AOSMD AOD413 P-channel enhancement mode field effect transistor Datasheet

AOD413
P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOD413 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and low
gate resistance. With the excellent thermal resistance
of the DPAK package, this device is well suited for
high current load applications. Standard Product
AOD413 is Pb-free (meets ROHS & Sony 259
specifications). AOD413L is a Green Product
ordering option. AOD413 and AOD413L are
electrically identical.
VDS (V) = -40V
ID = -12A (VGS = -10V)
RDS(ON) < 45mΩ (VGS = -10V)
RDS(ON) < 69mΩ (VGS = -4.5V)
TO-252
D-PAK
D
Top View
Drain Connected to
Tab
G
S
G
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
Continuous Drain
Current B,G
TA=25°C
G
Pulsed Drain Current
Avalanche Current C
C
TC=25°C
Power Dissipation B
Junction and Storage Temperature Range
Alpha & Omega Semiconductor, Ltd.
V
A
-12
IAR
-12
A
EAR
30
mJ
-30
50
2.5
W
1.6
TJ, TSTG
°C
-55 to 175
Symbol
t ≤ 10s
Steady-State
Steady-State
W
25
PDSM
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Case C
±20
ID
IDM
PD
TC=100°C
TA=25°C
Power Dissipation A
Units
V
-12
TA=100°C G
Repetitive avalanche energy L=0.1mH
Maximum
-40
RθJA
RθJL
Typ
16.7
40
2.5
Max
25
50
3
Units
°C/W
°C/W
°C/W
AOD413
Electrical Characteristics (T J=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=-10mA, V GS=0V
VDS=-32V, VGS=0V
-40
IDSS
Zero Gate Voltage Drain Current
IGSS
VGS(th)
ID(ON)
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
RDS(ON)
Static Drain-Source On-Resistance
gFS
VSD
IS
VGS=-4.5V, ID=-8A
VDS=-5V, ID=-12A
Forward Transconductance
Diode Forward Voltage
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge (10V)
Qg(4.5V) Total Gate Charge (4.5V)
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
Qrr
Body Diode Reverse Recovery Charge
Typ
Max
-1.9
-1
-5
±100
-3
V
TJ=55°C
VDS=0V, VGS=±20V
VDS=VGS ID=-250µA
VGS=-10V, VDS=-5V
VGS=-10V, ID=-12A
-1
-30
TJ=125°C
VGS=0V, VDS=-20V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=-10V, VDS=-20V, ID=-12A
VGS=-10V, VDS=-20V, RL=1.7Ω,
RGEN=3Ω
IF=-12A, dI/dt=100A/µs
IF=-12A, dI/dt=100A/µs
Units
36
56
51
16
-0.75
657
143
63
6.5
µA
nA
V
A
45
70
69
mΩ
-1
-12
S
V
A
850
185
90
14.1
7
2.2
4.1
8
12.2
24
12.5
23.2
18.2
mΩ
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of R qJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power
dissipation PDSM is based on R qJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's
specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R qJA is the sum of the thermal impedence from junction to case R qJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve
provides a single pulse rating.
Rev 3: Jan 2006
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AOD413
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
30
-5V
-10V
VDS=-5V
-4.5V
25
-6V
ID=-10mA, V GS=0V
20
-4V
15
-ID(A)
-ID (A)
20
15
-3.5V
10
10
125°C
VGS=-3V
5
5
0
25°C
0
0
1
2
3
4
5
1
1.5
2
2.5
3
70
4
4.5
5
1.80
VGS=-10V
ID=-12A
Normalized On-Resistance
65
60
RDS(ON) (mΩ)
3.5
-VGS(Volts)
Figure 2: Transfer Characteristics
-VDS (Volts)
Fig 1: On-Region Characteristics
VGS=-4.5V
55
50
45
VGS=-10V
40
35
30
0
5
10
15
20
1.60
1.40
VGS=-4.5V
ID=-8A
1.20
1.00
0.80
0
-ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1.0E+01
150
135
1.0E+00
ID=-12A
120
125°C
105
-IS (A)
RDS(ON) (mΩ)
1.0E-01
90
125°C
1.0E-02
75
1.0E-03
60
1.0E-04
45
25°C
25°C
1.0E-05
30
3
4
5
6
7
8
9
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
10
1.0E-06
0.0
0.2
0.4
0.6
0.8
-VSD (Volts)
Figure 6: Body-Diode Characteristics
1.0
AOD413
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
10
VDS=-15V
ID=-12A
ID=-10mA, V GS=0V
Ciss
750
Capacitance (pF)
-VGS (Volts)
8
6
4
500
Coss
Crss
250
2
0
0
0
3
6
9
12
0
15
10
100.0
10µs
RDS(ON)
limited
40
T J(Max)=175°C
T A=25°C
160
1ms
Power (W)
-ID (Amps)
30
200
T J(Max)=175°C, T A=25°C
10.0
20
-VDS (Volts)
Figure 8: Capacitance Characteristics
-Qg (nC)
Figure 7: Gate-Charge Characteristics
100µs
10ms
1.0
DC
120
80
40
0.1
0.1
1
10
0
0.0001
100
-VDS (Volts)
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
ZθJA Normalized Transient
Thermal Resistance
10
D=T on/T
T J,PK =T A+PDM.ZθJC.RθJC
RθJC=3°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
T on
Single Pulse
0.01
0.00001
0.0001
0.001
T
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
100
1000
AOD413
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
L⋅ ID
=
tIDA=-10mA,
V =0V
BV − VGS
DD
12
10
8
T A=25°C
50
Power Dissipation (W)
-ID(A), Peak Avalanche Current
14
40
30
20
10
0
6
0.00001
0.0001
0
0.001
25
14
60
12
50
10
100
125
150
175
T A=25°C
40
Power (W)
Current rating -ID(A)
75
TCASE (°C)
Figure 13: Power De-rating (Note B)
Time in avalanche, t A (s)
Figure 12: Single Pulse Avalanche capability
8
6
30
20
4
10
2
0
0
25
50
75
100
125
150
0
0.001
175
TCASE (°C)
Figure 14: Current De-rating (Note B)
10
ZθJA Normalized Transient
Thermal Resistance
50
1
D=T on/T
T J,PK =T A+PDM.ZθJA.RθJA
RθJA=50°C/W
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Single Pulse
T on
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
100
1000
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