AO4625 Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4625 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in power inverters, and other applications.Standard Product AO4625 is Pbfree (meets ROHS & Sony 259 specifications). AO4625L is a Green Product ordering option. AO4625 and AO4625L are electrically identical. n-channel p-channel VDS (V) = 30V -30V ID = 6.9A (VGS=10V) -5.4A (VGS = -10V) RDS(ON) RDS(ON) < 28mΩ (VGS=10V) < 45mΩ (VGS = -10V) < 42mΩ (VGS=4.5V) < 75mΩ (VGS = -4.5V) D1 D2 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G1 G2 S1 S2 SOIC-8 p-channel n-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max n-channel VDS Drain-Source Voltage 30 VGS Gate-Source Voltage ±20 TA=25°C Continuous Drain Current A Pulsed Drain Current TA=70°C B TA=25°C Power Dissipation TA=70°C Junction and Storage Temperature Range ID IDM Thermal Characteristics: n-channel and p-channel Parameter t ≤ 10s Maximum Junction-to-Ambient A A Steady-State Maximum Junction-to-Ambient C Steady-State Maximum Junction-to-Lead A t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient C Steady-State Maximum Junction-to-Lead Alpha & Omega Semiconductor, Ltd. ±20 6.9 -5.4 5.8 -4.6 30 -20 A 2 2 1.44 -55 to 150 -55 to 150 Symbol RθJA RθJL RθJA RθJL Device n-ch n-ch n-ch Typ 48 74 35 p-ch p-ch p-ch 48 74 35 Units V V 1.44 PD TJ, TSTG Max p-channel -30 W Max 62.5 110 40 °C Units °C/W °C/W °C/W 62.5 °C/W 110 °C/W 40 °C/W AO4625 N-CHANNEL: Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0V VDS=24V, VGS=0V IDSS Zero Gate Voltage Drain Current IGSS VGS(th) ID(ON) Gate-Body leakage current Gate Threshold Voltage On state drain current RDS(ON) Static Drain-Source On-Resistance gFS VSD IS VGS=4.5V, ID=5.0A Forward Transconductance VDS=5V, ID=6.9A Diode Forward Voltage IS=1A Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge Min Conditions Typ Max 0.004 1 5 100 3 30 V TJ=55°C VDS=0V, VGS=±20V VDS=VGS ID=250μA VGS=4.5V, VDS=5V VGS=10V, ID=6.9A 1 30 TJ=125°C VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=6.9A VGS=10V, VDS=15V, RL=2.2Ω, RGEN=3Ω IF=6.9A, dI/dt=100A/μs IF=6.9A, dI/dt=100A/μs 10 Units 1.86 μA nA V A 22.5 31.3 34.5 15.4 0.76 28 38 42 mΩ 1 3 S V A 680 102 77 3 820 13.84 6.74 1.82 3.2 4.6 4.1 20.6 5.2 17 8.1 nC nC nC nC ns ns ns ns 16.5 7.8 20 ns nC 4.5 mΩ pF pF pF Ω A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 μs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. Rev 0: Apr. 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. AO4625 N-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 30 10V 6V 5V 4.5V 25 VDS=5V 16 4V 12 ID(A) ID (A) 20 15 3.5V 8 10 VGS=3V 5 125°C 25°C 4 0 0 0 1 2 3 4 5 0 0.5 VDS (Volts) Fig 1: On-Region Characteristics 1.5 2 2.5 3 3.5 4 4.5 VGS (Volts) Figure 2: Transfer Characteristics 1.6 Normalized On-Resistance 60 50 RDS(ON) (mΩ) 1 VGS=4.5V 40 30 20 VGS=10V ID=6.9A 1.5 1.4 VGS=10V 1.3 VGS=4.5 1.2 1.1 1 0.9 10 0 5 10 15 20 0.8 0 ID (Amps) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 100 150 200 Temperature ( °C) Figure 4: On-Resistance vs. Junction Temperature 70 1.0E+01 ID=6.9A 60 1.0E+00 1.0E-01 50 IS Amps RDS(ON) (mΩ) 50 125°C 40 125°C 