Panasonic AN8004M 3-pin positive output low dropout voltage regulator 50ma type Datasheet

AN8000/AN8000M Series
3-pin Positive Output Low Dropout Voltage Regulator (50mA Type)
■ Overview
Unit:mm
AN8000 Series
5.0±0.2
13.5±0.5
5.1±0.2
The AN8000 series is 3-pin low-dropout fixed positive
output monolithic voltage regulators. Since thier power
consumption can be minimized, they are suitable for battery stabilizing power supply and reference voltage. Thirteen types of output voltage are available ; 2V, 2.5V, 3V,
3.5V (TO-92 only) , 4V, 4.5V, 5V, 6V, 7V, 8V, 8.5V, 9V,
and 10V.
4.0±0.2
+ 0.2
0.45 – 0.1
2.54
2.3±0.2
■ Features
1 : Input
2 : Output
3 : GND
2 3 1
• Input/output voltage difference : 0.3V (max.)
• Output current of up to 50mA
• Low bias current ; 0.6mA (typ.)
• Output voltage ; 2V, 2.5V, 3V, 3.5V (TO-92 only) , 4V,
4.5V, 5V, 6V, 7V, 8V, 8.5V, 9V, and 10V.
• Over-voltage protective circuit built-in.
(Bottom View)
TO-92 Plastic Package (SSIP003-P-0000)
Unit:mm
AN8000M Series
4.6max.
1.8max.
2.6max.
0.58max.
1.5
0.8min.
45˚
2.6
0.48max.
4.25max.
1.6max.
0.44max.
3.0
1 : Output
2 : GND
3 : Input
1
2
3
3-pin Mini Power type Plastic Package (TO-243) (HSIP003-P-0000B)
■ Block Diagram
Starter
Voltage
Reference
+
Error
Amp.
–
R2
R1
Current
Limiter
1
3
3
2
–
2
+
VI
1
VO
COUT
: TO-92
: TO-243
R1=5kΩ
CIN=0.33µF
COUT=10µF
■ Absolute Maximum Ratings (Ta=25˚C)
Symbol
Rating
Supply voltage
Parameter
VI
20
Supply current
ICC
Power dissipation
PD
100
650 *
Operating ambient temperature
Topr
–30 to+80
Storage temperature
AN8000 Series
V
mA
mW
˚C
–55 to+150
Tstg
AN8000M Series
Unit
˚C
–55 to+125
* Mounting onto the PCB (20 × 20 × 1.7mm glass epoxy copper foil 1 cm2 or more), for AN8000M Series.
■ Electrical Characteristics (Ta=25˚C)
· AN8002/AN8002M (2V Type)
Parameter
Symbol
Output voltage
VO
Line regulation
REGIN
Load regulation
REGL
Minimum I/O voltage difference
VDIF (min.)
Condition
Tj=25˚C
min
typ
max
Unit
2
2.08
V
2
40
mV
IO=1 to 40mA, Tj=25˚C
7
20
mV
IO=1 to 50mA, Tj=25˚C
10
25
mV
VI=1.9V, IO=20mA, Tj=25˚C
0.06
0.2
V
VI=1.9V, IO=50mA, Tj=25˚C
0.12
0.3
V
0.6
1
mA
1.92
VI=2.5 to 8V, Tj=25˚C
Bias current
Ibias
IO=0mA, Tj=25˚C
Ripple rejection ratio
RR
VI=3 to 5V, f=120Hz
Vno
f=10Hz to 100kHz
60
µV
∆VO/Ta
Tj=–30 to+125˚C
0.1
mV/˚C
Output noise voltage
Output voltage temperature coefficient
62
74
dB
Note1) The specified condition Tj=25˚C means that the test should be conducted with each test time reduced (within 10ms) so that
the drift in characteristic value due to a temperature rise at chip junction can be ignored.
Note2) Unless otherwise specified, VI=3V, IO=20mA, CO=10µF
· AN8025/AN8025M (2.5V Type)
Parameter
Symbol
Output voltage
VO
Line regulation
REGIN
Load regulation
REGL
Minimum I/O voltage difference
VDIF (min.)
