AO6414 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO6414 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It offers operation over a wide gate drive range from 2.5V to 12V. This device is suitable for use as a load switch. Standard product AO6414 is Pb-free (meets ROHS & Sony 259 specifications). AO6414L is a Green Product ordering option. AO6414 and AO6414L are electrically identical. VDS (V) = 55V ID = 2.4A (VGS = 4.5V) RDS(ON) < 160mΩ (VGS = 4.5V) RDS(ON) < 200mΩ (VGS = 2.5V) D TSOP-6 Top View D D G 1 6 2 5 3 4 D D S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain TA=25°C Current A TA=70°C ID Pulsed Drain Current B IDM TA=25°C Power Dissipation TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C TJ, TSTG Symbol Alpha & Omega Semiconductor, Ltd. Units V V 2.3 1.9 A 9 1.56 1.1 -55 to 150 PD t ≤ 10s Steady-State Steady-State Maximum 55 ±12 RθJA RθJL Typ 58 94 37 W °C Max 80 120 50 Units °C/W °C/W °C/W AO6414 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=10mA, VGS=0V VDS=44V, VGS=0V 55 IDSS Zero Gate Voltage Drain Current IGSS VGS(th) ID(ON) Gate-Source leakage current Gate Threshold Voltage On state drain current RDS(ON) Static Drain-Source On-Resistance gFS VSD IS VGS=2.5V, ID=1.5A Forward Transconductance VDS=5V, ID=2.4A Diode Forward Voltage IS=1A Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Reverse Transfer Capacitance Crss Rg Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime Turn-On Rise Time tr tD(off) Turn-Off DelayTime Turn-Off Fall Time tf trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge Typ Max 0.002 1 5 ±100 2 V TJ=55°C VDS=0V, VGS=±12V VDS=VGS ID=250μA VGS=4.5V, VDS=5V VGS=4.5V, ID=2.4A 0.6 10 TJ=125°C VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=4.5V, VDS=25V, ID=2.4A VGS=10V, VDS=25V, RL=10.4Ω, RGEN=3Ω IF=2.4A, dI/dt=100A/μs IF=2.4A, dI/dt=100A/μs Units 1.3 μA nA V A 125 175 157 11 0.78 160 210 200 mΩ 1 1.9 S V A 214 31 12.6 1.3 300 2.6 0.6 0.8 2.3 2.4 16.5 2 20 17 3.3 nC nC nC ns ns ns ns 30 ns nC 3 mΩ pF pF pF Ω 2 A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 μs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev0: Nov. 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO6414 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 8 10V 4.5V 8 3.5V VDS=5V 2.5V 6 ID(A) ID (A) 6 4 4 125°C 2 VGS=2V 2 25°C 0 0 0 1 2 3 4 VDS (Volts) Fig 1: On-Region Characteristics 1 5 200 Normalized On-Resistance VGS=2.5V 160 140 VGS=4.5V 120 100 0 1.75 2 2.25 VGS(Volts) Figure 2: Transfer Characteristics 1 2 3 4 1.8 2.5 VGS=4.5V, 2.4A 1.6 1.4 VGS=2.5V,1.5A 1.2 1 0.8 5 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 350 ID=2.4A 300 1.0E+00 250 125°C 1.0E-01 125°C IS (A) RDS(ON) (mΩ) 1.5 2 180 RDS(ON) (mΩ) 1.25 200 1.0E-02 25°C 25°C 150 1.0E-03 100 1.0E-04 50 0 2 4 6 8 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 10 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AO6414 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 400 5 Capacitance (pF) 4 VGS (Volts) 350 VDS=25V ID=2.4A 3 2 300 Ciss 250 200 150 Coss 100 Crss 1 50 0 0 0 1 2 0 3 Qg (nC) Figure 7: Gate-Charge Characteristics 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 100.00 20 10μs RDS(ON) limited 1.00 0.10 1s 0.1s DC 10s 1ms 10 5 TJ(Max)=150°C TA=25°C 0 0.001 0.01 0.1 TJ(Max)=150°C TA=25°C 15 100μs 10ms Power (W) ID (Amps) 10.00 1 10 100 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) ZθJA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=80°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000