AOSMD AO4805 30v dual p-channel mosfet Datasheet

AO4805
30V
Dual P-Channel MOSFET
General Description
Product Summary
The AO4805 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for load switch
and battery protection applications.
ID (at VGS=-20V)
VDS
-30V
-9A
RDS(ON) (at VGS=-20V)
< 15mΩ
RDS(ON) (at VGS =-10V)
< 18mΩ
100% UIS Tested
100% Rg Tested
SOIC-8
Top View
D2
D1
Bottom View
Top View
S2
G2
S1
G1
1
2
3
4
8
7
6
5
D2
D2
D1
D1
G2
G1
S2
S1
Pin1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TA=25°C
Continuous Drain
Current
Pulsed Drain Current
C
Units
V
±25
V
-9
ID
TA=70°C
Maximum
-30
-7
A
IDM
-50
Avalanche Current C
IAS, IAR
33
A
Avalanche energy L=0.1mH C
TA=25°C
EAS, EAR
54
mJ
Power Dissipation B
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
Rev 7: December 2010
2
PD
TA=70°C
TJ, TSTG
Symbol
t ≤ 10s
Steady-State
Steady-State
W
1.3
RθJA
RθJL
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-55 to 150
Typ
48
74
32
°C
Max
62.5
90
40
Units
°C/W
°C/W
°C/W
Page 1 of 5
AO4805
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=-250µA, VGS=0V
-30
Typ
Max
V
VDS=-30V, VGS=0V
-1
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=-250µA
-1.7
ID(ON)
On state drain current
VGS=-10V, VDS=-5V
-50
TJ=55°C
-5
VDS=0V, VGS=±25V
±100
VGS=-20V, ID=-9A
-2.3
-2.8
µA
nA
V
A
10
VGS=-10V, ID=-8A
Units
15
12
18
13
20
mΩ
RDS(ON)
Static Drain-Source On-Resistance
VGS=-4.5V, ID=-5A
29
mΩ
gFS
Forward Transconductance
VDS=-5V, ID=-9A
27
S
VSD
Diode Forward Voltage
IS=-1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
TJ=125°C
-0.7
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
2060
VGS=0V, VDS=-15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
VGS=-10V, VDS=-15V, ID=-9A
1.2
mΩ
-1
V
-2.5
A
2600
pF
370
pF
295
pF
2.4
3.6
30
39
Ω
nC
4.6
nC
Qgd
Gate Drain Charge
10
nC
tD(on)
Turn-On DelayTime
11
ns
tr
Turn-On Rise Time
9.4
ns
tD(off)
Turn-Off DelayTime
24
ns
tf
Turn-Off Fall Time
12
ns
trr
Qrr
VGS=-10V, VDS=-15V, RL=1.67Ω,
RGEN=3Ω
IF=-9A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=-9A, dI/dt=100A/µs
30
40
22
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 7: December 2010
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Page 2 of 5
AO4805
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
80
-5V
-10V
VDS=-5V
-6V
-4.5V
60
-ID(A)
-ID (A)
60
40
40
-4V
20
25°C
125°C
20
VGS=-3.5V
0
0
1
2
3
4
5
0
1
-VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
6
1.6
15
Normalized On-Resistance
RDS(ON) (mΩ )
20
2
3 (Volts) 4
5
V
GS
Figure 2: Transfer Characteristics (Note E)
VGS=-10V
10
VGS=-20V
5
VGS=-10V
ID=-8A
1.4
1.2
VGS=-20V
ID=-9A
1
17
5
2
10
0.8
0
3
6
9
12
15
0
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
25
50
75
100
125
150
175
Temperature (°C)
0
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
35
1.0E+01
ID=-9A
30
1.0E+00
25
1.0E-01
125°C
IS (A)
RDS(ON) (mΩ )
40
20
25°C
125°C
1.0E-02
15
1.0E-03
10
1.0E-04
25°C
1.0E-05
5
2
4
6
8
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 7: December 2010
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 5
AO4805
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
3000
10
VDS=-15V
ID=-9A
2500
Ciss
Capacitance (pF)
-VGS (Volts)
8
6
4
2000
1500
1000
Coss
2
500
0
Crss
0
0
5
10
15
20
25
Qg (nC)
Figure 7: Gate-Charge Characteristics
30
0
1000.0
5
10
15
20
25
-VDS (Volts)
Figure 8: Capacitance Characteristics
30
10000
TA=25°C
100.0
10.0
Power (W)
ID (Amps)
1000
10µs
RDS(ON)
limited
100µs
1ms
10ms
1.0
TJ(Max)=150°C
TA=25°C
0.1
100
10
10s
DC
0.0
0.01
0.1
1
VDS (Volts)
10
1
100
0.00001
0.1
10
1000
Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction-toAmbient (Note F)
Figure 10: Maximum Forward Biased Safe
Operating Area (Note F)
0.001
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=90°C/W
0.1
PD
0.01
Single Pulse
Ton
0.001
0.00001
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 7: December 2010
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Page 4 of 5
AO4805
Gate Charge Test Circuit & Waveform
Vgs
Qg
-10V
-
-
VDC
+
VDC
Qgd
Qgs
Vds
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
Vgs
-
DUT
Vgs
VDC
td(on)
t d(off)
tr
tf
90%
Vdd
+
Rg
Vgs
10%
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
2
L
E AR= 1/2 LIAR
Vds
Vds
Id
-
Vgs
Vgs
VDC
+
Rg
BVDSS
Vdd
Id
I AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds Isd
Vgs
Ig
Rev 7: December 2010
L
-Isd
+ Vdd
t rr
dI/dt
-I RM
Vdd
VDC
-
-I F
-Vds
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Page 5 of 5
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