AOD450 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD450 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in inverter, load switching and general purpose applications. Standard product AOD450 is Pb-free (meets ROHS & Sony 259 specifications). AOD450L is a Green Product ordering option. AOD450 and AOD450L are electrically identical. VDS (V) = 200V ID = 3.8A RDS(ON) <0.7Ω (VGS = 10V) 193 18 TO-252 D-PAK D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TC=25°C Continuous Drain Current C C Repetitive avalanche energy L=1.35mH C TC=25°C Power Dissipation B TC=100°C Power Dissipation A TA=70°C V A 2.7 IAR 3 A EAR 6 mJ 10 25 2.1 W 1.3 TJ, TSTG °C -55 to 175 Symbol t ≤ 10s Steady-State Steady-State W 12.5 PDSM Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. ±30 ID IDM PD TA=25°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case B Units V 3.8 TC=100°C Pulsed Drain Current Avalanche Current Maximum 200 RθJA RθJC Typ 17.1 50 4 Max 30 60 6 Units °C/W °C/W °C/W AOD450 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=10mA, VGS=0V 200 TJ=55°C 5 Gate-Body leakage current VDS=0V, VGS=±30V Gate Threshold Voltage VDS=VGS, ID=250µA 3 ID(ON) On state drain current VGS=10V, VDS=15V 10 VGS=10V, ID=3.8A TJ=125°C gFS Forward Transconductance VSD IS=1A, VGS=0V Diode Forward Voltage G Maximum Body-Diode Continuous Current IS VDS=15V, ID=3.8A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Units 1 VGS(th) Static Drain-Source On-Resistance Max V VDS=160V, VGS=0V IGSS RDS(ON) Typ VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=25V, ID=3.8A µA 100 nA 5 6 V 0.55 0.70 1.1 1.32 A 8.7 0.8 Ω S 1 V 6 A 215 pF 32 pF 7.2 pF 5.5 Ω 3.82 nC 0.92 nC 1.42 nC Qgd Gate Drain Charge 1.47 nC tD(on) Turn-On DelayTime 6.3 ns tr Turn-On Rise Time 3.3 ns tD(off) Turn-Off DelayTime 10.5 ns tf Turn-Off Fall Time 2.8 ns ns nC VGS=10V, VDS=25V, RL=6.5Ω, RGEN=3Ω trr Body Diode Reverse Recovery Time IF=3.8A, dI/dt=100A/µs 59 Qrr Body Diode Reverse Recovery Charge IF=3.8A, dI/dt=100A/µs 142 A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation P DSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any a given application depends on the user's specific board design, and the maximum temperature fo 175°C may be used if the PCB allows it. B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175°C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. Rev0: Feb 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AOD450 TYPICAL ELECTRICAL CHARACTERISTICS 14 1.0E+02 12 10V 1.0E+01 8V 1.0E+00 VDS=15V 8 ID(A) ID(A) 10 6 4 1.0E-01 494 692 1.0E-02 2 VGS=6V 0 5 10 VDS(Volts) 15 20 2 4 6 800 Normalized On-Resistance 700 VGS=10V 500 400 300 200 0 1 2 3 4 5 10 193 18 2.4 600 8 VGS(Volts) Figure 2: Transfer Characteristics Figure 1:On-Region Characteristics RDS(ON) (mΩ) 593 830 1.0E-03 0 6 1400 2.2 2 VGS=10V, 3.8A 1.8 1.6 1.4 1.2 1 0.8 7 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 59 100 142 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 ID=3.8A 1200 1.0E+00 125°C 125°C 1.0E-01 1000 IS (A) RDS(ON) (mΩ) 4.6325°C 125°C 7V 1.0E-02 800 25°C 600 1.0E-03 25°C 1.0E-04 400 1.0E-05 200 6 8 10 12 14 16 18 20 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AOD450 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 300 10 VDS=10V ID=3.8A 250 Capacitance (pF) VGS (Volts) 8 6 4 2 Ciss 200 150 4.63 100 Coss 50 494 692 Crss 593 830 0 0 0 1 2 3 0 4 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 193 18 100.00 200 TJ(Max)=175°C, TC=25°C 160 10.00 TJ(max)=175°C TC=25°C RDS(ON) limited 1.00 Power (W) ID (Amps) 10µs 100µ 120 80 1ms 0.10 DC 40 0.01 0.1 1 10 VDS (Volts) 100 1000 ZθJC Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=6°C/W 0.001 0.01 59 0.1 142 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 0 0.0001 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 0.01 0.00001 Ton T Single Pulse 0.0001 0.001 0.01 0.1 1 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. 10 100 AOD450 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 ID(A), Peak Avalanche Current 5 Power Dissipation (W) 4 3 2 TA=25°C 1 25 20 15 4.63 10 494 692 5 0 0 0.000001 0.00001 0.0001 0 0.001 25 5 50 4 40 Power (W) Current rating ID(A) Time in avalanche, t A (s) Figure 12: Single Pulse Avalanche capability 3 2 50 75 100 125 150 TCASE (°C) Figure 13: Power De-rating (Note B) 175 193 18 TA=25°C 30 20 10 1 0 0.001 0 0 25 50 75 100 125 150 175 TCASE (°C) Figure 14: Current De-rating (Note B) 10 ZθJA Normalized Transient Thermal Resistance 593 830 59 0.01 1 142 0.1 10 100 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 0.01 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=60°C/W Single Pulse PD Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Alpha & Omega Semiconductor, Ltd. 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) 100 1000