AOSMD AOD407L P-channel enhancement mode field effect transistor Datasheet

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AOD407
P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOD407 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and low
gate resistance. With the excellent thermal resistance
of the DPAK package, this device is well suited for
high current load applications.
VDS (V) = -60V
ID = -12A (VGS = -10V)
RDS(ON) < 115mΩ (VGS = -10V)
RDS(ON) < 150mΩ (VGS = -4.5V)
100% UIS tested
100% RG tested
-RoHS Compliant
-Halogen Free*
TO252
DPAK
Top View
Bottom View
D
D
D
S
S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
Continuous Drain
Current G
G
G
TC=25°C
Maximum
-60
Units
V
±20
V
-12
A
ID
IDM
-10
Avalanche Current C
IAR
-12
A
Repetitive avalanche energy L=0.1mH C
EAR
23
mJ
Pulsed Drain Current
C
TC=100°C
TC=25°C
Power Dissipation B
TC=100°C
Power Dissipation A
TA=70°C
50
PD
TA=25°C
2.5
-55 to 175
Symbol
Alpha & Omega Semiconductor, Ltd.
W
1.6
TJ, TSTG
t ≤ 10s
Steady-State
Steady-State
W
25
PDSM
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
A
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient A
B
Maximum Junction-to-Case
-30
RθJA
RθJC
Typ
16.7
40
2.5
°C
Max
25
50
3
Units
°C/W
°C/W
°C/W
AOD407
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Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=-250µA, VGS=0V
-60
VDS=-48V, VGS=0V
Gate-Body leakage current
VDS=0V, VGS=±20V
Gate Threshold Voltage
VDS=VGS ID=-250µA
-1.5
ID(ON)
On state drain current
VGS=-10V, VDS=-5V
-30
RDS(ON)
Static Drain-Source On-Resistance
VGS=-4.5V, ID=-8A
Forward Transconductance
VSD
Diode Forward Voltage
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
VDS=-5V, ID=-12A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge (10V)
Qg(4.5V) Total Gate Charge (4.5V)
-2.1
VGS=0V, VDS=0V, f=1MHz
VGS=-10V, VDS=-30V, ID=-12A
-3
µA
nA
V
A
115
150
114
mΩ
150
mΩ
-1
V
-12
A
1185
pF
12.8
-0.76
987
VGS=0V, VDS=-30V, f=1MHz
Units
V
91
TJ=125°C
gFS
Crss
-1
±100
VGS=-10V, ID=-12A
Output Capacitance
-0.003
-5
IGSS
Coss
Max
TJ=55°C
VGS(th)
IS
Typ
S
114
pF
46
pF
7
10
Ω
15.8
20
nC
7.4
9
nC
Qgs
Gate Source Charge
3
nC
Qgd
Gate Drain Charge
3.5
nC
tD(on)
Turn-On DelayTime
9
ns
10
ns
25
ns
11
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
Qrr
Body Diode Reverse Recovery Charge IF=-12A, dI/dt=100A/µs
VGS=-10V, VDS=-30V, RL=2.5Ω,
RGEN=3Ω
IF=-12A, dI/dt=100A/µs
27.5
35
30
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
Power dissipation P DSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of T J(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
*This device is guaranteed green after data code 8X11 (Sep 1 ST 2008).
Rev 7 : May 2010
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
AOD407
万和兴电子有限公司 www.whxpcb.com
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
10
-10V
25
-6V
-7V
VDS=-5V
8
-5V
6
-4.5V
15
-ID(A)
-ID (A)
20
VGS=-4V
125°C
4
10
25°C
-3.5V
5
2
-3V
0
0
0
1
2
3
4
0
5
1
3
4
5
-VGS(Volts)
Figure 2: Transfer Characteristics
-VDS (Volts)
Fig 1: On-Region Characteristics
220
2
180
Normalized On-Resistance
200
RDS(ON) (mΩ)
2
VGS=-4.5V
160
140
VGS=-10V
120
100
VGS=-10V
ID=-12A
1.8
1.6
VGS=-4.5V
ID=-8A
1.4
1.2
1
0.8
80
0
5
10
15
20
0
25
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
1.0E+01
300
ID=-12A
1.0E+00
250
1.0E-01
200
-IS (A)
RDS(ON) (mΩ)
125°C
150
25°C
125°C
1.0E-02
1.0E-03
25°C
1.0E-04
1.0E-05
100
1.0E-06
50
0.0
2
4
6
8
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.2
0.4
0.6
0.8
1.0
-VSD (Volts)
Figure 6: Body-Diode Characteristics
1.2
AOD407
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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1200
10
Ciss
VDS=-30V
ID=-12A
Capacitance (pF)
-VGS (Volts)
8
1000
6
4
800
600
400
Coss
2
Crss
200
0
0
0
4
8
12
-Qg (nC)
Figure 7: Gate-Charge Characteristics
0
16
100.0
5
10
15
20
25
-VDS (Volts)
Figure 8: Capacitance Characteristics
30
200
TJ(Max)=175°C, T A=25°C
RDS(ON)
limited
10.0
160
100µs
1ms
Power (W)
-ID (Amps)
10µs
10ms
1.0
TJ(Max)=175°C
TC=25°C
120
80
DC
40
0.1
0.1
1
10
100
-VDS (Volts)
ZθJC Normalized Transient
Thermal Resistance
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=3°C/W
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
0
0.0001
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
T
1
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
10
100
AOD407
万和兴电子有限公司 www.whxpcb.com
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
tA =
12
L ⋅ ID
BV − V DD
Power Dissipation (W)
-ID(A), Peak Avalanche Current
14
10
8
TA=25°C
50
40
30
20
10
0
6
0.00001
0.0001
0
0.001
25
60
12
50
10
75
100
125
150
175
TA=25°C
40
Power (W)
Current rating -ID(A)
14
8
6
4
30
20
10
2
0
0
25
75
100
125
150
TCASE (°C)
Figure 14: Current De-rating (Note B)
10
ZθJA Normalized Transient
Thermal Resistance
50
TCASE (°C)
Figure 13: Power De-rating (Note B)
Time in avalanche, t A (s)
Figure 12: Single Pulse Avalanche capability
1
50
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=50°C/W
0
0.001
175
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
0.001
0.00001
Single Pulse
0.0001
0.001
Ton
0.01
0.1
1
T
10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
100
1000
AOD407
万和兴电子有限公司 www.whxpcb.com
G ate Charge Test Circuit & W aveform
Vgs
Qg
-10V
+
VD C
-
Qgs
Vds
Qgd
+
VD C
DUT
Vgs
Ig
C harge
Resistive Switching Test Circuit & W aveform s
RL
Vds
t off
t on
td(on)
Vgs
VDC
-
DUT
Vgs
Rg
t d(off)
tr
tf
90%
Vdd
+
Vgs
10%
Vds
Unclam ped Inductive Switching (U IS) Test Circuit & W aveform s
2
L
E AR = 1/2 LIAR
Vds
Vds
Id
VD C
-
Vgs
Vgs
+
Rg
BVD SS
Vdd
Id
I AR
D UT
Vgs
Vgs
Diode Recovery Test Circuit & W aveform s
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
L
Vgs
Ig
Alpha & Omega Semiconductor, Ltd.
-Isd
+ Vdd
VD C
-
-I F
t rr
dI/dt
-I RM
-Vds
Vdd
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