AOC2414 8V N-Channel MOSFET General Description Product Summary The AOC2414 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.2V while retaining a 5V VGS(MAX) rating. VDS 8V 4.5A ID (at VGS=2.5V) RDS(ON) (at VGS=2.5V) < 19mΩ RDS(ON) (at VGS=1.8V) < 21mΩ RDS(ON) (at VGS=1.5V) < 24mΩ RDS(ON) (at VGS=1.2V) < 29mΩ Typical ESD protection MCSP 1.57x1.57_4 Top View HBM Class 2 D Bottom View Top View Bottom View 3 2 D D S G G Pin1(G) 4 1 S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Source Current (DC) Note1 TA=25°C Source Current (Pulse) Note2 TA=25°C Power Dissipation Note1 Junction and Storage Temperature Range VGS ID Rev 0 : Nov. 2012 ±5 V A 60 TJ, TSTG www.aosmd.com Units V 4.5 IDM PD Thermal Characteristics Parameter Symbol t ≤ 10s Maximum Junction-to-Ambient A RθJA Maximum Junction-to-Ambient A D Steady-State Note 1. Mounted on minimum pad PCB Note 2. PW <300 µs pulses, duty cycle 0.5% max Maximum 8 Typ 140 190 0.55 W -55 to 150 °C Max 170 230 Units °C/W °C/W Page 1 of 5 AOC2414 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V Gate-Body leakage current VDS=0V, VGS=±5V Gate Threshold Voltage VDS=VGS ID=250µA VGS=2.5V, ID=1.5A TJ=125°C Static Drain-Source On-Resistance 24 mΩ 21 29 mΩ 30 1 V VGS=0V, VDS=4V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Gate Source Charge mΩ 18 DYNAMIC PARAMETERS Input Capacitance Ciss Qgs 19 24 VGS=1.2V, ID=1A IS=1A,VGS=0V Gate resistance 15.5 19.5 mΩ Diode Forward Voltage Reverse Transfer Capacitance V 21 VSD Rg µA 0.8 16.5 VDS=5V, ID=1.5A Crss ±10 VGS=1.8V, ID=1A Forward Transconductance Output Capacitance 0.52 VGS=1.5V, ID=1A gFS Coss µA 5 0.2 Units V 1 TJ=55°C VGS(th) Max 8 VDS=8V, VGS=0V IGSS RDS(ON) Typ 0.54 2042 pF 600 pF 298 pF 2.4 KΩ 21.5 VGS=4.5V, VDS=4V, ID=1.5A S 32 nC 10.5 nC Qgd Gate Drain Charge 4.5 nC tD(on) Turn-On DelayTime 2.5 µs tr Turn-On Rise Time 4 µs tD(off) Turn-Off DelayTime 5 µs tf Turn-Off Fall Time 8 µs trr Body Diode Reverse Recovery Time IF=1.5A, dI/dt=100A/µs 20 Qrr Body Diode Reverse Recovery Charge IF=1.5A, dI/dt=100A/µs 10 ns nC VGS=2.5V, VDS=4V, RL=2.67Ω, RGEN=3Ω THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0: Nov. 2012 www.aosmd.com Page 2 of 5 AOC2414 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50 50 4.5V VDS=5V 2.0V 40 40 2.5V 1.5V 30 ID(A) ID (A) 30 20 20 VGS=1.0V 10 10 125°C 25°C 0 0 0 1 2 3 4 0 5 30 1 1.5 2 2.5 Normalized On-Resistance 1.4 25 RDS(ON) (mΩ Ω) 0.5 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics VGS=1.2V VGS=1.5V 20 15 VGS=2.5V VGS=1.8V 10 5 VGS=2.5V ID=1.5A VGS=1.8V ID=1A 1.2 VGS=1.5V ID=1A 1 VGS=1.2V ID=1A 0.8 0 0 1 0 2 3 4 5 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 30 1.0E+01 ID=1.5A 1.0E+00 125°C 1.0E-01 125°C 20 IS (A) RDS(ON) (mΩ Ω) 25 1.0E-02 15 1.0E-03 25°C 25°C 10 1.0E-04 5 1.0E-05 0 2 3 4 5 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 0: Nov. 2012 1 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 5 AOC2414 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 3000 VDS=4V ID=1.5A 2500 4 Capacitance (pF) VGS (Volts) Ciss 3 2 2000 1500 Coss 1000 1 500 Crss 0 0 5 10 15 20 Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 0 4 6 VDS (Volts) Figure 8: Capacitance Characteristics 1ms 10ms 1.0 TJ(Max)=150°C TA=25°C 8 TJ(Max)=150°C TA=25°C 40 RDS(ON) limited 0.1 2 50 10µs 100µs 10.0 -ID (Amps) 25 Power (W) 0 10s DC 30 20 10 0 0.0 0.00001 0.01 0.1 1 -VDS (Volts) 10 0.001 0.1 10 1000 100 Pulse Width (s) Figure 9: Maximum Forward Biased Safe Operating Area Figure 10: Single Pulse Power Rating Junction-toAmbient Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=200°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Rev 0: Nov. 2012 www.aosmd.com Page 4 of 5 AOC2414 Rev 0: Nov. 2012 www.aosmd.com Page 5 of 5