AO4440 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4440 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4440 is Pb-free (meets ROHS & Sony 259 specifications). AO4440L is a Green Product ordering option. AO4440 and AO4440L are electrically identical VDS (V) = 60V ID = 5A (VGS = 10V) RDS(ON) < 55mΩ (VGS = 10V) RDS(ON) < 75mΩ (VGS = 4.5V) D S S S G D D D D G S SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Continuous Drain Current A Pulsed Drain Current TA=70°C ±20 V 20 2.5 PD TA=70°C Junction and Storage Temperature Range W 1.6 TJ, TSTG -55 to 150 Symbol t ≤ 10s Steady-State Steady-State A 4 ID IDM B Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Units V 5 TA=25°C Power Dissipation Maximum 60 RθJA RθJL Typ 38 69 24 °C Max 50 80 30 Units °C/W °C/W °C/W AO4440 N Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V 60 TJ=55°C 5 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=10V, VDS=5V 20 RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=5A VGS=4.5V, ID=4A gFS Forward Transconductance IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current VDS=5V, ID=5A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge 2.3 µA 100 nA 3 V A 42 TJ=125°C Units V VDS=48V, VGS=0V VSD Max 1 VGS(th) IS Typ 55 75 54 75 11 0.78 450 mΩ mΩ S 1 V 4 A 540 pF VGS=0V, VDS=30V, f=1MHz 60 VGS=0V, VDS=0V, f=1MHz 1.65 2 Ω 8.5 10.5 nC 4.3 5.5 nC pF 25 VGS=10V, VDS=30V, ID=5A pF Qgs Gate Source Charge Qgd Gate Drain Charge 2.2 tD(on) Turn-On DelayTime 5.1 7 ns tr Turn-On Rise Time 2.6 4 ns 15.9 20 ns 2 3 ns 35 ns nC VGS=10V, VDS=30V, RL=6Ω, RGEN=3Ω 1.6 tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=5A, dI/dt=100A/µs 25.1 Qrr Body Diode Reverse Recovery Charge IF=5A, dI/dt=100A/µs 28.7 nC nC 2 A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. AO4440 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL 20 15 10.0V 5.0V VDS=5V 10 4.5V 125°C ID(A) ID (A) 15 10 4.0V 5 5 25°C VGS=3.5V 0 0 1 2 3 4 0 5 2 2.5 VDS (Volts) Fig 1: On-Region Characteristics 4 4.5 5 2 Normalized On-Resistance 90 80 RDS(ON) (mΩ) 3.5 VGS(Volts) Figure 2: Transfer Characteristics 100 VGS=4.5V 70 60 50 VGS=10V 40 30 20 1.8 VGS=10V ID=5A 1.6 VGS=4.5V ID=4A 1.4 1.2 1 0.8 0 5 10 15 20 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 160 ID=5A 140 1.0E+00 125°C 1.0E-01 100 IS (A) 120 RDS(ON) (mΩ) 3 125°C 1.0E-02 25°C 1.0E-03 80 1.0E-04 25°C 60 1.0E-05 40 0.0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 AO4440 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL 800 10 VDS=30V ID= 5A Capacitance (pF) VGS (Volts) 8 6 4 2 600 Ciss 400 Coss 200 Crss 0 0 0 2 4 6 8 10 0 Qg (nC) Figure 7: Gate-Charge Characteristics 40 50 60 TJ(Max)=150°C TA=25°C 10µs 10.0 1ms 1s 1.0 10s TJ(Max)=150°C TA=25°C 30 Power (W) ID (Amps) 100µs 10ms 0.1s 20 10 DC 0 0.001 0.1 1 10 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=40°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) VDS (Volts) ZθJA Normalized Transient Thermal Resistance 30 40 RDS(ON) limited 10 20 VDS (Volts) Figure 8: Capacitance Characteristics 100.0 0.1 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000