AO7408 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO7408 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V, in the small SOT323 footprint. It can be used for a wide variety of applications, including load switching, low current inverters and low current DC-DC converters. Standard Product AO7408 is Pb-free (meets ROHS & Sony 259 specifications). AO7408L is a Green Product ordering option. AO7408 and AO7408L are electrically identical. VDS (V) = 20V ID = 2.2 A (VGS = 4.5V) RDS(ON) < 82mΩ (VGS = 4.5V) RDS(ON) < 95mΩ (VGS = 2.5V) RDS(ON) < 120mΩ (VGS = 1.8V) D SC-70-6 (SOT-323) Top View D D S D D G G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A TA=25°C TA=25°C Junction and Storage Temperature Range A Alpha Omega Semiconductor, Ltd. V 10 W 0.4 TJ, TSTG t ≤ 10s Steady-State Steady-State A 0.625 -55 to 150 Symbol A ±8 1.75 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead C Units V 2.2 ID IDM TA=70°C Pulsed Drain Current B Power Dissipation A Maximum 20 RθJA RθJL Typ 160 180 130 °C Max 200 220 160 Units °C/W °C/W °C/W AO7408 Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Min Conditions ID=250µA, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS=±8V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 0.4 ID(ON) On state drain current VGS=4.5V, VDS=5V 10 Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge 0.8 V A VGS=2.5V, ID=2.0A 78 95 mΩ VGS=1.8V, ID=1A 96 120 mΩ VDS=5V, ID=1.6A DYNAMIC PARAMETERS Ciss Input Capacitance Rg nA 82 Forward Transconductance Reverse Transfer Capacitance 100 125 Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current Crss 0.6 µA 67 VSD Output Capacitance 5 99 TJ=125°C gFS Coss V TJ=55°C VGS=4.5V, ID=2.2A IS Units 1 Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max 20 VDS=16V, VGS=0V IDSS RDS(ON) Typ VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=4.5V, VDS=10V, ID=2.2A 6.7 0.69 mΩ S 1 V 0.91 A 499 pF 65 pF 56 pF 3 Ω 6.02 nC 0.41 nC Qgd Gate Drain Charge 1.35 nC tD(on) Turn-On DelayTime 6.5 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time VGS=5V, VDS=10V, RL=4.5Ω, RGEN=6Ω 8 ns 61 ns 16 ns trr Body Diode Reverse Recovery Time IF=2.2A, dI/dt=100A/µs 23.2 Qrr Body Diode Reverse Recovery Charge IF=2.2A, dI/dt=100A/µs 8.6 ns nC A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev 2 : June 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha Omega Semiconductor, Ltd. AO7408 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 16 8V VDS=5V 4.5V 8 25°C 3V 2.5V 8 6 4 4 VGS=1.5V 2 0 0 0 1 2 3 4 5 0 0.5 140 1.5 Normalized On-Resistance 1.8 120 RDS(ON) (mΩ) 1 2 2.5 3 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics VGS=1.8V 100 VGS=2.5V 80 VGS=4.5V 60 VGS=2.5V ID=2.0A VGS=1.8V 1.6 ID=1.0A 1.4 VGS=4.5V ID=2.2A 1.2 1 0.8 0 2 4 6 8 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 180 1E+01 1E+00 160 125°C ID=2.2A 1E-01 120 IS (A) 140 RDS(ON) (mΩ) 125°C 2V ID(A) ID (A) 12 125°C 1E-02 25°C 1E-03 100 25°C 80 1E-04 1E-05 60 1 2 3 4 5 6 7 8 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics 1.4 AO7408 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1000 5 VDS=10V ID=2.2A 800 Capacitance (pF) VGS (Volts) 4 3 2 Ciss 600 400 Coss 0 0 0 1 2 3 4 5 6 0 7 100.0 10 16 TJ(Max)=150°C TA=25°C 15 20 TJ(Max)=150°C TA=25°C 100µs 12 RDS(ON) limited Power (W) 10.0 5 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics ID (Amps) Crss 200 1 10µs 10ms 1ms 0.1s 1.0 8 4 1s 0.1 0.1 10s DC 1 10 0 0.001 100 VDS (Volts) ZθJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=360°C/W 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 0.01 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha Omega Semiconductor, Ltd. 100 1000