AO4918A Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features Q1 The AO4918A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DCDC converters. A Schottky diode is co-packaged in parallel with the synchronous MOSFET to boost efficiency further. AO4918A is Pb-free (meets ROHS & Sony 259 specifications). AO4918AL is a Green Product ordering option. AO4918A and AO4918AL are electrically identical. VDS (V) = 30V ID = 9.3A RDS(ON) < 14.5mΩ RDS(ON) < 16mΩ Q2 VDS(V) = 30V ID=8.5A <18mΩ (VGS = 10V) <27mΩ (VGS = 4.5V) SCHOTTKY VDS (V) = 30V, IF = 3A, VF<0.5V@1A D1 D2 D2 G1 S1/A 1 2 3 4 8 7 6 5 G2 D1/S2/K D1/S2/K D1/S2/K K TA=70°C Power Dissipation Junction and Storage Temperature Range Parameter Reverse Voltage Continuous Forward Current A B TA=25°C Power Dissipation TJ, TSTG TA=25°C Pulsed Diode Forward Current A PD Symbol VDS TA=70°C TA=70°C Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. A G1 IDM TA=25°C Q2 Q1 SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain TA=25°C Current A ID TA=70°C Pulsed Drain Current B D2 G2 S1 S2 Max Q1 30 Max Q2 30 Units V ±12 ±20 V 9.3 7.4 8.5 6.7 A 40 30 2 2 1.28 -55 to 150 1.28 -55 to 150 Maximum Schottky 30 W °C Units V 3 IF 2.2 IFM 20 PD TJ, TSTG 2 1.28 -55 to 150 A W °C AO4918A Parameter: Thermal Characteristics MOSFET Q1 A t ≤ 10s Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Ambient A C Steady-State Maximum Junction-to-Lead Symbol Parameter: Thermal Characteristics MOSFET Q2 t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient A C Steady-State Maximum Junction-to-Lead Symbol Thermal Characteristics Schottky A Maximum Junction-to-Ambient A Maximum Junction-to-Ambient C Maximum Junction-to-Lead t ≤ 10s Steady-State Steady-State RθJA RθJL RθJA RθJL RθJA RθJL Typ 53 81.9 30.5 Max 62.5 110 40 Units Typ 53 81.9 30.5 Max 62.5 110 40 Units 50.4 86 26.6 62.5 110 40 A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. F. The Schottky appears in parallel with the MOSFET body diode, even though it is a separate chip. Therefore, we provide the net forward drop, capacitance and recovery characteristics of the MOSFET and Schottky. However, the thermal resistance is specified for each chip separately. Rev 0 : Aug 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha Omega Semiconductor, Ltd. °C/W °C/W °C/W AO4918A Q1 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter IDSS Min Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V VR=30V, TJ=150°C IGSS Gate-Body leakage current VDS=0V, VGS= ±12V Gate Threshold Voltage VDS=VGS ID=250µA 0.6 ID(ON) On state drain current VGS=4.5V, VDS=5V 40 VGS=10V, ID=9.3A TJ=125°C Static Drain-Source On-Resistance VGS=4.5V, ID=8.8A gFS Forward Transconductance VSD Diode+Schottky Forward Voltage IS=1A Maximum Body-Diode+Schottky Continuous Current IS VDS=5V, ID=9.3A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance (FET + Schottky) Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=9.3A Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time 30 3.2 10 mA 12 20 100 nA 1.1 2 V 11.7 14.5 15.4 19 13.1 16 A 37 0.46 VGS=10V, VDS=15V, RL=1.6Ω, RGEN=3Ω mΩ mΩ S 0.5 V 3.5 A 3740 4488 pF 295 pF 186 SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd V 0.007 0.05 VGS(th) RDS(ON) Max Units 30 VR=30V VR=30V, TJ=125°C Zero Gate Voltage Drain Current. (Set by Schottky leakage) Typ pF 0.86 1.1 Ω 30.5 37 nC 4.5 nC 8.5 nC 6 9 ns 8.2 12 ns 54.5 75 ns 10.5 15 ns tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode + Schottky Reverse Recovery Time IF=9.3A, dI/dt=100A/µs 23.5 28 ns Qrr Body Diode + Schottky Reverse Recovery Charge IF=9.3A, dI/dt=100A/µs 13.3 16 nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any 8.5 given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. 