 ) 24 2 - 4 4 0 0
CALIFORNIA,
Irvine . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 9 4 9 ) 4 5 0 - 7 5 0 0
Sunnyvale . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 4 0 8 ) 7 3 2 - 24 0 0
COLORADO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 3 0 3 ) 74 1 - 2 9 0 0
CONNECTICUT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 2 0 3 ) 2 6 4 - 7 8 0 0
FLORIDA,
Clearwater . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 7 2 7 ) 7 9 3 - 0 0 5 5
Miami (Lakes) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 3 0 5 ) 8 2 0 - 1 1 1 3
GEORGIA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 7 7 0 ) 8 1 4 - 0 2 2 4
ILLINOIS,
Chicago . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 6 3 0 ) 7 7 3 - 4 4 2 2
MASSACHUSETTS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 7 8 1 ) 2 1 3 - 6 4 0 0
MICHIGAN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 2 4 8 ) 4 7 1 - 6 2 9 4
MINNESOTA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 6 1 2 ) 74 5 - 0 0 0 5
NEW JERSEY,
Chatham . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 9 7 3 ) 7 0 1 - 1 7 7 7
NEW YORK . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 7 1 6 ) 4 2 5 - 8 0 5 0
NORTH CAROLINA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 9 1 9 ) 8 4 0 - 8 0 8 0
OREGON . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 5 0 3 ) 24 5 - 0 0 8 0
PENNSYLVANIA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 2 1 5 ) 3 4 0 - 1 1 8 7
SOUTH DAKOTA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 6 0 5 ) 69 2 - 5 7 7 7
TEXAS,
Austin . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 5 1 2 ) 3 4 6 - 7 8 3 0
Dallas . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 9 7 2 ) 9 8 5 - 1 3 4 4
Houston . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 2 8 1 ) 3 76 - 8 0 8 4
VIRGINIA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 7 0 3 ) 7 3 6 - 9 5 6 8
International
AUSTRALIA, North Ryde . . . . . . . . . . . . . . . . . . . . . . . T E L ( 6 1 ) 2 - 8 8 - 7 7 7 - 2 2 2
BELGIUM, Antwerpen . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 3 2 ) 3 - 2 4 8 - 4 3 - 0 0
BRAZIL, San Paulo . . . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 5 5 ) 1 1 - 5 5 0 1 - 2 1 0 5
CHINA,
Beijing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 8 6 ) 1 0 - 6 5 1 0 - 2 1 8 8
Shanghai . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 8 6 ) 2 1 - 6 3 5 - 0 0 8 3 8
Shenzhen . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 8 6 ) 7 5 5 - 24 6 - 1 5 5 0
FINLAND, Helsinki . . . . . . . . . . . . . . . . . . . . . . T E L ( 3 5 8 ) 8 8 1 - 3 1 1 7
FRANCE, Paris . . . . . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 3 3 ) - 1 - 4 9 7 5 1 0 1 0
GERMANY,
Bad Homburg . . . . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 4 9 ) - 6 1 7 2 - 9 2 6 7 0
Munich . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 4 9 ) - 8 9 - 4 5 0 5 3 0
HONG KONG, Causeway Bay . . . . . . . . . . . . . . . . . . . T E L ( 8 5 ) 2 - 2 9 5 6 - 0 3 8 8
ITALY, Milan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 3 9 ) - 0 2 - 3 8 1 9 6 1
INDIA, New Delhi . . . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 9 1 ) 1 1 - 6 2 3 - 8 6 2 0
JAPAN,
Osaka . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 8 1 ) 6 - 6 2 4 3 - 3 2 5 0
Tokyo . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 8 1 ) 3 - 3 3 4 6 - 7 6 0 0
KOREA, Seoul . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 8 2 ) 2 - 3 4 6 8 - 2 6 0 0
RUSSIA, Moscow . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TEL(7)-095-795-06-22
SWEDEN, Stockholm . . . . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 4 6 ) 8 - 5 62 - 5 4 0 - 0 0
TAIWAN,Taipei . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 8 8 6 ) 2 - 8 7 7 3 - 1 5 5 5
UNITED KINGDOM,
Frimley . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 4 4 ) 1 2 7 6 - 8 0 3 1 0 0
Haydock . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 4 4 ) 1 9 4 2 - 2 7 2 8 8 8
Advanced Micro Devices reserves the right to make changes in its product without notice
in order to improve design or performance characteristics.The performance
characteristics listed in this document are guaranteed by specific tests, guard banding,
design and other practices common to the industry. For specific testing details, contact
your local AMD sales representative.The company assumes no responsibility for the use of
any circuits described herein.
© Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD Arrow logo and combination thereof, are trademarks of
Advanced Micro Devices, Inc. Other product names are for informational purposes only
and may be trademarks of their respective companies.
es
ARIZONA,
Tempe - Centaur . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 4 8 0 ) 8 3 9 - 2 3 2 0
CALIFORNIA,
Calabasas - Centaur . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 8 1 8 ) 8 7 8 - 5 8 0 0
Irvine - Centaur . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 9 4 9 ) 2 6 1 - 2 1 2 3
San Diego - Centaur. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 8 5 8 ) 2 7 8 - 4 9 5 0
Santa Clara - Fourfront. . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 4 0 8 ) 3 5 0 - 4 8 0 0
CANADA,
Burnaby, B.C. - Davetek Marketing. . . . . . . . . . . . . . . . . . . . ( 6 0 4 ) 4 3 0 - 3 6 8 0
Calgary, Alberta - Davetek Marketing. . . . . . . . . . . . . . . . . ( 4 0 3 ) 2 8 3 - 3 5 7 7
Kanata, Ontario - J-Squared Tech. . . . . . . . . . . . . . . . . . . . ( 6 1 3 ) 5 9 2 - 9 5 4 0
Mississauga, Ontario - J-Squared Tech. . . . . . . . . . . . . . . . . . ( 9 0 5 ) 6 7 2 - 2 0 3 0
St Laurent, Quebec - J-Squared Tech. . . . . . . . . . . . . . . . ( 5 1 4 ) 7 4 7 - 1 2 1 1
COLORADO,
Golden - Compass Marketing . . . . . . . . . . . . . . . . . . . . . . ( 3 0 3 ) 2 7 7 - 0 4 5 6
FLORIDA,
Melbourne - Marathon Technical Sales . . . . . . . . . . . . . . . . ( 3 2 1 ) 7 2 8 - 7 7 0 6
Ft. Lauderdale - Marathon Technical Sales . . . . . . . . . . . . . . ( 9 5 4 ) 5 2 7 - 4 9 4 9
Orlando - Marathon Technical Sales . . . . . . . . . . . . . . . . . . ( 4 0 7 ) 8 7 2 - 5 7 7 5
St. Petersburg - Marathon Technical Sales . . . . . . . . . . . . . . ( 7 2 7 ) 8 9 4 - 3 6 0 3
GEORGIA,
Duluth - Quantum Marketing . . . . . . . . . . . . . . . . . . . . . ( 6 7 8 ) 5 8 4 - 1 1 2 8
ILLINOIS,
Skokie - Industrial Reps, Inc. . . . . . . . . . . . . . . . . . . . . . . . . ( 8 4 7 ) 9 6 7 - 8 4 3 0
INDIANA,
Kokomo - SAI . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 7 6 5 ) 4 5 7 - 7 2 4 1
IOWA,
Cedar Rapids - Lorenz Sales . . . . . . . . . . . . . . . . . . . . . . ( 3 1 9 ) 2 9 4 - 1 0 0 0
KANSAS,
Lenexa - Lorenz Sales . . . . . . . . . . . . . . . . . . . . . . . . . ( 9 1 3 ) 4 6 9 - 1 3 1 2
MASSACHUSETTS,
Burlington - Synergy Associates . . . . . . . . . . . . . . . . . . . . . ( 7 8 1 ) 2 3 8 - 0 8 7 0
MICHIGAN,
Brighton - SAI . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 8 1 0 ) 2 2 7 - 0 0 0 7
MINNESOTA,
St. Paul - Cahill, Schmitz & Cahill, Inc. . . . . . . . . . . . . . . . . . ( 6 5 1 ) 69 9 - 0 2 0 0
MISSOURI,
