Panasonic AN8085M 3-pin, positive output, low dropout voltage regulator (50 ma type) Datasheet

Voltage Regulators
AN80xx/AN80xxM Series
3-pin, positive output, low dropout voltage regulator (50 mA type)
■ Overview
AN80xx series
Unit: mm
(1.0)
4.0±0.2
5.1±0.2
5.0±0.2
The AN80xx series and the AN80xxM series are 3pin, low dropout, fixed positive output type monolithic
voltage regulators. Since their power consumption can
be minimized, they are suitable for battery-used power
supply and reference voltage. 13 types of output voltage
are available; 2V, 2.5V, 3V, 3.5V (SSIP003-P-0000 only),
4V, 4.5V, 5V, 6V, 7V, 8V, 8.5V, 9V, and 10V.
(1.0)
2.3±0.2
13.5±0.5
0.6±0.15
■ Features
• Input/output voltage difference: 0.3V max.
• Output current of up to 50mA
• Low bias current: 0.6mA typ.
• Output voltage: 2V, 2.5V, 3V, 3.5V (SSIP003-P-0000
only), 4V, 4.5V, 5V, 6V, 7V, 8V, 8.5V, 9V, and 10V
• Built-in overcurrent protection circuit
0.43+0.1
–0.05
0.43+0.1
–0.05
2.54
1: Input
2: Output
3: GND
2 3 1
SSIP003-P-0000
AN80xxM series
Unit: mm
1.6 max.
4.6 max.
0.58 max.
0.48 max.
1.5
1.5
4.25 max.
0.8 min.
2.6 max.
2.6 typ.
1.8 max.
0.44 max.
3.0
3
2
1
1: Output
2: GND
3: Input
HSIP003-P-0000B
Note) The packages (SSIP003-P-0000 and HSIP003P-0000B) of this product will be changed to
lead-free type (SSIP003-P-0000S and
HSIP003-P-0000Q). See the new package dimensions section later of this datasheet.
■ Block Diagram (AN80xxM series)
Starter
Voltage
Reference
+
Error
Amp.
−
R2
R1
Current
Limiter
3
VI
2
(1)
(3)
CIN
1
−
+ (2)
VO
R1 = 5kΩ
CIN = 0.33µF
COUT = 10µF
COUT
Note) The number in ( ) shows the pin number for the AN80xx series.
Publication date: December 2001
SFF00007CEB
1
AN80xx/AN80xxM Series
■ Absolute Maximum Ratings at Ta = 25°C
Symbol
Rating
Supply voltage
Parameter
VI
20
Supply current
ICC
Power dissipation
PD
100
650 *
Operating ambient temperature
Topr
−30 to +80
Storage temperature
*
AN80xx series
V
mA
mW
°C
−55 to +150
Tstg
AN80xxM series
Unit
°C
−55 to +125
AN80xxM series is mounted on standard board (glass epoxy: 20mm × 20mm × t1.7mm with Cu foil of 1cm2 or more).
■ Electrical Characteristics at Ta = 25°C
• AN8002, AN8002M (2V type)
Parameter
Symbol
Output voltage
VO
Line regulation
REGIN
Load regulation
REGL
Minimum input/output voltage difference
VDIF(min)
Conditions
Tj = 25°C
1.92
Typ
Max
Unit
2
2.08
V
2
40
mV
IO = 1 to 40mA, Tj = 25°C
7
20
mV
IO = 1 to 50mA, Tj = 25°C
10
25
mV
VI = 1.9V, IO = 20mA, Tj = 25°C
0.06
0.2
V
VI = 1.9V, IO = 50mA, Tj = 25°C
0.12
0.3
V
0.6
1
mA
VI = 2.5 to 8V, Tj = 25°C
Bias current
IBias
IO = 0mA, Tj = 25°C
Ripple rejection ratio
RR
VI = 3 to 5V, f = 120Hz
Output noise voltage
Vno
∆VO/Ta
Output voltage temperature coefficient
Min
62
74
dB
f = 10Hz to 100kHz
60
µV
Tj = −30 to +125°C
0.1
mV/°C
Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the
characteristic value drift due to the chip junction temperature rise can be ignored.
Note 2) Unless otherwise specified, VI = 3V, IO = 20mA and CO = 10µF.