1.0E-02 25°C 1.0E-03 30 1.0E-04 25°C 20 1.0E-05 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body diode characteristics 1.0 AO4625 N-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1000 10 VDS=15V ID=6.9A 800 Capacitance (pF) VGS (Volts) 8 f=1MHz VGS=0V 900 6 4 2 700 Ciss 600 500 400 300 200 Coss 100 0 0 2 4 6 8 10 12 Crss 0 14 0 Qg (nC) Figure 7: Gate-Charge characteristics 5 10 15 100 25 30 40 TJ(Max)=150°C TA=25°C 1ms 10 10μs 10ms 0.1s RDS(ON) limited 1 TJ(Max)=150°C TA=25°C 30 100μs Power W ID (Amps) 20 VDS (Volts) Figure 8: Capacitance Characteristics 1s 20 10 10s DC 0 1E-04 0.001 0.01 0.1 0.1 1 10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) ZθJA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000 AO4625 P-CHANNEL: Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250μA, VGS=0V VDS=-24V, VGS=0V -30 IDSS Zero Gate Voltage Drain Current IGSS VGS(th) ID(ON) Gate-Body leakage current Gate Threshold Voltage On state drain current RDS(ON) Static Drain-Source On-Resistance gFS VSD IS VGS=-4.5V, ID=-4A Forward Transconductance VDS=-5V, ID=-5.4A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg (10V) Total Gate Charge (10V) Qg (4.5V) Total Gate Charge (4.5V) Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge Typ -1 -20 TJ=125°C VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=-10V, VDS=-15V, ID=-5.4A VGS=-10V, VDS=-15V, RL=2.8Ω, RGEN=3Ω IF=-5.4A, dI/dt=100A/μs IF=-5.4A, dI/dt=100A/μs 6 Units V TJ=55°C VDS=0V, VGS=±20V VDS=VGS ID=-250μA VGS=-4.5V, VDS=-5V VGS=-10V, ID=-5.4A Max -1.98 35 49 58 8.6 -0.78 -1 -5 ±100 -3 45 64 75 μA nA V A mΩ mΩ S V A -1 -2.8 700 120 75 10 900 14.7 7.6 2 3.8 8.3 5 29 14 19 10 nC nC nC nC ns ns ns ns 23.5 13.4 30 ns nC 15 pF pF pF Ω A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 μs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. Rev 0: Apr. 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. AO4625 P-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 20 -10V -5V -6V -4.5V -ID(A) -ID (A) -3.5V 10 VGS=-3V 5 VDS=-5V 8 -4V 15 6 4 125° 2 25° -2.5V 0 0 0 1 2 3 4 5 0 1 100 Normalized On-Resistance RDS(ON) (mΩ) 3 4 1.6 80 VGS=-4.5V 60 VGS=-10V 40 20 VGS=-4.5V 1.4 VGS=-10V 1.2 1 ID=-5.4A 0.8 0 2 4 6 8 10 0 25 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 140 1E+01 ID=-5.4A 1E+00 120 1E-01 100 -IS (A) RDS(ON) (mΩ) 2 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Figure 1: On-Region Characteristics 125°C 80 60 125°C 1E-02 1E-03 25°C 1E-04 40 1E-05 25°C 1E-06 20 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AO4625 P-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1200 10 VDS=-15V ID=-5.4A 1000 Capacitance (pF) -VGS (Volts) 8 6 4 2 Cis 800 600 400 Cos 200 Crs 0 0 0 2 4 6 8 10 12 14 16 0 5 -Qg (nC) Figure 7: Gate-Charge Characteristics 100 25 30 TJ(Max)=150°C TA=25°C 100μs 30 10μs Power (W) -ID (Amps) 20 40 10 1ms RDS(ON) limited 15 -VDS (Volts) Figure 8: Capacitance Characteristics TJ(Max)=150°C TA=25°C 1 10 0.1s 10ms 1s 20 10 10s DC 0.1 0.1 1 10 0 0.0001 0.001 100 -VDS (Volts) 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) ZθJA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000