AOSMD AO6702L N-channel enhancement mode field effect transistor with schottky diode Datasheet

AO6702
N-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode
General Description
Features
The AO6702 uses advanced trench technology to provide
excellent R DS(ON) and low gate charge. A Schottky diode is
provided to facilitate the implementation of a bidirectional
blocking switch, or for DC-DC conversion applications.
Standard Product AO6702 is Pb-free (meets ROHS & Sony
259 specifications). AO6702L is a Green Product ordering
option. AO6702 and AO6702L are electrically identical.
VDS (V) = 20V
ID = 3.8A (VGS = 4.5V)
RDS(ON) < 50mΩ (VGS = 4.5V)
RDS(ON) < 65mΩ (VGS = 2.5V)
RDS(ON) < 95mΩ (VGS = 1.8V)
SCHOTTKY
VDS (V) = 20V, IF = 1A, VF<[email protected]
A
S
G
1 6
2 5
3 4
K
N/C
D
D
K
S
A
G
TSOP6
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
TA=25°C
Continuous Drain Current A
Pulsed Drain Current
TA=70°C
B
IDM
VKA
Schottky reverse voltage
TA=25°C
Continuous Forward Current
Pulsed Forward Current
ID
A
TA=70°C
B
MOSFET
TA=70°C
Power Dissipation
V
±8
3.8
V
3
A
10
IF
Junction and Storage Temperature Range
Parameter: Thermal Characteristics MOSFET
t ≤ 10s
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Thermal Characteristics Schottky
Steady-State
Steady-State
Maximum Junction-to-Ambient
A
t ≤ 10s
Maximum Junction-to-Ambient
Maximum Junction-to-Lead C
A
Steady-State
Steady-State
PD
TJ, TSTG
Symbol
RθJA
RθJL
RθJA
RθJL
Units
20
IFM
TA=25°C
Schottky
20
2
V
1
A
1.15
10
0.92
0.7
0.59
-55 to 150
-55 to 150
°C
Typ
Max
Units
80.3
110
117
43
150
80
109.4
135
136.5
58.5
175
80
W
°C/W
°C/W
AO6702
Electrical Characteristics (T J=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
TJ=55°C
5
Gate-Body leakage current
VDS=0V, VGS=±8V
Gate Threshold Voltage
VDS=VGS ID=250µA
0.4
ID(ON)
On state drain current
VGS=4.5V, VDS=5V
10
100
VGS=4.5V, ID=3.8A
VGS=2.5V, ID=3.3A
54
65
mΩ
VGS=1.8V, ID=2.8A
74
95
mΩ
VDS=5V, ID=3.8A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
V
A
80
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
Crss
nA
50
Forward Transconductance
Output Capacitance
1
63
gFS
Coss
0.6
µA
41.6
TJ=125°C
VSD
IS
Units
V
1
VGS(th)
Static Drain-Source On-Resistance
Max
20
VDS=16V, VGS=0V
IGSS
RDS(ON)
Typ
10.5
0.8
S
1
V
1.8
A
449
VGS=0V, VDS=10V, f=1MHz
mΩ
pF
74
pF
51.6
pF
VGS=0V, VDS=0V, f=1MHz
4.9
Ω
5.9
nC
VGS=4.5V, VDS=10V, ID=3.8A
0.36
nC
nC
Qgd
Gate Drain Charge
1.3
tD(on)
Turn-On DelayTime
4.5
ns
tr
Turn-On Rise Time
6
ns
tD(off)
Turn-Off DelayTime
32.7
ns
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
Qrr
Body Diode Reverse Recovery Charge
SCHOTTKY PARAMETERS
VF
Forward Voltage Drop
Irm
Maximum reverse leakage current
CT
Junction Capacitance
trr
Qrr
VGS=5V, VDS=10V, RL=2.6Ω,
RGEN=0Ω
7.1
ns
IF=3.8A, dI/dt=100A/µs
13
IF=3.8A, dI/dt=100A/µs
3.3
ns
nC
IF=0.5A
0.39
0.5
0.02
VR=16V
VR=16V, TJ=125°C
20
SchottkyReverse Recovery Time
VR=10V
IF=1A, dI/dt=100A/µs
5.2
34
Schottky Reverse Recovery Charge
IF=1A, dI/dt=100A/µs
0.8
V
mA
pF
10
ns
nC
2
A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value
in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
Rev3: August 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO6702
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
16
8V
VGS=5V
VGS =2.0V
8
25°C
125°C
6
8
ID(A)
ID(A)
12
VGS =1.5V
4
4
2
VGS =1.0V
0
0
0
1
2
3
4
5
0.0
0.5
VDS(Volts)
1.5
2.0
2.5
VGS(Volts)
Figure 2: Transfer Characteristics
Figure 1: On-Regions Characteristi cs
1.6
90
ID=3.8A
Normalize ON-Resistance
VGS =1.8V
80
RDS(ON)(mΩ)
1.0
70
VGS =2.5V
60
50
40
VGS =4.5V
1.4
VGS=1.8V
VGS=2.5V
1.2
VGS=4.5V
1.0
30
0
2
4
6
8
10
0.8
0
ID(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
90
1E+01
80
1E+00
70
1E-01
60
IS(A)
RDS(ON)(mΩ)
125°C
125°C
1E-02
1E-03
50
40
1E-04
25°C
25°C
1E-05
30
0
2
4
6
8
VGS(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
10
0.0
0.2
0.4
0.6
0.8
VSD(Volts)
Figure 6: Body-Diode Characteristics
1.0
AO6702
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
6
800
VDS=4.5V
ID=3.8A
700
Capacitance (pF )
VGS(Volt s)
5
4
3
2
1
600
Ciss
500
400
Crss
300
200
100
Coss
0
0
0
1
2
3
4
5
6
0
7
RDS(ON)
limited
15
20
10
10µs
100µs
0.1s
1ms
1s
1
10s
TJ(Max) =150°C
TA =25°C
0.1
Power (W)
ID(A)
10
10ms
8
6
4
2
DC
0
1
10
100
0.001
VDS(Volts)
Figure 9: Maximum Forward Biased Safe Operating
Area (Note E)
10
ZθJA Normalized Transient
Thermal Resistance
10
12
100
0.1
5
VDS(Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=110°C/W
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
0.01
Pulse
0.00001 Single0.0001
0.001
0.01
0.1
1
10
Pulse Width (S)
Figure 11: Normalized Maximum Transient Thermal Impedence
Alpha & Omega Semiconductor, Ltd.
T
100
1000
AO6702
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: SCHOTTKY
100
1.0E+01
125°C
f = 1MHz
80
Capacitance (pF)
IF (Amps)
1.0E+00
1.0E-01
1.0E-02
60
40
20
25°C
1.0E-03
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
1.4
0
VF (Volts)
Figure 12: Schottky Forward Characteristics
10
15
20
VKA (Volts)
Figure 13: Schottky Capacitance Characteristics
0.5
Leakage Current (A)
1.0E-02
0.4
VF (Volts)
5
IF=0.5A
0.3
0.2
1.0E-03
VR=16V
1.0E-04
1.0E-05
1.0E-06
0.1
0
25
50
75
100
Temperature (°C)
125
0
150
25
50
75
100
125
150
Temperature (°C)
Figure 15: Schottky Leakage current vs. Junction
Temperature
Figure 14: Schottky Forward Drop vs.
Junction Temperature
ZθJA Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=135°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
PD
0.1
Ton
Single Pulse
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 15: Schottky Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
100
1000
Similar pages