• AN8025, AN8025M (2.5V type)
Parameter
Symbol
Output voltage
VO
Line regulation
REGIN
Load regulation
REGL
Minimum input/output voltage difference
Bias current
VDIF(min)
IBias
Conditions
Tj = 25°C
Min
Typ
Max
2.4
2.5
2.6
V
2.5
50
mV
VI = 3 to 8.5V, Tj = 25°C
Unit
IO = 1 to 40mA, Tj = 25°C
8
20
mV
IO = 1 to 50mA, Tj = 25°C
12.5
25
mV
VI = 2.4V, IO = 20mA, Tj = 25°C
0.07
0.2
V
VI = 2.4V, IO = 50mA, Tj = 25°C
0.12
0.3
V
0.6
1
mA
IO = 0mA, Tj = 25°C
Ripple rejection ratio
RR
VI = 3.5 to 5.5V, f = 120Hz
72
dB
Output noise voltage
Vno
f = 10Hz to 100kHz
65
µV
∆VO/Ta
Tj = −30 to +125°C
0.13
mV/°C
Output voltage temperature coefficient
60
Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the
characteristic value drift due to the chip junction temperature rise can be ignored.
Note 2) Unless otherwise specified, VI = 3.5V, IO = 20mA and CO = 10µF.
2
SFF00007CEB
AN80xx/AN80xxM Series
■ Electrical Characteristics at Ta = 25°C (continued)
• AN8003, AN8003M (3V type)
Parameter
Symbol
Output voltage
VO
Line regulation
REGIN
Load regulation
REGL
Minimum input/output voltage difference
VDIF(min)
Conditions
Tj = 25°C
Unit
Min
Typ
Max
2.88
3
3.12
V
3
50
mV
VI = 3.5 to 9V, Tj = 25°C
IO = 1 to 40mA, Tj = 25°C
9
25
mV
IO = 1 to 50mA, Tj = 25°C
15
30
mV
VI = 2.9V, IO = 20mA, Tj = 25°C
0.07
0.2
V
VI = 2.9V, IO = 50mA, Tj = 25°C
0.12
0.3
V
0.6
1
mA
Bias current
IBias
IO = 0mA, Tj = 25°C
Ripple rejection ratio
RR
VI = 4 to 6V, f = 120Hz
Vno
f = 10Hz to 100kHz
70
µV
∆VO/Ta
Tj = −30 to +125°C
0.15
mV/°C
Output noise voltage
Output voltage temperature coefficient
58
70
dB
Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the
characteristic value drift due to the chip junction temperature rise can be ignored.
Note 2) Unless otherwise specified, VI = 4V, IO = 20mA and CO = 10µF.
• AN8035(3.5V type) yp
Parameter
Symbol
Output voltage
VO
Line regulation
REGIN
Load regulation
REGL
Minimum input/output voltage difference
Bias current
VDIF(min)
IBias
Conditions
Unit
Min
Typ
Max
3.36
3.5
3.64
V
VI = 4 to 9.5V, Tj = 25°C
3.5
50
mV
IO = 1 to 40mA, Tj = 25°C
10
30
mV
Tj = 25°C
IO = 1 to 50mA, Tj = 25°C
20
40
mV
VI = 3.4V, IO = 20mA, Tj = 25°C
0.07
0.2
V
VI = 3.4V, IO = 50mA, Tj = 25°C
0.12
0.3
V
0.6
1
mA
IO = 0mA, Tj = 25°C
Ripple rejection ratio
RR
VI = 4.5 to 6.5V, f = 120Hz
69
dB
Output noise voltage
Vno
f = 10Hz to 100kHz
75
µV
∆VO/Ta
Tj = −30 to +125°C
0.2
mV/°C
Output voltage temperature coefficient
57
Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the
characteristic value drift due to the chip junction temperature rise can be ignored.
Note 2) Unless otherwise specified, VI = 4.5V, IO = 20mA and CO = 10µF.
• AN8004, AN8004M (4V type)
Parameter
Symbol
Output voltage
VO
Line regulation
REGIN
Load regulation
REGL
Minimum input/output voltage difference
VDIF(min)
Conditions
Typ
Max
4
4.16
V
VI = 4.5 to 10V, Tj = 25°C
3.5
50
mV
IO = 1 to 40mA, Tj = 25°C
10
30
mV
IO = 1 to 50mA, Tj = 25°C
20
40
mV
VI = 3.8V, IO = 20mA, Tj = 25°C
0.07
0.2
V
VI = 3.8V, IO = 50mA, Tj = 25°C
0.12
0.3
V
0.6
1
mA
Bias current
IBias
IO = 0mA, Tj = 25°C
Ripple rejection ratio
RR
VI = 5 to 7V, f = 120Hz
Output noise voltage
Vno
∆VO/Ta
Output voltage temperature coefficient
Unit
Min
3.84
Tj = 25°C
67
dB
f = 10Hz to 100kHz
80
µV
Tj = −30 to +125°C
0.2
mV/°C
56
Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the
characteristic value drift due to the chip junction temperature rise can be ignored.