30 D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. F. The Schottky appears in parallel with the MOSFET body diode, even though it is a separate chip. Therefore, we provide the net forward drop, capacitance and recovery characteristics of the MOSFET and Schottky. However, the thermal resistance is specified for each chip separately. Rev 0 : Aug 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha Omega Semiconductor, Ltd. AO4918A Q1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 30 10V 25 4.5V 30 VDS=5V 20 ID(A) ID (A) 20 2.5V 15 125°C 10 VGS=2V 10 5 25°C 0 0 0 1 2 3 4 0.5 5 1 16 2 2.5 Normalized On-Resistance 1.8 15 RDS(ON) (mΩ) 1.5 VGS (Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics VGS=4.5V 14 13 12 11 VGS=10V VGS=4.5V 1.6 1.4 VGS=10V 1.2 ID=9.3A 1 10 0 5 10 15 20 25 0.8 30 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 75 100 125 150 8.5 175 Temperature (°C) Figure 4: On resistance vs. Junction Temperature 30 30 1.0E+01 125°C 1.0E+00 ID=9.3A 25 125°C 1.0E-01 20 IS (A) RDS(ON) (mΩ) 25 15 1.0E-02 25°C 1.0E-03 1.0E-04 25°C 10 1.0E-05 5 0 2 4 6 8 10 VGS (Volts) Figure 5: On resistance vs. Gate-Source Voltage 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics (Note F) Alpha Omega Semiconductor, Ltd. 1.0 AO4918A Q1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10000 5 VDS=15V ID=9.3A Capacitance (pF) VGS (Volts) 4 f=1MHz VGS=0V Ciss 3 2 1000 1 0 Crss 100 0 5 10 15 20 25 30 35 0 Qg (nC) Figure 7: Gate-Charge Characteristics 5 10 15 20 25 30 VDS (Volts) Figure 8: Capacitance Characteristics 100.0 40 RDS(ON) limited TJ(Max)=150°C, TA=25°C 100µs 30 10µs Power (W) 1ms 10.0 ID (A) 10ms 0.1s 1.0 TJ(Max)=150°C TA=25°C 1s 20 10 10s DC 0 0.001 0.1 0.1 1 10 100 VDS (Volts) 0.01 0.1 1 10 100 1000 Pulse Width (s) 8.5 Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 30 ZθJA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha Omega Semiconductor, Ltd. 100 1000 AO4918A Q2 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V 30 1 TJ=55°C 5 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=4.5V, VDS=5V 30 RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=8.5A TJ=125°C VGS=4.5V, ID=6A gFS Forward Transconductance VDS=5V, ID=8.5A VSD Diode Voltage Maximum Body Continuous Current IS=1A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg Total Gate Charge Max Units V VDS=24V, VGS=0V VGS(th) IS Typ 1.7 100 nA 3 V A 14.6 18 22 27 20.6 27 mΩ 1 V 3 A 1250 pF 23 0.75 955 VGS=0V, VDS=15V, f=1MHz VGS=10V, VDS=15V, ID=8.5A mΩ S 145 pF 112 VGS=0V, VDS=0V, f=1MHz µA pF 0.5 0.85 Ω 17 24 nC 9 12 nC Qgs Gate Source Charge Qgd Gate Drain Charge 4.7 tD(on) Turn-On DelayTime 5 6.5 ns tr Turn-On Rise Time 6 7.5 ns tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr VGS=10V, VDS=15V, RL=1.8Ω, RGEN=3Ω 3.4 nC nC 19 25 ns 4.5 6 ns IF=8.5A, dI/dt=100A/µs 16.7 21 ns Body Diode Reverse Recovery Charge IF=8.5A, dI/dt=100A/µs 6.7 10 nC 2 A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev 0 : Aug 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISIN OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4918A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 4V 32 10V 25 20 24 3.5V ID(A) ID (A) VDS=5V 28 4.5V 15 10 20 125°C 16 12 VGS=3V 13.4 8 5 22 4 0 0 0 1 2 3 4 5 1.5 2 VDS (Volts) Fig 1: On-Region Characteristics 26 30.76 3.5 2.5 4 4.5 VGS(Volts) Figure 2: Transfer Characteristics 26 Normalized On-Resistance 1.6 24 VGS=4.5V 22 RDS(ON) (mΩ) 16 25°C 20 18 16 14 VGS=10V 12 10 VGS=10V ID=8.5A 1.4 VGS=4.5V 1.2 1 0.8 0 5 10 15 20 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 50 1.0E+00 ID=8.5A 1.0E-01 30 IS (A) RDS(ON) (mΩ) 40 125°C 125°C 1.0E-02 25°C 1.0E-03 20 1.0E-04 25°C 1.0E-05 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 AO4918A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1500 10 VDS=15V ID=8.5A 1250 Capacitance (pF) VGS (Volts) 8 6 4 2 Ciss 1000 750 500 Coss 0 16 22 26 Crss 0 0 4 8 12 16 20 0 5 Qg (nC) Figure 7: Gate-Charge Characteristics 15 0.76 20 25 30 50 10µs RDS(ON) limited 1ms 100µs ID (A) 10ms 0.1s 1.0 1s DC 10 100 VDS (Volts) D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 20 0 0.001 0.1 1 30 10 10s 0.1 TJ(Max)=150°C TA=25°C 40 Power (W) 10.0 10 VDS (Volts) Figure 8: Capacitance Characteristics 100.0 ZθJA Normalized Transient Thermal Resistance 13.4 250 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000