AO6408 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO6408 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It offers operation over a wide gate drive range from 1.8V to 12V. It is ESD protected. This device is suitable for use as a load switch. Standard product AO6408 is Pbfree (meets ROHS & Sony 259 specifications). AO6408L is a Green Product ordering option. AO6408 and AO6408L are electrically identical. VDS (V) = 20V (VGS = 10V) ID = 8.8A RDS(ON) < 18mΩ (VGS = 10V) RDS(ON) < 20mΩ (VGS = 4.5V) RDS(ON) < 25mΩ (VGS = 2.5V) RDS(ON) < 32mΩ (VGS = 1.8V) ESD Rating: 2000V HBM D TSOP-6 Top View D D G 1 6 2 5 3 4 D D S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Continuous Drain Current A Pulsed Drain Current TA=70°C B Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. ±12 V ID 7 IDM 40 W 1.28 TJ, TSTG -55 to 150 Symbol t ≤ 10s Steady-State Steady-State A 2 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Units V 8.8 TA=25°C Power Dissipation Maximum 20 RθJA RθJL Typ 47.5 74 37 °C Max 62.5 110 40 Units °C/W °C/W °C/W AO6408, AO6408L Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V VDS=16V, VGS=0V 20 IDSS Zero Gate Voltage Drain Current IGSS BVGSO Gate-Source leakage current Gate-Source Breakdown Voltage Gate Threshold Voltage VDS=0V, VGS=±10V VDS=0V, IG=±250uA VDS=VGS ID=250µA On state drain current VGS=4.5V, VDS=5V VGS=10V, ID=8.8A VGS(th) ID(ON) ±12 0.5 gFS VSD IS VGS=4.5V, ID=8A VGS=2.5V, ID=6A VGS=1.8V, ID=4A Forward Transconductance VDS=5V, ID=8.8A Diode Forward Voltage IS=1A Maximum Body-Diode Continuous Current SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Qrr VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=4.5V, VDS=10V, ID=8.8A VGS=10V, VDS=10V, RL=1.1Ω, RGEN=3Ω Turn-Off Fall Time IF=8.8A, dI/dt=100A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=8.8A, dI/dt=100A/µs Units 0.75 10 25 µA ±10 µA 1 V V 40 Static Drain-Source On-Resistance DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Max V TJ=55°C TJ=125°C RDS(ON) Typ A 14.4 18.5 18 23 mΩ 16 20 mΩ 20.5 25 mΩ 25.6 33 0.72 32 mΩ 1 3 S V A 1810 232 200 1.6 2200 17.9 1.5 4.7 3.3 5.9 22 2.2 44 7.7 22 pF pF pF Ω nC nC nC ns ns ns ns 27 9.8 ns nC A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev3: August 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. AO6408, AO6408L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 10V 20 4.5V 2.5V 2V 12 ID(A) ID (A) VDS=5V 16 30 20 125°C 8 10 4 VGS=1.5V 0 0 0 1 2 3 4 VDS (Volts) Fig 1: On-Region Characteristics 0 5 40 0.5 1 1.5 2 VGS(Volts) Figure 2: Transfer Characteristics 2.5 1.6 VGS=2.5V,6A 30 Normalized On-Resistance VGS=1.8V RDS(ON) (mΩ) 25°C VGS=4.5V 20 0 0 5 10 15 VGS=1.8V, 4A 1.2 VGS=10V 10 VGS=4.5V, 8A 1.4 VGS=2.5V 20 VGS=10V, 8.8A 1 0.8 0 25 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 40 1.0E+00 ID=6A 30 125°C IS (A) RDS(ON) (mΩ) 1.0E-01 125°C 20 25°C 1.0E-02 25°C 1.0E-03 10 1.0E-04 0 1.0E-05 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AO6408, AO6408L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2800 5 VDS=10V ID=8.8A 2400 Capacitance (pF) VGS (Volts) 4 3 2 2000 Ciss 1600 1200 Coss 800 1 Crss 400 0 0 0 4 8 12 16 0 20 Qg (nC) Figure 7: Gate-Charge Characteristics 5 10 15 VDS (Volts) Figure 8: Capacitance Characteristics 20 100.0 40 TJ(Max)=150°C TA=25°C 10µs RDS(ON) limited 100µs 30 Power (W) 1ms ID (Amps) 10.0 10ms 0.1s 1.0 1s TJ(Max)=150°C TA=25°C 20 10 10s 0 0.001 DC 0.1 0.1 1 10 100 ZθJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 0.01 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000