Rev 2: Nov 2004 AO3416, AO3416L ( Green Product ) N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3416 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. AO3416L ( Green Product ) is offered in a lead-free package. VDS (V) = 20V ID = 6.5 A RDS(ON) < 22mΩ (VGS = 4.5V) RDS(ON) < 26mΩ (VGS = 2.5V) RDS(ON) < 34mΩ (VGS = 1.8V) ESD Rating: 2000V HBM TO-236 (SOT-23) Top View D G G D S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Continuous Drain Current A Pulsed Drain Current ID IDM TA=70°C B Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. ±8 V 30 1.4 W 0.9 TJ, TSTG °C -55 to 150 Symbol t ≤ 10s Steady-State Steady-State A 5.2 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Units V 6.5 TA=25°C Power Dissipation A Maximum 20 RθJA RθJL Typ 65 85 43 Max 90 125 60 Units °C/W °C/W °C/W AO3416. AO3416L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VGS(th) Gate Threshold Voltage ID(ON) On state drain current RDS(ON) gFS VSD IS Static Drain-Source On-Resistance Conditions Min ID=250µA, VGS=0V VDS=16V, VGS=0V 20 0.4 30 VGS=4.5V, VDS=5V VGS=4.5V, ID=6.5A TJ=125°C VGS=2.5V, ID=5.5A VGS=1.8V, ID=5A DYNAMIC PARAMETERS Ciss Input Capacitance V A 18 25 21 22 30 26 26 29 0.76 34 mΩ mΩ 1 2.5 S V A mΩ 16 nC VGS=4.5V, VDS=10V, ID=6.5A 0.8 3.8 6.2 nC nC ns VGS=5V, VDS=10V, RL=1.5Ω, RGEN=3Ω 12.7 51.7 16 ns ns ns 17.7 ns nC VGS=0V, VDS=0V, f=1MHz Turn-Off DelayTime Turn-Off Fall Time 1 pF pF Ω VGS=0V, VDS=10V, f=1MHz Reverse Transfer Capacitance Gate resistance Turn-On Rise Time 0.6 187 146 1.5 Output Capacitance tD(off) tf trr Qrr µA µA pF Coss Gate Drain Charge Turn-On DelayTime µA 1160 Crss Rg Qgd tD(on) tr Units 1 5 ±1 ±10 VDS=0V, VGS=±4.5V VDS=0V, VGS=±8V VDS=VGS ID=250µA Max V TJ=55°C Forward Transconductance VDS=5V, ID=6.5A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Typ IF=6.5A, dI/dt=100A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=6.5A, dI/dt=100A/µs 6.7 A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO3416. AO3416L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 30 8V VGS=5V VGS =2V 15 20 ID(A) ID(A) VGS =1.5V 10 10 125°C 5 VGS =1V 25°C 0 0 0 1 2 3 4 5 0.0 VDS(Volts) 0.5 1.0 Figure 1: On-Regions Characteristics 50 2.0 2.5 1.6 Normalize ON-Resistance ID=6.5A 40 RDS(ON)(mΩ) 1.5 VGS(Volts) Figure 2: Transfer Characteristics VGS =1.8V 30 VGS =2.5V 20 VGS =4.5V VGS=1.8V 1.4 VGS=2.5V VGS=4.5V 1.2 1.0 10 0 5 10 15 20 0.8 0 ID(A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 60 1E+01 ID=6.5A 1E+00 125°C 1E-01 40 IS(A) RDS(ON)(mΩ) 50 125°C 30 1E-02 1E-03 20 1E-04 25°C 25°C 1E-05 10 0 2 4 6 VGS(Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 8 0.0 0.2 0.4 0.6 0.8 VSD(Volts) Figure 6: Body-Diode Characteristics 1.0 AO3416. AO3416L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2000 5 VDS=10V ID=6.5A 1600 Capacitance (pF) VGS(Volts) 4 3 2 Ciss 1200 800 Crss 1 400 0 0 0 5 10 15 Coss 0 20 TJ(Max)=150°C TA=25°C 15 20 40 RDS(ON) limited TJ(Max)=150°C TA=25°C 10µs 30 100µs Power (W) ID (Amps) 10.0 10 VDS(Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 5 1ms 0.1s 10ms 1.0 20 10 1s 10s DC 0 0.001 0.1 0.1 1 10 100 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) ZθJA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=90°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000