Note 2) Unless otherwise specified, VI = 5V, IO = 20mA and CO = 10µF.
SFF00007CEB
3
AN80xx/AN80xxM Series
■ Electrical Characteristics at Ta = 25°C (continued)
• AN8045, AN8045M (4.5V type)
Parameter
Symbol
Output voltage
VO
Line regulation
REGIN
Load regulation
REGL
Minimum input/output voltage difference
VDIF(min)
Conditions
Tj = 25°C
Min
Typ
Max
4.32
Unit
4.5
4.68
V
VI = 5 to 10.5V, Tj = 25°C
4
50
mV
IO = 1 to 40mA, Tj = 25°C
11
35
mV
IO = 1 to 50mA, Tj = 25°C
23
45
mV
VI = 4.3V, IO = 20mA, Tj = 25°C
0.07
0.2
V
VI = 4.3V, IO = 50mA, Tj = 25°C
0.12
0.3
V
0.7
1
mA
Bias current
IBias
IO = 0mA, Tj = 25°C
Ripple rejection ratio
RR
VI = 5.5 to 7.5V, f = 120Hz
Vno
f = 10Hz to 100kHz
85
µV
∆VO/Ta
Tj = −30 to +125°C
0.23
mV/°C
Output noise voltage
Output voltage temperature coefficient
54
66
dB
Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the
characteristic value drift due to the chip junction temperature rise can be ignored.
Note 2) Unless otherwise specified, VI = 5.5V, IO = 20mA and CO = 10µF.
• AN8005, AN8005M (5V type)
Parameter
Symbol
Output voltage
VO
Line regulation
REGIN
Load regulation
REGL
Minimum input/output voltage difference
Bias current
VDIF(min)
IBias
Conditions
Unit
Min
Typ
Max
4.8
5
5.2
V
VI = 5.5 to 11V, Tj = 25°C
4.5
50
mV
IO = 1 to 40mA, Tj = 25°C
12
40
mV
Tj = 25°C
IO = 1 to 50mA, Tj = 25°C
25
50
mV
VI = 4.8V, IO = 20mA, Tj = 25°C
0.07
0.2
V
VI = 4.8V, IO = 50mA, Tj = 25°C
0.12
0.3
V
0.7
1
mA
IO = 0mA, Tj = 25°C
Ripple rejection ratio
RR
VI = 6 to 8V, f = 120Hz
64
dB
Output noise voltage
Vno
f = 10Hz to 100kHz
95
µV
∆VO/Ta
Tj = −30 to +125°C
0.25
mV/°C
Output voltage temperature coefficient
52
Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the
characteristic value drift due to the chip junction temperature rise can be ignored.
Note 2) Unless otherwise specified, VI = 6V, IO = 20mA and CO = 10µF.
• AN8006, AN8006M (6V type)
Parameter
Symbol
Output voltage
VO
Line regulation
REGIN
Load regulation
REGL
Minimum input/output voltage difference
Bias current
VDIF(min)
IBias
Conditions
Tj = 25°C
Min
5.76
Typ
Max
Unit
6
6.24
V
VI = 6.5 to 12V, Tj = 25°C
5.5
60
mV
IO = 1 to 40mA, Tj = 25°C
13
45
mV
IO = 1 to 50mA, Tj = 25°C
28
55
mV
VI = 5.8V, IO = 20mA, Tj = 25°C
0.07
0.2
V
VI = 5.8V, IO = 50mA, Tj = 25°C
0.13
0.3
V
0.7
1.2
mA
IO = 0mA, Tj = 25°C
Ripple rejection ratio
RR
VI = 7 to 9V, f = 120Hz
63
dB
Output noise voltage
Vno
f = 10Hz to 100kHz
105
µV
∆VO/Ta
Tj = −30 to +125°C
0.3
mV/°C
Output voltage temperature coefficient
51
Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the
characteristic value drift due to the chip junction temperature rise can be ignored.
Note 2) Unless otherwise specified, VI = 7V, IO = 20mA and CO = 10µF.
