AOD406 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD406 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics. This device is ideally suited for use as a low side switch in CPU core power conversion. Standard Product AOD406 is Pb-free (meets ROHS & Sony 259 specifications). AOD406L is a Green Product ordering option. AOD406 and AOD406L are electrically identical. VDS (V) = 30V ID = 85A (VGS = 10V) RDS(ON) < 5.0mΩ (VGS = 10V) RDS(ON) < 5.7mΩ (VGS = 4.5V) TO-252 D-PAK D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,G TC=25°C G Pulsed Drain Current Avalanche Current C C TC=25°C Power Dissipation B V Junction and Storage Temperature Range 200 IAR 30 A EAR 140 mJ 100 W 50 2.5 W 1.6 TJ, TSTG -55 to 175 Symbol t ≤ 10s Steady-State Steady-State Alpha & Omega Semiconductor, Ltd. A 75 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient Maximum Junction-to-Lead C ±12 ID IDM PD TC=100°C TA=25°C Power Dissipation A Units V 85 TC=100°C B Repetitive avalanche energy L=0.1mH Maximum 30 RθJA RθJL Typ 14.2 40 0.56 °C Max 20 50 1.5 Units °C/W °C/W °C/W AOD406 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VGS(th) Gate Threshold Voltage On state drain current ID(ON) RDS(ON) gFS VSD IS ID=250µA, VGS=0V VDS=24V, VGS=0V 30 VDS=0V, VGS= ±12V VDS=VGS ID=250µA 0.8 VGS=4.5V, VDS=5V VGS=10V, ID=20A Max 0.005 1 5 TJ=125°C VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=4.5V, VDS=15V, ID=20A Gate Drain Charge VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω IF=20A, dI/dt=100A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs Units µA 100 nA 1.1 1.5 V 4 5.8 5 7 mΩ 4.6 5.7 mΩ 1 85 S V A V 100 Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Typ TJ=55°C VGS=4.5V, ID=20A Forward Transconductance VDS=5V, ID=20A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current SWITCHING PARAMETERS Qg(4.5V) Total Gate Charge Qgs Gate Source Charge tD(off) tf trr Qrr Min Static Drain-Source On-Resistance DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Qgd tD(on) tr Conditions A 102 0.64 9130 625 387 0.4 10500 0.5 pF pF pF Ω 72.4 85 nC 13.4 16.8 14.7 22 nC nC ns 14.2 105.5 23.5 30.5 21 21 150 35 40 33 ns ns ns ns nC 2 A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on steady-state R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature fo 175°C may be used if the PCB or heatsink allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. 2 F. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by the package current capability. Rev 1: Sept 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. AOD406 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 60 10V 50 80 VDS=5V 4.5V 40 3.0V ID(A) 60 ID(A) 2.5V 40 30 VGS=2V 20 20 125°C 10 0 0 1 2 3 4 0 5 0 0.5 VDS (Volts) Figure 1: On-Region Characteristics 1 1.5 2 2.5 VGS(Volts) Figure 2: Transfer Characteristics 5.0 Normalized On-Resistance 1.8 VGS=4.5V 4.5 RDS(ON) (mΩ) 25°C 4.0 VGS=10V 3.5 3.0 0 20 40 60 80 VGS=4.5V ID=20A 1.6 VGS=10V 1.4 1.2 1 0.8 100 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+02 16 1.0E+01 1.0E+00 ID=20A 125°C 8 IS (A) RDS(ON) (mΩ) 12 125°C 1.0E-01 1.0E-02 1.0E-03 4 25°C 25°C 1.0E-04 1.0E-05 0 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 AOD406 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 12000 5 VDS=15V ID=20A 10000 Capacitance (pF) VGS (Volts) 4 3 2 8000 6000 4000 Coss 1 2000 0 Crss 0 0 10 20 30 40 50 60 70 80 90 0 Qg (nC) Figure 7: Gate-Charge Characteristics 1000 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 100 RDS(ON) limited 80 100µs 10ms 1ms 0.1s 10 1s 20 1 0 0.01 10 100 VDS (Volts) ZθJA Normalized Transient Thermal Resistance 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=50°C/W 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 40 DC 0.1 0.1 60 10s TJ(Max)=150°C TA=25°C 1 TJ(Max)=150°C TA=25°C 10µs Power (W) 100 ID (Amps) Ciss In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Ton Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. 100 1000 AOD406 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 TA=25°C 100 Power Dissipation (W) ID(A), Peak Avalanche Current 120 80 60 tA = 40 L⋅ ID BV − V DD 20 0 0.00001 0.001 0.01 60 40 20 80 60 40 20 0 25 50 75 100 125 150 TCASE (°C) Figure 14: Current De-rating (Note B) Alpha & Omega Semiconductor, Ltd. 0 25 50 75 100 125 150 TCASE (°C) Figure 13: Power De-rating (Note B) 100 Current rating ID(A) 80 0 0.0001 Time in avalanche, t A (s) Figure 12: Single Pulse Avalanche capability 0 100 175 175