AOB434 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOB434 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard product AOB434 is Pb-free (meets ROHS & Sony 259 specifications). AOB434L is a Green Product ordering option. AOB434 and AOB434L are electrically identical. VDS (V) =25V ID = 55 A (VGS = 10V) RDS(ON) < 9.5 mΩ (VGS = 10V) RDS(ON) < 15 mΩ (VGS = 4.5V) TO-263 D2-PAK D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TC=25°C Continuous Drain Current G C C Repetitive avalanche energy L=0.1mH C TC=25°C Power Dissipation B Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. V A 100 IAR 30 A EAR 135 mJ 55 50 3 W 2.1 TJ, TSTG °C -55 to 175 Symbol t ≤ 10s Steady-State Steady-State W 25 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case B ±20 ID IDM PD TC=100°C TA=25°C Power Dissipation A Units V 55 TC=100°C Pulsed Drain Current Avalanche Current Maximum 25 RθJA RθJC Typ 11 42 2.4 Max 17 50 3 Units °C/W °C/W °C/W AOB434 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250uA, VGS=0V Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250µA ID(ON) On state drain current VGS=10V, VDS=5V TJ=125°C gFS Forward Transconductance VSD IS=1A, VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current VDS=5V, ID=30A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge µA 100 nA 1.8 3 V 7.3 9.5 10 12 12 15 mΩ 1 V 55 A 1476 pF 100 VGS=4.5V, ID=20A IS V 5 1 VGS=10V, ID=30A Static Drain-Source On-Resistance Units 1 TJ=55°C VGS(th) Max 25 VDS=20V, VGS=0V IGSS RDS(ON) Typ A 52 0.74 1230 VGS=0V, VDS=12.5V, f=1MHz mΩ S 315 pF 190 VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=12.5V, ID=30A pF 1.2 2 Ω 25.6 30 nC 12.7 nC Qgs Gate Source Charge 5 nC Qgd Gate Drain Charge 7.4 nC tD(on) Turn-On DelayTime 6.5 ns tr Turn-On Rise Time 34 ns tD(off) Turn-Off DelayTime 18 ns tf Turn-Off Fall Time 21 ns trr Qrr VGS=10V, VDS=12.5V, RL=0.39Ω, RGEN=3Ω IF=30A, dI/dt=100A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=30A, dI/dt=100A/µs 28 34 14 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation P DSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175°C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. Rev 0 : Aug 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AOB434 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 60 5V 10V 4.5V 6V 80 VDS=5V 50 7V 40 ID (A) 60 ID(A) VGS=4V 30 125°C 40 20 25°C 3.5V 20 10 3V 0 0 0 1 2 3 4 0 5 1 2 3 4 5 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics 18 1.8 16 RDS(ON) (mΩ) Normalized On-Resistance VGS=4.5V 14 12 10 8 6 VGS=10V 4 2 1.6 VGS=10V, 30A 1.4 1.2 VGS=4.5V, 20A 1 0 0 10 0.8 20 30 40 50 60 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 0 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+02 30 ID=30A 1.0E+01 25 1.0E+00 20 IS (A) RDS(ON) (mΩ) 25 125°C 15 10 125°C 1.0E-01 1.0E-02 25°C 1.0E-03 25°C 5 1.0E-04 1.0E-05 0 4 5 6 7 8 9 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AOB434 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 2000 Ciss 1600 Capacitance (pF) VGS (Volts) 1800 VDS=12.5V ID=30A 8 6 4 1400 1200 1000 800 Coss 600 400 2 200 0 5 10 15 20 25 Qg (nC) Figure 7: Gate-Charge Characteristics 0 30 10 15 20 VDS (Volts) Figure 8: Capacitance Characteristics 25 TJ(Max)=175°C, TA=25°C 10µs 100.0 160 100µs 1ms Power (W) RDS(ON) limited ID (Amps) 5 200 1000.0 10.0 10ms TJ(Max)=175°C TA=25°C 120 80 DC 1.0 40 0 0.1 0.1 1 10 100 VDS (Volts) 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=3°C/W 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) ZθJC Normalized Transient Thermal Resistance Crss 0 0 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. 10 100 AOB434 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 50 L ⋅ ID BV − VDD tA = 40 Power Dissipation (W) ID(A), Peak Avalanche Current 60 30 20 TA=25°C 10 50 40 30 20 10 0 0 0.00001 0.0001 0 0.001 25 50 50 40 40 Power (W) Current rating ID(A) 60 30 20 75 100 125 150 175 TA=25°C 30 20 10 10 0 0 0 25 50 75 100 125 150 175 0.001 TCASE (°C) Figure 14: Current De-rating (Note B) 10 ZθJA Normalized Transient Thermal Resistance 50 TCASE (°C) Figure 13: Power De-rating (Note B) Time in avalanche, t A (s) Figure 12: Single Pulse Avalanche capability 1 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=50°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Alpha & Omega Semiconductor, Ltd. 100 1000