AMS AMS2N7002 N-channel enhancement mode Datasheet

AMS 2N7002
N-CHANNEL
ENHANCEMENT MODE
3
DESCRIPTION
The AMS 2N7002 has been designed to minimize on-state
resistance while provide rugged, reliable, and fast switching
performance. It can be used in most applications requiring up to
400mA DC and can deliver pulsed currents up to 2A. The product
is particularly suited for low voltage, low current applications such
as small servo motor control, power MOSFET gate drivers, and
other switching applications
2
1
SOT-23-3
FEATURES
* High Density Cell Design for Low RDS(ON).
* Voltage Controlled Small Signal Switch
* Rugged and Reliable
* High Saturation Current Capability
SYMBOL
3.Drain
2.Gate
1.Source
ORDERING INFORMATION
Ordering Number
Package
2N7002G-AE2-R
SOT-23-3
1
S
2
G
Pin Assignment
3
4
5
D
-
2N7002G-AE2-R
(1)PackingType
(1)R:Tape Reel
(2)Package Type
(2)AE2:SOT-23-3
(3)Halogen Free
(3)G:HalogenFree
MARKING
3PG
7002k
SOT-23-3
SOT-23-3
1
Advanced Monolithic Systems
http://www.ams-semitech.com
6
-
Packing
Tape Reel
AMS 2N7002
ABSOLUTE MAXIMUM RATINGS
(Ta=25°C unless otherwise noted.)
PARAMETER
Drain-Source Voltage
Drain-Gate Voltage (RGS ≤1MΩ)
Continuous
Gate Source Voltage
Non Repetitive(tp<50μs)
Continuous
Drain Current
Pulsed
Power Dissipation
Derated Above 25°C
Junction Temperature
Storage Temperature
SYMBOL
VDSS
VDGR
VGSS
ID
PD
TJ
TSTG
RATINGS
60
60
±20
±40
300
800
200
1.6
+ 150
-55 ~ +150
UNIT
V
V
V
mA
mW
mW/°C
°C
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
θJA
Junction to Ambient
ELECTRICAL CHARACTERISTICS
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
RATINGS
625
(TA=25°C, unless otherwise specified)
SYMBOL
TEST CONDITIONS
MIN
BVDSS
IDSS
IGSSF
IGSSR
VGS=0V, ID=10μA
VDS=60V, VGS =0V
VGS =20V, VDS=0V
VGS =-20V, VDS=0V
60
ON CHARACTERISTICS (Note)
Gate Threshold Voltage
VGS(TH)
1
Drain-Source On-Voltage
VDS (ON)
VGS = VDS, ID=250μA
VGS = 10V, ID=500mA
VGS = 5.0V, ID=50mA
VGS=10V,VDS≥2VDS(ON)
VGS =10V, ID=500mA
VGS =5.0V, ID=50mA
Gate-Source Leakage Current
On-State Drain Current
ID(ON)
Static Drain-Source On-Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
RDS (ON)
CISS
COSS
CRSS
TYP
500
VDS=25V,VGS=0V,f=1.0MHz
2
http://www.ams-semitech.com
V
μA
nA
nA
2.1
0.6
0.09
2700
1.2
1.7
2.5
3.75
1.5
3.5
7.5
mA
Ω
Ω
20
11
4
50
25
5
pF
pF
pF
20
nS
20
nS
1.5
V
0.8
A
115
mA
tON
Advanced Monolithic Systems
MAX UNIT
1
100
-100
VDD=30V, RL=150Ω
ID=200mA, VGS =10V
RGEN =25Ω
VDD=30V, RL=25Ω
ID=200mA, VGS=10V
Turn-Off Time
tOFF
RGEN =25Ω
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
VSD
VGS=0V, Is=115mA (Note )
Maximum Pulsed Drain-Source Diode
ISM
Forward Current
Maximum Continuous Drain-Source
Is
Diode Forward Current
Note: Pulse Test: Pulse Width≤300μs, Duty Cycle≤2.0%
Turn-On Time
UNIT
°C/W
0.88
V
V
AMS 2N7002
TEST CIRCUIT AND WAVEFORM
VDD
RL
VIN
VOUT
D
VGS
R GEN
DUT
G
S
Figure 1
t on
