AOSMD AO4613L Complementary enhancement mode field effect transistor Datasheet

AO4613
Complementary Enhancement Mode Field Effect Transistor
General Description
The AO4613 uses advanced trench
technology MOSFETs to provide
excellent RDS(ON) and low gate charge.
The complementary MOSFETs may be
used to form a level shifted high side
switch, and for a host of other
applications. It is ESD protected.
Standard product AO4613 is Pb-free
(meets ROHS & Sony 259
specifications). AO4613L is a Green
Product ordering option. AO4613 and
AO4613L are electrically identical
Features
n-channel
p-channel
VDS (V) = 30V
-30V
-6.1A (V GS=10V)
ID = 7.2A (VGS=10V)
RDS(ON)
RDS(ON)
< 24mΩ (VGS=10V)
< 37m Ω (VGS = -10V)
< 40mΩ (VGS=4.5V)
< 60m Ω (VGS = -4.5V)
ESD rating: 1500V (HBM)
D1
D2
S2
G2
S1
G1
1
2
3
4
8
7
6
5
D2
D2
D1
D1
G2
G1
S2
SOIC-8
n-channel
Absolute Maximum Ratings T A=25°C unless otherwise noted
Parameter
Max n-channel
Symbol
VDS
Drain-Source Voltage
30
VGS
Gate-Source Voltage
±20
Continuous Drain
Current A
Pulsed Drain Current
B
TA=25°C
Power Dissipation
Avalanche Current B
TA=70°C
TJ, TSTG
Thermal Characteristics: n-channel and p-channel
Parameter
A
t ≤ 10s
Maximum Junction-to-Ambient
A
Steady-State
Maximum Junction-to-Ambient
Steady-State
Maximum Junction-to-Lead C
A
t ≤ 10s
Maximum Junction-to-Ambient
A
Steady-State
Maximum Junction-to-Ambient
C
Steady-State
Maximum Junction-to-Lead
Alpha & Omega Semiconductor, Ltd.
V
-5.1
30
-30
2
2
1.44
1.44
15
20
A
11
20
mJ
-55 to 150
-55 to 150
°C
IAR
Junction and Storage Temperature Range
±20
Units
V
-6.1
PD
EAR
Max p-channel
-30
6.1
ID
IDM
Repetitive avalanche energy 0.1mH B
p-channel
7.2
TA=25°C
TA=70°C
S1
Symbol
RθJA
RθJL
RθJA
RθJL
Max
A
W
Typ
n-ch
n-ch
n-ch
55
92
37
Units
62.5 °C/W
110 °C/W
50 °C/W
p-ch
p-ch
p-ch
48
84
37
62.5 °C/W
110 °C/W
50 °C/W
AO4613
N-Channel Electrical Characteristics (T J=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Min
Conditions
ID=250µA, VGS=0V
IGSS
Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1
ID(ON)
On state drain current
VGS=10V, VDS=5V
20
5
VGS=10V, I D=7.2A
TJ=125°C
VGS=4.5V, I D=4A
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS=1A
Maximum Body-Diode Continuous Current
VDS=5V, ID=7.2A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
V
1
TJ=55°C
Static Drain-Source On-Resistance
10
µA
10
µA
2
3
V
20
24
29
35
30
40
mΩ
1
V
3
A
630
pF
A
18
522
mΩ
S
0.77
VGS=0V, VDS=15V, f=1MHz
110
VGS=0V, VDS=0V, f=1MHz
2.1
3
Ω
11
15
nC
5.3
7
nC
pF
75
VGS=10V, VDS=15V, I D=7.2A
VGS=10V, VDS=15V, RL=2.1Ω,
RGEN=3Ω
pF
1.9
nC
4
nC
4.7
7
ns
4.9
10
ns
16.2
22
ns
3.5
7
ns
ns
nC
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=7.2A, dI/dt=100A/µs
15.7
20
Body Diode Reverse Recovery Charge
IF=7.2A, dI/dt=100A/µs
7.9
10
Qrr
Units
30
Zero Gate Voltage Drain Current
IS
Max
VDS=24V, VGS=0V
IDSS
RDS(ON)
Typ
A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in
any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. RθJL and RθJC are equivalent terms referring to thermal
resistance from junction to drain lead.
D. The static characteristics in Figures 1 to 6 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve
provides a single pulse rating.
