AO4836 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4836 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in buck converters. It is ESD protected. AO4836 is Pbfree (meets ROHS & Sony 259 specifications). AO4836L is a Green Product ordering option. AO4836 and AO4836L are electrically identical. VDS (V) = 30V ID = 7.2A RDS(ON) < 24mΩ (VGS = 10V) RDS(ON) < 40mΩ (VGS = 4.5V) ESD rating: 1500V (HBM) D2 D1 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G1 S1 SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain TA=25°C A Current ID TA=70°C Pulsed Drain Current G2 B IDM TA=25°C Power Dissipation TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C TJ, TSTG Symbol Alpha & Omega Semiconductor, Ltd. Maximum 30 ±20 Units V V 7.2 6.1 A 30 2 1.44 -55 to 150 PD t ≤ 10s Steady-State Steady-State S2 RθJA RθJL Typ 55 92 37 W °C Max 62.5 110 50 Units °C/W °C/W °C/W AO4836 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS VGS(th) ID(ON) Gate-Body leakage current Gate Threshold Voltage On state drain current Conditions Min ID=250µA, VGS=0V VDS=24V, VGS=0V 30 VDS=0V, VGS=±20V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=7.2A 1 20 TJ=125°C Static Drain-Source On-Resistance gFS VSD IS VGS=4.5V, ID=4A Forward Transconductance VDS=5V, ID=7.2A Diode Forward Voltage IS=1A Maximum Body-Diode Continuous Current SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge Max 2 1 5 10 3 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=7.2A VGS=10V, VDS=15V, RL=2.1Ω, RGEN=3Ω IF=7.2A, dI/dt=100A/µs IF=7.2A, dI/dt=100A/µs 10 Units V TJ=55°C RDS(ON) DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Typ µA µA V A 20 29 30 18 0.77 24 35 40 522 110 75 2.1 630 11 5.3 1.9 4 4.7 4.9 16.2 3.5 15 7 7 10 22 7 nC nC nC nC ns ns ns ns 15.7 7.9 20 10 ns nC 1 3 3 mΩ mΩ S V A pF pF pF Ω 2 A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. F. Rev 0: July 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4836 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 5V 10V 20 4.5V 25 12 ID(A) ID (A) 20 VDS=5V 16 4V 15 3.5V 10 5 8 125°C 4 VGS=3V 25°C 0 0 0 1 2 3 4 0 5 0.5 40 Normalized On-Resistance RDS(ON) (mΩ) 1.5 2 2.5 3 3.5 4 4.5 150 175 1.6 35 VGS=4.5V 30 25 20 15 VGS=10V 1.5 VGS=10V ID=7.2A 1.4 1.3 VGS=4.5V ID=6A 1.2 1.1 1 0.9 0.8 10 0 5 10 15 0 20 25 50 75 100 125 Temperature ( °C) Figure 4: On-Resistance vs. Junction Temperature ID (Amps) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 1.0E+01 70 ID=7.2A 60 1.0E+00 50 1.0E-01 IS Amps RDS(ON) (mΩ) 1 VGS (Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics 125°C 40 125°C 1.0E-02 25°C 1.0E-03 30 1.0E-04 25°C 20 1.0E-05 10 0.0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body diode characteristics 1.0 AO4836 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1000 10 800 Capacitance (pF) VGS (Volts) 8 f=1MHz VGS=0V 900 VDS=15V ID=7.2A 6 4 Ciss 700 600 500 400 300 200 2 Coss 100 Crss 0 0 0 2 4 6 8 10 0 12 100 ID (Amps) 20 25 30 30 100µs 10µs 10ms 0.1s 1 15 TJ(Max)=150°C TA=25°C Power W 1ms 10 10 40 TJ(Max)=150°C TA=25°C RDS(ON) limited 5 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge characteristics 1s 20 10 10s DC 0 0.001 0.1 0.1 1 10 100 VDS (Volts) ZθJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 0.01 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000