Condition
Tj=25˚C
max
Unit
2.5
2.6
V
50
mV
IO=1 to 40mA, Tj=25˚C
8
20
mV
IO=1 to 50mA, Tj=25˚C
12.5
25
mV
VI=2.4V, IO=20mA, Tj=25˚C
0.07
0.2
V
VI=2.4V, IO=50mA, Tj=25˚C
0.12
0.3
V
0.6
1
mA
Ibias
IO=0mA, Tj=25˚C
Ripple rejection ratio
RR
VI=3.5 to 5.5V, f=120Hz
Vno
f=10Hz to 100kHz
∆VO/Ta
Tj=–30 to+125˚C
Output voltage temperature coefficient
typ
2.5
2.4
VI=3 to 8.5V, Tj=25˚C
Bias current
Output noise voltage
min
60
72
dB
65
µV
0.13
mV/˚C
Note1) The specified condition Tj=25˚C means that the test should be conducted with each test time reduced (within 10ms) so that
the drift in characteristic value due to a temperature rise at chip junction can be ignored.
Note2) Unless otherwise specified, VI=3.5V, IO=20mA, CO=10µF
■ Electrical Characteristics (Ta=25˚C)
· AN8003/AN8003M (3V Type)
Parameter
Symbol
Output voltage
VO
Line regulation
REGIN
Load regulation
REGL
Minimum I/O voltage difference
Bias current
VDIF (min.)
Ibias
Condition
Tj=25˚C
typ
max
Unit
3
3.12
V
VI=3.5 to 9V, Tj=25˚C
3
50
mV
IO=1 to 40mA, Tj=25˚C
9
25
mV
2.88
15
30
mV
VI=2.9V, IO=20mA, Tj=25˚C
0.07
0.2
V
VI=2.9V, IO=50mA, Tj=25˚C
0.12
0.3
V
0.6
1
mA
IO=1 to 50mA, Tj=25˚C
IO=0mA, Tj=25˚C
Ripple rejection ratio
RR
VI=4 to 6V, f=120Hz
Output noise voltage
Vno
f=10Hz to 100kHz
∆VO/Ta
Tj=–30 to+125˚C
Output voltage temperature coefficient
min
58
70
dB
70
µV
0.15
mV/˚C
Note1) The specified condition Tj=25˚C means that the test should be conducted with each test time reduced (within 10ms) so that
the drift in characteristic value due to a temperature rise at chip junction can be ignored.
Note2) Unless otherwise specified, VI=4V, IO=20mA, CO=10µF
· AN8035/AN8035M (3.5V Type)
Parameter
Symbol
Output voltage
VO
Line regulation
REGIN
Load regulation
REGL
Minimum I/O voltage difference
Bias current
VDIF (min.)
Ibias
Condition
Tj=25˚C
min
typ
max
Unit
3.5
3.64
V
VI=4 to 9.5V, Tj=25˚C
3.5
50
mV
IO=1 to 40mA, Tj=25˚C
10
30
mV
3.36
20
40
mV
VI=3.4V, IO=20mA, Tj=25˚C
0.07
0.2
V
VI=3.4V, IO=50mA, Tj=25˚C
0.12
0.3
V
0.6
1
mA
IO=1 to 50mA, Tj=25˚C
IO=0mA, Tj=25˚C
Ripple rejection ratio
RR
VI=4.5 to 6.5V, f=120Hz
69
dB
Output noise voltage
Vno
f=10Hz to 100kHz
75
µV
∆VO/Ta
Tj=–30 to+125˚C
0.2
mV/˚C
Output voltage temperature coefficient
57
Note1) The specified condition Tj=25˚C means that the test should be conducted with each test time reduced (within 10ms) so that
the drift in characteristic value due to a temperature rise at chip junction can be ignored.
Note2) Unless otherwise specified, VI=4.5V, IO=20mA, CO=10µF
· AN8004/AN8004M (4V Type)
Parameter
Symbol
Output voltage
VO
Line regulation
REGIN
Load regulation
Minimum I/O voltage difference
Bias current
REGL
VDIF (min.)
Ibias
Condition
Tj=25˚C
min
typ
max
Unit
4
4.16
V
VI=4.5 to 10V, Tj=25˚C
3.5
50
mV
IO=1 to 40mA, Tj=25˚C
10
30
mV
IO=1 to 50mA, Tj=25˚C
20
40
mV
VI=3.8V, IO=20mA, Tj=25˚C
0.07
0.2
V
VI=3.8V, IO=50mA, Tj=25˚C
0.12
0.3
V
0.6
1
mA
3.84
IO=0mA, Tj=25˚C
Ripple rejection ratio
RR
VI=5 to 7V, f=120Hz
67
dB
Output noise voltage
Vno
f=10Hz to 100kHz
80
µV
∆VO/Ta
Tj=–30 to+125˚C
0.2
mV/˚C
Output voltage temperature coefficient
56
Note1) The specified condition Tj=25˚C means that the test should be conducted with each test time reduced (within 10ms) so that
the drift in characteristic value due to a temperature rise at chip junction can be ignored.