t off
t d (off)
tr
t d (on)
90%
Output , Vout
tf
90%
10%
10%
Inverted
90%
Input , Vin
50%
50%
10%
Pulse Width
Figure 2. Switching Waveforms
3
Advanced Monolithic Systems
http://www.ams-semitech.com
AMS 2N7002
TYPICAL CHARACTERISTICS
On-Resistance Varisation with Gate
Voltage and Drain Current
On-Resistance Characteristics
9.0V
Drain-Source Current, ID (A)
VGS=10V
3
8.0V
7.0V
VGS=4.0V 4.5V
1.5
6.0V
1
5.0V
0.5
2.5
Normalized Drain-Source
ON-Resistance, RDS (ON)
2
4.0V
2
3
4
1
Drain-Source Voltage, VDS(V)
0
6.0V
2
7.0V
8.0V
1.5
9.0V
10V
1
3.0V
0
5.0V
0.5
0
5
1.6
2
On-Resistance Varisation with Drain
Current and Temperature
3
2
1.75
Normalized Drain-Source ONResistance, RDS (ON)
VGS=10V
ID=500mA
1.5
1.25
1
0.75
VGS =10V
2.5
TJ =125℃
2
1.5
25℃
1
0.5
0
0.5
-50
- 25
0
25
50
75
100 125 150
0.4
0
25℃
1.1
Normalized Gate-Source Threshold
Voltage, VGS(TH)
VDS=10V
1.6
2
Gate Threshold Varisation with Temperature
Transfer Characteristics
2
1.2
0.8
Drain Current,ID (A)
Junction Temperature, TJ (°C)
125℃
1.6
Drain Current, ID (A)
1.2
0.8
Drain Current, ID (A)
On-Resistance Varisation with Temperature
Normalized Drain-Source
ON- Resistance, RDS(ON)
0.4
1.8
1.2
0.4
0
VGS = VDS
ID = 1mA
1.05
1
0.95
0.9
0.85
0.8
0
2
4
6
8
10
-50
Gate to Source Voltage, VGS (V)
-25
0
25
75
100 125 150
Junction Temperature, TJ (°C)
4
Advanced Monolithic Systems
50
http://www.ams-semitech.com
AMS 2N7002
TYPICAL CHARACTERICS (Cont.)
Body Diode Forward Voltage Varisation
with Temperature
Breakdown Voltage Varisation
with Temperature
2
ID = 250μA
VGS=0V
1
1.075
Reverse Drain Current, IS (A)
Normalized Drain-Source Breakdown
Voltage, BVDSS
1.1
1.05
1.025
1
0.975
0.95
0.5
TJ =125℃
25℃
0.1
0.05
0.01
0.005
0.001
0.925
-50
-25
0
25
50
75
0.2
100 125 150
0.4
0.6
1
1.2
Body Diode Forward Voltage, VSD (V)
Drain Current, ID (A)
Normalized Effective Transient Thermal
Resistance, r (t)
Capacitance (pF)
Gate-Source Voltage, VGS (V)
Junction Temperature, TJ (°C)
5
Advanced Monolithic Systems
0.8
http://www.ams-semitech.com
1.4
AMS 2N7002
Disclaimer:
•
AMS reserves the right to make changes to the information herein for the improvement of the design and performance
without further notice! Customers should obtain the latest relevant information before placing orders and should verify
that such information is complete and current.
•
All semiconductor products malfunction or fail with some probability under special conditions. When using AMS products
in system design or complete machine manufacturing, it is the responsibility of the buyer to comply with the safety
standards strictly and take essential measures to avoid situations in which a malfunction or failure of such AMS products
could cause loss of body injury or damage to property.
•
AMS will supply the best possible product for customers!
6
Advanced Monolithic Systems
http://www.ams-semitech.com
Similar pages