AOT262L/AOB262L 60V N-Channel MOSFET General Description Product Summary The AOT262L/AOB262L combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. VDS 60V 140A ID (at VGS=10V) < 3.0mΩ (< 2.8mΩ∗) RDS(ON) (at VGS=10V) < 3.2mΩ (< 3.0mΩ∗) RDS(ON) (at VGS = 6V) 100% UIS Tested 100% Rg Tested TO-263 TO220 Top View Top View Bottom View D D2PAK D Bottom View D D D G G D S S D G G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G TC=25°C Pulsed Drain Current C Continuous Drain Current Maximum 60 Units V ±20 V A 500 20 IDSM TA=70°C S S 110 IDM TA=25°C G 140 ID TC=100°C S A 16 Avalanche Current C IAS, IAR 115 A Avalanche energy L=0.1mH C EAS, EAR 661 mJ TC=25°C Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range 2.1 Steady-State Steady-State RθJA RθJC W 1.3 TJ, TSTG Symbol t ≤ 10s W 167 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 333 PD TC=100°C -55 to 175 Typ 12 48 0.35 °C Max 15 60 0.45 Units °C/W °C/W °C/W * Surface mount package TO263 Rev0 : Nov 2010 www.aosmd.com Page 1 of 6 AOT262L/AOB262L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Min Conditions ID=250µA, VGS=0V VDS=60V, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage On state drain current VDS=VGS ID=250µA 2.2 VGS=10V, VDS=5V 500 TJ=55°C 5 100 RDS(ON) Static Drain-Source On-Resistance TJ=125°C Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs Gate Source Charge 3.6 2 2.8 VGS=6V, ID=20A TO263 VDS=5V, ID=20A 2.3 80 3 0.65 1 V 140 A DYNAMIC PARAMETERS Ciss Input Capacitance Reverse Transfer Capacitance 3 3.2 Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current G Crss V A 2.5 VSD Output Capacitance nA VGS=10V, ID=20A TO263 Forward Transconductance Coss 3.2 µA VGS=6V, ID=20A TO220 gFS IS 2.7 2.2 VGS=10V, ID=20A Units V 1 Zero Gate Voltage Drain Current TO220 Max 60 IDSS ID(ON) Typ VGS=0V, VDS=30V, f=1MHz VGS=0V, VDS=0V, f=1MHz mΩ S 6500 8140 9800 pF 830 1040 1350 pF 25 32 55 pF 0.5 1 1.5 Ω 75 95 115 nC VGS=10V, VDS=30V, ID=20A 30 nC Qgd Gate Drain Charge 5 nC tD(on) Turn-On DelayTime 27 ns tr Turn-On Rise Time 22 ns tD(off) Turn-Off DelayTime 47 ns tf Turn-Off Fall Time 8 ns VGS=10V, VDS=30V, RL=1.5Ω, RGEN=3Ω trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 21 30 39 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 130 185 240 ns nC A. The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev0 : Nov 2010 www.aosmd.com Page 2 of 6 AOT262L/AOB262L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 10V 6V 80 VDS=5V 80 4.5V 60 ID(A) ID (A) 60 40 4V 40 125°C 25°C 20 20 Vgs=3.5V 0 0 0 1 2 3 4 1 5 3 4 5 6 2.2 Normalized On-Resistance RDS(ON) (mΩ) 6 4 VGS=4.5V 2 VGS=10V 2 VGS=10V ID=20A 1.8 17 VGS=6V 5 ID=20A 2 10 1.6 1.4 1.2 1 0.8 0 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 200 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 1.0E+02 8 ID=20A 1.0E+01 40 6 1.0E+00 125°C IS (A) RDS(ON) (mΩ) 2 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 4 125°C 1.0E-01 25°C 1.0E-02 1.0E-03 2 1.0E-04 25°C 0 1.0E-05 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev0 : Nov 2010 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AOT262L/AOB262L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 10000 VDS=30V ID=20A 8000 Capacitance (pF) VGS (Volts) 8 6 4 Ciss 6000 4000 Coss 2 2000 0 0 Crss 0 10 20 30 40 50 60 70 80 90 Qg (nC) Figure 7: Gate-Charge Characteristics 100 0 30 40 50 VDS (Volts) Figure 8: Capacitance Characteristics 60 10µs 10µs 1ms 10ms 10.0 DC 1.0 TJ(Max)=175°C TC=25°C 0.0 0.01 0.1 1 VDS (Volts) 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 17 5 2 10 400 300 10 100 200 0.001 0.01 0.1 0 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=0.45°C/W PD 0.1 Ton 0.01 0.00001 1 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 TJ(Max)=175°C TC=25°C 500 100µs Power (W) ID (Amps) RDS(ON) limited 0.1 ZθJC Normalized Transient Thermal Resistance 20 600 1000.0 100.0 10 Single Pulse 0.0001 0.001 0.01 T 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev0 : Nov 2010 www.aosmd.com Page 4 of 6 AOT262L/AOB262L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 400 TA=25°C Power Dissipation (W) IAR (A) Peak Avalanche Current 1000 TA=100°C 100 TA=150°C TA=125°C 10 300 200 100 0 0 1 10 100 1000 Time in avalanche, tA (µs) Figure 12: Single Pulse Avalanche capability (Note C) 50 75 100 125 150 TCASE (°C) Figure 13: Power De-rating (Note F) 175 1000 TA=25°C 120 Power (W) Current rating ID(A) 150 25 90 60 100 17 5 2 10 10 30 0 0 25 50 75 100 125 150 TCASE (°C) Figure 14: Current De-rating (Note F) 175 1 0.001 0.1 10 0 1000 Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) ZθJA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=60°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 0.1 PD 0.01 Ton Single Pulse 0.001 0.01 0.1 1 10 T 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev0 : Nov 2010 www.aosmd.com Page 5 of 6 AOT262L/AOB262L Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - VDC DUT Qgs Qgd - Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC Rg - 10% Vgs Vgs t d(on) tr t d(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs VDC Rg - I AR Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev0 : Nov 2010 Vgs L Isd + Vdd VDC - IF t rr dI/dt I RM Vdd Vds www.aosmd.com Page 6 of 6