F. Rev 0: August 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO4613
N-CH TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
5V
10V
20
4.5V
25
15
ID(A)
ID (A)
20
3.5V
10
5
VDS=5V
16
4V
12
8
125°C
4
VGS=3V
25°C
0
0
0
1
2
3
4
0
5
0.5
2
2.5
3
3.5
4
4.5
150
175
1.6
35
Normalized On-Resistance
40
RDS(ON) (mΩ)
1.5
VGS (Volts)
Figure 2: Transfer Characteristics
VDS (Volts)
Fig 1: On-Region Characteristics
VGS=4.5V
30
25
20
15
VGS=10V
1.5
VGS=10V
ID=7.2A
1.4
1.3
VGS=4.5V
ID=4A
1.2
1.1
1
0.9
0.8
10
0
5
10
15
0
20
25
50
75
100
125
Temperature ( °C)
Figure 4: On-Resistance vs. Junction
Temperature
ID (Amps)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
70
1.0E+01
ID=7.2A
60
1.0E+00
1.0E-01
50
IS Amps
RDS(ON) (mΩ)
1
125°C
40
125°C
1.0E-02
25°C
1.0E-03
30
20
1.0E-04
25°C
1.0E-05
10
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
VSD (Volts)
Figure 6: Body diode characteristics
1.0
AO4613
N-CH TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
10
800
Capacitance (pF)
VGS (Volts)
8
f=1MHz
VGS=0V
900
VDS=15V
ID=7.2A
6
4
Ciss
700
600
500
400
300
200
2
Coss
100
Crss
0
0
0
2
4
6
8
10
0
12
Qg (nC)
Figure 7: Gate-Charge characteristics
100
100µs
0.1s
1s
DC
0.1
1
10
ZθJA Normalized Transient
Thermal Resistance
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=62.5°C/W
30
20
0
0.001
100
VDS (Volts)
10
25
10
10s
0.1
20
TJ(Max)=150°C
TA=25°C
30
10µs
10ms
1
15
40
Power W
ID (Amps)
1ms
10
10
VDS (Volts)
Figure 8: Capacitance Characteristics
TJ(Max)=150°C
TA=25°C
RDS(ON)
limited
5
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
T
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
100
1000
AO4613
P-Channel Electrical Characteristics (T J=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=-250µA, VGS=0V
-30
IGSS
Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=-250µA
-1
ID(ON)
On state drain current
VGS=-10V, VDS=-5V
30
RDS(ON)
Static Drain-Source On-Resistance
VGS=-10V, I D=-6.1A
TJ=125°C
VGS=-4.5V, I D=-4A
Forward Transconductance
VSD
Diode Forward Voltage
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
VDS=-5V, ID=-6.1A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge (10V)
Qg(4.5V) Total Gate Charge (4.5V)
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Qrr
V
TJ=55°C
gFS
Units
-1
Zero Gate Voltage Drain Current
Coss
Max
VDS=-24V, VGS=0V
IDSS
IS
Typ
-5
-1.7
10
µA
-3
V
A
28
37
39
48
45
60
12.5
VGS=-10V, VDS=-15V, I D=-6.1A
mΩ
-1
V
3
A
1250
pF
179
pF
134
VGS=0V, VDS=0V, f=1MHz
mΩ
S
-0.77
1040
VGS=0V, VDS=-15V, f=1MHz
µA
pF
5
10
Ω
16.8
22
nC
8.7
12
nC
3.4
nC
5
nC
9
12
ns
5.7
11
ns
22.7
30
ns
10.2
20
ns
IF=-6.1A, dI/dt=100A/µs
21.7
27
IF=-6.1A, dI/dt=100A/µs
13.6
18
ns
nC
VGS=-10V, VDS=-15V, RL=2.5Ω,
RGEN=3Ω
A: The value of R θJA
is measured with the device mounted on 1in22 FR-4 board with 2oz. Copper, in a still air environment with TAA =25°C. The value in
θJA
any
given
application
depends on
the user's
specific
design.
The
current
rating
is based
the t≤ 10s
thermal
rating. rating.
value in any a given application
depends
on the
user'sboard
specific
board
design.
The
current
ratingon
is based
on the
t≤ 10sresistance
thermal resistance
B: Repetitive rating, pulse width limited by junction temperature.
is the sum of the thermal impedence from junction to lead RθJL
and lead to ambient. RθJL and RθJC are equivalent terms referring to
C. The R θJA
θJA
θJL
thermal
resistance
from junction
to drain
lead.
D. The static
characteristics
in Figures
1 to
6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max.
D.
The static
characteristics
Figures
1 to 6,12,14
are on
obtained
using
80µswith
pulses,
cyclein0.5%
E. These
tests
are performedinwith
the device
mounted
1 in2 FR-4
board
2oz.duty
Copper,
a stillmax.
air environment with TA=25°C. The SOA
E.
These
tests are
performed
with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve
curve
provides
a single
pulse rating.
provides a single pulse rating.
F. Rev 0: August 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO4613
P-CH TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
30
-10V
-ID (A)
20
-4V
-5V
20
VDS=-5V
-4.5V
-6V
15
-ID(A)
25
-3.5V
10
VGS=-3V
5
15
10
125°C
5
25°C
-2.5V
0
0
0
1
2
3
4
5
0
1
90
Normalized On-Resistance
70
RDS(ON) (mΩ)
3
4
5
6
1.60
80
60
VGS=-4.5V
50
40
VGS=-10V
30
VGS=-10V
ID=-6.1A
1.40
VGS=-4.5V
ID=-4
1.20
1.00
0.80
20
0
5
10
15
20
0
25
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
100
1.0E+01
ID=-6.1A
90
1.0E+00
80
1.0E-01
70
125°C
1.0E-02
60
-IS (A)
RDS(ON) (mΩ)
2
-VGS(Volts)
Figure 2: Transfer Characteristics
-VDS (Volts)
Fig 1: On-Region Characteristics
125°C
50
1.0E-03
40
1.0E-04
25°C
30
25°C
1.0E-05
20
1.0E-06
10
3
4
5
6
7
8
9
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
10
0.0
0.2
0.4
0.6
0.8
-VSD (Volts)
Figure 6: Body-Diode Characteristics
1.0
AO4613
P-CH TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1500
10
VDS=-15V
ID=-6.1A
1250
Capacitance (pF)
-VGS (Volts)
8
6
4
2
Ciss
1000
750
500
Coss
0
0
4
8
12
16
0
20
0
-Qg (nC)
Figure 7: Gate-Charge Characteristics
10µs
100µs
RDS(ON)
limited
0.1s
1ms
1s
25
30
TJ(Max)=150°C
TA=25°C
20
DC
0
0.001
0.1
1
10
100
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=62.5°C/W
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
-VDS (Volts)
10
20
10
10s
0.1
15
30
10ms
1.0
10
40
TJ(Max)=150°C, TA=25°C
10.0
5
-VDS (Volts)
Figure 8: Capacitance Characteristics
Power (W)
-ID (Amps)
100.0
ZθJA Normalized Transient
Thermal Resistance
Crss
250
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
T
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
100
1000
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