AOD436 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD436 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion. Standard Product AOD436 is Pb-free (meets ROHS & Sony 259 specifications). AOD436L is a Green Product ordering option. AOD436 and AOD436L are electrically identical. VDS (V) = 30V ID = 60A (VGS = 10V) RDS(ON) < 7.5mΩ (VGS = 10V) RDS(ON) < 13mΩ (VGS = 4.5V) TO-252 D-PAK D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,G TC=25°C G Pulsed Drain Current Avalanche Current C C TC=25°C Power Dissipation B A V Junction and Storage Temperature Range 130 IAR 30 A EAR 113 mJ 50 W 25 2.5 W 1.6 TJ, TSTG -55 to 175 Symbol t ≤ 10s Steady-State Steady-State Alpha & Omega Semiconductor, Ltd. A 43 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient C Maximum Junction-to-Case ±20 ID IDM PD TC=100°C TA=25°C Power Dissipation Units V 60 TC=100°C B Repetitive avalanche energy L=0.1mH Maximum 30 RθJA RθJC Typ 14.2 39 2 °C Max 20 50 3 Units °C/W °C/W °C/W AOD436 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V 30 5 Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=10V, VDS=5V 85 VGS=10V, ID=20A TJ=125°C VGS=4.5V, ID=20A gFS Forward Transconductance VSD IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current IS VDS=5V, ID=20A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Units 1 TJ=55°C Static Drain-Source On-Resistance Max V VDS=24V, VGS=0V IGSS RDS(ON) Typ 100 nA 1.8 3 V 5.4 7.5 8.1 9.7 9.8 13 A 88 0.71 1520 VGS=0V, VDS=15V, f=100kHz VGS=4.5V, VDS=15V, ID=20A mΩ mΩ S 1 V 85 A 1825 pF 306 pF 214 VGS=0V, VDS=0V, f=1MHz µA pF 0.47 0.7 Ω 31.9 39 nC 16.2 20 nC 5 nC Gate Drain Charge 9.6 nC Turn-On DelayTime 7 ns VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω 11.6 ns 24.2 ns IF=20A, dI/dt=100A/µs 23.8 Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs 15.7 7.7 ns 30 ns nC 2 A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation PDSM is based on steady-state R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB or heatsink allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. 2 F. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by the package current capability. Rev 4 : July 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AOD436 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 60 10V 4.0V 50 20 40 3.5V 125°C ID(A) ID (A) VDS=5V 10 30 20 25°C VGS=3V 10 0 0 1 2 3 4 0 5 1.5 2 VDS (Volts) Fig 1: On-Region Characteristics 3 3.5 4 4.5 VGS(Volts) Figure 2: Transfer Characteristics 1.8 Normalized On-Resistance 12 11 10 RDS(ON) (mΩ) 2.5 9 VGS=4.5V 8 7 VGS=10V 6 5 4 ID=20A 1.6 VGS=10V 1.4 1.2 VGS=4.5V 1 0.8 0 5 10 15 20 25 30 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+02 16 1.0E+01 125°C 1.0E+00 12 125°C 8 IS (A) RDS(ON) (mΩ) ID=20A 1.0E-01 25°C 1.0E-02 1.0E-03 1.0E-04 25°C 4 2.00E+00 1.0E-05 4.00E+00 6.00E+00 8.00E+00 1.00E+01 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AOD436 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 2000 Capacitance (pF) 8 VGS (Volts) 2400 VDS=15V ID=20A 6 4 Ciss 1600 1200 Coss 800 2 400 Crss 0 0 0 5 10 15 20 25 30 35 0 Qg (nC) Figure 7: Gate-Charge Characteristics 10µs 1ms 10ms 1s 30 60 40 10s TJ(Max)=150°C TA=25°C 20 DC 0 0.001 0.1 1 10 100 VDS (Volts) D=Ton/T TJ,PK =TA+PDM.ZθJA.RθJA RθJA=50°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) ZθJA Normalized Transient Thermal Resistance 25 TJ(Max)=150°C TA=25°C 80 0.1s 10 1 20 100µs Power (W) ID (Amps) 100 10 15 100 RDS(ON) limited 0.1 10 VDS (Volts) Figure 8: Capacitance Characteristics 1000 1 5 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Ton Single Pulse T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. 100 1000 AOD436 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 TA=25°C tA = 40 Power Dissipation (W) ID(A), Peak Avalanche Current 60 L ⋅ ID BV − V DD 20 80 60 40 20 0 0 0.00001 0.0001 0.001 0.01 Time in avalanche, t A (s) Figure 12: Single Pulse Avalanche capability 80 60 40 20 0 0 25 50 75 100 125 150 T CASE (°C) Figure 14: Current De-rating (Note B) Alpha & Omega Semiconductor, Ltd. 0 25 50 75 100 125 150 T CASE (°C) Figure 13: Power De-rating (Note B) 100 Current rating ID(A) 100 175 175