Note2) Unless otherwise specified, VI=5V, IO=20mA, CO=10µF
■ Electrical Characteristics (Ta=25˚C)
· AN8045/AN8045M (4.5V Type)
Parameter
Symbol
Output voltage
VO
Line regulation
REGIN
Load regulation
REGL
Minimum I/O voltage difference
Bias current
VDIF (min.)
Ibias
Condition
Tj=25˚C
typ
max
Unit
4.5
4.68
V
VI=5 to 10.5V, Tj=25˚C
4
50
mV
IO=1 to 40mA, Tj=25˚C
11
35
mV
4.32
23
45
mV
VI=4.3V, IO=20mA, Tj=25˚C
0.07
0.2
V
VI=4.3V, IO=50mA, Tj=25˚C
0.12
0.3
V
0.7
1
mA
IO=1 to 50mA, Tj=25˚C
IO=0mA, Tj=25˚C
Ripple rejection ratio
RR
VI=5.5 to 7.5V, f=120Hz
Output noise voltage
Vno
f=10Hz to 100kHz
∆VO/Ta
Tj=–30 to+125˚C
Output voltage temperature coefficient
min
54
66
dB
85
µV
0.23
mV/˚C
Note1) The specified condition Tj=25˚C means that the test should be conducted with each test time reduced (within 10ms) so that
the drift in characteristic value due to a temperature rise at chip junction can be ignored.
Note2) Unless otherwise specified, VI=5.5V, IO=20mA, CO=10µF
· AN8005/AN8005M (5V Type)
Parameter
Symbol
Output voltage
VO
Line regulation
REGIN
Load regulation
REGL
Minimum I/O voltage difference
Bias current
VDIF (min.)
Ibias
Condition
Tj=25˚C
typ
max
Unit
5
5.2
V
VI=5.5 to 11V, Tj=25˚C
4.5
50
mV
IO=1 to 40mA, Tj=25˚C
12
40
mV
IO=1 to 50mA, Tj=25˚C
25
50
mV
VI=4.8V, IO=20mA, Tj=25˚C
0.07
0.2
V
VI=4.8V, IO=50mA, Tj=25˚C
0.12
0.3
V
0.7
1
mA
4.8
IO=0mA, Tj=25˚C
Ripple rejection ratio
RR
VI=6 to 8V, f=120Hz
Output noise voltage
Vno
f=10Hz to 100kHz
∆VO/Ta
Tj=–30 to+125˚C
Output voltage temperature coefficient
min
52
64
dB
95
µV
0.25
mV/˚C
Note1) The specified condition Tj=25˚C means that the test should be conducted with each test time reduced (within 10ms) so that
the drift in characteristic value due to a temperature rise at chip junction can be ignored.
Note2) Unless otherwise specified, VI=6V, IO=20mA, CO=10µF
· AN8006/AN8006M (6V Type)
Parameter
Symbol
Output voltage
VO
Line regulation
REGIN
Load regulation
Minimum I/O voltage difference
REGL
VDIF (min.)
Condition
Tj=25˚C
typ
max
Unit
6
6.24
V
VI=6.5 to 12V, Tj=25˚C
5.5
60
mV
IO=1 to 40mA, Tj=25˚C
13
45
mV
IO=1 to 50mA, Tj=25˚C
28
55
mV
VI=5.8V, IO=20mA, Tj=25˚C
0.07
0.2
V
VI=5.8V, IO=50mA, Tj=25˚C
0.13
0.3
V
0.7
1.2
mA
Bias current
Ibias
IO=0mA, Tj=25˚C
Ripple rejection ratio
RR
VI=7 to 9V, f=120Hz
Output noise voltage
Vno
∆VO/Ta
Output voltage temperature coefficient
min
5.76
63
dB
f=10Hz to 100kHz
105
µV
Tj=–30 to+125˚C
0.3
mV/˚C
51
Note1) The specified condition Tj=25˚C means that the test should be conducted with each test time reduced (within 10ms) so that
the drift in characteristic value due to a temperature rise at chip junction can be ignored.
