AOSMD AOB42S60 600v 37a a mos power transistor Datasheet

AOT42S60/AOB42S60
600V 37A α MOS TM Power Transistor
General Description
Product Summary
The AOT42S60 & AOB42S60 have been fabricated using
the advanced αMOSTM high voltage process that is
designed to deliver high levels of performance and
robustness in switching applications.
By providing low RDS(on), Qg and EOSS along with
guaranteed avalanche capability these devices can be
adopted quickly into new and existing offline power supply
designs.
VDS @ Tj,max
700V
IDM
166A
RDS(ON),max
0.109Ω
Qg,typ
40nC
Eoss @ 400V
9.2µJ
100% UIS Tested
100% Rg Tested
For Halogen Free add "L" suffix to part number:
AOT42S60L & AOB42S60L
Top View
TO-263
D2PAK
TO-220
G
D
D
S
G
S
S
G
AOT42S60
AOB42S60
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Parameter
AOT42S60/AOB42S60
VDS
Drain-Source Voltage
600
Gate-Source Voltage
Continuous Drain
Current
VGS
TC=25°C
TC=100°C
±30
Units
V
V
37
ID
23
A
Pulsed Drain Current C
IDM
Avalanche Current C
IAR
11
A
Repetitive avalanche energy C
EAR
234
mJ
Single pulsed avalanche energy G
EAS
1345
mJ
TC=25°C
Power Dissipation B Derate above 25oC
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt H
Junction and Storage Temperature Range
166
PD
dv/dt
TJ, TSTG
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds J
TL
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A,D
Symbol
RθJA
Maximum Case-to-sink A
Maximum Junction-to-Case
Rev3: Nov 2012
RθCS
RθJC
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417
W
3.3
100
20
-55 to 150
W/ oC
300
°C
AOT42S60/AOB42S60
Units
65
°C/W
0.5
0.3
°C/W
°C/W
V/ns
°C
Page 1 of 6
AOT42S60/AOB42S60
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
ID=250µA, VGS=0V, TJ=25°C
600
-
-
ID=250µA, VGS=0V, TJ=150°C
650
700
-
V
µA
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
VDS=600V, VGS=0V
-
-
1
VDS=480V, TJ=150°C
-
10
-
IGSS
Gate-Body leakage current
VDS=0V, VGS=±30V
-
-
±100
VGS(th)
Gate Threshold Voltage
VDS=5V,ID=250µA
2.5
3.2
3.8
nΑ
V
RDS(ON)
Static Drain-Source On-Resistance
VSD
Diode Forward Voltage
IS
ISM
VGS=10V, ID=21A, TJ=25°C
-
0.095
0.109
Ω
VGS=10V, ID=21A, TJ=150°C
-
0.27
0.31
Ω
IS=21A,VGS=0V, TJ=25°C
-
0.84
-
V
Maximum Body-Diode Continuous Current
-
-
37
A
Maximum Body-Diode Pulsed Current
-
-
166
A
-
2154
-
pF
-
135
-
pF
-
103
-
pF
-
344
-
pF
VGS=0V, VDS=100V, f=1MHz
-
2.7
-
pF
VGS=0V, VDS=0V, f=1MHz
-
1.7
-
Ω
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Coss
Output Capacitance
Co(er)
Effective output capacitance, energy
related H
Crss
Effective output capacitance, time
related I
Reverse Transfer Capacitance
Rg
Gate resistance
Co(tr)
VGS=0V, VDS=100V, f=1MHz
VGS=0V, VDS=0 to 480V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
Qg
-
40
-
nC
-
11.7
-
nC
Gate Drain Charge
-
11.9
-
nC
Turn-On DelayTime
-
38.5
-
ns
-
53
-
ns
-
136
-
ns
-
46
-
ns
Qgs
Gate Source Charge
Qgd
tD(on)
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
VGS=10V, VDS=480V, ID=21A
VGS=10V, VDS=400V, ID=21A,
RG=25Ω
Body Diode Reverse Recovery Time
Peak Reverse Recovery Current
IF=21A,dI/dt=100A/µs,VDS=400V
-
473
-
ns
Irm
IF=21A,dI/dt=100A/µs,VDS=400V
-
38.5
-
Qrr
Body Diode Reverse Recovery Charge IF=21A,dI/dt=100A/µs,VDS=400V
-
10.5
-
A
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ
=25°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G. L=60mH, IAS=6.7A, VDD=150V, Starting TJ=25°C
H. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS.
I. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS.
J. Wavesoldering only allowed at leads.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev3: Nov 2012
www.aosmd.com
Page 2 of 6
AOT42S60/AOB42S60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
80
10V
10V
70
7V
50
60
6V
ID (A)
ID (A)
50
40
5.5V
30
5V
10
5V
VGS=4.5V
10
5.5V
30
20
20
VGS=4.5V
0
0
0
5
10
15
0
20
5
10
15
20
VDS (Volts)
Figure 2: On-Region Characteristics@125°C
VDS (Volts)
Figure 1: On-Region Characteristics@25°C
1000
0.30
-55°C
VDS=20V
0.25
100
125°C
RDS(ON) (Ω )
0.20
ID(A)
10
1
25°C
0.1
VGS=10V
0.15
0.10
0.05
0.00
0.01
2
3
4
5
6
7
8
9
0
10
VGS(Volts)
Figure 3: Transfer Characteristics
15
30
45
60
75
90
ID (A)
Figure 4: On-Resistance vs. Drain Current and
Gate Voltage
1.2
3
2.5
VGS=10V
ID=21A
2
BVDSS (Normalized)
Normalized On-Resistance
6V
7V
40
1.5
1
1.1
1
0.9
0.5
0
-100
-50
0
50
100
150
200
Temperature (°C)
Figure 5: On-Resistance vs. Junction Temperature
Rev3: Nov 2012
www.aosmd.com
0.8
-100
-50
0
50
100
150
200
TJ (oC)
Figure 6: Break Down vs. Junction Temperature
Page 3 of 6
AOT42S60/AOB42S60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
1.0E+02
1.0E+01
12
VDS=480V
ID=21A
125°C
1.0E-01
25°C
VGS (Volts)
IS (A)
1.0E+00
1.0E-02
1.0E-03
9
6
3
1.0E-04
1.0E-05
0.0
0.2
0.4
0.6
0.8
0
1.0
0
15
30
45
60
Qg (nC)
Figure 8: Gate-Charge Characteristics
VSD (Volts)
Figure 7: Body-Diode Characteristics (Note E)
10000
20
16
1000
Eoss(uJ)
Capacitance (pF)
Ciss
Coss
100
Eoss
12
8
Crss
10
4
0
1
0
100
200
300
400
500
VDS (Volts)
Figure 9: Capacitance Characteristics
600
0
100
200
300
400
VDS (Volts)
Figure 10: Coss stored Energy
500
600
1000
ID (Amps)
100
10µs
RDS(ON)
limited
10
100µs
1ms
10ms
1
DC
TJ(Max)=150°C
TC=25°C
0.1
0.01
0.1
1
10
100
1000
VDS (Volts)
Figure 11: Maximum Forward Biased Safe
Operating Area for AOT(B)42S60(Note F)
Rev3: Nov 2012
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Page 4 of 6
AOT42S60/AOB42S60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
1500
35
Current rating ID(A)
EAS(mJ)
1200
900
600
300
30
25
20
15
10
5
0
0
25
50
75
100
125
150
175
0
25
75
100
125
TCASE (°C)
Figure 13: Current De-rating (Note B)
TCASE (°C)
Figure 12: Avalanche energy
50
150
Zθ JC Normalized Transient
Thermal Resistance
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=0.3°C/W
0.1
PD
0.01
Ton
Single Pulse
0.001
0.000001
0.00001
0.0001
0.001
0.01
T
0.1
1
10
Pulse Width (s)
Figure 14: Normalized Maximum Transient Thermal Impedance for AOT(B)42S60(Note F)
Rev3: Nov 2012
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Page 5 of 6
AOT42S60/AOB42S60
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
DUT
-
Vgs
Ig
Charge
Res istive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
+
VDC
90%
Vdd
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LI
Vds
2
AR
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Tes t Circuit & Waveforms
Qrr = - Idt
Vds +
DUT
Vgs
Vds -
Isd
Vgs
Ig
Rev3: Nov 2012
L
Isd
+
VDC
-
IF
trr
dI/dt
IRM
Vdd
Vdd
Vds
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Page 6 of 6
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