AOSMD AO6404 N-channel enhancement mode field effect transistor Datasheet

AO6404
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO6404 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.8V while
retaining a 12V VGS(MAX) rating. It is ESD protected.
Standard Product AO6404 is Pb-free (meets ROHS
& Sony 259 specifications). AO6404L is a Green
Product ordering option. AO6404 and AO6404L are
electrically identical.
VDS (V) = 20V
ID = 8.6A (VGS = 10V)
RDS(ON) < 17mΩ (VGS = 10V)
RDS(ON) < 18mΩ (VGS = 4.5V)
RDS(ON) < 24mΩ (VGS = 2.5V)
RDS(ON) < 33mΩ (VGS = 1.8V)
ESD Rating: 2000V HBM
D
TSOP-6
Top View
D
D
G
1 6
2 5
3 4
D
D
S
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
TA=25°C
Continuous Drain
Current A
Pulsed Drain Current
ID
IDM
TA=70°C
B
Junction and Storage Temperature Range
Alpha & Omega Semiconductor, Ltd.
±12
V
30
2
W
1.28
TJ, TSTG
°C
-55 to 150
Symbol
t ≤ 10s
Steady-State
Steady-State
A
6.8
PD
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Units
V
8.6
TA=25°C
Power Dissipation A
Maximum
20
RθJA
RθJL
Typ
45
70
33
Max
62.5
110
50
Units
°C/W
°C/W
°C/W
AO6404
Electrical Characteristics (T J=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
20
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS=±10V
25
BVGSO
Gate-Source Breakdown Voltage
VDS=0V, IG=±250uA
±12
Gate Threshold Voltage
VDS=VGS ID=250µA
0.5
ID(ON)
On state drain current
VGS=4.5V, VDS=5V
30
VGS=10V, ID=8.5A
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
A
14.8
18
mΩ
VGS=2.5V, ID=4A
18.8
24
mΩ
VGS=1.8V, ID=3A
25.5
33
mΩ
1
V
2.9
A
VDS=5V, ID=8A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Gate resistance
V
VGS=4.5V, ID=5A
Diode Forward Voltage
IS=1A,V GS=0V
Maximum Body-Diode Continuous Current
Rg
1
V
0.75
20
Forward Transconductance
Crss
µA
17
VSD
Output Capacitance
10
16
gFS
Coss
µA
13.4
TJ=125°C
IS
Units
10
TJ=55°C
VGS(th)
Static Drain-Source On-Resistance
Max
V
VDS=16V, V GS=0V
IDSS
RDS(ON)
Typ
VGS=0V, VDS=10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=4.5V, VDS=10V, ID=8.5A
mΩ
36
0.73
S
1810
pF
232
pF
200
pF
1.6
Ω
17.9
nC
1.5
nC
Qgd
Gate Drain Charge
4.7
nC
tD(on)
Turn-On DelayTime
2.5
ns
tr
Turn-On Rise Time
7.2
ns
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
Qrr
Body Diode Reverse Recovery Charge
VGS=10V, V DS=10V, R L=1.2Ω,
RGEN=3Ω
49
ns
10.8
ns
IF=8.5A, dI/dt=100A/µs
22
IF=8.5A, dI/dt=100A/µs
9.8
ns
nC
A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
Rev2: August 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
AO6404
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
10
35
30
2.5V
4.5V
2V
VDS=5V
25
30
20
ID(A)
ID (A)
25
20
15
15
10
125°C
10
VGS=1.5V
5
5
0
25°C
0
0
1
2
3
4
5
0
0.5
1
1.5
2
VGS(Volts)
Figure 2: Transfer Characteristics
VDS (Volts)
Fig 1: On-Region Characteristics
30
1.6
RDS(ON) (mΩ)
Normalized On-Resistance
VGS=1.8V
25
VGS=2.5V
20
VGS=4.5V
15
VGS=10V
10
5
VGS=4.5V
ID=5A
VGS=2.5V
1.4
VGS=10V
1.2
VGS=1.8V
1
0.8
0
5
10
15
20
0
25
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
10
40
35
1
30
125°C
ID=5A
0.1
25
125°C
20
IS (A)
RDS(ON) (mΩ)
2.5
15
0.01
25°C
0.001
25°C
10
0.0001
5
0.00001
0
0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
1.2
AO6404
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
3000
5
VDS=10V
ID=8A
2500
Capacitance (pF)
VGS (Volts)
4
3
2
1
Ciss
2000
1500
1000
Coss
500
0
Crss
0
0
4
8
12
16
20
0
5
Qg (nC)
Figure 7: Gate-Charge Characteristics
100µs
1ms
10µs
10ms
1.0
1s
0.1s
0
0.001
1
10
100
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
D=Ton/(Ton+Toff)
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=62.5°C/W
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
VDS (Volts)
ZθJA Normalized Transient
Thermal Resistance
20
DC
0.1
10
TJ(Max)=150°C
TA=25°C
10
TJ(Max)=150°C
TA=25°C
0.1
20
30
Power (W)
ID (Amps)
40
RDS(ON)
limited
15
VDS (Volts)
Figure 8: Capacitance Characteristics
100.0
10.0
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
Toff
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
100
1000
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