4
SFF00007CEB
AN80xx/AN80xxM Series
■ Electrical Characteristics at Ta = 25°C (continued)
• AN8007, AN8007M (7V type)
Parameter
Symbol
Output voltage
VO
Line regulation
REGIN
Load regulation
REGL
Minimum input/output voltage difference
VDIF(min)
Conditions
Min
Typ
Max
6.72
7
7.28
V
VI = 7.5 to 13V, Tj = 25°C
6.5
70
mV
IO = 1 to 40mA, Tj = 25°C
14
50
mV
IO = 1 to 50mA, Tj = 25°C
31
60
mV
VI = 6.8V, IO = 20mA, Tj = 25°C
0.07
0.2
V
VI = 6.8V, IO = 50mA, Tj = 25°C
0.13
0.3
V
0.7
1.3
mA
Tj = 25°C
Unit
Bias current
IBias
IO = 0mA, Tj = 25°C
Ripple rejection ratio
RR
VI = 8 to 10V, f = 120Hz
Vno
f = 10Hz to 100kHz
120
µV
∆VO/Ta
Tj = −30 to +125°C
0.35
mV/°C
Output noise voltage
Output voltage temperature coefficient
50
62
dB
Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the
characteristic value drift due to the chip junction temperature rise can be ignored.
Note 2) Unless otherwise specified, VI = 8V, IO = 20mA and CO = 10µF.
• AN8008, AN8008M
yp(8V type)
Parameter
Symbol
Output voltage
VO
Line regulation
REGIN
Load regulation
REGL
Minimum input/output voltage difference
Bias current
VDIF(min)
IBias
Conditions
Unit
Min
Typ
Max
7.68
8
8.32
V
VI = 8.5 to 14V, Tj = 25°C
7.5
80
mV
IO = 1 to 40mA, Tj = 25°C
15
55
mV
Tj = 25°C
IO = 1 to 50mA, Tj = 25°C
34
65
mV
VI = 7.8V, IO = 20mA, Tj = 25°C
0.07
0.2
V
VI = 7.8V, IO = 50mA, Tj = 25°C
0.14
0.3
V
0.7
1.3
mA
IO = 0mA, Tj = 25°C
Ripple rejection ratio
RR
VI = 9 to 11V, f = 120Hz
61
dB
Output noise voltage
Vno
f = 10Hz to 100kHz
135
µV
∆VO/Ta
Tj = −30 to +125°C
0.4
mV/°C
Output voltage temperature coefficient
49
Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the
characteristic value drift due to the chip junction temperature rise can be ignored.
Note 2) Unless otherwise specified, VI = 9V, IO = 20mA and CO = 10µF.
• AN8085, AN8085M yp
(8.5V type)
Parameter
Symbol
Output voltage
VO
Line regulation
REGIN
Load regulation
REGL
Minimum input/output voltage difference
VDIF(min)
Conditions
Unit
Min
Typ
Max
8.16
8.50
8.84
V
VI = 9 to 14.5V, Tj = 25°C
8.3
90
mV
IO = 1 to 40mA, Tj = 25°C
16
60
mV
IO = 1 to 50mA, Tj = 25°C
36
70
mV
VI = 8.3V, IO = 20mA, Tj = 25°C
0.07
0.2
V
VI = 8.3V, IO = 50mA, Tj = 25°C
0.14
0.3
V
0.8
1.4
mA
Tj = 25°C
Bias current
IBias
IO = 0mA, Tj = 25°C
Ripple rejection ratio
RR
VI = 9.5 to 11.5V, f = 120Hz
Vno
f = 10Hz to 100kHz
140
µV
∆VO/Ta
Tj = −30 to +125°C
0.43
mV/°C
Output noise voltage
Output voltage temperature coefficient
48
60
dB
Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the
characteristic value drift due to the chip junction temperature rise can be ignored.
Note 2) Unless otherwise specified, VI = 9.5V, IO = 20mA and CO = 10µF.
SFF00007CEB
5
AN80xx/AN80xxM Series
■ Electrical Characteristics at Ta = 25°C (continued)
• AN8009, AN8009M (9V type)
Parameter
Symbol
Output voltage
VO
Line regulation
REGIN
Load regulation
REGL
Minimum input/output voltage difference
VDIF(min)
Conditions
Unit
Min
Typ
Max
8.64
9
9.36
V
VI = 9.5 to 15V, Tj = 25°C
9
100
mV
IO = 1 to 40mA, Tj = 25°C
17
70
mV
IO = 1 to 50mA, Tj = 25°C
37
75
mV
VI = 8.8V, IO = 20mA, Tj = 25°C
0.07
0.2
V
VI = 8.8V, IO = 50mA, Tj = 25°C
0.14
0.3
V
0.8
1.4
mA
Tj = 25°C
Bias current
IBias
IO = 0mA, Tj = 25°C
Ripple rejection ratio
RR
VI = 10 to 12V, f = 120Hz
Vno
f = 10Hz to 100kHz
150
µV
∆VO/Ta
Tj = −30 to +125°C
0.45
mV/°C
Output noise voltage
Output voltage temperature coefficient
47
59
dB
Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the
characteristic value drift due to the chip junction temperature rise can be ignored.
