AMS AMS8205A Super high density cell design for extremely low rds(on) Datasheet

AMS8205A
DESCRIPTION
AMS8205A is the dual N-Channel enhancement mode power field effect transistor
which is produced using high cell density, DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application, such as notebook computer power
management and other battery powered circuits, where high-side switching is required.
FEATURE
PIN CONFIGURATION
TSSOP-8
D2
8
S2
7
S2
6
G2
5
z
z
z
z
z
AMS8205A
SYA
1
D1
2
S1
3
S1
20V/6.0A, RDS(ON) = 30m-ohm@VGS =4.5V
20V/5.0A, RDS(ON) =42m-ohm@VGS =2.5V
Super high density cell design for extremely
low RDS(ON)
Exceptional low on-resistance and maximum
DC current capability
TSSOP-8 package design
4
G1
S:Subcontractor
Y: Year
A: Week Code
ORDERING INFORMATION
Part Number
AMS8205A
Package
Part Marking
TSSOP-8
SYA
Week Code Code : A ~ Z(1~26) ; a ~ z(27~52)
AMS8205A
ST8 : TSSOP-8; R: Tape Reel ; G: Pb – Free
1
Advanced Monolithic Systems
http://www.ams-semitech.com
AMS8205A
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Drain-Source Voltage
VDSS
20
V
Gate-Source Voltage
VGSS
+/-20
V
ID
6.0
A
Continuous Drain Current
(TJ=150℃)
TA=25°C
3.4
TA=70°C
Pulsed Drain Current
IDM
30
A
Continuous Source Current (Diode Conduction)
IS
2
A
Power Dissipation
PD
2.0
W
TA=25°C
1.2
TA=70°C
Operation Junction Temperature
TJ
-40/140
℃
Storage Temperature Range
TSTG
-55/150
℃
Thermal Resistance-Junction to Ambient
RθJA
105
℃/W
2
Advanced Monolithic Systems
http://www.ams-semitech.com
AMS8205A
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
Parameter
Condition
Symbol
Min
Typ
Max Unit
Static
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
V(BR)DSS
VGS=0V,ID=250uA
V
VDS=0V,VGS=+/-20V
±100
nA
VDS=20V,VGS=0V
1
VDS=20V,VGS=0V
TJ=85℃
VDS≦5V,VGS=4.5V
5
VDS=VGS,ID=250uA
Gate Leakage Current
IGSS
Zero Gate Voltage Drain
Current
IDSS
On-State Drain Current
ID(on)
Forward Transconductance
RDS(on)
gfs
Diode Forward Voltage
Dynamic
Total Gate Charge
VSD
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
Turn-On Time
Turn-Off Time
0.6
uA
A
6
VGS=4.5V,ID=6.0A
0.024 0.030
VGS=2.5V,ID=5.0A
0.032 0.042
VDS=5V,ID=3.6A
10
IS=1.7A,VGS=0V
0.8
Qg
Td(on)
tr
Td(off)
tf
V
1.2
VGS(th)
Drain-source On-Resistance
20
Ω
S
1.2
V
10.5
VDS=10V,VGS=4.5V,VDS=4A
2.5
nC
2.1
VDS=8V,VGS=0V
f=1MHz
VDD=10V, RL=10Ω, ID=1.0A,
VGEN=4.5V, RG=10Ω
3
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805
155
122
14
6
45
20
pF
nS
AMS8205A
TYPICAL CHARACTERICTICS
4
Advanced Monolithic Systems
http://www.ams-semitech.com
AMS8205A
TYPICAL CHARACTERICTICS
5
Advanced Monolithic Systems
http://www.ams-semitech.com
AMS8205A
TYPICAL CHARACTERICTICS
6
Advanced Monolithic Systems
http://www.ams-semitech.com
AMS8205A
TSSOP-8 PACKAGE OUTLINE
7
Advanced Monolithic Systems
http://www.ams-semitech.com
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