AOB428 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOB428 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in high voltage synchronous rectification , load switching and general purpose applications. Standard Product AOB428 is Pb-free (meets ROHS & Sony 259 specifications). AOB428L is a Green Product ordering option. AOB428 and AOB428L are electrically identical. VDS (V) = 105V ID = 40 A RDS(ON) < 28 mΩ (VGS =10V) @ 20A RDS(ON) < 31 mΩ (VGS = 6V) TO-263 D2-PAK D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TC=25°C Continuous Drain Current Avalanche Current C C Repetitive avalanche energy L=0.1mH C TC=25°C Power Dissipation B Junction and Storage Temperature Range Alpha Omega Semiconductor, Ltd. V A 28 100 IAR 40 A EAR 80 mJ 100 2.5 W 1.6 TJ, TSTG -55 to 175 Symbol t ≤ 10s Steady-State Steady-State W 50 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case B ±25 ID IDM PD TC=100°C TA=25°C Power Dissipation A Units V 40 TC=100°C Pulsed Drain Current Maximum 105 RθJA RθJC Typ 9 40 1 °C Max 11 50 1.5 Units °C/W °C/W °C/W AOB428 Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Conditions Min ID=10mA, VGS=0V 105 1 TJ=55°C 5 Gate-Body leakage current VDS=0V, VGS=±25V Gate Threshold Voltage VDS=VGS, ID=250µA 2.5 ID(ON) On state drain current VGS=10V, VDS=5V 100 100 VGS=10V, ID=20A 53 VGS=6V, ID=20A 25 31 VDS=5V, ID=20A 50 Forward Transconductance VSD Diode Forward Voltage IS=1A, VGS=0V Maximum Body-Diode Continuous Current TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time Units µA nA V A 44 gFS Crss 4 28 Static Drain-Source On-Resistance Output Capacitance 3.2 22.7 RDS(ON) Coss Max V VDS=84V, VGS=0V VGS(th) IS Typ 0.73 2038 mΩ mΩ S 1 V 55 A 2445 pF VGS=0V, VDS=25V, f=1MHz 204 VGS=0V, VDS=0V, f=1MHz 1.3 1.56 Ω 38.5 46 nC pF 85 VGS=10V, VDS=50V, ID=30A VGS=10V, VDS=50V, RL=2.7Ω, RGEN=3Ω pF 7.7 nC 13.4 nC 12.7 ns 8.2 ns 31.5 ns 11.2 ns trr Body Diode Reverse Recovery Time IF=30A, dI/dt=100A/µs 61.6 Qrr Body Diode Reverse Recovery Charge IF=30A, dI/dt=100A/µs 172.4 74 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. Rev0: Sept2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AOB428 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 25 10V 80 60 15 ID(A) ID (A) VDS=5V 20 6V 40 125°C 10 5V 20 25°C 5 VGS=4.5V 0 0 0 1 2 3 4 5 2 VDS (Volts) Fig 1: On-Region Characteristics 3 3.5 4 4.5 5 VGS(Volts) Figure 2: Transfer Characteristics 40 2.4 Normalized On-Resistance RDS(ON) (mΩ) 2.5 VGS=6V 30 20 VGS=10V 10 0 10 20 30 2.2 VGS=10V, 20A 2 1.8 1.6 VGS=6V,20A 1.4 1.2 1 0.8 40 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+02 60 1.0E+01 125°C 125°C 1.0E+00 IS (A) RDS(ON) (mΩ) 50 ID=20A 40 1.0E-01 1.0E-02 25°C 30 1.0E-03 25°C 1.0E-04 20 4 8 12 16 20 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AOB428 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3 10 VDS=50V ID=20A Ciss Capacitance (nF) VGS (Volts) 8 6 4 2 1 Coss 2 0 Crss 0 0 10 20 30 40 0 20 40 60 80 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 1000 100 300 TJ(Max)=175°C, TA=25°C TJ(Max)=175°C TA=25°C 10µs 10 DC RDS(ON) limited 100µs Power (W) ID (Amps) 100 1ms, DC 200 100 1 0 0.0001 0.1 0.1 1 10 100 1000 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) ZθJC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJC.RθJC RθJC=1.5°C/W 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. 0.1 AOB428 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 150 L ⋅ ID tA = BV − V DD 40 Power Dissipation (W) ID(A), Peak Avalanche Current 60 TA=25°C TA=150°C 20 0 0.000001 100 50 0 0.00001 0.0001 0.001 0 25 50 75 100 125 150 175 TCASE (°C) Figure 13: Power De-rating (Note B) 50 100 40 80 Power (W) Current rating ID(A) Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability 30 20 60 40 20 10 0 0.01 0 0 25 50 75 100 125 150 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) 175 TCASE (°C) Figure 14: Current De-rating (Note B) ZθJA Normalized Transient Thermal Resistance 100 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=50°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD 0.01 0.001 0.00001 Single Pulse 0.0001 0.001 Ton 0.01 0.1 1 T 10 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Alpha & Omega Semiconductor, Ltd. 100 1000