Note 2) Unless otherwise specified, VI = 10V, IO = 20mA and CO = 10µF.
• AN8010, AN8010M (10V type)
Parameter
Symbol
Output voltage
VO
Line regulation
REGIN
Load regulation
REGL
Minimum input/output voltage difference
Bias current
VDIF(min)
IBias
Conditions
Unit
Min
Typ
Max
9.6
10
10.4
V
VI = 10.5 to 16V, Tj = 25°C
10
100
mV
IO = 1 to 40mA, Tj = 25°C
18
75
mV
Tj = 25°C
IO = 1 to 50mA, Tj = 25°C
40
85
mV
VI = 9.8V, IO = 20mA, Tj = 25°C
0.07
0.2
V
VI = 9.8V, IO = 50mA, Tj = 25°C
0.14
0.3
V
0.8
1.4
mA
IO = 0mA, Tj = 25°C
Ripple rejection ratio
RR
VI = 11 to 13V, f = 120Hz
58
dB
Output noise voltage
Vno
f = 10Hz to 100kHz
165
µV
∆VO/Ta
Tj = −30 to +125°C
0.5
mV/°C
Output voltage temperature coefficient
46
Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the
characteristic value drift due to the chip junction temperature rise can be ignored.
Note 2) Unless otherwise specified, VI = 11V, IO = 20mA and CO = 10µF.
6
SFF00007CEB
AN80xx/AN80xxM Series
■ Main Characteristics
PD  Ta (AN80xx series)
PD  Ta (AN80xxM series)
800
Power dissipation PD (mW)
Power dissipation PD (mW)
800
700
600
500
400
300
200
100
0
0
20
40
60
80
100
120
140
600
500
400
300
200
100
0
160
Mounted on standard board
glass epoxy: 20 × 20 × t1.7mm3
with Cu foil of 1cm2 or more
700
0
20
40
Ambient temperature Ta (°C)
60
RR  f
100
120
140
160
VO  V I
12
AN8005
80
Output voltage VO (V)
Ripple rejection ratio RR (dB)
80
Ambient temperature Ta (°C)
70
60
50
40
CO = 10µF
IO = 0mA
10
AN8010/M
8
6
AN8005/M
4
AN8002/M
2
30
0
50
100
300 500
1k
3k 5k
10k
30k 50k 100k
0
5
10
Frequency f (Hz)
VO  I O
5.3
AN8005
VI = 6V
CO = 10µF
5.2
Output voltage VO (V)
Output voltage VO (V)
20
VO  T a
5.3
5.1
5.0
4.9
4.8
4.7
15
Input voltage VI (V)
0
10
20
30
40
50
60
70
80
90
100
AN8005
VI = 6V
CO = 10µF
IO = 0mA
5.2
5.1
5.0
4.9
4.8
4.7
−40
Output current IO (mA)
−20
0
20
40
60
80
100
120
140
160
Ambient temperature Ta (°C)
SFF00007CEB
7
AN80xx/AN80xxM Series
■ Application Circuit Example
VI
VO
AN80xx
AN80xxM
Series
+
0.33µF
−
10µF
• AN80xx and AN80xxM series have their internal gain increased in order to improve performance. When the power
line on the output side is long, use a capacitor of 10µF.
Also, the capacitor on the output side should be attached as close to the IC as possible.
• When using at a low temperature, it is recommended to use the capacitors with low internal impedance (for example,
tantalum capacitor) for output capacitors.
■ New Package Dimensions (Unit: mm)
• SSIP003-P-0000S (Lead-free package)
4.00±0.20
(1.00)
(1.00)
5.00±0.20
5.00±0.20
0.60±0.15
1
1.27
2.30±0.20
0.40+0.10
-0.05
13.30±0.50
0.40±0.10
3
1.27
• HSIP003-P-0000Q (Lead-free package)
1.00+0.10
-0.20
2.50±0.10
4.00+0.25
-0.20
4.50±0.10
1.55±0.20
1
0.40+0.10
-0.05
1.50
3
0.40+0.10
-0.05
0.50+0.10
-0.05
(0.75)
1.50±0.10
3.00
0.15 M
8
2.65±0.10
(0.40)
0.10
SFF00007CEB
0.42+0.10
-0.05
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and semiconductors described in this material
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Please read the following notes before using the datasheets
A. These materials are intended as a reference to assist customers with the selection of Panasonic
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2001 MAR
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