St. Louis - Lorenz Sales . . . . . . . . . . . . . . . . . . . . . . . . . . ( 3 1 4 ) 9 9 7 - 4 5 5 8
NEW JERSEY,
Mt. Laurel - SJ Associates . . . . . . . . . . . . . . . . . . . . . . . . . ( 8 5 6 ) 8 6 6 - 1 2 3 4
NEW YORK,
Buffalo - Nycom, Inc. . . . . . . . . . . . . . . . . . . . . . . . . . ( 7 1 6 ) 7 4 1 - 7 1 1 6
East Syracuse - Nycom, Inc. . . . . . . . . . . . . . . . . . . . . . . ( 3 1 5 ) 4 3 7 - 8 3 4 3
Pittsford - Nycom, Inc. . . . . . . . . . . . . . . . . . . . . . . . . . . ( 7 1 6 ) 5 8 6 - 3 6 6 0
Rockville Centre - SJ Associates . . . . . . . . . . . . . . . . . . . . ( 5 1 6 ) 5 3 6 - 4 2 4 2
NORTH CAROLINA,
Raleigh - Quantum Marketing . . . . . . . . . . . . . . . . . . . . . . ( 9 1 9 ) 8 4 6 - 5 7 2 8
OHIO,
Middleburg Hts - Dolfuss Root & Co. . . . . . . . . . . . . . . . . ( 4 4 0 ) 8 1 6 - 1 6 6 0
Powell - Dolfuss Root & Co. . . . . . . . . . . . . . . . . . . . . . . ( 6 1 4 ) 7 8 1 - 0 7 2 5
Vandalia - Dolfuss Root & Co. . . . . . . . . . . . . . . . . . . . . . ( 9 3 7 ) 8 9 8 - 9 6 1 0
Westerville - Dolfuss Root & Co. . . . . . . . . . . . . . . . . . . ( 6 1 4 ) 5 2 3 - 1 9 9 0
OREGON,
Lake Oswego - I Squared, Inc. . . . . . . . . . . . . . . . . . . . . . . ( 5 0 3 ) 6 7 0 - 0 5 5 7
UTAH,
Murray - Front Range Marketing . . . . . . . . . . . . . . . . . . . . ( 8 0 1 ) 2 8 8 - 2 5 0 0
VIRGINIA,
Glen Burnie - Coherent Solution, Inc. . . . . . . . . . . . . . . . . ( 4 1 0 ) 7 6 1 - 2 2 5 5
WASHINGTON,
Kirkland - I Squared, Inc. . . . . . . . . . . . . . . . . . . . . . . . . . . ( 4 2 5 ) 8 2 2 - 9 2 2 0
WISCONSIN,
Pewaukee - Industrial Representatives . . . . . . . . . . . . . . . . ( 2 6 2 ) 5 74 - 9 3 9 3
Representatives in Latin America
ARGENTINA,
Capital Federal Argentina/WW Rep. . . . . . . . . . . . . . . . . . . .54-11)4373-0655
CHILE,
Santiago - LatinRep/WWRep. . . . . . . . . . . . . . . . . . . . . . . . . .(+562)264-0993
COLUMBIA,
Bogota - Dimser. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 5 7 1 ) 4 1 0 - 4 1 8 2
MEXICO,
Guadalajara - LatinRep/WW Rep. . . . . . . . . . . . . . . . . . . . ( 5 2 3 ) 8 1 7 - 3 9 0 0
Mexico City - LatinRep/WW Rep. . . . . . . . . . . . . . . . . . . . ( 5 2 5 ) 7 5 2 - 2 7 2 7
Monterrey - LatinRep/WW Rep. . . . . . . . . . . . . . . . . . . . . ( 5 2 8 ) 3 69 - 6 8 2 8
PUERTO RICO,
Boqueron - Infitronics. . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 7 8 7 ) 8 5 1 - 6 0 0 0
One AMD Place, P.O. Box 3453, Sunnyvale, CA 94088-3453 408-732-2400
TWX 910-339-9280 TELEX 34-6306 800-538-8450 http://www.amd.com
©2003 Advanced Micro Devices, Inc.
01/03
Printed in USA
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