Note2) Unless otherwise specified, VI=7V, IO=20mA, CO=10µF
■ Electrical Characteristics (Ta=25˚C)
· AN8007/AN8007M (7V Type)
Parameter
Symbol
Output voltage
VO
Line regulation
REGIN
Load regulation
REGL
Minimum I/O voltage difference
Bias current
VDIF (min.)
Ibias
Condition
Tj=25˚C
min
typ
max
Unit
7
7.28
V
VI=7.5 to 13V, Tj=25˚C
6.5
70
mV
IO=1 to 40mA, Tj=25˚C
14
50
mV
6.72
31
60
mV
VI=6.8V, IO=20mA, Tj=25˚C
0.07
0.2
V
VI=6.8V, IO=50mA, Tj=25˚C
0.13
0.3
V
0.7
1.3
mA
IO=1 to 50mA, Tj=25˚C
IO=0mA, Tj=25˚C
Ripple rejection ratio
RR
VI=8 to 10V, f=120Hz
62
dB
Output noise voltage
Vno
f=10Hz to 100kHz
120
µV
∆VO/Ta
Tj=–30 to+125˚C
0.35
mV/˚C
Output voltage temperature coefficient
50
Note1) The specified condition Tj=25˚C means that the test should be conducted with each test time reduced (within 10ms) so that
the drift in characteristic value due to a temperature rise at chip junction can be ignored.
Note2) Unless otherwise specified, VI=8V, IO=20mA, CO=10µF
· AN8008/AN8008M (8V Type)
Parameter
Symbol
Output voltage
VO
Line regulation
REGIN
Load regulation
REGL
Minimum I/O voltage difference
Bias current
VDIF (min.)
Ibias
Condition
Tj=25˚C
min
typ
max
Unit
8
8.32
V
VI=8.5 to 14V, Tj=25˚C
7.5
80
mV
IO=1 to 40mA, Tj=25˚C
15
55
mV
7.68
34
65
mV
VI=7.8V, IO=20mA, Tj=25˚C
0.07
0.2
V
VI=7.8V, IO=50mA, Tj=25˚C
0.14
0.3
V
0.7
1.3
mA
IO=1 to 50mA, Tj=25˚C
IO=0mA, Tj=25˚C
Ripple rejection ratio
RR
VI=9 to 11V, f=120Hz
61
dB
Output noise voltage
Vno
f=10Hz to 100kHz
135
µV
∆VO/Ta
Tj=–30 to+125˚C
0.4
mV/˚C
Output voltage temperature coefficient
49
Note1) The specified condition Tj=25˚C means that the test should be conducted with each test time reduced (within 10ms) so that
the drift in characteristic value due to a temperature rise at chip junction can be ignored.
Note2) Unless otherwise specified, VI=9V, IO=20mA, CO=10µF
· AN8085/AN8085M (8.5V Type)
Parameter
Symbol
Output voltage
VO
Line regulation
REGIN
Load regulation
REGL
Minimum I/O voltage difference
Bias current
VDIF (min.)
Ibias
Condition
min
typ
8.16
8.50
8.84
V
VI=9 to 14.5V, Tj=25˚C
8.3
90
mV
IO=1 to 40mA, Tj=25˚C
16
60
mV
Tj=25˚C
max
Unit
36
70
mV
VI=8.3V, IO=20mA, Tj=25˚C
0.07
0.2
V
VI=8.3V, IO=50mA, Tj=25˚C
0.14
0.3
V
0.8
1.4
mA
IO=1 to 50mA, Tj=25˚C
IO=0mA, Tj=25˚C
Ripple rejection ratio
RR
VI=9.5 to 11.5V, f=120Hz
60
dB
Output noise voltage
Vno
f=10Hz to 100kHz
140
µV
∆VO/Ta
Tj=–30 to+125˚C
0.43
mV/˚C
Output voltage temperature coefficient
48
Note1) The specified condition Tj=25˚C means that the test should be conducted with each test time reduced (within 10ms) so that
the drift in characteristic value due to a temperature rise at chip junction can be ignored.
Note2) Unless otherwise specified, VI=9.5V, IO=20mA, CO=10µF
■ Electrical Characteristics (Ta=25˚C)
· AN8009/AN8009M (9V Type)
Parameter
Symbol
Output voltage
VO
Line regulation
REGIN
Load regulation
REGL
Minimum I/O voltage difference
VDIF (min.)
Bias current
Ibias
Condition
min
Tj=25˚C
typ
max
Unit
9
9.36
V
VI=9.5 to 15V, Tj=25˚C
9
100
mV
IO=1 to 40mA, Tj=25˚C
17
70
mV
8.64
37
75
mV
VI=8.8V, IO=20mA, Tj=25˚C
0.07
0.2
V
VI=8.8V, IO=50mA, Tj=25˚C
0.14
0.3
V
0.8
1.4
mA
IO=1 to 50mA, Tj=25˚C
IO=0mA, Tj=25˚C
Ripple rejection ratio
RR
VI=10 to 12V, f=120Hz
59
dB
Output noise voltage
Vno
f=10Hz to 100kHz
150
µV
∆VO/Ta
Tj=–30 to+125˚C
0.45
mV/˚C
Output voltage temperature coefficient
47
Note1) The specified condition Tj=25˚C means that the test should be conducted with each test time reduced (within 10ms) so that
the drift in characteristic value due to a temperature rise at chip junction can be ignored.
Note2) Unless otherwise specified, VI=10V, IO=20mA, CO=10µF
· AN8010/AN8010M (10V Type)
Parameter
Symbol
Output voltage
VO
Line regulation
REGIN
Load regulation
REGL
Minimum I/O voltage difference
VDIF (min.)
Bias current
Ibias
Condition
min
Tj=25˚C
typ
max
Unit
10
10.4
V
VI=10.5 to 16V, Tj=25˚C
10
100
mV
IO=1 to 40mA, Tj=25˚C
18
75
mV
IO=1 to 50mA, Tj=25˚C
40
85
mV
VI=9.8V, IO=20mA, Tj=25˚C
0.07
0.2
V
VI=9.8V, IO=50mA, Tj=25˚C
0.14
0.3
V
0.8
1.4
mA
9.6
IO=0mA, Tj=25˚C
Ripple rejection ratio
RR
VI=11 to 13V, f=120Hz
58
dB
Output noise voltage
Vno
f=10Hz to 100kHz
165
µV
∆VO/Ta
Tj=–30 to+125˚C
0.5
mV/˚C
Output voltage temperature coefficient
46
Note1) The specified condition Tj=25˚C means that the test should be conducted with each test time reduced (within 10ms) so that
the drift in characteristic value due to a temperature rise at chip junction can be ignored.
Note2) Unless otherwise specified, VI=11V, IO=20mA, CO=10µF
■ Application Circuit
Vout
Vin
AN8000
AN8000M
+
0.33µF
10µF
–
The AN8000/AN8000M series has IC internal gain increased in order to improve
performance. When the power line on the output side is long, use a capacitor of
10µF.
For the capacitor on the output side, attach it as close to the IC as possible.
When using at a low temperature, it is recommended to use the capacitors with
low internal impedance (for example, tantalum capacitor) for output capacitors.
■ Characteristic Curve
PD –Ta (AN8000 Series)
PD –Ta (AN8000M Series)
800
Power Dissipation PD (mW)
Power Dissipation PD (mW)
800
700
600
500
400
300
200
100
0
700
(
600
400
300
200
100
20
40
60
80
100
120
140
160
0
20
40
Ambient Temperature Ta (˚C)
60
80
100
120
140
160
Ambient Temperature Ta (˚C)
RR– f
VO –VI
12
AN8005
80
Output Voltage VO (V)
Ripple Rejection Ratio RR (dB)
)
500
0
0
70
60
50
40
CO=10µF
IO=0mA
10
AN8010/M
8
6
AN8005/M
4
AN8002/M
2
30
0
50
100
300 500
1k
3k 5k
10k
30k 50k 100k
0
5
10
Frequency f (Hz)
VO – IO
20
VO –Ta
5.3
Output Voltage VO (V)
AN8005
VI=6V
CO=10µF
5.2
5.1
5.0
4.9
4.8
4.7
15
Input Voltage VI (V)
5.3
Output Voltage VO (V)
Mounting onto PCB
20 × 20 × 7mm
Glass Epoxy PCB,
Copper foil 1cm2 or more
0
10
20
30
40
50
60
70
Output Current VO (mA)
80
90
100
AN8005
VI=6V
CO=10µF
IO=0mA
5.2
5.1
5.0
4.9
4.8
4.7
–40
–20
0
20
40
60
80
100
120
Ambient Temperature Ta (˚C)
140
160
Similar pages